JP4656916B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4656916B2
JP4656916B2 JP2004326481A JP2004326481A JP4656916B2 JP 4656916 B2 JP4656916 B2 JP 4656916B2 JP 2004326481 A JP2004326481 A JP 2004326481A JP 2004326481 A JP2004326481 A JP 2004326481A JP 4656916 B2 JP4656916 B2 JP 4656916B2
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Japan
Prior art keywords
layer
gate electrode
gate
gate insulating
semiconductor
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Expired - Fee Related
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JP2004326481A
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Japanese (ja)
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JP2005167225A5 (enExample
JP2005167225A (ja
Inventor
理 中村
厳 藤井
文則 立石
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004326481A priority Critical patent/JP4656916B2/ja
Publication of JP2005167225A publication Critical patent/JP2005167225A/ja
Publication of JP2005167225A5 publication Critical patent/JP2005167225A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004326481A 2003-11-14 2004-11-10 発光装置の作製方法 Expired - Fee Related JP4656916B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004326481A JP4656916B2 (ja) 2003-11-14 2004-11-10 発光装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003386003 2003-11-14
JP2004326481A JP4656916B2 (ja) 2003-11-14 2004-11-10 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005167225A JP2005167225A (ja) 2005-06-23
JP2005167225A5 JP2005167225A5 (enExample) 2007-11-29
JP4656916B2 true JP4656916B2 (ja) 2011-03-23

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Family Applications (1)

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JP2004326481A Expired - Fee Related JP4656916B2 (ja) 2003-11-14 2004-11-10 発光装置の作製方法

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JP (1) JP4656916B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010064301A1 (ja) * 2008-12-02 2010-06-10 株式会社島津製作所 光マトリックスデバイスの製造方法
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6717700B2 (ja) * 2016-07-28 2020-07-01 株式会社ジャパンディスプレイ 表示装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701738B2 (ja) * 1994-05-17 1998-01-21 日本電気株式会社 有機薄膜ｅｌ素子
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP4042099B2 (ja) * 2002-04-22 2008-02-06 セイコーエプソン株式会社 デバイスの製造方法、デバイス及び電子機器
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器

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JP2005167225A (ja) 2005-06-23

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