JP4718863B2 - 半導体装置及び半導体装置の作製方法 - Google Patents

半導体装置及び半導体装置の作製方法 Download PDF

Info

Publication number
JP4718863B2
JP4718863B2 JP2005049592A JP2005049592A JP4718863B2 JP 4718863 B2 JP4718863 B2 JP 4718863B2 JP 2005049592 A JP2005049592 A JP 2005049592A JP 2005049592 A JP2005049592 A JP 2005049592A JP 4718863 B2 JP4718863 B2 JP 4718863B2
Authority
JP
Japan
Prior art keywords
region
thin film
film transistor
integrated circuit
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005049592A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005277406A5 (https=
JP2005277406A (ja
Inventor
舜平 山崎
浩二 大力
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005049592A priority Critical patent/JP4718863B2/ja
Publication of JP2005277406A publication Critical patent/JP2005277406A/ja
Publication of JP2005277406A5 publication Critical patent/JP2005277406A5/ja
Application granted granted Critical
Publication of JP4718863B2 publication Critical patent/JP4718863B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005049592A 2004-02-25 2005-02-24 半導体装置及び半導体装置の作製方法 Expired - Fee Related JP4718863B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005049592A JP4718863B2 (ja) 2004-02-25 2005-02-24 半導体装置及び半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004050345 2004-02-25
JP2004050345 2004-02-25
JP2005049592A JP4718863B2 (ja) 2004-02-25 2005-02-24 半導体装置及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005277406A JP2005277406A (ja) 2005-10-06
JP2005277406A5 JP2005277406A5 (https=) 2008-02-28
JP4718863B2 true JP4718863B2 (ja) 2011-07-06

Family

ID=35176670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005049592A Expired - Fee Related JP4718863B2 (ja) 2004-02-25 2005-02-24 半導体装置及び半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4718863B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007172592A (ja) * 2005-11-25 2007-07-05 Semiconductor Energy Lab Co Ltd 半導体装置
JP5891504B2 (ja) * 2011-03-08 2016-03-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタアレイ装置の製造方法
TWI578325B (zh) * 2015-08-18 2017-04-11 力旺電子股份有限公司 反熔絲型一次編程的記憶胞及其相關的陣列結構
CN109155460B (zh) * 2016-02-19 2021-03-09 夏普株式会社 扫描天线及其制造方法
WO2017155084A1 (ja) * 2016-03-11 2017-09-14 シャープ株式会社 走査アンテナならびに走査アンテナの検査方法
WO2017170133A1 (ja) * 2016-03-29 2017-10-05 シャープ株式会社 走査アンテナ、走査アンテナの検査方法および走査アンテナの製造方法
CN109690870B (zh) * 2016-08-08 2021-04-06 夏普株式会社 扫描天线
KR102522888B1 (ko) 2017-11-02 2023-04-19 도레이 카부시키가이샤 집적 회로 및 그의 제조 방법 그리고 그것을 사용한 무선 통신 장치
CN115136323B (zh) * 2020-02-20 2025-10-21 株式会社尼康 晶体管、电子装置及晶体管之制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007290A (ja) * 1999-06-24 2001-01-12 Mitsubishi Electric Corp 半導体装置、半導体装置の製造方法、および、通信方法
JP2003203994A (ja) * 2001-10-22 2003-07-18 Mitsubishi Electric Corp 半導体装置、ロボット、宝籤の運営方法、記録媒体、ソフトウェアの供給方法、電子透かし方法、被認識物の認識方法、位置検出方法、データベース、位置情報提供方法、並びに環境状況送信装置
JP4159779B2 (ja) * 2001-12-28 2008-10-01 株式会社半導体エネルギー研究所 半導体装置、電子機器

Also Published As

Publication number Publication date
JP2005277406A (ja) 2005-10-06

Similar Documents

Publication Publication Date Title
US8546912B2 (en) Semiconductor device
US8049669B2 (en) Semiconductor device comprising circuit between first and second conducting wires
US8384081B2 (en) Semiconductor device
US8575740B2 (en) Semiconductor device
US8030745B2 (en) ID chip and IC card
JP4610348B2 (ja) 半導体装置
JP4718863B2 (ja) 半導体装置及び半導体装置の作製方法
JP4566794B2 (ja) 半導体装置
JP5041672B2 (ja) 半導体装置
JP4989854B2 (ja) 半導体装置の作製方法
JP4545617B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110303

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110303

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110329

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110401

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140408

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140408

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees