JP4650639B2 - 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 - Google Patents

感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 Download PDF

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JP4650639B2
JP4650639B2 JP2006519375A JP2006519375A JP4650639B2 JP 4650639 B2 JP4650639 B2 JP 4650639B2 JP 2006519375 A JP2006519375 A JP 2006519375A JP 2006519375 A JP2006519375 A JP 2006519375A JP 4650639 B2 JP4650639 B2 JP 4650639B2
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Japan
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radiation
weight
resin composition
sensitive resin
microlens
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Japanese (ja)
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JPWO2005101124A1 (ja
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徹 梶田
貴樹 蓑輪
浩司 志保
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JSR Corp
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JSR Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymerisation Methods In General (AREA)
JP2006519375A 2004-04-08 2005-02-18 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法 Expired - Fee Related JP4650639B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004114525 2004-04-08
JP2004114525 2004-04-08
PCT/JP2005/003071 WO2005101124A1 (ja) 2004-04-08 2005-02-18 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法

Publications (2)

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JPWO2005101124A1 JPWO2005101124A1 (ja) 2008-03-06
JP4650639B2 true JP4650639B2 (ja) 2011-03-16

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ID=35150153

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JP2006519375A Expired - Fee Related JP4650639B2 (ja) 2004-04-08 2005-02-18 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法

Country Status (5)

Country Link
JP (1) JP4650639B2 (enExample)
KR (1) KR101057850B1 (enExample)
CN (1) CN1898605B (enExample)
TW (1) TW200602806A (enExample)
WO (1) WO2005101124A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7696292B2 (en) 2003-09-22 2010-04-13 Commonwealth Scientific And Industrial Research Organisation Low-polydispersity photoimageable acrylic polymers, photoresists and processes for microlithography
KR101250733B1 (ko) * 2005-03-15 2013-04-03 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 그로부터 형성된 돌기 및 스페이서, 및 이들을 구비하는 액정 표시 소자
JP4654867B2 (ja) * 2005-10-07 2011-03-23 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
JP4656316B2 (ja) * 2005-12-22 2011-03-23 Ｊｓｒ株式会社 層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
JP5177404B2 (ja) * 2007-07-30 2013-04-03 Ｊｓｒ株式会社 感放射線性樹脂組成物、ならびに層間絶縁膜およびマイクロレンズとそれらの製造方法
EP2277930A1 (en) * 2009-06-30 2011-01-26 Cytec Surface Specialties, S.A. Radiation curable compositions
KR102059430B1 (ko) * 2011-08-09 2019-12-26 제이에스알 가부시끼가이샤 마이크로렌즈 어레이 및 입체 화상 표시 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000327877A (ja) * 1999-05-17 2000-11-28 Jsr Corp 感放射線性樹脂組成物、その層間絶縁膜およびマイクロレンズへの使用、並びに層間絶縁膜およびマイクロレンズ
JP2000347397A (ja) * 1999-06-04 2000-12-15 Jsr Corp 感放射線性樹脂組成物およびその層間絶縁膜への使用
WO2003017001A1 (en) * 2001-08-20 2003-02-27 Dongjin Semichem Co., Ltd. Photosensitive resin composition for photoresist
WO2003036388A1 (en) * 2001-10-24 2003-05-01 Dongjin Semichem Co., Ltd. Photosnesitive resin composition comprising quinonediazide sulfate ester compound
JP2003140338A (ja) * 2001-10-31 2003-05-14 Nippon Steel Chem Co Ltd ポジ型感光性組成物
JP2003344998A (ja) * 2002-05-22 2003-12-03 Fuji Photo Film Co Ltd マゼンタ用感光性着色組成物、カラーフィルターの製造方法、及びカラーフィルター

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1255467C (zh) * 2001-03-31 2006-05-10 Adms技术株式会社 液晶显示元件的柱型隔垫用保护膜组合物
JP2003041224A (ja) * 2001-07-31 2003-02-13 Kanegafuchi Chem Ind Co Ltd 粘着剤組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000327877A (ja) * 1999-05-17 2000-11-28 Jsr Corp 感放射線性樹脂組成物、その層間絶縁膜およびマイクロレンズへの使用、並びに層間絶縁膜およびマイクロレンズ
JP2000347397A (ja) * 1999-06-04 2000-12-15 Jsr Corp 感放射線性樹脂組成物およびその層間絶縁膜への使用
WO2003017001A1 (en) * 2001-08-20 2003-02-27 Dongjin Semichem Co., Ltd. Photosensitive resin composition for photoresist
WO2003036388A1 (en) * 2001-10-24 2003-05-01 Dongjin Semichem Co., Ltd. Photosnesitive resin composition comprising quinonediazide sulfate ester compound
JP2003140338A (ja) * 2001-10-31 2003-05-14 Nippon Steel Chem Co Ltd ポジ型感光性組成物
JP2003344998A (ja) * 2002-05-22 2003-12-03 Fuji Photo Film Co Ltd マゼンタ用感光性着色組成物、カラーフィルターの製造方法、及びカラーフィルター

Also Published As

Publication number Publication date
TWI361951B (enExample) 2012-04-11
CN1898605A (zh) 2007-01-17
KR101057850B1 (ko) 2011-08-19
JPWO2005101124A1 (ja) 2008-03-06
KR20070020436A (ko) 2007-02-21
WO2005101124A1 (ja) 2005-10-27
CN1898605B (zh) 2010-08-18
TW200602806A (en) 2006-01-16

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