JP4730994B2 - 電気光学装置及びその作製方法並びに電子装置 - Google Patents

電気光学装置及びその作製方法並びに電子装置 Download PDF

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JP4730994B2
JP4730994B2 JP2000166777A JP2000166777A JP4730994B2 JP 4730994 B2 JP4730994 B2 JP 4730994B2 JP 2000166777 A JP2000166777 A JP 2000166777A JP 2000166777 A JP2000166777 A JP 2000166777A JP 4730994 B2 JP4730994 B2 JP 4730994B2
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region
film
insulating film
tft
ldd
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JP2001052873A (ja
JP2001052873A5 (enExample
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舜平 山崎
潤 小山
一宇 山本
利光 小沼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2000166777A 1999-06-04 2000-06-02 電気光学装置及びその作製方法並びに電子装置 Expired - Fee Related JP4730994B2 (ja)

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JP2000166777A JP4730994B2 (ja) 1999-06-04 2000-06-02 電気光学装置及びその作製方法並びに電子装置

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JP1999158809 1999-06-04
JP15880999 1999-06-04
JP11-158809 1999-06-04
JP2000166777A JP4730994B2 (ja) 1999-06-04 2000-06-02 電気光学装置及びその作製方法並びに電子装置

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JP2001052873A5 JP2001052873A5 (enExample) 2007-07-12
JP4730994B2 true JP4730994B2 (ja) 2011-07-20

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Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4683766B2 (ja) * 2000-05-22 2011-05-18 株式会社半導体エネルギー研究所 アクティブマトリクス型発光装置
JP4809544B2 (ja) * 2001-05-22 2011-11-09 株式会社半導体エネルギー研究所 発光装置
TWI264244B (en) * 2001-06-18 2006-10-11 Semiconductor Energy Lab Light emitting device and method of fabricating the same
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003109773A (ja) 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP4613007B2 (ja) * 2001-08-09 2011-01-12 出光興産株式会社 有機エレクトロルミネッセンス表示装置
WO2003019696A2 (en) * 2001-08-25 2003-03-06 Cambridge Display Technology Limited Electroluminescent device
US6852997B2 (en) 2001-10-30 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4019690B2 (ja) 2001-11-02 2007-12-12 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP4493905B2 (ja) * 2001-11-09 2010-06-30 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4451054B2 (ja) * 2001-11-09 2010-04-14 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US7042024B2 (en) 2001-11-09 2006-05-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
JP4515022B2 (ja) * 2001-11-16 2010-07-28 株式会社半導体エネルギー研究所 発光装置
US6822264B2 (en) 2001-11-16 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP3627707B2 (ja) * 2002-01-23 2005-03-09 富士電機ホールディングス株式会社 色変換フィルタ基板、それを用いた有機多色ｅｌディスプレイパネルおよびそれらの製造方法
JP2003308030A (ja) * 2002-02-18 2003-10-31 Sanyo Electric Co Ltd 表示装置
JP4123411B2 (ja) * 2002-03-26 2008-07-23 株式会社半導体エネルギー研究所 発光装置
JP4391126B2 (ja) * 2002-05-15 2009-12-24 株式会社半導体エネルギー研究所 発光装置の作製方法
TWI263339B (en) 2002-05-15 2006-10-01 Semiconductor Energy Lab Light emitting device and method for manufacturing the same
JP2004134397A (ja) * 2002-09-20 2004-04-30 Semiconductor Energy Lab Co Ltd 発光装置及び発光装置の作製方法
JP4798179B2 (ja) * 2003-05-19 2011-10-19 セイコーエプソン株式会社 電気光学装置および電子機器
JP4239873B2 (ja) * 2003-05-19 2009-03-18 セイコーエプソン株式会社 電気光学装置および電子機器
US7768014B2 (en) 2005-01-31 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method thereof
JP4661557B2 (ja) 2005-11-30 2011-03-30 セイコーエプソン株式会社 発光装置および電子機器
JP5114841B2 (ja) * 2005-11-30 2013-01-09 セイコーエプソン株式会社 発光装置および電子機器
JP4939045B2 (ja) 2005-11-30 2012-05-23 セイコーエプソン株式会社 発光装置および電子機器
KR101326135B1 (ko) 2006-11-27 2013-11-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
WO2009054159A1 (ja) * 2007-10-23 2009-04-30 Sharp Kabushiki Kaisha 表示装置及び表示装置の製造方法
JP5194892B2 (ja) * 2008-03-06 2013-05-08 セイコーエプソン株式会社 電気光学装置及び電子機器
KR102112799B1 (ko) * 2008-07-10 2020-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 전자기기
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR102775255B1 (ko) 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101944239B1 (ko) * 2009-10-09 2019-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 표시 장치 및 이를 포함한 전자 기기
KR20120083341A (ko) 2009-10-09 2012-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함하는 전자 기기
KR101339000B1 (ko) 2011-12-14 2013-12-09 엘지디스플레이 주식회사 유기전계발광 표시소자 및 그 제조방법
CN103178084B (zh) * 2011-12-23 2015-10-14 乐金显示有限公司 有机发光显示装置
JP5728599B2 (ja) * 2014-03-14 2015-06-03 株式会社半導体エネルギー研究所 発光装置
JP6034897B2 (ja) * 2015-02-27 2016-11-30 株式会社半導体エネルギー研究所 発光装置
CN107039351B (zh) * 2017-04-05 2019-10-11 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536716A (ja) * 1991-07-29 1993-02-12 Nec Corp 半導体装置およびその製造方法
JP3180978B2 (ja) * 1992-01-21 2001-07-03 京セラ株式会社 光磁気記録素子
JP3343160B2 (ja) * 1992-09-25 2002-11-11 ソニー株式会社 液晶表示装置
JPH0945930A (ja) * 1995-07-28 1997-02-14 Sony Corp 薄膜トランジスタ及びその製造方法
JPH10172762A (ja) * 1996-12-11 1998-06-26 Sanyo Electric Co Ltd エレクトロルミネッセンス素子を用いた表示装置の製造方法及び表示装置
JPH10268360A (ja) * 1997-03-26 1998-10-09 Semiconductor Energy Lab Co Ltd 表示装置
JP3830238B2 (ja) * 1997-08-29 2006-10-04 セイコーエプソン株式会社 アクティブマトリクス型装置
JPH11143379A (ja) * 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法

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