JP4682541B2 - 半導体の結晶成長方法 - Google Patents

半導体の結晶成長方法 Download PDF

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Publication number
JP4682541B2
JP4682541B2 JP2004176675A JP2004176675A JP4682541B2 JP 4682541 B2 JP4682541 B2 JP 4682541B2 JP 2004176675 A JP2004176675 A JP 2004176675A JP 2004176675 A JP2004176675 A JP 2004176675A JP 4682541 B2 JP4682541 B2 JP 4682541B2
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Japan
Prior art keywords
semiconductor layer
crystal growth
layer
resistance semiconductor
field effect
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JP2004176675A
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English (en)
Japanese (ja)
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JP2006004976A (ja
JP2006004976A5 (enExample
Inventor
宏治 平田
正芳 小嵜
昌伸 千田
直樹 柴田
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2004176675A priority Critical patent/JP4682541B2/ja
Priority to DE112005001337T priority patent/DE112005001337B4/de
Priority to PCT/JP2005/011006 priority patent/WO2005122234A1/en
Priority to US11/578,965 priority patent/US7981744B2/en
Priority to TW094119288A priority patent/TWI299196B/zh
Publication of JP2006004976A publication Critical patent/JP2006004976A/ja
Publication of JP2006004976A5 publication Critical patent/JP2006004976A5/ja
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Publication of JP4682541B2 publication Critical patent/JP4682541B2/ja
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  • Thin Film Transistor (AREA)
JP2004176675A 2004-06-10 2004-06-15 半導体の結晶成長方法 Expired - Fee Related JP4682541B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004176675A JP4682541B2 (ja) 2004-06-15 2004-06-15 半導体の結晶成長方法
DE112005001337T DE112005001337B4 (de) 2004-06-10 2005-06-09 Verfahren zur Herstellung eines FET
PCT/JP2005/011006 WO2005122234A1 (en) 2004-06-10 2005-06-09 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth
US11/578,965 US7981744B2 (en) 2004-06-10 2005-06-09 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth
TW094119288A TWI299196B (en) 2004-06-10 2005-06-10 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004176675A JP4682541B2 (ja) 2004-06-15 2004-06-15 半導体の結晶成長方法

Publications (3)

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JP2006004976A JP2006004976A (ja) 2006-01-05
JP2006004976A5 JP2006004976A5 (enExample) 2006-09-21
JP4682541B2 true JP4682541B2 (ja) 2011-05-11

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JP2004176675A Expired - Fee Related JP4682541B2 (ja) 2004-06-10 2004-06-15 半導体の結晶成長方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005527102A (ja) 2001-07-24 2005-09-08 クリー　インコーポレイテッド 高電子移動度トランジスタ及びその製造方法
WO2008027027A2 (en) 2005-09-07 2008-03-06 Cree, Inc Transistor with fluorine treatment
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
JP5101143B2 (ja) * 2007-03-26 2012-12-19 国立大学法人名古屋大学 電界効果トランジスタ及びその製造方法
KR101255808B1 (ko) * 2010-09-27 2013-04-17 경북대학교 산학협력단 반도체 소자 및 그 제작 방법
JP6052570B2 (ja) * 2012-02-28 2016-12-27 エア・ウォーター株式会社 半導体基板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151996A (ja) * 2001-09-03 2003-05-23 Nichia Chem Ind Ltd ２次元電子ガスを用いた電子デバイス
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP2003218127A (ja) * 2002-01-22 2003-07-31 Hitachi Cable Ltd 電界効果トランジスタ用エピタキシャルウェハ及び電界効果トランジスタ並びにその製造方法
US7919791B2 (en) * 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same

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