JP4638867B2 - 放電生成プラズマｅｕｖ光源 - Google Patents

放電生成プラズマｅｕｖ光源 Download PDF

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Publication number
JP4638867B2
JP4638867B2 JP2006509069A JP2006509069A JP4638867B2 JP 4638867 B2 JP4638867 B2 JP 4638867B2 JP 2006509069 A JP2006509069 A JP 2006509069A JP 2006509069 A JP2006509069 A JP 2006509069A JP 4638867 B2 JP4638867 B2 JP 4638867B2
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Japan
Prior art keywords
electrode
debris
rotational axis
discharge
source
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Expired - Fee Related
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JP2006509069A
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English (en)
Japanese (ja)
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JP2006520107A5 (zh
JP2006520107A (ja
Inventor
ウィリアム エヌ パートロ
ゲリー エム ブルーメンストック
ノーバート バウアリング
ケント エイ ブルッツォーネ
デニス ダブリュー コブ
ティモシー エス ダイアー
ジョン ダンロップ
イゴー ヴィー フォーメンコフ
ジェイムズ クリストファー ハイシャム
ロジャー アイ オリヴァー
フレデリック エイ パレンシャット
シャオジャン ジェイ パン
カーティス エル レティッグ
ロドニー エス シモンズ
ジョン ウォーカー
カイル アール ウェブ
トーマス ホフマン
オリー コーディキン
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サイマー インコーポレイテッド
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Priority claimed from US10/384,967 external-priority patent/US6904073B2/en
Priority claimed from US10/409,254 external-priority patent/US6972421B2/en
Priority claimed from US10/742,233 external-priority patent/US7180081B2/en
Application filed by サイマー インコーポレイテッド filed Critical サイマー インコーポレイテッド
Publication of JP2006520107A publication Critical patent/JP2006520107A/ja
Publication of JP2006520107A5 publication Critical patent/JP2006520107A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/04—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using magnetic fields substantially generated by the discharge in the plasma
    • H05H1/06—Longitudinal pinch devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Nanotechnology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
JP2006509069A 2003-03-08 2004-03-03 放電生成プラズマｅｕｖ光源 Expired - Fee Related JP4638867B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/384,967 US6904073B2 (en) 2001-01-29 2003-03-08 High power deep ultraviolet laser with long life optics
US10/409,254 US6972421B2 (en) 2000-06-09 2003-04-08 Extreme ultraviolet light source
US10/742,233 US7180081B2 (en) 2000-06-09 2003-12-18 Discharge produced plasma EUV light source
PCT/US2004/006551 WO2004081503A2 (en) 2003-03-08 2004-03-03 Discharge produced plasma euv light source

Publications (3)

Publication Number Publication Date
JP2006520107A JP2006520107A (ja) 2006-08-31
JP2006520107A5 JP2006520107A5 (zh) 2007-06-14
JP4638867B2 true JP4638867B2 (ja) 2011-02-23

Family

ID=46205121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006509069A Expired - Fee Related JP4638867B2 (ja) 2003-03-08 2004-03-03 放電生成プラズマｅｕｖ光源

Country Status (4)

Country Link
EP (1) EP1602116A4 (zh)
JP (1) JP4638867B2 (zh)
TW (1) TWI275325B (zh)
WO (1) WO2004081503A2 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7410265B2 (en) * 2000-09-13 2008-08-12 Carl Zeiss Smt Ag Focusing-device for the radiation from a light source
US7439530B2 (en) * 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US7217941B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source
US7109503B1 (en) * 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法
DE102005015274B4 (de) * 2005-03-31 2012-02-23 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung kurzwelliger Strahlung
US7141806B1 (en) * 2005-06-27 2006-11-28 Cymer, Inc. EUV light source collector erosion mitigation
US7394083B2 (en) * 2005-07-08 2008-07-01 Cymer, Inc. Systems and methods for EUV light source metrology
US20070115443A1 (en) * 2005-11-23 2007-05-24 Asml Netherlands B.V. Radiation system and lithographic apparatus
US7465943B2 (en) * 2005-12-08 2008-12-16 Asml Netherlands B.V. Controlling the flow through the collector during cleaning
US7960701B2 (en) 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
NL1036768A1 (nl) * 2008-04-29 2009-10-30 Asml Netherlands Bv Radiation source.
JP5252586B2 (ja) * 2009-04-15 2013-07-31 ウシオ電機株式会社 レーザー駆動光源
US8153994B2 (en) * 2009-12-02 2012-04-10 Media Lario S.R.L. Cooling systems and methods for grazing incidence EUV lightography collectors
US8276866B2 (en) * 2010-03-08 2012-10-02 Media Lario, S.R.L. Adjustable clips for grazing-incidence collectors
US10437162B2 (en) * 2017-09-21 2019-10-08 Asml Netherlands B.V. Methods and apparatuses for protecting a seal in a pressure vessel of a photolithography system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115821A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd Ｘ線露光装置
JP2001144002A (ja) * 1999-11-16 2001-05-25 Canon Inc 環境チャンバおよび半導体製造装置
JP2002504746A (ja) * 1998-02-19 2002-02-12 スティクティング・ヴーア・デ・テクニシェ・ウェッテンシャペン 放射源と放射源からの放射を処理する処理機構とを含む遠紫外線リソグラフィに適した装置、ならびに放射源から放射された望ましくない原子および微小粒子を抑制するためのフィルタ
WO2002054153A1 (en) * 2001-01-03 2002-07-11 Koninklijke Philips Electronics N.V. Illumination system with vacuum chamber wall having transparent structure
US6567499B2 (en) * 2001-06-07 2003-05-20 Plex Llc Star pinch X-ray and extreme ultraviolet photon source
JP2005005666A (ja) * 2002-11-22 2005-01-06 Asml Netherlands Bv 複数の抑制メッシュを備えたリトグラフ投影装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
DE10219173A1 (de) * 2002-04-30 2003-11-20 Philips Intellectual Property Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115821A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd Ｘ線露光装置
JP2002504746A (ja) * 1998-02-19 2002-02-12 スティクティング・ヴーア・デ・テクニシェ・ウェッテンシャペン 放射源と放射源からの放射を処理する処理機構とを含む遠紫外線リソグラフィに適した装置、ならびに放射源から放射された望ましくない原子および微小粒子を抑制するためのフィルタ
JP2001144002A (ja) * 1999-11-16 2001-05-25 Canon Inc 環境チャンバおよび半導体製造装置
WO2002054153A1 (en) * 2001-01-03 2002-07-11 Koninklijke Philips Electronics N.V. Illumination system with vacuum chamber wall having transparent structure
US6567499B2 (en) * 2001-06-07 2003-05-20 Plex Llc Star pinch X-ray and extreme ultraviolet photon source
JP2005005666A (ja) * 2002-11-22 2005-01-06 Asml Netherlands Bv 複数の抑制メッシュを備えたリトグラフ投影装置

Also Published As

Publication number Publication date
WO2004081503A2 (en) 2004-09-23
TWI275325B (en) 2007-03-01
WO2004081503A3 (en) 2005-10-06
JP2006520107A (ja) 2006-08-31
TW200425802A (en) 2004-11-16
EP1602116A2 (en) 2005-12-07
EP1602116A4 (en) 2010-03-31

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