JP4671665B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4671665B2
JP4671665B2 JP2004327383A JP2004327383A JP4671665B2 JP 4671665 B2 JP4671665 B2 JP 4671665B2 JP 2004327383 A JP2004327383 A JP 2004327383A JP 2004327383 A JP2004327383 A JP 2004327383A JP 4671665 B2 JP4671665 B2 JP 4671665B2
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JP
Japan
Prior art keywords
semiconductor layer
electrode
layer
forming
substrate
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Expired - Fee Related
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JP2004327383A
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English (en)
Japanese (ja)
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JP2005165300A (ja
JP2005165300A5 (enExample
Inventor
舜平 山崎
慎志 前川
理 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004327383A priority Critical patent/JP4671665B2/ja
Publication of JP2005165300A publication Critical patent/JP2005165300A/ja
Publication of JP2005165300A5 publication Critical patent/JP2005165300A5/ja
Application granted granted Critical
Publication of JP4671665B2 publication Critical patent/JP4671665B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004327383A 2003-11-14 2004-11-11 表示装置の作製方法 Expired - Fee Related JP4671665B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004327383A JP4671665B2 (ja) 2003-11-14 2004-11-11 表示装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003385999 2003-11-14
JP2004327383A JP4671665B2 (ja) 2003-11-14 2004-11-11 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005165300A JP2005165300A (ja) 2005-06-23
JP2005165300A5 JP2005165300A5 (enExample) 2007-11-29
JP4671665B2 true JP4671665B2 (ja) 2011-04-20

Family

ID=34741814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004327383A Expired - Fee Related JP4671665B2 (ja) 2003-11-14 2004-11-11 表示装置の作製方法

Country Status (1)

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JP (1) JP4671665B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4565572B2 (ja) * 2006-09-05 2010-10-20 株式会社フューチャービジョン 液晶表示パネルの製造方法
JP4565573B2 (ja) * 2006-09-07 2010-10-20 株式会社フューチャービジョン 液晶表示パネルの製造方法
KR102195170B1 (ko) 2009-03-12 2020-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101730347B1 (ko) 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5683179B2 (ja) * 2009-09-24 2015-03-11 株式会社半導体エネルギー研究所 表示装置の作製方法
KR102317763B1 (ko) 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP5601822B2 (ja) * 2009-11-11 2014-10-08 三菱電機株式会社 薄膜トランジスタおよびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334465A (ja) * 1989-06-30 1991-02-14 Hitachi Ltd 薄膜トランジスタおよびその製造方法並びに液晶ディスプレイ装置
JPH04372934A (ja) * 1991-06-24 1992-12-25 Toshiba Corp 液晶表示装置用アレイ基板の製造方法
JP3571198B2 (ja) * 1997-10-30 2004-09-29 株式会社半導体エネルギー研究所 表示装置の作製方法
JPH11160734A (ja) * 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JP2003058077A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器

Also Published As

Publication number Publication date
JP2005165300A (ja) 2005-06-23

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