JP4737173B2 - 回路基板 - Google Patents
回路基板 Download PDFInfo
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- JP4737173B2 JP4737173B2 JP2007270233A JP2007270233A JP4737173B2 JP 4737173 B2 JP4737173 B2 JP 4737173B2 JP 2007270233 A JP2007270233 A JP 2007270233A JP 2007270233 A JP2007270233 A JP 2007270233A JP 4737173 B2 JP4737173 B2 JP 4737173B2
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- 238000007747 plating Methods 0.000 claims description 88
- 239000010931 gold Substances 0.000 description 135
- 229910000679 solder Inorganic materials 0.000 description 19
- 239000010949 copper Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 238000005476 soldering Methods 0.000 description 9
- 239000003638 chemical reducing agent Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
なお、上記実施形態では、Auめっき膜20aの下地はCuめっき膜20bであったが、可能ならば、当該下地は、それ以外のものでもよい。
20…接続用ランドとしてのAuワイヤ用ランド、
20a…Auめっき膜、20b…Cuめっき膜、
21…接続用ランドであり他部品用ランドとしてのAlワイヤ用ランド、
22…接続用ランドであり他部品用ランドとしてのはんだ付け用ランド、
40…Auワイヤ、41…Alワイヤ、50…はんだ。
Claims (4)
- 一面(11)に複数個の接続用ランド(20、21、22)を備え、
前記複数個の接続用ランド(20〜22)は、AuよりなるボンディングワイヤであるAuワイヤ(40)が接続されるAuワイヤ用ランド(20)と、前記Auワイヤ(20)以外の他の部品(41、50)が接続され且つ前記Auワイヤ用ランド(20)よりもランド面積が大きい他部品用ランド(21、22)とよりなり、
前記複数個の接続用ランド(20〜22)は、接続面の最表層がAuめっき膜(20a)よりなるものである回路基板において、
前記複数個の接続用ランド(20〜22)は、ランド面積が小さくなるに従って前記Auめっき膜(20a)が厚くなっているものであることを特徴とする回路基板。 - 前記複数個の接続用ランド(20〜22)において、前記Auめっき膜(20a)の下地はCuめっき膜(20b)であることを特徴とする請求項1に記載の回路基板。
- 前記ランド面積が1mm2小さくなると、前記Auめっき膜(20a)の膜厚が0.002μm〜0.005μmの範囲で厚くなっていることを特徴とする請求項1または2に記載の回路基板。
- 前記Auワイヤ用ランド(20)の前記Auめっき膜(20a)は、前記他部品用ランド(21、22)の前記Auめっき膜(20a)よりも厚くなっていることを特徴とする請求項1ないし3のいずれか1つに記載の回路基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007270233A JP4737173B2 (ja) | 2007-10-17 | 2007-10-17 | 回路基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007270233A JP4737173B2 (ja) | 2007-10-17 | 2007-10-17 | 回路基板 |
Publications (2)
Publication Number | Publication Date |
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JP2009099790A JP2009099790A (ja) | 2009-05-07 |
JP4737173B2 true JP4737173B2 (ja) | 2011-07-27 |
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JP2007270233A Active JP4737173B2 (ja) | 2007-10-17 | 2007-10-17 | 回路基板 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6551601B2 (ja) * | 2016-03-31 | 2019-07-31 | 株式会社村田製作所 | 配線基板およびこれを備えるプローブカード |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07254600A (ja) * | 1994-03-15 | 1995-10-03 | Toshiba Corp | 半導体装置の設計方法 |
JP3675407B2 (ja) * | 2001-06-06 | 2005-07-27 | 株式会社デンソー | 電子装置 |
JP2004207381A (ja) * | 2002-12-24 | 2004-07-22 | Shinko Electric Ind Co Ltd | 配線基板及びその製造方法並びに半導体装置 |
JP2005277124A (ja) * | 2004-03-25 | 2005-10-06 | Sanyo Electric Co Ltd | 回路基板及びそれを備える表示装置 |
JP4696532B2 (ja) * | 2004-05-20 | 2011-06-08 | 株式会社デンソー | パワー複合集積型半導体装置およびその製造方法 |
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