JP4721289B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus that performs predetermined processing on a substrate while conveying the substrate to be processed.

In the photolithography process in the manufacture of semiconductor devices and flat panel displays, for example, a resist coating process for coating a resist solution, which is a coating liquid, on a substrate to be processed such as a semiconductor wafer or an LCD substrate, after the coating process Pre-baking process (PAB) for heating the wafer, exposure process for exposing the resist film to a predetermined pattern, post-exposure baking process (PEB) for promoting chemical reaction in the resist film after exposure, exposed resist film A development process for developing the film is sequentially performed, and a predetermined resist pattern is formed on the substrate.
Further, after the photolithography process, an etching process for removing a base film on the substrate, for example, an oxide film, is performed using the resist pattern as a mask to form a predetermined pattern.

By the way, in such a photolithography process, a coating process unit 200 having a configuration shown in FIG. 6 is conventionally used as disclosed in, for example, Patent Document 1.
The coating process unit 200 includes a carry-in unit 201 composed of a transport roller, a resist coating unit (CT) 202 that coats the substrate G with a resist solution, and a reduced-pressure drying unit (a drying process for drying the resist film by reducing the pressure in the chamber). VD) 203, an edge remover unit (ER) 204 for removing excess resist on the peripheral edge of the substrate, and a carry-out unit 205 made up of a transfer roller or the like are arranged in a line along the transfer line on the support table 206. ing.

Further, on the support base 206, a pair of guide rails 207 laid in parallel on both sides of the support base 206, and one or more sets of transport arms 208 that move along the guide rails 207 are provided. By 208, the board | substrate G is comprised so that it may be carried in / out between each unit.
JP 2005-11936 A

In the conventional apparatus as disclosed in Patent Document 1, a transfer robot such as the transfer arm 208 is used for loading and unloading the substrate G between units as described above.
However, loading and unloading the substrate by the transfer robot requires time, so that there is a problem that efficiency is poor and throughput is lowered.
Further, since a plurality of transfer robots and processing units are required for improving the throughput, there is a problem that the cost of the apparatus is increased.

  The present invention has been made under the circumstances as described above, and in a substrate processing apparatus that continuously performs a plurality of processes on a substrate to be processed, it is possible to easily and quickly transport a substrate between units performing each process. An object of the present invention is to provide a substrate processing apparatus capable of reducing the manufacturing cost and improving the throughput.

  In order to solve the above-described problems, a substrate processing apparatus according to the present invention is arranged along a substrate transport direction in a substrate processing apparatus that performs a predetermined process on a substrate while transporting a substrate to be processed, and below the substrate. A stage that floats the substrate by forming a predetermined gas flow on the substrate, and is stretched parallel to the upper surface of the stage so as to cover the stage, and is longer than the length of the stage in the substrate transport direction. And a roller driving unit that winds the sheet from one end side thereof and feeds the sheet in the substrate transport direction, and the sheet has an inner peripheral edge on the lower surface side that adheres to the upper surface peripheral edge of the substrate. A processing hole for holding the substrate is formed along the substrate conveyance direction by bonding the peripheral portions, and the substrate is held below the processing hole formed in the sheet to drive the roller driving unit. Is transported more to the substrate transport direction, to the processing hole in the upper surface of the sheet is characterized in that the target surface of the substrate held is exposed.

It is desirable that the substrate is bonded and held below the processing hole formed in the sheet in a state of being floated by a gas flow formed above the stage.
In the sheet, it is preferable that a plurality of the processing holes are formed along the substrate conveyance direction.
In addition, it is desirable to include a processing unit that performs a predetermined process on the processing surface exposed from the processing hole on the substrate transported in the substrate transport direction by driving the roller driving unit.
The holding sheet is preferably a long film sheet made of a resin material.

By comprising in this way, the process by a process means can be continuously performed with respect to the to-be-processed substrate hold | maintained and conveyed by a sheet | seat.
That is, the processing can be performed while being transported on the transport path without taking out the substrate from the sheet (transport path), and the transport of the substrate between the units is performed while the substrate is held on the sheet. In addition, since a plurality of processing holes are continuously formed in the conveyance direction in the sheet, the processing for the plurality of substrates is continuously performed by holding the substrates below the processing holes. be able to.
In addition, when a resist solution is applied to the surface to be processed exposed in the processing hole, the peripheral portion on the surface to be processed side of the substrate is masked by the sheet, so that excess resist solution may adhere after the resist is applied. In addition, the conventional edge remover unit becomes unnecessary.
Therefore, it is not necessary to carry in / out the substrate for each processing unit by the transfer robot as in the conventional case, and the number of processing units can be reduced, so that the processing efficiency for a plurality of substrates is improved, the cost is reduced and the throughput is improved. it can.

In a state where a predetermined gas flow is not formed above the stage and below the substrate, the substrate is preferably separated from the sheet by its own weight.
With this configuration, it is possible to easily carry out the substrate from the substrate processing apparatus according to the present invention.

In addition, a plurality of gas injection ports and a plurality of intake ports for sucking in gas injected from the gas injection ports are formed on the surface of the stage, and the substrate is formed by the gas injection ports and the intake ports. It is preferable that a predetermined gas flow is formed below the substrate and the substrate floats.
By comprising in this way, a board | substrate can be levitated on the said stage.

Further, it is desirable that a mark used for alignment of the substrate to be held is attached to the peripheral portion of the processing hole formed in the holding sheet.
If comprised in this way, it can align easily by hold | maintaining the notch part and orientation flat part of a board | substrate together.

  According to the present invention, in a substrate processing apparatus that continuously performs a plurality of processes on a substrate to be processed, the substrate can be transported between units performing each process easily and in a short time, thereby reducing the manufacturing cost and improving the throughput. Can be obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a coating and developing treatment system including a substrate processing apparatus according to the present invention. FIG. 2 is a flowchart showing a processing procedure for one substrate to be processed in the coating and developing processing system 1.
First, the coating and developing treatment system 1 will be briefly described along the flow of FIG. 2 using the plan view of FIG. The coating and developing treatment system 1 is installed in a clean room. For example, a semiconductor silicon wafer is used as a substrate to be processed (hereinafter referred to as a wafer W), and a photolithography process is performed in a semiconductor manufacturing process.

First, in the cassette station (C / S) 2, the transfer mechanism 3 uses the transfer arm 3 a to take out one wafer W from any one cassette C on the stage 4, and the taken wafer W is removed from the process station (P / S) 5 is carried in a posture on its back (with the substrate surface to be processed facing up) at the starting point of the flat flow conveying path 6 which is a carry-in portion on the process line A side (step S1 in FIG. 2).
In this way, the wafer W is transported toward the downstream side of the process line A in a flat flow on the transport path 6 in a supine posture. In the first-stage cleaning process unit 7, the wafer W is sequentially subjected to an ultraviolet cleaning process and a scrubbing cleaning process by an excimer UV irradiation unit (e-UV) 8 and a scrubber cleaning unit (SCR) 9 (steps S2 and S3).

  In the scrubber cleaning unit (SCR) 9, the wafer W moving on the flat flow path 6 is subjected to brushing cleaning and blow cleaning to remove particulate dirt from the substrate surface, and then a rinsing process is performed. Finally, the wafer W is dried using an air knife or the like. When a series of cleaning processes in the scrubber cleaning unit (SCR) 9 is finished, the wafer W flows as it is, passes down the transfer path 6 and passes through the first thermal processing unit 10.

In the first thermal processing unit 10, when the wafer W is loaded into the adhesion unit (AD) 11, first, it undergoes a dehydration baking process by heating to remove moisture.
The wafer W that has been subjected to the dehydration baking process in the adhesion unit 11 is subjected to an adhesion process using vapor HMDS, and the surface to be processed is hydrophobized (step S4). After the completion of this adhesion process, the wafer W is cooled to a predetermined substrate temperature by the cooling unit (COL) 12 (step S5). Thereafter, the wafer W is flown flat and transferred on the transfer path 6 and is transferred to the coating process unit 13.

In the coating process unit 13, while the wafer W is transported on the flat flow path 6, the resist coating unit (CT) 14 first applies the resist solution onto the wafer upper surface (surface to be processed) using, for example, a slit nozzle. Immediately after that, the drying unit (HD) 15 receives a drying process by a heater (preliminary drying process before pre-baking) (step S6).
In addition, since the substrate processing apparatus of this invention can be used suitably in the application | coating process part 13, the structure and effect are mentioned later in detail.

  Thereafter, the wafer W flows flatly, is transferred on the transfer path 6, and passes through the second thermal processing unit 16. In the second thermal processing unit 16, the wafer W is first pre-baked by the pre-bake unit (PREBAKE) 17 as a heat treatment after resist coating or a heat treatment before exposure (step S7). By this pre-baking, the solvent remaining in the resist film on the wafer W is removed by evaporation, and the adhesion of the resist film to the wafer W is also enhanced.

Next, the wafer W is cooled to a predetermined substrate temperature by the cooling unit (COL) 18 (step S8). Thereafter, the wafer W is picked up by the transfer device 20 of the interface station (I / F) 19 from the end point (unloading portion) of the flat flow transfer path 6.
In the interface station (I / F) 19, the wafer W is transferred from the extension / cooling stage (EXT / COL) 21 to the peripheral exposure device (EE) of the peripheral device 22, where the resist adhering to the peripheral portion of the wafer W is removed. After receiving exposure for removal during development, the image is sent to the adjacent exposure device 23 (step S9).
The exposure apparatus 23 exposes a predetermined circuit pattern to the resist on the wafer W. Then, when the substrate G that has undergone pattern exposure is returned from the exposure apparatus 23 to the interface station (I / F) 19, it is first carried into a titler (TITLER) of the peripheral device 22, where a predetermined portion on the substrate is predetermined. Is recorded (step S10).

Thereafter, the wafer W is returned to the extension / cooling stage (EXT / COL) 21. Transfer of the wafer W at the interface station (I / F) 19 and exchange of the wafer W with the exposure apparatus 23 are performed by transfer apparatuses 20 and 24. Finally, the wafer W is transferred from the transfer device 24 to the start point (loading portion) of the flat flow transfer path 25 laid on the process line B side of the process station (P / S) 5.
In this way, the wafer W is then flown flatly and transferred toward the downstream side of the process line B in a posture of lying on the transfer path 25.
In the process line B, in the first development unit (DEV) 26, the wafer W is subjected to a series of development processes of development, rinsing and drying while being transported in a flat flow (step S11).

  The wafer W that has undergone a series of development processes in the development unit (DEV) 26 is flattened as it is and is placed on the transfer path 25 and passes through the i-line irradiation unit (i-UV) 27 adjacent to the downstream side, where i-line irradiation is performed. Is subjected to the decoloring process (step S12). After that, the wafer W flows flat and passes through the third thermal processing unit 28 and the inspection unit (AP) 29 sequentially while being placed on the transfer path 25.

In the third thermal processing section 28, the wafer W is first subjected to post-baking as a heat treatment after development processing in the post-baking unit (POBAKE) 30 (step S13). By this post-baking, the developing solution and the cleaning solution remaining on the resist film on the wafer W are removed by evaporation, and the adhesion of the resist pattern to the substrate is enhanced.
Next, the wafer W is cooled to a predetermined substrate temperature by the cooling unit (COL) 31 (step S14). In the inspection unit (AP) 29, non-contact line width inspection, film quality / film thickness inspection, and the like are performed on the resist pattern on the wafer W (step S15).

On the cassette station (C / S) 2 side, the transfer mechanism 3 uses the transfer arm 3a to receive and receive the wafer W that has completed all the steps of the coating and developing process from the end point (unloading part) of the flat flow transfer path 25. The wafer W is accommodated in any one (usually the original) cassette C (return to step S1).
In the coating and developing processing system 1 in which processing is performed as described above, an auxiliary transfer space 32 is provided between both process lines A and B, and the wafer W is directly applied to each processing unit as necessary. In order to be able to carry in and out, the shuttle 33 on which the wafer W can be horizontally mounted in units of one sheet can be moved in both directions in the process line direction (X direction) by a drive mechanism (not shown).

In the coating and developing treatment system 1, as described above, the substrate processing apparatus according to the present invention can be applied to the coating process unit 13.
Hereinafter, based on FIG. 3, the structure and operation | movement of the application | coating process part 13 are demonstrated. FIG. 3 is a perspective view showing a schematic configuration of the coating process unit 13.

As shown in FIG. 3, the flat flow path 6 in the coating process unit 13 is a stage 35 for levitating the wafer W to a predetermined height, and a wafer W that is floated on the stage 35 for holding and carrying the wafer W. And a film-like holding sheet 36.
The stage 35 is provided along the transport path, and performs suction on the upper surface of the stage 35 and a large number of gas injection ports 35a for injecting predetermined gas (for example, air or nitrogen gas) upward (Z direction). Therefore, a large number of intake ports 35b are alternately formed so as to be arranged in a straight line at regular intervals in the X direction and the Y direction. A predetermined gas flow is formed by balancing the gas injection amount injected from the gas injection port 35a and the intake air amount from the intake port 35b (that is, making the pressure load constant), and the wafer W is placed on the stage 35. It is configured to float to a certain height from the surface.

  The holding sheet 36 is a long film sheet (for example, a width of 400 mm in the Y direction and a thickness of 0.05 mm) formed of a resin material such as polyvinyl chloride (PVC), polyolefin (PE), or PET. In this state, the stage 35 is stretched in parallel with the stage 35.

  As shown in FIG. 3, a plurality of processing holes 36a matching the shape of the surface to be processed of the wafer W are continuously formed in the holding sheet 36 along the substrate transport direction, and as shown in FIG. The upper peripheral edge W1 is configured to adhere to the inner peripheral edge of the processing hole 36a on the lower surface side of the sheet with an adhesive, thereby holding the wafer W. As the adhesive, a dicing tape having a pressure-sensitive adhesive film formed on both sides can be used.

  Further, in a state where the wafer W is held by the holding sheet 36, the processing surface of the wafer W is exposed in the processing hole 36 a on the upper surface side of the holding sheet 36, with respect to the exposed processing surface. A resist film forming process is performed. Since the peripheral edge portion W1 of the wafer W is masked by the holding sheet 36, excess resist solution does not adhere to the peripheral edge portion of the wafer W. An edge remover unit is not required.

As shown in FIG. 4, the distance d between the outer periphery of the wafer W and the inner periphery of the processing hole 36a that affects the holding force of the wafer W is determined based on various conditions such as the diameter and thickness of the wafer W. However, the wafer W is separated from the holding sheet 36 by its own weight at least in a state where buoyancy to the wafer W is not given above the stage 35.
An alignment mark 37 is attached to the inner peripheral edge of each processing hole 36a on the upper surface side of the holding sheet 36, and the alignment can be easily performed by holding the notch portion and orientation flat portion of the wafer W together. It has been made possible.

  Further, the holding sheet 36 is formed such that the length dimension in the substrate conveyance direction is longer than the length dimension of the stage 35 in the substrate conveyance direction. Near both ends of the sheet coating process unit 13, roll units 38 and 39 for moving the holding sheet 36 in one direction (substrate transport direction) are provided, and the roller driving unit 40 has at least one end side roll unit. By rotationally driving in one direction, the holding sheet 36 is continuously fed in the substrate transport direction at a predetermined speed. That is, in the example shown in the figure, the holding sheet 36 is configured to be fed in the substrate transport direction when the roll unit 39 provided on the downstream side in the substrate transport direction becomes the winding drive side. As shown in FIG. 5, the wafer flow is continuously conveyed at a predetermined speed while being adhered and held on the lower surface side of the holding sheet 36 as shown in FIG.

  As shown in FIG. 3, below the holding sheet 36 stretched above the stage 35, it is in close contact with the holding sheet 36 at a plurality of locations along the conveyance direction, and is driven to rotate around an axis in the Y direction. Thus, there are provided a drive roller 52 for feeding the holding sheet 36 in the conveying direction, and a suction block 53 for sucking the holding sheet 36 and drawing it downward in order to give a grip force of the drive roller 52 to the holding sheet 36.

The stage 35 is configured by arranging a plurality of small stages in the substrate transport direction. Among these, the carry-in stage 60 for carrying in the wafer W is provided on the most upstream side along the substrate carrying direction, and the carry-out stage 61 for carrying out the wafer W is provided on the most downstream side. At least the carry-in stage 60 and the carry-out stage 61 are configured to be capable of airflow formation control (on the stage) independent of other small stages, and affect the processing on the wafer W in the other stages. The wafer W can be loaded and unloaded without any problems.
The carry-in stage 60 and the carry-out stage 61 are provided with support pins (not shown) for supporting the wafer W on the stage when the airflow on the stage is not formed.

Specifically, when the wafer W is held by the holding sheet 36, first, the wafer W is carried into the coating process unit 13 by a transfer arm (not shown) or the like. The wafer W is then placed on support pins (not shown) provided on the carry-in stage 60.
When the wafer W is placed on the support pins, a predetermined gas flow for floating the substrate is formed on the carry-in stage 60, whereby the wafer W is lifted and raised.
At this time, the timing at which the wafer W rises is controlled, the contact position of the wafer W with respect to the holding sheet 36 and the position of the processing hole 36a are matched, and the wafer W is bonded and held on the lower surface side of the holding sheet 36.

  On the other hand, when the processing in the coating process unit 13 is finished and the wafer W is released from the holding sheet 36, the gas flow formation for floating the substrate on the unloading stage 61 is stopped, and the wafer W is held by its own weight. It is released (separated) from 36 and placed on a support pin (not shown). Then, the wafer W is unloaded by a transfer arm (not shown) or the like and delivered to the second thermal processing unit 16 which is a subsequent processing unit.

  Note that it is desirable that the holding sheet 36 be continuously conveyed at a predetermined speed in the substrate conveyance direction even while the wafer W is held and released from the holding as described above. Therefore, the plurality of wafers W can be processed continuously, and the processing efficiency can be improved.

  A resist coating unit (CT) 14 (processing means) and a drying unit (HD) 15 (processing means) are provided in the transport path on the flat transport path 6 in the coating process section 13 configured as described above. It is provided along.

The resist coating unit (CT) 14 floats on the stage 35 and is supplied with a resist nozzle 41 for supplying a resist solution to the processing surface of the wafer W conveyed by the holding sheet 36, and a nozzle for cleaning the resist nozzle 41. And a cleaning unit 42.
The resist coating unit (CT) 14 includes a nozzle moving mechanism 43 for moving the resist nozzle 41 between the coating position and the nozzle cleaning unit 42. The nozzle moving mechanism 43 moves the resist nozzle 41 in the Z direction. A lifting mechanism 44 that moves up and down, a support member 45 that holds the lifting mechanism 44, and a horizontal drive mechanism 46 that moves the support member 45 in the X-axis direction.
The resist nozzle 41 is supplied with a resist solution from a resist supply source 47 and discharges the resist solution in a strip shape from a slit-like discharge port that is long in the Y direction with respect to the wafer W.

In addition, the drying unit (HD) 15 uses a heater plate 49 that dries the resist solution immediately after being applied in the resist application unit (CT) 14 to a certain degree by heat treatment on the wafer W, and the heat of the heater plate 49. A cooler plate 51 that lowers the temperature of the heated wafer W to a predetermined temperature is provided on the stage 35 in order.
The temperature setting control of the heater plate 49 is performed by the heating control unit 48, and the temperature setting control of the cooler plate 51 is performed by the cooling control unit 50.
In this drying unit (HD) 15, the resist solution applied by the resist coating unit (CT) 14 is dried to a certain extent, so that the resist solution by a support pin or the like in the subsequent pre-baking unit (PREBAKE) 17 is obtained. It is designed to prevent transcription.

In the coating process unit 13 configured as described above, processing is performed as follows.
The wafer W that has been processed in the first thermal processing unit 10 is first placed on support pins (not shown) provided on the upper surface of the carry-in stage 60 by a transfer arm (not shown) or the like. The
Next, a predetermined gas flow is formed on the carry-in stage 60 by injecting a predetermined gas from the gas injection port 35 a formed on the upper surface of the carry-in stage 60 and sucking the injected gas from the intake port 35 b. By controlling the flow rate, flow velocity, and the like of the gas flow on the carry-in stage 60, the wafer W floats upward at a predetermined timing, adheres to a predetermined position of the processing hole 36a on the lower surface side of the holding sheet 36, and holds the holding sheet 36. Held by.

When the wafer W is held by the holding sheet 36, the wafer W held on the holding sheet 36 that is fed in the substrate transport direction by driving the roller driving unit 40 is carried into the resist coating unit (CT) 14.
In the resist coating unit (CT) 14, the resist nozzle 41 is placed at a predetermined position above the processing hole 36a by the nozzle moving mechanism 43, and a predetermined surface of the wafer W to be processed exposed from the processing hole 36a is predetermined. A resist solution is discharged at a timing to form a resist film on the surface to be processed.

The wafer W on which the resist film is formed is carried into the drying unit (HD) 15 while being held by the holding sheet 36.
In the drying unit (HD) 15, the wafer W to be transferred is first subjected to a heating process from the heater plate 49, thereby drying the surface of the resist film.
The wafer W heated and heated by the heater plate 49 is cooled to a predetermined temperature by the cooler plate 51, and conveyed to the upper part of the unloading stage 61 while being held by the holding sheet 36.

Next, the gas injection amount from the gas injection port 35a provided on the upper surface of the carry-out stage 61 is reduced, whereby the buoyancy is reduced, and the wafer W is separated from the holding sheet 36 by its own weight and released.
The wafer W released from being held by the holding sheet 36 is supported by support pins (not shown) provided on the carry-out stage 61, and is a second processing unit which is a subsequent processing unit by a transfer arm (not shown). The thermal processing section 16 is carried in.

As described above, according to the embodiment of the present invention, the processes in the resist coating unit (CT) 14 and the drying unit (HD) 15 are continuously performed on the wafer W held and transported by the holding sheet 36. Done.
That is, the processing can be performed while being transferred on the transfer path without taking out the wafer W from the holding sheet 36 (transfer path), and the wafer W can be transferred between the units by holding the wafer W on the holding sheet 36. This is done in the same state.
In addition, a plurality of processing holes 36a are continuously formed in the holding sheet 36 along the transport direction, and the processing for the plurality of wafers W is continuously performed by holding the wafers W below the processing holes 36a. To be done.

Further, the peripheral edge W1 on the processing surface side of the wafer W is masked by the holding sheet 36 at the peripheral edge of the processing hole 36a, so that no excessive resist solution adheres after the resist application, and the conventional edge remover No unit is required.
Therefore, it is not necessary to carry in / out the wafer W using a transfer robot for each processing unit as in the prior art, and the number of processing units can be reduced, so that the processing efficiency for a plurality of substrates is improved, the cost is reduced and the throughput is reduced. Can be improved.

The substrate to be processed in the present invention is not limited to a semiconductor wafer, and various substrates for flat panel displays such as an LCD substrate, CD substrates, glass substrates, photomasks, printed substrates, and the like are also possible.
In that case, the processing hole 36a shown in the embodiment may be formed in accordance with the shape of the substrate to be processed, and when the processing means such as the resist coating unit (CT) 14 can be intermittently operated, In order to provide flexibility in timing for holding the substrate, a long processing hole may be formed in the substrate transport direction, and the substrate may be held at both side edges of the processing hole in the substrate transport direction. .

  Further, the substrate processing apparatus according to the present invention is not limited to the application to the coating process unit 13 as in the above-described embodiment, and is an apparatus that performs a predetermined process on the surface to be processed exposed from the processing hole. Can be widely applied.

  The present invention can be applied to a substrate processing apparatus that performs predetermined processing on a substrate to be processed such as a semiconductor wafer, and can be suitably used in the semiconductor manufacturing industry, the electronic device manufacturing industry, and the like.

FIG. 1 is a plan view of a coating and developing treatment system including a substrate processing apparatus according to the present invention. FIG. 2 is a flowchart showing a substrate processing flow of the coating and developing processing system of FIG. FIG. 3 is a perspective view showing a schematic configuration of a coating process unit to which the substrate processing apparatus according to the present invention is applied. FIG. 4 is an enlarged plan view of a part of the holding sheet 36 included in the coating process unit. FIG. 5 is a side view of the flat flow conveying unit in the coating process unit. FIG. 6 is a plan view showing a schematic configuration of a conventional coating process unit.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Coating development processing system 13 Coating process part (substrate processing apparatus)
14 Resist application unit (processing means)
15 Drying unit 35 Stage 36 Holding sheet (sheet)
36a Processing hole 37 Alignment mark (mark)
W Semiconductor wafer (substrate to be processed)

Claims (8)

In a substrate processing apparatus for performing predetermined processing on a substrate while conveying the substrate to be processed,
A stage which is arranged along a substrate transport direction and forms a predetermined gas flow under the substrate to float the substrate; and a stage which is stretched parallel to the upper surface of the stage so as to cover the stage, A sheet formed longer than the length dimension in the substrate transport direction, and a roller driving unit that winds the sheet from one end thereof and sends it in the substrate transport direction,
The sheet has an inner peripheral edge bonded to the upper peripheral edge of the substrate on the lower surface side, and a processing hole for holding the substrate by bonding of the peripheral edges is formed along the substrate transport direction.
The substrate is held below a processing hole formed in the sheet, and conveyed in the substrate conveyance direction by driving the roller driving unit,
The substrate processing apparatus, wherein a processing target surface of the substrate to be held is exposed in the processing hole on the upper surface side of the sheet.   2. The substrate processing apparatus according to claim 1, wherein the substrate is bonded and held below a processing hole formed in the sheet in a state of being floated by a gas flow formed above the stage. .   The substrate processing apparatus according to claim 1, wherein a plurality of the processing holes are formed in the sheet along a substrate transport direction.   4. The apparatus according to claim 1, further comprising a processing unit configured to perform a predetermined process on the target surface exposed from the processing hole on the substrate transported in the substrate transport direction by driving the roller driving unit. The substrate processing apparatus described in any one of. In a state where a predetermined gas flow is not formed above the stage and below the substrate,
The substrate processing apparatus according to claim 1, wherein the substrate is separated from the sheet by its own weight. On the surface of the stage, a plurality of gas injection ports and a plurality of intake ports for inhaling the gas injected from the gas injection ports are formed,
The substrate processing apparatus according to claim 1, wherein a predetermined gas flow is formed below the substrate by the gas injection port and the intake port, and the substrate floats.   The substrate processing apparatus according to claim 1, wherein the holding sheet is a long film sheet formed of a resin material.   8. The substrate processing according to claim 1, wherein a mark used for alignment of the substrate to be held is attached to a peripheral portion of the processing hole formed in the holding sheet. apparatus.

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