JP4653768B2 - 窒化物系化合物半導体素子及びその製造方法 - Google Patents

窒化物系化合物半導体素子及びその製造方法 Download PDF

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Publication number
JP4653768B2
JP4653768B2 JP2007054063A JP2007054063A JP4653768B2 JP 4653768 B2 JP4653768 B2 JP 4653768B2 JP 2007054063 A JP2007054063 A JP 2007054063A JP 2007054063 A JP2007054063 A JP 2007054063A JP 4653768 B2 JP4653768 B2 JP 4653768B2
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growth
layer
substrate
nitride
compound semiconductor
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JP2007261936A (ja
JP2007261936A5 (enrdf_load_stackoverflow
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吉裕 上田
貴之 湯浅
淳 小河
有三 津田
正浩 荒木
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Sharp Corp
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Sharp Corp
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  • Chemical Vapour Deposition (AREA)
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JP2007054063A 1998-06-26 2007-03-05 窒化物系化合物半導体素子及びその製造方法 Expired - Lifetime JP4653768B2 (ja)

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JP2007054063A JP4653768B2 (ja) 1998-06-26 2007-03-05 窒化物系化合物半導体素子及びその製造方法

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JP17989998 1998-06-26
JP2007054063A JP4653768B2 (ja) 1998-06-26 2007-03-05 窒化物系化合物半導体素子及びその製造方法

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JP17929899A Division JP3976294B2 (ja) 1998-06-26 1999-06-25 窒化物系化合物半導体発光素子の製造方法

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JP2007261936A JP2007261936A (ja) 2007-10-11
JP2007261936A5 JP2007261936A5 (enrdf_load_stackoverflow) 2009-02-19
JP4653768B2 true JP4653768B2 (ja) 2011-03-16

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5099763B2 (ja) * 2007-12-18 2012-12-19 国立大学法人東北大学 基板製造方法およびｉｉｉ族窒化物半導体結晶
KR101137911B1 (ko) * 2007-12-18 2012-05-03 삼성코닝정밀소재 주식회사 질화갈륨 기판의 제조 방법
JP2009184836A (ja) * 2008-02-01 2009-08-20 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の結晶成長方法、発光デバイスの製造方法および電子デバイスの製造方法
JP4908453B2 (ja) 2008-04-25 2012-04-04 住友電気工業株式会社 窒化物半導体レーザを作製する方法
JP6649324B2 (ja) * 2017-08-09 2020-02-19 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光素子の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555631A (ja) * 1991-02-08 1993-03-05 Asahi Chem Ind Co Ltd 半導体積層薄膜およびその製造方法
US6083812A (en) * 1993-02-02 2000-07-04 Texas Instruments Incorporated Heteroepitaxy by large surface steps
JPH07201745A (ja) * 1993-12-28 1995-08-04 Hitachi Cable Ltd 半導体ウェハ及びその製造方法
JP3443185B2 (ja) * 1994-10-19 2003-09-02 三洋電機株式会社 発光素子
JP2002084045A (ja) * 1997-06-30 2002-03-22 Nichia Chem Ind Ltd 窒化物半導体素子
JPH11233391A (ja) * 1998-02-12 1999-08-27 Nippon Telegr & Teleph Corp <Ntt> 結晶基板とそれを用いた半導体装置およびその製法

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