JP4676430B2 - Wafer storage container - Google Patents

Wafer storage container Download PDF

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JP4676430B2
JP4676430B2 JP2006513501A JP2006513501A JP4676430B2 JP 4676430 B2 JP4676430 B2 JP 4676430B2 JP 2006513501 A JP2006513501 A JP 2006513501A JP 2006513501 A JP2006513501 A JP 2006513501A JP 4676430 B2 JP4676430 B2 JP 4676430B2
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wafer
storage container
back surface
surface protection
particles
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JPWO2005112106A1 (en
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政幸 木村
立一 平野
英樹 栗田
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JX Nippon Mining and Metals Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735Closed carriers
    • H01L21/67353Closed carriers specially adapted for a single substrate

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、半導体ウェハを一枚ごとに収容するウェハ保管容器に関し、特に、保管中に半導体ウェハ表面に付着するパーティクルを低減する技術に関する。   The present invention relates to a wafer storage container for storing semiconductor wafers one by one, and more particularly to a technique for reducing particles adhering to a semiconductor wafer surface during storage.

一般的に、半導体ウェハは、その表面を清潔に維持する必要があるために一枚ごとにウェハ保管容器に収容された状態で保管或いは輸送される。
上記ウェハ保管容器には、例えば特許文献1に開示されている保管容器が使用される。図6は従来用いられている半導体ウェハの保管容器の概略を示す斜視図で、図7はその断面図である。
Generally, since it is necessary to keep the surface clean, semiconductor wafers are stored or transported in a state in which they are stored in a wafer storage container.
As the wafer storage container, for example, a storage container disclosed in Patent Document 1 is used. FIG. 6 is a perspective view schematically showing a conventional semiconductor wafer storage container, and FIG. 7 is a cross-sectional view thereof.

図6,7に示すように、ウェハ保管容器10はウェハWを保持可能なドーム状凹部11aを有するウェハ収容部材11と、蓋部材12と、ウェハWと前記蓋部材12の間に配置される押さえ部材13と、で構成される。   As shown in FIGS. 6 and 7, the wafer storage container 10 is disposed between a wafer accommodating member 11 having a dome-shaped recess 11 a capable of holding a wafer W, a lid member 12, and between the wafer W and the lid member 12. And a pressing member 13.

ウェハ収容部材11及び蓋部材12は例えばポリプロピレンで形成され、ウェハ収容部材11と蓋部材12が係合してウェハ収容部を密閉する。半導体ウェハWは、ウェハ表面W1を下方に向けた状態でウェハ収容部材11のドーム状凹部11aに配置され、ドーム状凹部11aとウェハ周縁部で当接して保持されるので、ウェハ表面W1に他の部材が接触してパーティクルが付着するのを防止できる。   The wafer accommodating member 11 and the lid member 12 are made of, for example, polypropylene, and the wafer accommodating member 11 and the lid member 12 are engaged to seal the wafer accommodating portion. The semiconductor wafer W is disposed in the dome-shaped recess 11a of the wafer accommodating member 11 with the wafer surface W1 facing downward, and is held in contact with the dome-shaped recess 11a at the peripheral edge of the wafer. It is possible to prevent particles from adhering due to contact with the members.

押さえ部材13は、中心部分13aから外に向かい射出される複数の脚部13bを有し、中心部分13a及び脚部13bは全体的に湾曲して形成され、中心部分13aと脚部13bを横切る断面は弓形をなす。また、押さえ部材13は、中心部分13aと脚部13bの先端との変位が、蓋部材12をウェハ収容部材11に係合したときにウェハ裏面W2と蓋部材12の内壁面12aとの間に形成される空間の高さよりも大きくなるように成形されている。したがって、ウェハ収容部材11と蓋部材12を係合したときに中心部分13aが蓋部材12に押されて脚部13bの先端でウェハ裏面W2の周縁部を押圧することとなる。   The pressing member 13 has a plurality of leg portions 13b that are ejected outward from the central portion 13a. The central portion 13a and the leg portions 13b are formed to be curved as a whole, and cross the central portion 13a and the leg portion 13b. The cross section is arcuate. In addition, the pressing member 13 has a displacement between the center portion 13a and the tip of the leg portion 13b between the wafer back surface W2 and the inner wall surface 12a of the lid member 12 when the lid member 12 is engaged with the wafer housing member 11. It is shaped to be larger than the height of the space to be formed. Therefore, when the wafer accommodating member 11 and the lid member 12 are engaged, the central portion 13a is pushed by the lid member 12, and the peripheral edge portion of the wafer back surface W2 is pushed by the tip of the leg portion 13b.

半導体ウェハは上述した構造のウェハ保管容器10に収容されるが、蓋部材12とウェハ収容部材11とは取り扱いやすいようにシール部材等を用いて密閉されているわけではないので、係合部からパーティクルが進入するのを完全に回避することはできない。また、ウェハ保管容器内の空間にパーティクルが残留していたり、或いはウェハ保管容器10自体の劣化によりパーティクルが新たに生じたりすることがある。   Although the semiconductor wafer is accommodated in the wafer storage container 10 having the structure described above, the lid member 12 and the wafer accommodation member 11 are not sealed using a seal member or the like so as to be easily handled. It is impossible to completely avoid the entry of particles. Further, particles may remain in the space inside the wafer storage container, or particles may be newly generated due to deterioration of the wafer storage container 10 itself.

このため、上記ウェハ保管容器に半導体ウェハを収容した状態でそのまま長時間放置した場合、半導体ウェハの表裏面にパーティクルが付着する虞がある。そこで、一般には、ウェハを収容したウェハ保管容器をラミネート袋で包装し、さらにラミネート袋内を排気して不活性ガスで充填し、ラミネート袋を密閉することで外気との接触を遮断し、外部からウェハ保管容器内にパーティクルが進入するのを防止している。具体的には、半導体ウェハを収容したウェハ保管容器を、高いガスバリア性を有するラミネート袋(例えばアルミラミネート袋)に入れ、該ラミネート袋を真空チャンバーに入れてチャンバー内を減圧し、その後チャンバー内に窒素等の不活性ガスを導入し、チャンバー内のヒータでラミネート袋の口を熱圧着してラミネート袋を密閉している。
特公昭48−28953号公報
Therefore, when the semiconductor wafer is stored in the wafer storage container for a long time, particles may adhere to the front and back surfaces of the semiconductor wafer. Therefore, in general, a wafer storage container containing wafers is packed with a laminate bag, and the inside of the laminate bag is evacuated and filled with an inert gas, and the laminate bag is sealed to prevent contact with outside air. Prevents particles from entering the wafer storage container. Specifically, a wafer storage container containing a semiconductor wafer is placed in a laminate bag having a high gas barrier property (for example, an aluminum laminate bag), the laminate bag is placed in a vacuum chamber, the inside of the chamber is depressurized, and then the inside of the chamber is placed. An inert gas such as nitrogen is introduced, and the laminate bag is hermetically sealed by thermocompression of the mouth of the laminate bag with a heater in the chamber.
Japanese Patent Publication No. 48-28953

しかしながら、上述したウェハ保管方法では、ウェハ保管容器をラミネート袋で包装して密閉した後にウェハ保管容器内にパーティクルが進入する可能性は低いが、ウェハ保管容器をラミネート袋で包装する際にパーティクルが進入する虞がある。例えば、ウェハ保管容器を真空チャンバー内に配置した後、真空ポンプで減圧し、チャンバー内に不活性ガスを導入する際に少なからず空気の流れが生じるので、このときに蓋部材12とウェハ収容部材11の係合部からウェハ保管容器内にパーティクルが進入することが考えられる。   However, in the above-described wafer storage method, it is unlikely that particles will enter the wafer storage container after the wafer storage container is packaged and sealed with a laminate bag. There is a risk of entering. For example, since the wafer storage container is placed in the vacuum chamber and then depressurized by a vacuum pump and an inert gas is introduced into the chamber, a flow of air is generated. It is conceivable that particles enter the wafer storage container from the 11 engaging portions.

また、通常、半導体ウェハはその周縁部にオリエンテーションフラットが設けられており完全な円形ではないため、ウェハ保管容器内に進入したパーティクルは、半導体ウェハとウェハ収容部のドーム状凹部との隙間から半導体ウェハ表面側に回り込み、ウェハ表面に付着することもある。このような場合に、ウェハ保管容器から半導体ウェハを取り出し、そのまま該半導体ウェハの表面にエピタキシャル成長等を行うと、異常成長等を生じることがある。このため、エピタキシャル成長の前工程としてウェハ表面の清浄化処理をする必要が生じるので、工程が複雑化するという問題がある。   Also, since semiconductor wafers usually have an orientation flat at the peripheral edge and are not completely circular, particles that enter the wafer storage container are removed from the gap between the semiconductor wafer and the dome-shaped recess of the wafer container. It may wrap around the wafer surface and adhere to the wafer surface. In such a case, if the semiconductor wafer is taken out from the wafer storage container and directly subjected to epitaxial growth or the like on the surface of the semiconductor wafer, abnormal growth or the like may occur. For this reason, since it is necessary to clean the wafer surface as a pre-process of epitaxial growth, there is a problem that the process becomes complicated.

つまり、ウェハ保管容器をラミネート袋で包装する際にパーティクルが保管容器内に進入しないように、或いは保管容器内に進入したパーティクルが半導体ウェハ(特に表面)に付着しないようにすることが重要となる。   That is, when packaging the wafer storage container with the laminate bag, it is important to prevent the particles from entering the storage container or to prevent the particles entering the storage container from adhering to the semiconductor wafer (particularly the surface). .

本発明は、半導体ウェハを一枚ごとに収容するウェハ保管容器に関し、保管中の半導体ウェハ表面にパーティクルが付着するのを効果的に低減できる技術を提供することを目的とする。   The present invention relates to a wafer storage container for storing semiconductor wafers one by one, and an object thereof is to provide a technique capable of effectively reducing the adhesion of particles to the surface of a semiconductor wafer being stored.

本発明は、上記課題を解決するためになされたもので、ウェハを一枚ごとに収容するウェハ保管容器であって、ウェハの周縁部と当接してウェハを保持可能なドーム状凹部を有するウェハ収容部材と、該ウェハ収容部材と係合してウェハ収容部を密閉可能な蓋部材と、を有し、さらに、前記ドーム状凹部の開口部と略同一形状に成型され、前記ドーム状凹部に表面を向けて載置されたウェハの裏面全面と密着するウェハ裏面保護部材を備えるようにしたものである。   The present invention has been made to solve the above problems, and is a wafer storage container for storing wafers one by one, and a wafer having a dome-shaped recess capable of holding a wafer in contact with the peripheral edge of the wafer A housing member and a lid member that can be engaged with the wafer housing member to seal the wafer housing portion, and is molded into substantially the same shape as the opening of the dome-shaped recess, and is formed in the dome-shaped recess. A wafer back surface protection member that is in close contact with the entire back surface of the wafer placed with the front surface facing is provided.

これにより、半導体ウェハをウェハ保管容器に収容し、該保管容器をラミネート袋で包装して袋内を不活性ガスで置換する際に、空気の流れが生じてウェハ保管容器内にパーティクルが進入してもパーティクルはウェハ裏面保護部材で捕獲されることとなるので、半導体ウェハの裏面にパーティクルが付着することはない。また、ウェハ裏面保護部材をウェハ収容部材のドーム状凹部の開口部と略同一形状に成型することで、オリエンテーションフラットの位置に生じる隙間からパーティクルがウェハ表面側に回り込むことはなくなるので、半導体ウェハの表面にパーティクルが付着することもない。   As a result, when the semiconductor wafer is accommodated in the wafer storage container, the storage container is packed with a laminate bag, and the inside of the bag is replaced with an inert gas, an air flow is generated and particles enter the wafer storage container. However, since the particles are captured by the wafer back surface protection member, the particles do not adhere to the back surface of the semiconductor wafer. In addition, by molding the wafer back surface protection member into substantially the same shape as the opening of the dome-shaped recess of the wafer housing member, particles do not go around the wafer surface from the gap generated at the orientation flat position. Particles do not adhere to the surface.

また、前記ウェハ裏面保護部材と前記蓋部材の間に配置され、前記ウェハ収容部材と前記蓋部材を係合したときに前記蓋部材に押されてウェハを前記ウェハ収容部に押圧する押さえ部材を備えるようにした。例えば、断面形状が弓形となる部材や、上面部と底面部の間に弾性体を狭持してなる部材を用いることができる。このとき、押さえ部材により押圧される部分は、裏面保護部材の全面であっても周縁部等の一部であっても構わない。これにより、ウェハをウェハ収容部材に固定できるとともに、ウェハ裏面とウェハ裏面保護部材との密着性を高めることができる。   A holding member that is disposed between the wafer back surface protection member and the lid member and is pressed by the lid member when the wafer housing member and the lid member are engaged to press the wafer against the wafer housing portion; I prepared. For example, a member whose cross-sectional shape is an arcuate shape or a member having an elastic body sandwiched between an upper surface portion and a bottom surface portion can be used. At this time, the part pressed by the pressing member may be the entire surface of the back surface protection member or a part of the peripheral edge. Thereby, while being able to fix a wafer to a wafer accommodating member, the adhesiveness of a wafer back surface and a wafer back surface protection member can be improved.

或いは、前記ウェハ裏面保護部材に、前記ウェハ収容部材と前記蓋部材を係合したときに前記蓋部材に押されてウェハを前記ウェハ収容部に押圧する押さえ部材としての機能を持たせるようにしてもよい。例えば、ウェハ裏面保護部材のウェハと密着する面とは反対の面に板バネ等の弾性部材を設けるようにすることで実現できる。   Alternatively, the wafer back surface protection member has a function as a pressing member that is pressed by the lid member when the wafer housing member and the lid member are engaged, and presses the wafer against the wafer housing portion. Also good. For example, it can be realized by providing an elastic member such as a leaf spring on the surface of the wafer back surface protection member opposite to the surface in close contact with the wafer.

また、前記ウェハと前記ウェハ収容部材の間に配置され、前記ドーム状凹部と密着し、ウェハ周縁部と当接するウェハ表面保護部材を備えるようにした。半導体ウェハの表面側は、ウェハ表面と他の部材とが接触することにより摩擦等でパーティクルが発生するのを防止するために、ウェハ収容部材のドーム状凹部によりウェハ周縁部を保持するようにしウェハ表面は開放されている。しかし、このために半導体ウェハの表面側には通常押さえ部材が挿入されているウェハ裏面側よりも大きな空間が生じてしまい、パーティクルが残存しやすい状態となっている。そこで、ウェハ表面保護部材を設けることで、半導体ウェハとドーム状凹部の間に形成される空間を小さくするようにした。   Further, a wafer surface protection member is provided between the wafer and the wafer housing member, in close contact with the dome-shaped recess, and in contact with the peripheral edge of the wafer. In order to prevent particles from being generated due to friction or the like due to contact between the wafer surface and other members, the wafer peripheral surface is held by the dome-shaped recess of the wafer housing member. The surface is open. However, for this reason, a larger space is formed on the front surface side of the semiconductor wafer than on the rear surface side of the wafer where the normal pressing member is inserted, and particles are likely to remain. Therefore, by providing a wafer surface protection member, the space formed between the semiconductor wafer and the dome-shaped recess is reduced.

さらに、前記ウェハ裏面保護部材及びウェハ表面保護部材は、ポリエチレン、ポリプロピレン、ポリエステル、又は塩化ビニル等のパーティクルが発生しにくい材質で形成するようにした。これにより、保護部材自体からパーティクルが発生し、半導体ウェハに付着するのを回避できる。   Further, the wafer back surface protection member and the wafer surface protection member are made of a material that is less likely to generate particles such as polyethylene, polypropylene, polyester, or vinyl chloride. Thereby, it can avoid that a particle generate | occur | produces from protection member itself and adheres to a semiconductor wafer.

また、前記ウェハ裏面保護部材及びウェハ表面保護部材は、フッ素系樹脂(例えばPTFE)等の放出ガス量の少ない材質で形成するのが望ましい。これにより、保護部材自体から発生するアウトガスにより半導体ウェハが汚染され、ウェハの品質が劣化するのを回避できる。   The wafer back surface protection member and the wafer surface protection member are preferably formed of a material with a small amount of released gas, such as a fluorine-based resin (for example, PTFE). As a result, it is possible to prevent the semiconductor wafer from being contaminated by the outgas generated from the protective member itself and deteriorating the quality of the wafer.

本発明によれば、半導体ウェハをウェハ保管容器に収容し、該保管容器をラミネート袋で包装して袋内を不活性ガスで置換する際に、空気の流れが生じてウェハ保管容器内にパーティクルが進入しても半導体ウェハの表裏面にパーティクルが付着して汚染されるのを防止できるので、半導体ウェハの表面を清潔な状態で長期間保持することができる。したがって、半導体デバイスの製造業者は、ウェハ保管容器から半導体ウェハを取り出し、そのまま該半導体ウェハの表面にエピタキシャル成長を行うことも可能となるので、エピタキシャル成長の前工程としてウェハ表面の清浄化処理をする必要もなく、生産性を向上できるという効果を奏する。   According to the present invention, when a semiconductor wafer is accommodated in a wafer storage container, the storage container is packaged with a laminate bag, and the inside of the bag is replaced with an inert gas, an air flow is generated and particles are generated in the wafer storage container. Even if it enters, particles can be prevented from adhering to the front and back surfaces of the semiconductor wafer and contaminated, so that the surface of the semiconductor wafer can be kept clean for a long time. Therefore, the semiconductor device manufacturer can take out the semiconductor wafer from the wafer storage container and perform epitaxial growth on the surface of the semiconductor wafer as it is. Therefore, it is necessary to clean the wafer surface as a pre-process of epitaxial growth. There is an effect that productivity can be improved.

第1の実施形態に係る半導体ウェハの保管容器の概略を示す斜視図である。It is a perspective view showing the outline of the storage container of the semiconductor wafer concerning a 1st embodiment. 第1の実施形態に係る半導体ウェハの保管容器の断面図である。It is sectional drawing of the storage container of the semiconductor wafer which concerns on 1st Embodiment. 第2の実施形態に係る半導体ウェハの保管容器の概略を示す斜視図である。It is a perspective view which shows the outline of the storage container of the semiconductor wafer which concerns on 2nd Embodiment. 第2の実施形態に係る半導体ウェハの保管容器の断面図である。It is sectional drawing of the storage container of the semiconductor wafer which concerns on 2nd Embodiment. 押さえ部材の機能を持たせたウェハ裏面保護部材の一例である。It is an example of the wafer back surface protection member which gave the function of the pressing member. 従来のウェハ保管容器の概略を示す斜視図である。It is a perspective view which shows the outline of the conventional wafer storage container. 従来のウェハ保管容器の断面図である。It is sectional drawing of the conventional wafer storage container.

符号の説明Explanation of symbols

10 ウェハ保管容器
11 ウェハ収容部材
11a ドーム状凹部
12 蓋部材
13 押さえ部材
13a 中央部分
13b 脚部
14 ウェハ裏面保護シート(ウェハ裏面保護部材)
15 ウェハ表面保護シート(ウェハ表面保護部材)
W 半導体ウェハ
DESCRIPTION OF SYMBOLS 10 Wafer storage container 11 Wafer accommodating member 11a Dome-shaped recessed part 12 Cover member 13 Holding member 13a Center part 13b Leg part 14 Wafer back surface protection sheet (wafer back surface protection member)
15 Wafer surface protection sheet (wafer surface protection member)
W Semiconductor wafer

以下、本発明の好適な実施の形態を図面に基づいて説明する。
(第1の実施形態)
図1は第1の実施形態に係る半導体ウェハの保管容器の概略を示す斜視図で、図2はその断面図である。
図1,2に示すように、ウェハ保管容器10はウェハWを保持可能なドーム状凹部11aを有するウェハ収容部材11と、蓋部材12と、ウェハWと前記蓋部材12の間に配置される押さえ部材13と、で構成される。さらに、本実施形態では、ウェハ表面W1をドーム状凹部11aに向けて配置したときに、ウェハWと押さえ部材13の間に配置され、ウェハ裏面W2の全面と密着するウェハ裏面保護部材としてのウェハ裏面保護シート14を備える。
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the drawings.
(First embodiment)
FIG. 1 is a perspective view schematically showing a semiconductor wafer storage container according to the first embodiment, and FIG. 2 is a sectional view thereof.
As shown in FIGS. 1 and 2, the wafer storage container 10 is disposed between a wafer accommodating member 11 having a dome-shaped recess 11 a capable of holding a wafer W, a lid member 12, and between the wafer W and the lid member 12. And a pressing member 13. Furthermore, in the present embodiment, when the wafer surface W1 is disposed toward the dome-shaped recess 11a, the wafer is disposed between the wafer W and the pressing member 13 and serves as a wafer back surface protection member that is in close contact with the entire surface of the wafer back surface W2. A back surface protection sheet 14 is provided.

ウェハ収容部材11及び蓋部材12は例えばポリプロピレンで形成され、ウェハ収容部材11と蓋部材12が係合してウェハ収容部を密閉する。半導体ウェハWは、ウェハ表面W1を下方に向けた状態でウェハ収容部材11のドーム状凹部11aに配置され、ドーム状凹部11aとウェハ周縁部で当接して保持される。   The wafer accommodating member 11 and the lid member 12 are made of, for example, polypropylene, and the wafer accommodating member 11 and the lid member 12 are engaged to seal the wafer accommodating portion. The semiconductor wafer W is disposed in the dome-shaped recess 11a of the wafer housing member 11 with the wafer surface W1 facing downward, and is held in contact with the dome-shaped recess 11a at the peripheral edge of the wafer.

ウェハ裏面保護シート14は、厚さ100μmのフッ素系樹脂フィルムでなり、ウェハ収容部材のドーム状凹部11aの開口部と略同一形状に成型され、半導体ウェハ裏面W2と全面で密着させたときに、ドーム状凹部11aの開口部の全面が覆われるようになっている。すなわち、半導体ウェハWに設けられたオリエンテーションフラットにより生じるウェハ収容部材11との隙間も覆われることとなる。また、ウェハ裏面保護シート14は、フッ素系樹脂フィルムで形成されているので、保護シート14自体からパーティクルが発生することは少なく、半導体ウェハWにパーティクルが付着するのを防止できる。また、フッ素系樹脂フィルムは放出ガス量が少ないので、ウェハ裏面保護シート14からのアウトガスにより半導体ウェハWが汚染されウェハの品質が劣化するのを回避できる。   The wafer back surface protection sheet 14 is made of a fluororesin film having a thickness of 100 μm, is molded in substantially the same shape as the opening of the dome-shaped recess 11a of the wafer housing member, and is adhered to the entire surface of the semiconductor wafer back surface W2. The entire surface of the opening of the dome-shaped recess 11a is covered. That is, the gap with the wafer housing member 11 generated by the orientation flat provided on the semiconductor wafer W is also covered. In addition, since the wafer back surface protection sheet 14 is formed of a fluorine resin film, particles are hardly generated from the protection sheet 14 itself, and particles can be prevented from adhering to the semiconductor wafer W. Further, since the fluorine-based resin film has a small amount of released gas, it can be avoided that the semiconductor wafer W is contaminated by the outgas from the wafer back surface protection sheet 14 and the quality of the wafer is deteriorated.

押さえ部材13は、中心部分13aから外に向かい射出される複数の脚部13bを有し、中心部分13a及び脚部13bは全体的に湾曲して形成され、中心部分13aと脚部13bを横切る断面は弓形をなす。また、押さえ部材13は、中心部分13aと脚部13bの先端との変位が、蓋部材12をウェハ収容部材11に係合したときにウェハ裏面W2と蓋部材12の内壁面12aとの間に形成される空間の高さよりも大きくなるように成形されている。   The pressing member 13 has a plurality of leg portions 13b that are ejected outward from the central portion 13a. The central portion 13a and the leg portions 13b are formed to be curved as a whole, and cross the central portion 13a and the leg portion 13b. The cross section is arcuate. In addition, the pressing member 13 has a displacement between the center portion 13a and the tip of the leg portion 13b between the wafer back surface W2 and the inner wall surface 12a of the lid member 12 when the lid member 12 is engaged with the wafer housing member 11. It is shaped to be larger than the height of the space to be formed.

したがって、ウェハ収容部材11と蓋部材12を係合したときに、押さえ部材13の中心部分13aが蓋部材12に押されて脚部13bの先端でウェハ裏面保護シート14を介して半導体ウェハWの周縁部を押圧することとなる。   Therefore, when the wafer accommodating member 11 and the lid member 12 are engaged, the central portion 13a of the pressing member 13 is pushed by the lid member 12, and the semiconductor wafer W of the semiconductor wafer W is passed through the wafer back surface protection sheet 14 at the tip of the leg portion 13b. The peripheral edge will be pressed.

なお、本実施形態では断面形状が弓形をなす押さえ部材13を用いているが、上面部と底面部の間に弾性体を狭持してなる部材を用いるようにしてもよい。また、押さえ部材により押圧される部分は、本実施形態のように裏面保護シートの周縁部等の一部としても、裏面保護シートの全面としても構わない。特に、裏面保護シートの全面を押圧する構成の押さえ部材を用いる場合、押さえ部材と裏面保護シートを予め接着しておくこともできる。   In this embodiment, the pressing member 13 having a bow shape in cross section is used, but a member having an elastic body sandwiched between the upper surface portion and the bottom surface portion may be used. Further, the portion pressed by the pressing member may be a part of the peripheral edge portion of the back surface protection sheet as in the present embodiment or the entire surface of the back surface protection sheet. In particular, when a pressing member configured to press the entire surface of the back surface protection sheet is used, the pressing member and the back surface protection sheet can be bonded in advance.

本実施形態によれば、半導体ウェハWをウェハ保管容器10に収容し、該保管容器10をラミネート袋で包装して袋内を不活性ガスで置換する際に、空気の流れが生じてウェハ保管容器10内にパーティクルが進入してもパーティクルはウェハ裏面保護シート14で捕獲されることとなるので、半導体ウェハ裏面W1にパーティクルが付着することはない。また、半導体ウェハWに設けられたオリエンテーションフラットの位置に隙間が生じても、ウェハ保管容器10内に進入したパーティクルはウェハ表面側に回り込むことはできないので、半導体ウェハ表面W1にパーティクルが付着することもない。   According to the present embodiment, when the semiconductor wafer W is accommodated in the wafer storage container 10 and the storage container 10 is packaged with the laminate bag and the inside of the bag is replaced with the inert gas, the air flow is generated and the wafer is stored. Even if particles enter the container 10, the particles are captured by the wafer back surface protection sheet 14, so that the particles do not adhere to the semiconductor wafer back surface W 1. Further, even if a gap is generated at the orientation flat position provided on the semiconductor wafer W, the particles that have entered the wafer storage container 10 cannot wrap around the wafer surface side, so that the particles adhere to the semiconductor wafer surface W1. Nor.

なお、ウェハ保管容器10の大きさは制限されず、収容する半導体ウェハWの大きさに応じたもの、例えば、半導体ウェハWの径よりもドーム状凹部11aの径が若干大きいものを使用すればよい。   Note that the size of the wafer storage container 10 is not limited, and a wafer according to the size of the semiconductor wafer W to be accommodated, for example, a dome-shaped recess 11a having a diameter slightly larger than the diameter of the semiconductor wafer W may be used. Good.

(第2の実施形態)
図3は第2の実施形態に係る半導体ウェハの保管容器の概略を示す斜視図で、図4はその断面図である。
第2の実施形態に係るウェハ保管容器10の構成は第1の実施形態とほとんど同じであり、同じ部材には同じ符号を付している。第2の実施形態では、半導体ウェハ表面W1をドーム状凹部11aに向けて配置したときに、半導体ウェハWとドーム状凹部11aの間にウェハ表面保護部材としてのウェハ表面保護シート15を備えている点が第1の実施形態のウェハ保管容器10と異なる。
(Second Embodiment)
FIG. 3 is a perspective view schematically showing a semiconductor wafer storage container according to the second embodiment, and FIG. 4 is a sectional view thereof.
The configuration of the wafer storage container 10 according to the second embodiment is almost the same as that of the first embodiment, and the same members are denoted by the same reference numerals. In the second embodiment, the wafer surface protection sheet 15 as a wafer surface protection member is provided between the semiconductor wafer W and the dome-shaped recess 11a when the semiconductor wafer surface W1 is disposed toward the dome-shaped recess 11a. The point differs from the wafer storage container 10 of the first embodiment.

ウェハ表面保護シート15は、ウェハ裏面保護シートと同様に厚さ200μmフッ素系樹脂フィルムでなり、ドーム状凹部11aの内壁面と略同一の形状を有し、ドーム状凹部11aと密着する。これにより、半導体ウェハWとドーム状凹部11aの間に形成される空間が少しでも小さくなるようにしている。したがって、ウェハ表面保護シート15の厚さは特に制限されないが、半導体ウェハWの保持性能を失わない程度に厚くするのが望ましい。   The wafer front surface protection sheet 15 is made of a 200 μm-thick fluororesin film like the wafer back surface protection sheet, has substantially the same shape as the inner wall surface of the dome-shaped recess 11a, and is in close contact with the dome-shaped recess 11a. As a result, the space formed between the semiconductor wafer W and the dome-shaped recess 11a is made as small as possible. Therefore, the thickness of the wafer surface protection sheet 15 is not particularly limited, but it is desirable to increase the thickness so that the holding performance of the semiconductor wafer W is not lost.

すなわち、半導体ウェハWの表面側は、ウェハ表面W1が他の部材と接触することにより摩擦等でパーティクルが発生するのを防止するために、ウェハ収容部材11のドーム状凹部11aによりウェハ周縁部を保持するようにしウェハ表面W1は開放されている。このために、半導体ウェハWの表面側には押さえ部材13が挿入されているウェハ裏面側よりも大きな空間が生じてしまい、パーティクルが残存しやすく、比較的パーティクルの付着しやすい状態にあるといえる。そこで、ウェハ表面保護シート15を設けることで、半導体ウェハWとドーム状凹部11aの間に形成される空間を小さくし、パーティクルが上記空間に残存するのを抑制するようにしている。   That is, on the front side of the semiconductor wafer W, in order to prevent particles from being generated due to friction or the like due to the wafer surface W1 coming into contact with other members, the peripheral edge of the wafer is formed by the dome-shaped recess 11a of the wafer containing member 11. The wafer surface W1 is held open. For this reason, a larger space is formed on the front surface side of the semiconductor wafer W than the back surface side of the wafer into which the pressing member 13 is inserted, so that it can be said that particles are likely to remain and are relatively easily attached to the particles. . Therefore, by providing the wafer surface protection sheet 15, the space formed between the semiconductor wafer W and the dome-shaped recess 11 a is reduced, and particles are prevented from remaining in the space.

本実施形態によれば、半導体ウェハWとドーム状凹部11aとの間の空間は従来のウェハ保管容器に比べて小さくなるため、半導体ウェハWの表面側にパーティクルが残存する可能性は低くなるので、半導体ウェハWの表面をより清潔に保つことができる。   According to the present embodiment, since the space between the semiconductor wafer W and the dome-shaped recess 11a is smaller than that of the conventional wafer storage container, the possibility that particles remain on the surface side of the semiconductor wafer W is reduced. The surface of the semiconductor wafer W can be kept clean.

以下に、上記第1の実施形態、第2の実施形態に係るウェハ保管容器10を用いて、ウェハ保管容器10をラミネート袋で包装して袋内を不活性ガス(例えば窒素)で置換する前後のウェハ表裏面のパーティクル量を測定した結果を示す。   Before and after the wafer storage container 10 according to the first embodiment and the second embodiment is used, the wafer storage container 10 is wrapped with a laminate bag, and the inside of the bag is replaced with an inert gas (for example, nitrogen). The result of measuring the amount of particles on the front and back surfaces of the wafer is shown.

具体的には、まず、半導体ウェハ表裏面のパーティクルを測定し(包装前のパーティクル量)、測定した半導体ウェハをウェハ保管容器に収容し、該ウェハ保管容器をアルミラミネート袋に入れた。そして、前記ラミネート袋を真空チャンバーに入れてチャンバー内を減圧し、その後チャンバー内に窒素等の不活性ガスを導入し、チャンバー内のヒータでラミネート袋の口を熱圧着してラミネート袋を密閉した。次に、この状態で数時間(例えば3時間)放置した後、ラミネート袋を開封してウェハ保管容器から半導体ウェハを取り出し、ウェハ表裏面のパーティクル量を測定した(包装後のパーティクル)。ここで、ウェハ表面のパーティクルについては異物検査装置を用いて測定し、ウェハ裏面のパーティクルについては目視で観察した。   Specifically, first, particles on the front and back surfaces of the semiconductor wafer were measured (particle amount before packaging), the measured semiconductor wafer was accommodated in a wafer storage container, and the wafer storage container was placed in an aluminum laminate bag. Then, the laminate bag is put in a vacuum chamber, the inside of the chamber is decompressed, and then an inert gas such as nitrogen is introduced into the chamber, and the laminate bag is sealed by thermocompression bonding with the heater in the chamber. . Next, after leaving in this state for several hours (for example, 3 hours), the laminate bag was opened, the semiconductor wafer was taken out from the wafer storage container, and the amount of particles on the front and back surfaces of the wafer was measured (particles after packaging). Here, the particles on the wafer front surface were measured using a foreign matter inspection apparatus, and the particles on the wafer back surface were visually observed.

なお、半導体ウェハには2インチ径のInP半導体ウェハを用い、複数枚のInP半導体ウェハについて測定した。また、比較例として従来のウェハ保管容器(図5,6参照)を用いて同様の測定を行った。   Note that a 2 inch diameter InP semiconductor wafer was used as the semiconductor wafer, and a plurality of InP semiconductor wafers were measured. Moreover, the same measurement was performed using the conventional wafer storage container (refer FIG.5, 6) as a comparative example.

表1は、50枚のInP半導体ウェハについてウェハ表面のパーティクルを異物検査装置で測定したパーティクル密度の平均値で、粒径0.3μm以上のパーティクルを対象としている。   Table 1 shows the average value of the particle density obtained by measuring the particles on the surface of the 50 InP semiconductor wafers with a foreign substance inspection apparatus, and targets particles having a particle diameter of 0.3 μm or more.

表1より、比較例では包装後のウェハ表面パーティクル密度が包装前より0.16個/cm2増加しているのに対して、裏面保護シート14だけ設けた第1の実施形態に係るウェハ保管容器を用いた場合は包装後のウェハ表面パーティクル密度が僅か0.04個/cm2しか増加していない。これより、ウェハ裏面保護シート14により、不活性ガスで置換する際に進入するパーティクルがウェハ表面に付着するのを効率よく抑制できているといえる。さらに、表ウェハ表面保護シート15も設けた第2の実施形態に係るウェハ保管容器を用いた場合は包装前後でウェハ表面パーティクル密度の変化は見られず、不活性ガスで置換する際に進入するパーティクルがウェハ表面に付着するのをほぼ完全に抑制できているといえる。From Table 1, in the comparative example, the wafer surface particle density after packaging is increased by 0.16 particles / cm 2 before packaging, whereas the wafer storage according to the first embodiment in which only the back surface protection sheet 14 is provided. When a container is used, the wafer surface particle density after packaging is increased only by 0.04 particles / cm 2 . From this, it can be said that the wafer back surface protective sheet 14 can efficiently suppress adhesion of particles that enter when replacing with the inert gas to the wafer surface. Furthermore, when the wafer storage container according to the second embodiment provided with the front wafer surface protection sheet 15 is used, no change in the wafer surface particle density is observed before and after packaging, and the wafer enters when replacing with an inert gas. It can be said that the particles are almost completely suppressed from adhering to the wafer surface.

Figure 0004676430
Figure 0004676430

表2は、20枚のInP半導体ウェハについてウェハ裏面のパーティクルを目視で観察したウェハ上のパーティクル数の平均値で、粒径約0.1mm以上のパーティクルを対象としている。ここで、半導体ウェハの裏面に付着したパーティクルについては、半導体ウェハの品質にさほど影響しないので、ウェハ表面に付着したパーティクルほど厳密に評価する必要はないと考え、目視での観察とした。   Table 2 shows the average value of the number of particles on the wafer obtained by visually observing particles on the back surface of 20 InP semiconductor wafers, and targets particles having a particle diameter of about 0.1 mm or more. Here, since the particles adhering to the back surface of the semiconductor wafer do not significantly affect the quality of the semiconductor wafer, it is considered that the particles adhering to the wafer surface do not need to be evaluated more strictly and were observed visually.

表2より、比較例では包装後のウェハ裏面のパーティクル個数が包装前より1.3個/ウェハ増加しているのに対して、裏面保護シート14だけ設けた第1の実施形態及び第2の実施形態に係るウェハ保管容器を用いた場合は包装後のウェハ裏面のパーティクル個数に変化は見られなかった。すなわち、ウェハ裏面保護シート14により、不活性ガスで置換する際に進入するパーティクルがウェハ裏面に付着するのをほぼ完全に抑制できているといえる。   From Table 2, in the comparative example, the number of particles on the back surface of the wafer after packaging is 1.3 / wafer increased from that before packaging, whereas the first embodiment and the second embodiment in which only the back surface protection sheet 14 is provided. When the wafer storage container according to the embodiment was used, no change was observed in the number of particles on the back surface of the wafer after packaging. In other words, it can be said that the wafer back surface protective sheet 14 can almost completely suppress the particles that enter when replacing with the inert gas from adhering to the wafer back surface.

Figure 0004676430
Figure 0004676430

以上のことから、本発明に係るウェハ保管容器によれば、半導体ウェハをウェハ保管容器に収容し、該保管容器をラミネート袋で包装して袋内を不活性ガスで置換する際に、空気の流れが生じてウェハ保管容器内にパーティクルが進入しても半導体ウェハの表裏面にパーティクルが付着して汚染されるのを効果的に防止できるので、半導体ウェハの表面を清潔な状態で長期間保持することができる。したがって、半導体デバイスの製造業者は、ウェハ保管容器から半導体ウェハを取り出し、そのまま該半導体ウェハの表面にエピタキシャル成長を行うことも可能となるので、エピタキシャル成長の前工程としてウェハ表面の清浄化処理をする必要もなく、生産性を向上できる。   From the above, according to the wafer storage container according to the present invention, when storing the semiconductor wafer in the wafer storage container, packaging the storage container with a laminate bag, and replacing the inside of the bag with an inert gas, Even if a flow occurs and particles enter the wafer storage container, it can effectively prevent particles from adhering to and contaminating the front and back surfaces of the semiconductor wafer, so the surface of the semiconductor wafer can be kept clean for a long period of time. can do. Therefore, the semiconductor device manufacturer can take out the semiconductor wafer from the wafer storage container and perform epitaxial growth on the surface of the semiconductor wafer as it is. Therefore, it is necessary to clean the wafer surface as a pre-process of epitaxial growth. Productivity can be improved.

以上、本発明者によってなされた発明を実施形態に基づいて具体的に説明したが、本発明は上記実施形態に限定されるものではなく、その要旨を逸脱しない範囲で変更可能である。
例えば、上記実施形態では、ウェハ裏面保護シート14及びウェハ表面保護シート15をPTFE等のフッ素系樹脂フィルムで形成するようにしているが、その材質はこれに限定されず、ポリエチレン、ポリプロピレン、ポリエステル、又は塩化ビニル等のパーティクルが発生しにくい材質で形成するようにしてもよい。
As mentioned above, although the invention made by this inventor was concretely demonstrated based on embodiment, this invention is not limited to the said embodiment, It can change in the range which does not deviate from the summary.
For example, in the above embodiment, the wafer back surface protection sheet 14 and the wafer surface protection sheet 15 are formed of a fluorine resin film such as PTFE, but the material is not limited to this, and polyethylene, polypropylene, polyester, Alternatively, it may be formed of a material that does not easily generate particles such as vinyl chloride.

また、押さえ部材の形状は上記実施形態で説明したものに限定されない。例えば、図5に示すように、ウェハ裏面保護部材22のウェハと密着する面とは反対の面に板バネ等の弾性部材21を設けるようにし、押さえ部材としての機能を兼ねるウェハ裏面保護部材20としてもよい。   Further, the shape of the pressing member is not limited to that described in the above embodiment. For example, as shown in FIG. 5, an elastic member 21 such as a leaf spring is provided on the surface opposite to the surface of the wafer back surface protection member 22 that is in close contact with the wafer, and the wafer back surface protection member 20 that also functions as a pressing member. It is good.

また、収容される半導体ウェハの種類も制限されず、InP以外の半導体ウェハ用の保管容器としても適用できることはいうまでもない。   Further, the type of semiconductor wafer to be accommodated is not limited, and it goes without saying that it can be applied as a storage container for semiconductor wafers other than InP.

Claims (5)

周縁部にオリエンテーションフラットが設けられているエピタキシャル成長用ウェハを一枚ごとに収容するウェハ保管容器であって、ウェハの周縁部と当接してウェハを保持可能なドーム状凹部を有するウェハ収容部材と、該ウェハ収容部材と係合してウェハ収容部を密閉可能な蓋部材と、を有し、さらに、前記ドーム状凹部の開口部と略同一形状に成型され、前記ドーム状凹部に表面を向けて載置されたウェハの裏面全面と密着し、前記オリエンテーションフラットにより生じる前記ウェハ収容部材との隙間を覆うウェハ裏面保護部材と、前記ドーム状凹部の内壁面と略同一の形状を有し、前記ドーム状凹部と密着し、ウェハ周縁部と当接するウェハ表面保護部材と、を備えることを特徴とするウェハ保管容器。A wafer storage container for storing wafers for epitaxial growth each provided with an orientation flat at the periphery, a wafer storage member having a dome-shaped recess capable of holding the wafer in contact with the periphery of the wafer; A lid member that can be engaged with the wafer accommodating member to seal the wafer accommodating portion, and is further molded into substantially the same shape as the opening of the dome-shaped recess, with the surface facing the dome-shaped recess. A wafer back surface protection member that is in close contact with the entire back surface of the mounted wafer and covers a gap between the wafer holding member and the wafer housing member generated by the orientation flat; and an inner wall surface of the dome-shaped recess, and having substantially the same shape, And a wafer surface protection member that comes into close contact with the concave portion and contacts the peripheral edge of the wafer. 前記ウェハ裏面保護部材と前記蓋部材の間に配置され、前記ウェハ収容部材と前記蓋部材を係合したときに前記蓋部材に押されてウェハを前記ウェハ収容部に押圧する押さえ部材を備えることを特徴とする請求項1に記載のウェハ保管容器。  A pressing member that is disposed between the wafer back surface protection member and the lid member and is pressed by the lid member when the wafer housing member and the lid member are engaged to press the wafer against the wafer housing portion; The wafer storage container according to claim 1. 前記ウェハ裏面保護部材は、前記ウェハ収容部材と前記蓋部材を係合したときに前記蓋部材に押されてウェハを前記ウェハ収容部に押圧する押さえ部材としての機能を有することを特徴とする請求項1に記載のウェハ保管容器。  The said wafer back surface protection member has a function as a pressing member which is pressed by the said cover member and presses a wafer to the said wafer storage part when the said wafer storage member and the said cover member are engaged. Item 14. A wafer storage container according to Item 1. 前記ウェハ裏面保護部材は、ポリエチレン、ポリプロピレン、ポリエステル、又は塩化ビニル等のパーティクルが発生しにくい材質で形成されることを特徴とする請求項1から3の何れかに記載のウェハ保管容器。  4. The wafer storage container according to claim 1, wherein the wafer back surface protection member is formed of a material that hardly generates particles, such as polyethylene, polypropylene, polyester, or vinyl chloride. 5. 前記ウェハ裏面保護部材は、フッ素系樹脂フィルム等の放出ガス量の少ない材質で形成されることを特徴とする請求項1から4の何れかに記載のウェハ保管容器。  5. The wafer storage container according to claim 1, wherein the wafer back surface protection member is formed of a material having a small amount of released gas, such as a fluorine resin film.
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