JP4673579B2 - 表示装置 - Google Patents
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- JP4673579B2 JP4673579B2 JP2004162502A JP2004162502A JP4673579B2 JP 4673579 B2 JP4673579 B2 JP 4673579B2 JP 2004162502 A JP2004162502 A JP 2004162502A JP 2004162502 A JP2004162502 A JP 2004162502A JP 4673579 B2 JP4673579 B2 JP 4673579B2
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- 229910052751 metal Inorganic materials 0.000 claims description 144
- 239000002184 metal Substances 0.000 claims description 144
- 239000010408 film Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 75
- 229910044991 metal oxide Inorganic materials 0.000 claims description 27
- 150000004706 metal oxides Chemical class 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 20
- 239000010410 layer Substances 0.000 description 85
- 238000000034 method Methods 0.000 description 21
- 230000006866 deterioration Effects 0.000 description 19
- 238000005192 partition Methods 0.000 description 17
- 230000007797 corrosion Effects 0.000 description 15
- 238000005260 corrosion Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 239000003566 sealing material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 150000002894 organic compounds Chemical class 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000002788 crimping Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Description
5 陰極配線
10 隔壁
11 基板
21 陰極補助配線
22 絶縁膜
23 開口部
25 コンタクトホール
26 陽極補助配線
27 補助配線部
28 金属パターン
29 透明導電層パターン
40 端子部
41 金属パッド
42 切断部
51 対向基板
53 シール材
61 ACF
62 FPC
63 導電層
65 ACFの端部
66 カバー樹脂
100 有機EL素子基板
Claims (9)
- 外部配線と重ねあわされる端子部において、
基板上に、導電性の金属酸化物層が配置され、該金属酸化物層に積層されるように複数の金属パッドが配置され、
前記複数の金属パッドが、互いに分離されて前記金属酸化物層の反基板側表面に配置され、
前記金属酸化物層と前記複数の金属パッドとはそれぞれ導電接続され、
前記金属パッドの反基板面側において、前記外部配線が異方性導電膜を介して前記複数の金属パッドと導電接続されてなる表示装置。 - 前記金属酸化物層の長手方向に沿って、複数の金属パッドが配置されてなる請求項1に記載の表示装置。
- 前記金属酸化物層の幅方向に、複数の金属パッドが並置されてなる請求項1または2に記載の表示装置。
- 前記金属酸化物層の上に形成された金属層は、前記複数の金属パッドと該金属パッドから分離された補助配線部とを形成してなり、該補助配線部は、前記複数の金属パッドより表示領域側であって、前記外部配線の端部より表示領域側に設けられている請求項1、2または3のいずれか1項に記載の表示装置。
- 前記異方性導電膜の表示領域側の端部が、前記補助配線部より反表示領域側に位置している請求項4に記載の表示装置。
- 基板上に陽極配線と有機薄膜層と陰極配線とが順に積層された有機EL発光素子を有する表示装置において、
前記陽極配線及び前記陰極配線の夫々の基板端子側において該陽極配線及び陰極配線の夫々に接続された補助配線を有し、
前記補助配線は、基板上に配置された導電性の金属酸化物層と、その上に形成され、前記金属酸化物よりも抵抗の低い金属層とを有し、
前記補助配線の基板端部側において、前記金属層は互いに分離された複数の金属パッドとして形成されており、
前記複数の金属パッドと前記外部配線とが異方性導電膜を介して接続されてなる表示装置。 - 前記複数の金属パッドのうち少なくとも1個の金属パッドが、前記外部配線の表示領域側の端部よりも表示領域側に配置されてなる請求項6に記載の表示装置。
- 前記補助配線の金属酸化物層の上に形成された金属層は、金属パッドと分離された補助配線部を有し、該補助配線部は異方性導電膜の端部より表示領域側に設けられている請求項6または7に記載の表示装置。
- 前記金属酸化物層の長手方向に沿って、複数の金属パッドが配置されてなる請求項6、7または8のいずれか1項に記載の表示装置。
Priority Applications (1)
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---|---|---|---|
JP2004162502A JP4673579B2 (ja) | 2004-05-31 | 2004-05-31 | 表示装置 |
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JP2004162502A JP4673579B2 (ja) | 2004-05-31 | 2004-05-31 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005346982A JP2005346982A (ja) | 2005-12-15 |
JP4673579B2 true JP4673579B2 (ja) | 2011-04-20 |
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JP2004162502A Expired - Fee Related JP4673579B2 (ja) | 2004-05-31 | 2004-05-31 | 表示装置 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100911962B1 (ko) * | 2007-10-22 | 2009-08-13 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 |
KR101527971B1 (ko) * | 2008-07-21 | 2015-06-10 | 삼성디스플레이 주식회사 | 유기전계발광 표시 장치 |
WO2015125309A1 (ja) * | 2014-02-24 | 2015-08-27 | パイオニア株式会社 | 発光装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000252063A (ja) * | 1999-03-01 | 2000-09-14 | Toppan Printing Co Ltd | 色切換発光素子、色切換発光素子用基板及びカラー表示装置 |
JP2000294382A (ja) * | 1999-04-12 | 2000-10-20 | Casio Comput Co Ltd | 有機el装置 |
JP2002050468A (ja) * | 2000-08-04 | 2002-02-15 | Sony Corp | 平面表示素子 |
JP2002198186A (ja) * | 2000-10-17 | 2002-07-12 | Nec Corp | 有機エレクトロルミネセンス装置 |
JP2003257663A (ja) * | 2002-03-04 | 2003-09-12 | Rohm Co Ltd | 有機el表示パネルおよびその製造方法 |
WO2004040946A1 (ja) * | 2002-10-17 | 2004-05-13 | Asahi Glass Company, Limited | 積層体、配線付き基体、有機el表示素子、有機el表示素子の接続端子及びそれらの製造方法 |
-
2004
- 2004-05-31 JP JP2004162502A patent/JP4673579B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000252063A (ja) * | 1999-03-01 | 2000-09-14 | Toppan Printing Co Ltd | 色切換発光素子、色切換発光素子用基板及びカラー表示装置 |
JP2000294382A (ja) * | 1999-04-12 | 2000-10-20 | Casio Comput Co Ltd | 有機el装置 |
JP2002050468A (ja) * | 2000-08-04 | 2002-02-15 | Sony Corp | 平面表示素子 |
JP2002198186A (ja) * | 2000-10-17 | 2002-07-12 | Nec Corp | 有機エレクトロルミネセンス装置 |
JP2003257663A (ja) * | 2002-03-04 | 2003-09-12 | Rohm Co Ltd | 有機el表示パネルおよびその製造方法 |
WO2004040946A1 (ja) * | 2002-10-17 | 2004-05-13 | Asahi Glass Company, Limited | 積層体、配線付き基体、有機el表示素子、有機el表示素子の接続端子及びそれらの製造方法 |
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JP2005346982A (ja) | 2005-12-15 |
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