JP2007261936A5 - - Google Patents

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Publication number
JP2007261936A5
JP2007261936A5 JP2007054063A JP2007054063A JP2007261936A5 JP 2007261936 A5 JP2007261936 A5 JP 2007261936A5 JP 2007054063 A JP2007054063 A JP 2007054063A JP 2007054063 A JP2007054063 A JP 2007054063A JP 2007261936 A5 JP2007261936 A5 JP 2007261936A5
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JP
Japan
Prior art keywords
compound semiconductor
nitride
sapphire substrate
emitting device
less
Prior art date
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Application number
JP2007054063A
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English (en)
Japanese (ja)
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JP4653768B2 (ja
JP2007261936A (ja
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Priority to JP2007054063A priority Critical patent/JP4653768B2/ja
Priority claimed from JP2007054063A external-priority patent/JP4653768B2/ja
Publication of JP2007261936A publication Critical patent/JP2007261936A/ja
Publication of JP2007261936A5 publication Critical patent/JP2007261936A5/ja
Application granted granted Critical
Publication of JP4653768B2 publication Critical patent/JP4653768B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007054063A 1998-06-26 2007-03-05 窒化物系化合物半導体素子及びその製造方法 Expired - Lifetime JP4653768B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007054063A JP4653768B2 (ja) 1998-06-26 2007-03-05 窒化物系化合物半導体素子及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17989998 1998-06-26
JP2007054063A JP4653768B2 (ja) 1998-06-26 2007-03-05 窒化物系化合物半導体素子及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP17929899A Division JP3976294B2 (ja) 1998-06-26 1999-06-25 窒化物系化合物半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2007261936A JP2007261936A (ja) 2007-10-11
JP2007261936A5 true JP2007261936A5 (enrdf_load_stackoverflow) 2009-02-19
JP4653768B2 JP4653768B2 (ja) 2011-03-16

Family

ID=38635291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007054063A Expired - Lifetime JP4653768B2 (ja) 1998-06-26 2007-03-05 窒化物系化合物半導体素子及びその製造方法

Country Status (1)

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JP (1) JP4653768B2 (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5099763B2 (ja) * 2007-12-18 2012-12-19 国立大学法人東北大学 基板製造方法およびｉｉｉ族窒化物半導体結晶
KR101137911B1 (ko) * 2007-12-18 2012-05-03 삼성코닝정밀소재 주식회사 질화갈륨 기판의 제조 방법
JP2009184836A (ja) * 2008-02-01 2009-08-20 Sumitomo Electric Ind Ltd Ｉｉｉ−ｖ族化合物半導体の結晶成長方法、発光デバイスの製造方法および電子デバイスの製造方法
JP4908453B2 (ja) 2008-04-25 2012-04-04 住友電気工業株式会社 窒化物半導体レーザを作製する方法
JP6649324B2 (ja) * 2017-08-09 2020-02-19 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光素子の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555631A (ja) * 1991-02-08 1993-03-05 Asahi Chem Ind Co Ltd 半導体積層薄膜およびその製造方法
US6083812A (en) * 1993-02-02 2000-07-04 Texas Instruments Incorporated Heteroepitaxy by large surface steps
JPH07201745A (ja) * 1993-12-28 1995-08-04 Hitachi Cable Ltd 半導体ウェハ及びその製造方法
JP3443185B2 (ja) * 1994-10-19 2003-09-02 三洋電機株式会社 発光素子
JP2002084045A (ja) * 1997-06-30 2002-03-22 Nichia Chem Ind Ltd 窒化物半導体素子
JPH11233391A (ja) * 1998-02-12 1999-08-27 Nippon Telegr & Teleph Corp <Ntt> 結晶基板とそれを用いた半導体装置およびその製法

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