TW200425802A - Discharge produced plasma EUV light source - Google Patents

Discharge produced plasma EUV light source Download PDF

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TW200425802A
TW200425802A TW93104595A TW93104595A TW200425802A TW 200425802 A TW200425802 A TW 200425802A TW 93104595 A TW93104595 A TW 93104595A TW 93104595 A TW93104595 A TW 93104595A TW 200425802 A TW200425802 A TW 200425802A
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Taiwan
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patent application
item
scope
adjacent
electrode
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TW93104595A
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Chinese (zh)
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TWI275325B (en
Inventor
William N Partlo
Gerry M Blumenstock
Norbert Bowering
Kent A Bruzzone
Dennis W Cobb
Timothy S Dyer
John Dunlop
Igor V Fomenkov
James Christopher Hysham
I Roger Oliver
Frederick Palenschat
Xiaojiang J Pan
Curtis L Rettig
Rodney D Simmons
John Walker
R Kyle Webb
Thomas Hofmann
Oleh Khodykin
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Cymer Inc
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Priority claimed from US10/384,967 external-priority patent/US6904073B2/en
Priority claimed from US10/409,254 external-priority patent/US6972421B2/en
Priority claimed from US10/742,233 external-priority patent/US7180081B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of TW200425802A publication Critical patent/TW200425802A/en
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Publication of TWI275325B publication Critical patent/TWI275325B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70166Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/7015Details of optical elements
    • G03F7/70175Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22Gases
    • H01S3/223Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/003X-ray radiation generated from plasma being produced from a liquid or gas
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/02Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/04Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using magnetic fields substantially generated by the discharge in the plasma
    • H05H1/06Longitudinal pinch devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/003X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)

Abstract

An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis of rotation and an ellipse in another. The electrodes may be supplied with a discharge pulse shaped to produce a modest current during the axial run out phase of the discharge and a peak occurring during the radial compression phase of the discharge. The light source may comprise a turbomolecular pump having an inlet connected to the generation chamber and operable to preferentially pump more of the source gas than the buffer gas from the chamber. The source may comprise a tuned electrically conductive electrode comprising: a differentially doped ceramic material doped in a first region to at least select electrical conductivity and in a second region at least to select thermal conductivity. The first region may be at or near the outer surface of the electrode structure and the ceramic material may be SiC or alumina and the dopant is BN or a metal oxide, including SiO or TiO2. The source may comprise a moveable electrode assembly mount operative to move the electrode assembly mount from a replacement position to an operating position, with the moveable mount on a bellows. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members. The shells may be biased with a voltage. The debris shield may be fabricated using off focus laser radiation. The anode may be cooled with a hollow interior defining two coolant passages or porous metal defining the passages. The debris shield may be formed of pluralities of large, intermediate and small fins attached either to a mounting ring or hub or to each other with interlocking tabs that provide uniform separation and strengthening and do not block any significant amount of light.

Description

200425802 玖、發明說明: 【發明所屬^^技術領域;j 發明領域 本發明有關利用電極之間放電形成發光電漿之EUV及 5 軟X射線光源。 t先前技術3 相關申請案 此申請案係為下列各案的部分接續案,身為2003年3 月8日提交的美國編號10/384,967號的部分接續案之2003年 10 4月8日提交的美國編號10/409,254號、2002年7月3日提交的 美國編號10/189,824號、2002年4月10日提交的美國編號 10/120,655號、現為美國專利案6,586,757號之2001年6月6 日提交的美國編號09/875,719號、及2001年6月6日提交的美 國編號09/875,721號、2000年10月16日提交的美國編號 15 09/690,084號;並請求2002年10月31日提交的專利申請案編 號60/422,808號及2002年10月18日提交的60/419,805號之利 益;上述各案皆以引用方式併入本文中。 發明背景 已經熟知自譬如藉由將一高電壓施加橫越電極產生放 20 電所生成之電漿來產生遠紫外線(“EUV”),譬如在一氣體媒 體譬如包含一諸如氙等主動材料中產生處於EUV波長的 光,譬如13.5奈米的氙(亦稱為軟X射線)。此等EUV光源常 稱為放電產生的電漿(“DPP”)EUV(軟X射線)光源。 1998年6月9日發證予帕特羅(Partlo)的美國專利案 7 200425802 5,763,930號、2000年5月16日發證予帕特羅(Partlo)等人的美 國專利案6,064,072號、2002年9月17日發證予帕特羅(partl〇) 等人的美國專利案6,452,199號、2003年4月1日發證予帕特 羅(Partlo)的美國專利案6,541,786號、及2003年7月1日發證 5 予摩林恰克(Melnychuck)等人的美國專利案6,586,757號,以 及審查中的美國專利申請案09/752,818號、2002年4月10曰 提交名稱為“用於遠紫外線及X光之脈衝功率系統,,之 10/120,655號,發明人奈思(Ness)等人,2002年11月7日公開, 公告號碼US/2002-0163313-A1、2002年7月3日提交名稱為 1〇 “具有改良的脈衝功率系統之電漿聚焦光源,,之1〇/189,824 號,發明人摩林恰克(Melnychuck)等人,2003年1月9日公開, 公告號碼US/2003-0006383-A1、2003年3月8日提交名稱為 “具有長壽命光學裝置之高功率深紫外線雷射,,之 10/384,967號,發明人亞格(Yager)等人、2003年4月8日提交 15名稱為“遠紫外光源,,之10/409,254號,發明人摩林恰克 (Melnychuck)等人;上述各案皆論及特別使用dpp來生成用 於產生光的電漿之EUV光源的型態,上述各案的揭示以引 用方式併入本文中。 目前的EUV收集光學裝置係譬如在部分常見環境溫度 20 下譬如藉由數個具有共同焦點的嵌套狀殼套所組成。一般 而言,這些殼套譬如由鎳形成,且強調具有譬如近似1公厘 厚之相對較薄的壁。EUV光產生的結果係為接近Euv源點 之組件上的高熱負荷。在光學組件的案例中,這些熱負荷 s如會杻曲臨界表面使焦點移位。 8 200425802 一種很有效率之發送EUV光的方法譬如係經由“入射 的掠射角”反射器。一般而言,嵌套狀收集器殼套譬如強調 具有至少兩個不同的反射表面,譬如扁平或彎曲狀表面, 藉以能夠自放電產生的電漿以大角度發射光線使之以較小 5 的角度亦即數值孔徑被收集及輸送至一中間焦點或焦平 面。 避免扭曲及維持焦平面或焦點係為可採用部分改良之 EUV光源設計的一種型態。 電極壽命是另一項需要注意的EUV光源議題。具有 10 10%輸出劣化之100M擊發的電極壽命據信係為DPP EUV系 統的最低要求。目前的技術對於上述左右的劣化只允許約 小於30M左右的擊發。藉由一 DPP產生的匝夾狀電漿之EUV 發光的副產品係為緊鄰匝夾形態之結構及元件上的高熱負 荷。這會對於效能及組件壽命造成數種有害影響,譬如在 15 中央電極的案例中,熱負荷可能很嚴重以使電極外表面譬 如經由材料蒸發而過度侵蝕。由於包括了對於電漿形態的 影響及無法承受在電極結構内部流通的冷卻水壓力等數項 原因,因為侵蝕作用的緣故,最終必須更換這些電極。 此時,EUV電極的壽命係與微影業所引述的壽命數字 20 相差了一個數量級。因此,更換成本及電極更換期間的機 具停工構成了 DPP EUV光源之“擁有成本(cost of ownership)”的大部分。 已知將SiC-BN使用在國防工業作為裝甲鍍覆之用。摻 雜有BN的SiC對於譬如含有BN的塗覆纖維等SiC-石墨系統 9 200425802 很常見。TiW已經使用在半導體業的接觸部上且身為一種 常見的機械加工材料,譬如用於pVD乾材。 一 5 DPPEUV光源的另-重要考量在於:需要將由於放電 產生的電漿讀錢_在諸如收錢光學元料系統光 學裝置上所造紅電極雜屑的有害影料簡著地降低。 DPP請光_另—4要型態在於:需要最有效率地 ❹注人·裝㈣之能量如對於給定的能量輸入達成 取大的光輸出。需要極高能量的光輸出,而且譬如由於定 10 =及散熱需求故在諸如將極高能脈衝以所需要的重覆速率 輸送至放電電極之能力方面具有限制。 【發明内容】 發明概要 15 體自離開電_•產生一:屬=:採用一金屬齒素氣 m胸-Γ曰士 金屬齒化物之雜屑消減裝置。 ,、有-可包含複數個曲線型遮 器,其中複數個曲線型遮蔽構件具 = 通道所連狀内及外表面,# 、“、、點的先 空間呈現m且古* 構件可與其間的開放 工間呈現父替且可具有在—旋轉轴 一旋轉軸線巾形成-橢圓形 / ―®形且在另 20 電脈衝且其闕定型以在放 可對於電極供應一放 =電流並在放電的徑向壓縮階段期===產:; 掉作以…… 〜、有一連接至產生室之入口並可 缸作以攸至優先泵送比起 包含-經調整的導電電& 多之源氣體。此源可 的以電極,此導電電極包含..~經差異㈣ 10 200425802 雜的陶瓷材料,其摻雜入一第一區中以至少選擇導電性以 及一第二區中以至少選擇導熱性。第一區可位於或接近於 電極結構的外表面,且陶瓷材料可為SiC或氧化鋁,而摻雜 物為BN或一金屬氧化物包括SiO或Ti〇2。源部可包含一可 5 移式電極總成安裝座且可操作以將電極總成安裝座從一更 換位置移至一操作位置,其中可移式安裝座係位於一伸縮 節上。此源部可具有一溫度控制機構,其可操作性連接至 收集器且可操作用以調卽各別殼套構件的溫度以維持一與 溫度有關的幾何結構而使得來自各別殼套構件之入射反射 10的掠射角達到最佳化,或具有一用以定位殼套構件之機械 定位器。可以一電壓使殼套偏壓。可利用偏離焦點的雷^ 輕射來製造雜屬遮蔽器。可藉由一界定有兩個冷卻劑通道 之中空内部或界定有通道之多孔金屬來冷卻陽極。可利^ 提供均勻分離與加強且不會阻絕顯著光量之互鎖籤片,从 15由附減安裝環或轂或附接至彼此之複數個大、中曰 型·籍片來形成雜屬遮蔽器。 ’、 圖式簡單說明 第1圖顯示''放電產生的電聚EUV(軟X射線)光源 系統的-實施例之主要組件的示意圖; 20 第2圖顯示’用於產生DPP EUV光之電極的_實 之示意圖; 第3圖顯示一用於EUV光源之譬如適可自一光產 裝收集一發射圓錐中的光之收集器系統的一實施例;電 第4圖顯示示意第3圖所示的一收集器的實施例之入射 11 ^^5802 操作的掠射角之橫剖視圖; 第5圖顯不本發明的一實施例,其包括根據本發明的一 實施例之一電極更換系統; 第6圖顯示第4圖的實施例之近寫圖; 5 第7圖顯示第5及6圖的實施例,其中具有一適於更換電 極之閘閥密封機構; 第8圖顯示根據本發明的一實施例之一用來製造可有 效用於DPP之電極中的材料之程序的示意圖; 第9圖顯示根據本發明的一實施例之一中心電極(陽極) 10 的橫剖視圖; 第10圖顯不根據本發明的一實施例之一電極總成的立 體剖切圖; 第11圖顯不第10圖所示的電極總成的一部分及第9圖 所示的中心電極(陽極)之近寫立體剖切圖; 15 第12圖顯示第10及11圖所示的電極總成之俯視圖; 第12a至C圖顯示第10至12圖的電極總成之橫剖視圖, 其中剖面沿著第12圖的線A-A、B-B及C-C所取; 第13圖顯示第1〇至Ik圖的電極總成之橫剖視圖,其中 包括一中心電極(陽極)總成; 20 第14圖顯示第10至13圖的總成之—冷㈣分,其中顯 示根據本發明的一實施例之冷卻通路; 彭5圖顯示根據本發明的-實施例雜屑遮蔽器的 立體圖; 第16圖顯示根據本發明的-實施例之〜用於製造雜屑 12 200425802 遮蔽器的程序之示意圖; 第17A至Η圖顯示根據本發明的一實施例之另一雜屑 遮蔽器;及 第18 Α及18 Β圖顯示根據本發明的一實施例的型態產 5生一電漿匝夹之模擬模型。 【實方式;J 較佳實施例之詳細說明 現在參照第1圖,顯示根據本發明的一實施例之一放電 產生的電漿(“DPP,,)EUV及軟X射線光源20。EUV光源可譬 10 如包括一殼體22,其界定一放電室24。譬如可將一對電極 26譬如附接經過室22的一個壁中之一密封開口,該對電極 26譬如可包括概呈圓柱形的電極,譬如包括一譬如可能身 為陰極之外電極28,及一譬如可身為陽極之内電極30,或 反之亦然,但本揭示將採用前述方式。内電極30可如第2圖 15 所示譬如藉由一絕緣體70與外電極28絕緣,並當譬如第7圖 所示從一固態脈衝功率模組139供應一很高電壓及一很快 升高時間的電能脈衝時,其譬如將經由一譬如含有氦等離 子化氣體在電極28、30之間共同產生一放電。譬如第1〇至 12圖所示,可藉由一預離子化器2〇6的啟動來利於此放電。 20此放電譬如可初步形成一自接近預離子化器206及絕緣體 70的内電極概呈徑向延伸之磁場,如第2圖的82所示,然後 當沿著内電極(陽極)30的外表面208發送時更為軸向延伸, 如第2圖的84所示意顯示。軸向延伸的磁場料係形成一由包 含一譬如氙等源材料的磁場84簡短地限定之高密度電漿匝 13 丈32 ’源材料譬如係經由一源輸送管60輸送至匝炎部位且 譬如輸送至中心電極30梢部之一中心電極(陽極)梢凹陷34 内。 自電漿匝夾所發射的光在穿過譬如一譬如可困住可能 音如會損傷收集器40中的反射表面之諸如在光產生程序期 間自電漿發射的離子化氙粒子等雜屑或諸如來自電極的鶴 雜屑等電極材料的雜屑遮蔽器36之後可由譬如一入射收集 器40的掠射角予以收集。收集器4〇所聚焦之光亦譬如可穿 過一頻譜純度濾器,其中收集器40所聚焦的光譬如係可能 10身為對於-稱為中間焦點42的焦點或焦平面之入射反射的 掠射角所造成EUV光的單一彎曲表面反射射線,頻譜純度 濾裔可刼作以濾除譬如具有13·5奈米與13·5奈米左右較窄 頻見除外之大致所有的光。 ι 本發明的一實施例之一型態係包含可補償收集器4 〇上 15的熱負荷,藉以產生輸送至中間焦點42更一致的高Ευν能 量。 現在參照第3及4圖,顯示根據本發明的一實施例之一 收集器40的立體剖切圖,亦顯示根據本發明的_實施例之 收集器40的—範例之示意圖。如第4圖所示,一條用於追蹤 部分示範性限制射線之射線係具有一限制射線ι〇4及一限 射線 且排列成為可在入射的掠射角將限制射線 1〇4 104自σ卩分1Q2a反射至部分1Q2b,其中收集器4〇的各 殼套102具有一第一殼套部分1〇2a及一第二殼套部分 l〇2b,且各部分1〇2a、_可為扁平或彎曲狀。在部分川沘 14 200425802 上,入射反射的掠射角將射線104、104,中的光往中間焦點 42聚焦。對於此應用來說,可將光加寬且需要穿過一某種 濾器,譬如第1圖所示的頻譜純度濾器50。如第4圖所示, 只存在極小的體積亦即實體空間來支持各別殼套102及包 5 括其組件部分l〇2a、l〇2b的厚度。如此將會阻礙相鄰的譬 如下一個外殼套之傳輸。藉由修改殼套的幾何結構,可讓 更厚的壁增大各別的掠射角,故降低了設計的傳輸效率。 譬如,依據所發射光的波長λ及反射表面材料而定,部分 光射線104”及104’”並不進入收集器4〇的進入圓錐或在一適 10 當的入射掠射角(通常小於約2。)時不進入,因此不被收集器 所收集。 如第3圖所示,收集器40可由複數個嵌套狀殼套102所 構成,各殼套102具有比其另一外側殼套更小的直徑。殼套 可由複數個部分構成,譬如兩部分l〇2a及102b,其中部分 l〇2a最接近匝夾部位32。譬如可將各殼套1〇2部分l〇2a定出 角度,以反射入射在收集器40殼套102上之電漿產生的光之 入射圓錐的一部分中之光射線並將該光反射至該部分 102b。在部分102b上,可發生進一步的入射反射掠射角, 其譬如可以一聚焦在中間焦點42的角度來反射入射的EUV 20 光。 殼套102譬如可安裝至一收集器轂90,收集器轂9〇譬如 可能具有自轂90沿著收集器40軸向長度延伸之收集器轂延 伸部92。複數個譬如四個徑向支架94亦附接至較90。可馨 如利用溶接或硬銲將各殼套1〇2連接至支架94。可藉由一經 15 200425802 向收集器減阻物100來強化收集器4〇的結構及殼套1〇2對於 支架94之安裝方式。 根據本發明的一實施例之一型態,可獲得收集器40可 月b預期看到的最大熱負荷。收集器4〇的幾何結構及其組成 5殼套1〇2與其部分102a、l〇2b的生成方式可使得譬如只在此 、又達成S如焦點專所需要性能之一型態。亦即,在部分 已知的預選定溫度下,將具有一已知之收集器元件的幾何 結構’導致—所需要的操作參數,譬如特定的λ等中間焦 點42之焦點選擇。加熱元件(未圖示)可附接至收集器4〇的各 10別殼套102或譬如附接至轂90及/或其延伸部92,且譬如不 論具有原本會導致收集器4〇溫度隨時間而改變之何種任務 循環或重覆速率皆可用來維持此理想的幾何結構。此變動 的溫度譬如會使殼套部分102a、1〇2b撓曲及/或修改其彼此 的位置關係。根據本發明的一實施例之另一型態,可利用 15冷卻來維持所需要的固定溫度,譬如其中包括帕耳帖冷卻 器(未圖示)而非加熱器元件,諸如克里申(Kryotherm)所製 造的一型Drift 0·8(40平方公厘)172瓦特。 任一情形下,收集器殼套102皆可配備有生物形態壓電 致動器’諸如費希克儀器(Physik Instrumente)所製造之一型 20 PL122-140系列,其譬如可藉由硬銲結合至各殼套部分 102a、102b的外表面。將一電壓施加至壓電致動器譬如將 會扭曲殼套部分l〇2a、102b,故實質地更改殼套102的焦 點,譬如更改至中間焦點42。 根據本發明的一實施例之一型態,各殼套102譬如可具 16 200425802 有兩個離散部分l〇2a、l〇2b,部分102a、102b各具有其本 身對於另一者及對於較90之曲率及/或角度關係。可馨如料 由沿著光軸更改兩半部l〇2a、102b之間的關係來維持焦 ” 了言如依據動作需求程度譬如利用定位馬達(未圖干) 5或壓電元件(未圖示)來達成此作用。可譬如經由一伸縮節 (未圖示)聯結至殼套102之操縱器(未圖示)藉以將馬達或壓 電凡件譬如安裝在真空環境外部。殼套1〇2則譬如可在接合 部106上譬如藉由一不會阻礙顯著光量透射過收集器之細 連接構件加以互連,所以譬如利用一如上述的致動器對於 10最外部殼套102上譬如接合部106之操縱將可具有同時操縱 所有殼套102之作用。 根據本發明的一實施例之另一型態,由於能夠快速更 換電極,故可使電極壽命變成“擁有成本,,的議題。可譬如 利用如第5至7圖所示之一快速電極更換總成來達成此作 15 用。 根據本發明的另一實施例,由於偏壓電壓譬如來自於 殼套102的反射表面且譬如朝向經粗化表面,殼套102可連 接至一偏壓電壓(未圖示)以使同極性的帶電離子偏向,以供 收集雜屑用。 20 在此時,EUV電極壽命係與微影業所引述的壽命數字 相差了一個數量級。因此,更換成本及電極更換期間的機 具停工構成了 DPP EUV源之“擁有成本,,的大部份。電極26 定位在一亦可譬如容納有收集光學裝置4〇、頻譜純度濾器 50、雜屑阻件32等之大型真空室24内。藉由打斷真空室24 17 200425802 上的松封以譬如接達電極26,將町譬如使真空室24的内部 %扰暴露於譬如濕度、不乾淨等周遭房室條件。真空室24 釋放時’泵除至操作條件之時間將會不利地影響整體性能 (衫響擁有成本)且亦可能因為暴露於外部環境使雜屑及水 5蒸氣附接至室的内壁而很困難。 即使在一完美環境中,對於給定之目前考慮到容納所 需要的光學組件所必須具有的容積之室24而言,泵除時間 係為5到1〇分鐘左右。可譬如藉由添加額外的高真空泵來達 成更快的泵除時間,但依據所選用型式各需要近似$2〇至 10 $3〇K的顯著成本。然而,可能經由將困在室24内之水蒸氣 予以泵除來消除重要的停工時間因素。 根據本發明的一實施例之一型態,譬如藉由添加一與 電極26相鄰之經密封凸緣,將不再需要使容器通氣及重新 密封之後進行後續的泵除。然而,此位置對於此一經密封 15凸緣的位置是不利的。基於需要,必須將收集光學裝置 40(因此包括雜屑阻件36)定位成為緊鄰於匝夾32點。此外, 緊鄰匝夾32之區域譬如會受到超過2〇〇(rc的溫度,或亦易 受到發光期間自電極26表面蒸發的金屬所“鍍覆,,。根據本 發明的-實施例之-型態,因此,可藉由採用_伸縮節122 20來譬如增大電極26梢部與譬如雜屑阻件36等第一光學組件 之間的距離,藉崎如利於更換電㈣。此伸縮節122亦可 對於下列項目具有部分功用:申請人已觀察到會變動之S 爽32位置的光學對準(譬如由於重覆速率及氣體混合物)、以 及對於收集光學裝置之熱效應(譬如收集器4〇的挽曲),其影 18 200425802 響到收集器40的焦距。 藉由伸縮節122的崩潰,可在電極26與諸如雜屑遮蔽器 32等第一光學組件之間建立一足以容納一諸如閘閥13〇等 密封機構之夠大間隙。此閘閥130將在電極26交換期間進行 5 密封住容器22之功能。200425802 (1) Description of the invention: [Technical field to which the invention belongs; j Field of the invention The present invention relates to EUV and 5 soft X-ray light sources that use a discharge between electrodes to form a light emitting plasma. t Prior Art 3 Related Applications This application is a partial continuation of the following cases, which was filed on April 8, 2003 as a partial continuation of US Serial No. 10 / 384,967, filed on March 8, 2003 U.S. Serial No. 10 / 409,254, U.S. Serial No. 10 / 189,824 filed on July 3, 2002, U.S. Serial No. 10 / 120,655, filed on April 10, 2002, now U.S. Patent No. 6,586,757, June 6, 2001 U.S. Serial No. 09 / 875,719, filed on June 6, and U.S. Serial No. 09 / 875,721, filed on June 6, 2001; U.S. Serial Number 15, 09 / 690,084, filed on October 16, 2000; and requested October 31, 2002 The patent application number 60 / 422,808 filed and the benefit of 60 / 419,805 filed on October 18, 2002; each of the above cases are incorporated herein by reference. BACKGROUND OF THE INVENTION It is well known to generate extreme ultraviolet ("EUV"), for example, by applying a high voltage across an electrode to generate a plasma generated by discharge, such as in a gaseous medium such as containing an active material such as xenon. Light at EUV wavelengths, such as 13.5 nm xenon (also known as soft X-rays). These EUV light sources are often referred to as plasma generated ("DPP") EUV (soft X-ray) light sources. U.S. Patent No. 7 200425802 5,763,930 issued to Partlo on June 9, 1998; U.S. Patent No. 6,064,072, issued to Partlo et al. On May 16, 2000; 2002 US Patent No. 6,452,199 issued to Partello et al. On September 17, US Patent No. 6,541,786 issued to Partlo on April 1, 2003, and Certificate issued on July 1, 2003 5 to US Patent No. 6,586,757 to Melnychuck and others, and US Patent Application No. 09 / 752,818 under review, filed on April 10, 2002 under the name "Use Pulse Power System for Far Ultraviolet and X-Ray, No. 10 / 120,655, Inventor Ness et al., Published on November 7, 2002, Announcement No. US / 2002-0163313-A1, July 2002 Submitted on the 3rd as "10" Plasma Focusing Light Source with Improved Pulse Power System, No. 10 / 189,824, inventor Melnychuck and others, published on January 9, 2003, Announcement No. US / 2003-0006383-A1, filed on March 8, 2003, entitled "High Power Deep Ultraviolet Laser with Long Lifetime Optical Device, No. 10 / 384,967, the inventor Yager et al., Submitted on April 8, 2003, the name 15 "Far Ultraviolet Light Source," No. 10 / 409,254, the inventor Melnychuck and others; Each of the above cases deals with the type of EUV light source that specifically uses dpp to generate a plasma for generating light, the disclosure of each of the above cases is incorporated herein by reference. The current EUV collection optics are, for example, composed of several nested shells with a common focus at some common ambient temperatures 20. Generally speaking, these shells are formed of, for example, nickel, and emphasize having relatively thin walls, such as approximately 1 mm thick. The result of EUV light is a high thermal load on the components close to the source of the Euv. In the case of optical components, these thermal loads s may bend the critical surface and shift the focus. 8 200425802 A very efficient way to send EUV light, for example via an "incident glancing angle" reflector. Generally speaking, the nested collector shell, for example, emphasizes that it has at least two different reflective surfaces, such as flat or curved surfaces, so that the plasma generated by self-discharge can emit light at a large angle to a smaller angle of 5 That is, the numerical aperture is collected and delivered to an intermediate focus or focal plane. Avoiding distortion and maintaining the focal plane or focal point is a type that can be partially modified with an EUV light source design. Electrode life is another EUV light source issue that needs attention. An electrode life of 100M firing with 10 10% output degradation is believed to be the minimum requirement for a DPP EUV system. The current technology only allows firing of less than about 30M for the above-mentioned deterioration. The by-product of EUV emission from a turn-clamp plasma generated by a DPP is a high thermal load on the structure and components next to the turn-clamp configuration. This can have several detrimental effects on performance and component life. For example, in the case of a 15 center electrode, the thermal load can be severe enough to cause excessive erosion of the electrode's external surface, such as through material evaporation. Because of several factors including the influence on the shape of the plasma and the inability to withstand the pressure of the cooling water flowing inside the electrode structure, these electrodes must eventually be replaced due to erosion. At this time, the life of the EUV electrode was an order of magnitude different from the life number 20 quoted by Microfilm. Therefore, replacement costs and machine downtime during electrode replacement constitute the majority of the “cost of ownership” of DPP EUV light sources. It is known to use SiC-BN in the defense industry for armor plating. BN-doped SiC is common for SiC-graphite systems such as coated fibers containing BN 9 200425802. TiW has been used on contacts in the semiconductor industry and is a common machining material, such as for pVD dry materials. Another important consideration of a 5 DPPEUV light source is that the plasma generated by the discharge needs to be read for money—the harmful shadows of red electrode debris created on the optical device of the money collection optical element system are simply reduced. DPP asks for light_other—4 The main form is: it needs to inject people and decoration energy most efficiently, such as to achieve a large light output for a given energy input. Very high energy light output is required, and for example due to the setting of 10 = and heat dissipation requirements, there are limitations in the ability to deliver very high energy pulses to the discharge electrode at the required repetition rate, for example. [Summary of the invention] Summary of the invention 15 Self-removal of electricity from the body _ • produces one: genus =: using a metal tooth element gas m chest-Γ 金属 metal debris reduction device. ,, Yes-can include multiple curved masks, where multiple curved masking members have = the inner and outer surfaces connected by the channel, the first space of #, ",, and the points show m and the ancient * The open workshop presents a parent replacement and can have an on-rotation axis and a rotation axis. The shape is elliptical / -® and at the other 20 electrical pulses and its shape is set to supply a discharge = current to the electrode and discharge during discharge. Radial compression stage === production :; It is used as ... ~, there is an inlet connected to the production chamber and it can be pumped to give priority to pumping than the source gas containing-adjusted conductive electricity & The source may be an electrode, and the conductive electrode contains .. ~ difference. 10 200425802 A hybrid ceramic material that is doped in a first region to select at least conductivity and a second region to select at least thermal conductivity. The first region may be located on or near the outer surface of the electrode structure, and the ceramic material may be SiC or alumina, and the dopant may be BN or a metal oxide including SiO or Ti02. The source may include Mobile electrode assembly mount and operable to mount electrode assembly Moved from a replacement position to an operating position, where the removable mounting base is located on a telescopic joint. This source may have a temperature control mechanism that is operatively connected to the collector and is operable to adjust each The temperature of the shell member maintains a temperature-dependent geometry to optimize the glancing angle of the incident reflection 10 from the respective shell member, or has a mechanical positioner for positioning the shell member. Yes A voltage biases the casing. The off-focus lightning can be used to make miscellaneous shields. The anode can be cooled by a hollow metal with two coolant channels or a porous metal with channels. Can Benefits ^ Provides interlocking tabs that are uniformly separated and strengthened without blocking significant amounts of light. From 15 to 15 large or medium-sized pieces are attached to each other to reduce installation rings or hubs to form a hybrid cover. ', The diagram is briefly explained. The first figure shows `` a schematic diagram of the main components of the embodiment of the electro-polymerized EUV (soft X-ray) light source system generated by the discharge; 20 The second figure shows the electrode for generating DPP EUV light. Of Intent; FIG. 3 shows an embodiment of a collector system for an EUV light source, such as a suitable light collecting device for collecting light in an emission cone; FIG. 4 shows an example of a collection shown in FIG. 3 A cross-sectional view of a glancing angle of 11 ^ 5802 operation of the embodiment of the device; FIG. 5 shows an embodiment of the present invention, which includes an electrode replacement system according to an embodiment of the present invention; and FIG. 6 shows Figure 4 is a close-up view of the embodiment; 5 Figure 7 shows the embodiments of Figures 5 and 6 with a gate valve sealing mechanism suitable for electrode replacement; Figure 8 shows one of the embodiments according to the invention Schematic diagram of a procedure for manufacturing materials that can be effectively used in DPP electrodes; FIG. 9 shows a cross-sectional view of a center electrode (anode) 10 according to one embodiment of the present invention; FIG. A three-dimensional cross-sectional view of an electrode assembly according to an embodiment; FIG. 11 shows a part of the electrode assembly shown in FIG. 10 and a close-up three-dimensional cross-sectional view of the center electrode (anode) shown in FIG. 9; 15 Figure 12 shows the electrode assembly shown in Figures 10 and 11. Views; Figures 12a to C show cross-sectional views of the electrode assembly of Figures 10 to 12, with the cross section taken along lines AA, BB, and CC of Figure 12; Figure 13 shows the electrodes of Figures 10 to Ik A cross-sectional view of the assembly, including a center electrode (anode) assembly; 20 FIG. 14 shows the assembly of FIGS. 10 to 13-cold heading, which shows the cooling passage according to an embodiment of the present invention; Peng FIG. 5 shows a perspective view of a debris mask according to an embodiment of the present invention; FIG. 16 shows a schematic diagram of a procedure for manufacturing debris according to the embodiment of the present invention; 12 200425802 masks; FIGS. 17A to 17D show Another debris shield according to an embodiment of the present invention; and FIGS. 18A and 18B show a simulation model of a type of production and a plasma turn clamp according to an embodiment of the present invention. [Real mode; J Detailed description of the preferred embodiment Now referring to FIG. 1, a plasma ("DPP,") EUV and soft X-ray light source 20 generated by a discharge according to one embodiment of the present invention is shown. The EUV light source may be Example 10 includes a housing 22 that defines a discharge cell 24. For example, a pair of electrodes 26, such as one of a wall attached through the chamber 22, may be sealed to seal the opening, and the pair of electrodes 26 may include a generally cylindrical The electrodes include, for example, an external electrode 28 that may be a cathode, and an internal electrode 30 that may be an anode, or vice versa, but the present disclosure will adopt the aforementioned method. The internal electrode 30 may be as shown in FIG. 2 and FIG. 15. It is shown that, for example, it is insulated from the external electrode 28 by an insulator 70, and when, for example, a solid-state pulse power module 139 is supplied with a high-voltage and a fast-rising electric energy pulse, as shown in FIG. For example, a plasma containing helium generates a discharge between the electrodes 28 and 30. For example, as shown in Figures 10 to 12, the discharge can be facilitated by the activation of a pre-ionizer 206. 20 This discharge Pre-ionization The internal electrodes of the insulator 206 and the insulator 70 generally show a magnetic field extending radially, as shown in 82 in FIG. 2, and then extend axially when being sent along the outer surface 208 of the internal electrode (anode) 30, as shown in FIG. 2. This is shown schematically in Figure 84. The axially extending magnetic field material forms a high-density plasma turn that is briefly defined by a magnetic field 84 containing a source material such as xenon. 13 '32' The source material is, for example, via a source duct 60 Delivered to the site of orbicularitis and, for example, into the central electrode (anode) tip recess 34 of the central electrode 30. The light emitted from the plasma coil clamp passes through, for example, can trap trapped sounds and may damage the collection. Debris shields 36 of reflective surfaces in the reflector 40, such as ionized xenon particles emitted from the plasma during the light generation procedure, or debris shields of electrode materials such as crane debris from the electrode, may then be provided by, for example, an incident collector 40 The glancing angle is collected. The light focused by the collector 40 can also pass through a spectral purity filter, for example, the light focused by the collector 40 can be the focal point or focal point of the so-called intermediate focus 42. Incident reflection The single curved surface of the EUV light reflects rays due to the grazing angle. The spectral purity filter can be used to filter out almost all light except for narrower frequencies, such as 13.5 nm and 13.5 nm. One form of an embodiment of the present invention includes compensating the thermal load on the collector 40 and 15 to generate a more uniform high Ενν energy delivered to the intermediate focus 42. Referring now to FIGS. 3 and 4, there is shown in accordance with the present invention A perspective sectional view of the collector 40 according to an embodiment of the invention also shows a schematic diagram of an example of the collector 40 according to the embodiment of the present invention. As shown in FIG. 4, one is used to track some exemplary restricted rays. The ray system has a limiting ray 04 and a limiting ray and is arranged to reflect the limiting ray 104 from the σ 卩 1Q2a to the part 1Q2b at a glancing angle of incidence, wherein each shell of the collector 40 102 has a first shell portion 102a and a second shell portion 102b, and each portion 102a, can be flat or curved. On some Chuanxiong 14 200425802, the grazing angle of the incident reflection focuses the light in the rays 104, 104, toward the intermediate focal point 42. For this application, the light can be widened and needs to pass through a filter, such as the spectral purity filter 50 shown in FIG. As shown in FIG. 4, there is only a very small volume, that is, a solid space to support the thickness of each of the shells 102 and 5 including the component parts 102a and 102b. This will hinder the transmission of adjacent casings, such as one. By modifying the shell's geometry, thicker walls can increase the individual grazing angles, thereby reducing the design's transmission efficiency. For example, depending on the wavelength λ of the emitted light and the material of the reflective surface, some of the light rays 104 "and 104 '" do not enter the cone of the collector 40 or enter the grazing angle at an appropriate angle of 10 (usually less than about 2.) When not entering, it is not collected by the collector. As shown in Fig. 3, the collector 40 may be composed of a plurality of nested shells 102, each of which has a smaller diameter than the other outer shell. The shell can be composed of a plurality of parts, for example, two parts 102a and 102b, of which the part 102a is closest to the turn clamp portion 32. For example, the angle of each of the shells 102 and 102a can be set to reflect the light rays in a part of the incident cone of the light generated by the plasma on the collector 40 shell 102 and reflect the light to the Section 102b. On the portion 102b, a further incident reflection glancing angle may occur, which may, for example, reflect an incident EUV 20 light at an angle focused on the intermediate focal point 42. The housing 102 may be mounted to a collector hub 90, for example, and the collector hub 90 may have a collector hub extension 92 extending from the hub 90 along the axial length of the collector 40, for example. A plurality of, for example, four radial supports 94 are also attached to the 90s. Kexin may connect each of the shells 102 to the bracket 94 by welding or brazing. It is possible to strengthen the structure of the collector 40 and the installation method of the shell sleeve 102 to the bracket 94 by 15 200425802 to the collector 100. According to one form of an embodiment of the present invention, the maximum heat load that the collector 40 can expect to see in month b can be obtained. The geometry of the collector 40 and its composition 5 The method of generating the shell 10 and its parts 102a and 102b can make it, for example, only one type of performance required by the focus specialist. That is, at a part of a known preselected temperature, the geometry of a known collector element 'will result in the required operating parameters, such as the focus selection of an intermediate focal point 42 such as a particular lambda. The heating element (not shown) may be attached to each of the 10 individual casings 102 of the collector 40 or, for example, to the hub 90 and / or its extension 92, and for example, whether having the original would cause the collector 40 temperature to vary with Any task cycle or repetition rate that changes over time can be used to maintain this ideal geometry. This changing temperature may, for example, cause the shell portions 102a, 102b to flex and / or modify their positional relationship with each other. According to another version of an embodiment of the present invention, 15 cooling can be used to maintain the required fixed temperature, such as including a Peltier cooler (not shown) instead of a heater element, such as Kryotherm ) Manufactured a Drift 0.8 (40 square millimeters) 172 watts. In either case, the collector housing 102 can be equipped with a biomorphic piezoelectric actuator such as a type 20 PL122-140 series manufactured by Physik Instrumente, which can be bonded by brazing, for example To the outer surface of each shell part 102a, 102b. Applying a voltage to the piezoelectric actuator, for example, will distort the housing parts 102a, 102b, so that the focal point of the housing 102 is substantially changed, for example, to the intermediate focus 42. According to a form of an embodiment of the present invention, each of the shells 102 may have 16 200425802, for example, and has two discrete parts 102a and 102b, and each of the parts 102a and 102b has its own for the other and for more than 90 Curvature and / or angular relationship. Kexin can maintain the focus by changing the relationship between the two halves 102a and 102b along the optical axis as expected. According to the degree of action required, for example, using a positioning motor (not shown) 5 or a piezoelectric element (not shown) This effect can be achieved. For example, a manipulator (not shown) connected to the casing 102 through a telescopic joint (not shown) can be used to install a motor or a piezoelectric component, such as outside a vacuum environment. The casing 1 2 can be interconnected, for example, on the joint 106 by a thin connection member that does not hinder the transmission of a significant amount of light through the collector, so for example, the 10 outermost casing 102 can be joined using an actuator as described above. The operation of the part 106 will have the effect of simultaneously manipulating all the shells 102. According to another form of an embodiment of the present invention, since the electrodes can be quickly replaced, the electrode life can become a "cost of ownership" issue. This can be done, for example, using a quick electrode replacement assembly as shown in Figures 5 to 7. According to another embodiment of the present invention, since the bias voltage is, for example, from the reflective surface of the casing 102 and faces toward the roughened surface, for example, the casing 102 may be connected to a bias voltage (not shown) to make the same polarity Charged ions are biased for debris collection. 20 At this time, the life of the EUV electrode was an order of magnitude different from the life figures quoted by Microfilm. Therefore, replacement costs and equipment downtime during electrode replacement constitute a large part of the “cost of ownership” of the DPP EUV source. The electrode 26 can also be positioned in a single location such as a collection optics 40, a spectral purity filter 50, and debris The large vacuum chamber 24 of the resistance member 32 and the like. By breaking the loose seal on the vacuum chamber 24 17 200425802 to access the electrode 26, for example, the interior of the vacuum chamber 24 is exposed to humidity, dirt, etc. Surrounding chamber conditions. The time of 'pumping to operating conditions when vacuum chamber 24 is released will adversely affect overall performance (cost of ownership) and may also cause debris and water 5 vapors to attach to the chamber due to exposure to the external environment Even in a perfect environment, the pumping time is about 5 to 10 minutes for a given room 24, which currently takes into account the volume necessary to accommodate the required optical components. For example, Faster pumping times are achieved by adding additional high vacuum pumps, but each requires a significant cost of approximately $ 20 to 10 $ 30K depending on the type of application selected. However, it is possible to pass through Vapor is pumped to eliminate important downtime factors. According to one embodiment of the present invention, for example, by adding a sealed flange adjacent to the electrode 26, it is no longer necessary to vent and reseal the container. Subsequent pumping is performed later. However, this position is not favorable for the position of the sealed 15 flange. Based on the need, the collection optics 40 (and therefore the debris blocking member 36) must be positioned next to the turn clamp 32 points In addition, the area immediately adjacent to the turn clamp 32, for example, may be subjected to a temperature of more than 200 (rc), or may be "plated" by a metal that evaporates from the surface of the electrode 26 during light emission. Type, therefore, by using the _ telescopic joint 122 20 to increase the distance between the tip of the electrode 26 and the first optical component such as the debris blocking member 36 to facilitate the replacement of the battery. This telescopic joint 122 can also have some functions for the following items: the applicant has observed that the optical alignment of the S32 32 position can change (for example, due to repetition rate and gas mixture), and the thermal effect on the collection optics For example, the collapsing of the collector 40), its shadow 18 200425802 sounds to the focal length of the collector 40. With the collapse of the telescopic joint 122, it is possible to establish Enough clearance to accommodate a sealing mechanism such as a gate valve 130. This gate valve 130 will perform the function of sealing the container 22 during the electrode 26 exchange.

由於源自於阻夾32位置之大的熱負荷,伸縮節η]鐾如 必須具有更大直徑才能存活。然而,因為譬如必須在正常 操作期間從閘閥130的開孔抽出,伸縮節122的直徑亦決定 了譬如密封住室24所需要的閘閥130尺寸。譬如第6圖所示 10藉由將伸縮節122相對於電極26定位成“淺狀”,將可譬如顯 著地減輕伸縮節122所暴露的熱負荷。譬如定位在室以壁 132與電極總成160上的一凸緣;[34之間、伸縮節122與匝失 32位置之間之“經遮蔽”伸縮節122將有利於限制伸縮節122 的尺寸(譬如較小尺寸),這對於閘閥13〇亦成立。 15 因為來自任何彈性體的任何滲氣均將嚴重地降低光學Due to the large heat load originating from the position of the resistance clamp 32, the expansion joint η] must have a larger diameter to survive. However, because, for example, it must be withdrawn from the opening of the gate valve 130 during normal operation, the diameter of the telescopic joint 122 also determines, for example, the size of the gate valve 130 required to seal the chamber 24. For example, as shown in FIG. 10, by positioning the expansion joint 122 in a "shallow shape" with respect to the electrode 26, the thermal load to which the expansion joint 122 is exposed can be significantly reduced, for example. For example, a flange positioned on the chamber wall 132 and the electrode assembly 160; the "shielded" telescopic joint 122 between 34 and the telescopic joint 122 and the turn 32 position will help limit the size of the telescopic joint 122 (Such as smaller size), this also holds true for the gate valve 130. 15 Because any outgassing from any elastomer will severely reduce the optical

組件的壽命,閘閥130必須不具有EUV光學組件所處環境常 見之彈性體。然而,非彈性體密封之缺點在於密封表面的 表面光製及平坦度方面具有嚴苛要求。在Euv DPP環境 内’必須將這些表面定位成為可譬如盡量減少由於自電極 20表面排放的蒸發金屬所造成之鍍覆。本發明的另一實施例 可包括一可更換式密封表面136,萬一目前裝設的密封表面 變差則可加以更換。本發明的另一實施例在密封凸緣126附 近包括了一乾燥氮氣清除點。如果密封表面變成無法在容 咨内維持真空完整性之污染程度(電極服務期間),可偵測到 19 洩漏且將室充填乾燥氮氣以防止形成水蒸氣及周遭環境所 含的雜屑入侵。 EUV光源20的元件可能相當大且因而相當重。真空容 器22的個別段可能重量超過4〇〇镑。根據本發明的一實施例 之一型悲’藉由將各模組譬如真空容器^段瓜冲電極 32/DPP換向器140獨立安裝在—組共同的線性軌(未圖示) 上’能夠將這些段解除栓鎖及滑開以如第7圖所示供服務 用。線性執譬如可在電極更換過程中的重新組裝期間提供 容易操作模組及對準之雙重用途。 根據本發明的一貫施例一型態,必須小心考量用於電 極26的材料,並對於其製造技術與其特定結構型態考慮到 電極必須在其中運作之惡劣環境,制是必須容忍的結構 性與熱性負荷。碳化矽Sic為根據本發明的一實施例之一種 具有有利性質之材料的範例,其中譬如針對高導熱與導電 性來調整SiC。亦可藉由添加特定耐火性雜質來改變一般稱 為耐火金屬碳化物陶瓷的此種材料及類似材料之導電性, 如下文更詳細地描述。 除了調整Sic及類似材料外,譬如亦可藉由添加譬如二 氧化鈦來調整氧化鋁、二氧化鋁(Al〇2)的導電性。所產生的 傳導性經摻雜_譬如比起任何金屬能夠更好地承受嘴濺 損害及熱損害。此外,鈦鎢(TiW)陶曼金屬組合物 (“ceremets”)亦可能具有類似SiC及相關材料的效用。Tiw具 有傳導性且不需要金屬摻雜來產生導電性,然而,其擁有 更有限的導熱性。如果藉由真空熱壓產生,Tiw機具可良 200425802 好地且最適合地使用於根據本發明的一實施例之型態。二 氧化鋁-氧化鈦、氧化鋁-二氧化鈦(A1N-Ti02)系統亦可對於 低溫系統具有效用。 申請人已經發現,金屬電極26,特別是内電極(陽極)30 5 極易傾向於在電極26表面特別是匝夾32附近處亦即陽極30 上產生融化及/或燒蝕。由於申請人觀察到對於所使用電極 26表面之損害,故暗示匝夹32中所形成的電漿會將顯著熱 能及離子能傳遞至電極26表面上,特別是陽極30上。即使 鎢钍(W-Th)合金亦譬如約在3500。K呈現融化且容易喷濺。 10 共價材料傾向於電性絕緣且更能抵抗離子性損害。可 針對導電性及導熱性來調整一諸如SiC或氧化鋁等經摻雜 的陶瓷。譬如摻雜有BN的SiC將在2700。K分解,且可經過 改質而具有接近純紹的導熱性。SiC中的BN摻雜程度可能 高達30%重量。因為抗熱衝擊性的趨勢與材料導熱性、強 15 度及斷裂韌性成正比且與膨脹係數成反比,SiC-BN複合物 可表現出極高的抗熱衝擊性。氧化鋁的抗熱衝擊性為2〇〇°c (△T°c),具有譬如30%的BN摻雜之BN-SiC複合物表現出 63〇至 l2〇〇°C(AT°C)。 因為可能具有不當的陶瓷的體塊傳導性,可調整接近 20電極26表面之導電性。至於氧化鋁材料,可藉由金屬氧化 物摻雜(Sn〇、Ti02)來增強表面傳導性而不會顯著地負面改 變材料的其他有利性質。 可以許多方式來合成SiC-BN或氧化鋁-二氧化鈦系 統。可對於混合的源粉末使用電漿噴灑或液體相燒結。可 21 200425802 修改諸如Trex在Kauai所用之一種經顆粒增強的CVD成長 程序,藉以求得最佳的材料密度且其對於不會龜裂或爆炸 的電極來說很重要。基於可取得的文獻及資訊,譬如請見For the life of the assembly, the gate valve 130 must not have the elastomers commonly found in the environment in which the EUV optical assembly is located. However, the disadvantage of non-elastomeric seals is that they have strict requirements on the surface finish and flatness of the sealing surface. Within the Euv DPP environment, these surfaces must be positioned to minimize, for example, the plating caused by the evaporated metal discharged from the electrode 20 surface. Another embodiment of the present invention may include a replaceable sealing surface 136, which may be replaced in the event that the currently installed sealing surface deteriorates. Another embodiment of the present invention includes a dry nitrogen purge point near the sealing flange 126. If the sealing surface becomes contaminated (during electrode service) that cannot maintain vacuum integrity within the enclosure, a 19 leak can be detected and the chamber filled with dry nitrogen to prevent the formation of water vapor and the intrusion of debris from the surrounding environment. The elements of the EUV light source 20 can be quite large and therefore quite heavy. Individual sections of the vacuum container 22 may weigh more than 400 pounds. According to an embodiment of the present invention, the type “can be independently installed on a set of common linear rails (not shown) by each module such as a vacuum container, a segmented electrode 32 / DPP commutator 140” Unlock and slide these segments out for service as shown in Figure 7. Linear actuators, for example, provide dual uses for easy module handling and alignment during reassembly during electrode replacement. According to the consistent embodiment of the present invention, the material used for the electrode 26 must be carefully considered, and the manufacturing technology and its specific structural form must take into account the harsh environment in which the electrode must operate. Thermal load. Silicon carbide Sic is an example of a material with advantageous properties according to an embodiment of the present invention, such as adjusting SiC for high thermal conductivity and electrical conductivity. It is also possible to change the conductivity of such materials and similar materials commonly referred to as refractory metal carbide ceramics by adding specific refractory impurities, as described in more detail below. In addition to adjusting Sic and similar materials, for example, the conductivity of alumina and alumina (AlO2) can be adjusted by adding, for example, titanium dioxide. The resulting conductivity is doped—for example, it can withstand mouth splash damage and thermal damage better than any metal. In addition, titanium tungsten (TiW) Taoman metal composition ("ceremets") may also have similar effects as SiC and related materials. Tiw is conductive and does not require metal doping to create conductivity, however, it has a more limited thermal conductivity. If produced by vacuum hot pressing, the Tiw machine can be used well and most suitably for the type of an embodiment according to the present invention. Alumina-titanium oxide, alumina-titanium dioxide (A1N-Ti02) systems are also effective for low temperature systems. The applicant has found that the metal electrode 26, especially the internal electrode (anode) 30 5 is prone to melting and / or ablation on the surface of the electrode 26, especially near the turn clamp 32, that is, on the anode 30. Since the applicant has observed damage to the surface of the electrode 26 used, it is suggested that the plasma formed in the turn clamp 32 will transfer significant thermal and ion energy to the surface of the electrode 26, especially the anode 30. Even tungsten-rhenium (W-Th) alloys are around 3500, for example. K appears melted and splashes easily. 10 Covalent materials tend to be electrically insulating and more resistant to ionic damage. A doped ceramic such as SiC or alumina can be adjusted for electrical and thermal conductivity. For example, BN-doped SiC will be at 2700. K is decomposed and can be modified to have a thermal conductivity close to pure Shao. The degree of BN doping in SiC may be as high as 30% by weight. Because the trend of thermal shock resistance is directly proportional to the material's thermal conductivity, strength 15 degrees and fracture toughness, and inversely proportional to the expansion coefficient, SiC-BN composites can exhibit extremely high thermal shock resistance. Alumina has a thermal shock resistance of 200 ° C (ΔT ° c), and a BN-SiC composite having, for example, 30% BN doping exhibits 63 ° to 120 ° C (AT ° C). Since the ceramic may have inappropriate bulk conductivity, the conductivity close to the surface of the electrode 26 may be adjusted. As for alumina materials, metal oxide doping (Sn0, Ti02) can be used to enhance surface conductivity without significantly negatively changing other beneficial properties of the material. There are many ways to synthesize SiC-BN or alumina-titanium dioxide systems. Plasma spraying or liquid phase sintering can be used for the mixed source powder. May 21 200425802 Modify a particle-enhanced CVD growth procedure such as that used by Trex at Kauai to obtain the best material density and it is important for electrodes that do not crack or explode. Based on available literature and information, see for example

Trex Enterprises的網頁。因為Trex的程序在低壓(100托耳) 5完成’電極將具有相對較低的溶解氣體且具有高密度。Trex SiC材料接近100%稠密,此情形很理想。此程序示意性顯 示於第8圖,圖中譬如示意性顯示經由顆粒增強的cvd之 SiC-BN複合物合成,亦即譬如一譬如100毫托耳、的 還原ί衣i兄中糟由'一存在H2的MCS而在出現一 SiC表面144時 10甲基氣矽烷(Methly-Chloro Silane)140於BN粒子142上之熱 分解。 其他合成方法譬如可用於氧化鋁_TiW: A)在一還原環 境中燒結以在陶瓷表面上生成非理想配比氧化物,亦即其 氧氣不足且具傳導性;B)將氧化鋁放置在二氧化鈦中且將 15兩者燒結/擴散在一起;C)沉積交替層的兩材料,然後以 &gt;1900°C來燒烤此系統或D)真空熱加壓,因為耐火金屬的熱 加壓可含有高的溶解氣體程度,故其譬如可使用於純W。 高的溶解氣體程度將促進電極凹餘及金屬電極中的火山型 爆發。 20 現在參照第9圖,圖中顯示一電極26(譬如一陽極30), 其可譬如具有一可譬如由經摻雜的氧化鋁或SiC_BN形成且 亦可能譬如為未摻雜的TiW之外表面150。 一譬如供微型微影術使用之用於EUV之放電產生的電 灸水焦光源20亦引發了關於電極26之其他需求,特別是有 22 200425802 關冷卻及製造需求。第2圖示意顯示之一陰極%及一陽極3〇 的同軸電極組譬如可在脈衝式操作期間暴露於高的平均熱 通量(&gt;1千瓦/平方公分)及極高的暫態熱通量(&gt;;L百萬瓦/平 方公分)。如此可能譬如需要連同最佳可取得的冷卻技術來 5使用耐火金屬及專用的合金,譬如上文所述。在具有不同 熱膨脹係數的不同金屬之間亦可能需要高真空及結構完整 的接合部。 參照第9至16圖,顯示包括一電極總成16〇之本發明的 一實施例。電極總成160譬如可包括一陰極(外電極)總成162 10及一陽極總成220。申請人已經在數項具不同外徑的幾何實 施例中測試圓柱形陽極30(内電極)。測試最小的經冷卻裝置 具有0.625吋外徑,並測試具有〇.725吋外徑之另一者。可想 見未來將需要南達1”外徑或更大的較大電極。然而,由於 熱通量分佈在較大面積,較大電極的冷卻可能較不困難。 15然而,在較大直徑的電極中,由於在製造與操作期間隨著 溫度具有較大的相對尺寸變化,不同金屬之間的接合將變 得更困難。相反地,較小直徑的電極可能更容易製造但在 操作期間更難以冷卻。一般而言,由於需要使一譬如氣體 等電漿源輸送經過電極中心,將令此設計更加複雜,目前 20預見此氣體譬如為氙。此輸送亦可能處於固體狀態或液體 狀態。可將電極26及連同所輸送的電漿源視為消耗品,因 此亦具有成本敏感度。 一般而言’可利用硬銲及熔合熔接技術之混合方式來 組裝屬於本發明的一實施例所想見類型之電極。接合類型 23 200425802 及製造次序譬如取決於特定設計。如果可能的話,可使用 譬如304L或316L的易熔接不銹鋼來製造電極總成160。這譬 如可保持低的材料成本、簡化機械加工及組裝並改善完成 品的良率。由於高表面溫度暫態,電極26完全可譬如由一 5 諸如鎢或其假合金包括W-Cu、W-La、W-Th及W-Re等耐火 金屬製成。然而,這將造成具有〜4.5 ppm/°C低熱膨脹係數 (CTE)的脆耐火金屬接合至諸如具有〜16 6 ppm/°c較高CTE 的鋼等之問題。此接合可能需要譬如與高真空相容及能夠 同時承受譬如超過1000 psig之内部冷卻劑壓力。由於需要 10在鶴中機械加工譬如即便利用所謂“可機械加工,,型假合金 普通仍無法旋設或銑設之深型環狀冷卻通路,將使此設計 進一步更加複雜’故必須譬如利用放電機械加工(“EDM”) 及研磨程序加以生成。大部份元件需要高精密機械加工, 以確保電極總成16〇的適當且均勻的冷卻可滿足譬如緊密 15受限的冷卻容積等增添之需求。 根據本發明的一實施例之一型態,申請人目前想見鎢 對於鋼接合部採用硬銲方式,譬如在一處於1〇至6托耳壓力 範圍的真空爐具中譬如使用〜1〇〇〇cC溫度的金及鎳合金,諸 如NI0R0®(82%Au-18%Ni)。因為金能夠良好地濕潤鎢且具 20有问延展性藉以譬如在接合部令導致較低的殘留應力,所 以申請人已經選用金。根據本發明的一實施例之一型態的 特定接合部設計可使得鋼對於鎢提供一環狀安裝槽。在爐 具中加熱期間,更快速膨脹的鋼會使鎢從其内徑產生彈性 應變。這譬如具有冷卻時可降低鎢中的殘留應力、而且亦 24 200425802 將嫣精確地定心在鋼球中之雙重利益。較低的殘留應力對 於避免鶴龜裂而言係極為重要。 根據本發明的一型態之另一種可能技術係採用銅回 鑄。申請人想見一種包括將熔融無氧的銅傾倒在譬如一耐 5火金屬電極胚料周圍之程序。隨後可從所產生的總成將完 成的元件進行機械加工。雖然無氧的銅具有17卯111/。〇的 CTE,其柔軟且具延展性而只有1〇 ksi的降伏應力(諸如 304L等沃斯田不銹鋼的〜25%)因此可在接合部局部地降伏 且大幅地降低了鎢上的壓縮應力。如果需要進一步降低殘 10留應力則隨後可加以退火。此程序的一特別優點係為結合 部的良好真空及結構性質。此程序產生的此結合部譬如概 括更不容易具有原本是硬銲式總成的問題之洩漏狀況。 此技術的主要缺點譬如在於銅的缺乏強度。銅譬如並 不能良好地應付螺紋細節或金屬密封所施加的高局部支承 15力,且其根據本發明的一實施例之型態認為對於本申請案 很重要。然而,譬如可藉由小心設計來避免此等問題,且 申請人認為此等問題並不會限制使用此技術根據本發明的 一實施例之型態來製造DPP EUV電極。普藍西(pianse〇且 包括其美國子公司碩瓦柯夫(Schwartzkopf)及其他單位係 20為根據剛剛引用的程序製成之接合部的供應來源。 硬銲至鋼之大於〜〇·75”外徑的鎢電極譬如可由於接合 介面的殘留應力而具有高的龜裂危險。一用以避免此現象 之技術譬如係在接合部中使用一轉折插入件。轉折插入件 的材料選擇譬如可能需要具有接近鎢的CTE但亦具有良好 25 &amp;展性以更良好地應付譬如終將在與鋼的邊界發生之較高 力 W 之材料。良好的可機械加工性亦為有幫助的性質。根 據本發明的一實施例之一型態,由於鉬能夠符合需要此判 別標準且可以類似技術良好地硬銲,申請人想見可使用具 5 古&lt; •35 ppm/°CCTE之鉬。這對於所想見較大直徑的嫣電極 將特別有用,且其暗示將此概念使用在工程設計中。 根據本發明的一實施例之型態,電極總成160可包含一 外電極總成162,外電極總成162可具有一連接至一用於以 安裝螺絲168將電極總成160安裝至SSPPM 139的電極總成 安裝凸緣166之電極總成侧壁164。概呈圓柱形側壁164可連 接至一圓形冷板170或與其成為一體,圓形冷板170可在其 中機械加工一中央開口以插入一陰極基底21〇及複數個冷 命通路 172 ' 174及214、216。 外電極(陰極)基底210可在其内機械加工有複數個冷卻 15 、 通路184及入口管182開口及出口管180開口,而譬如形成四 個通路184且其各具有一入口管182及一出口管180,以冷卻 陰極28用。冷卻劑可從一冷卻劑入口 173進入至一入口充氣 室172,且入口充氣室172連接至一對相對的入口充氣室176 及178(顯示於第12c及14圖中)。四個長管180的兩者各連接 2〇 至入口充氣室176或178。四個短管182的兩者各連接至一各 別的通路184且連接至一出口充氣室214或216,各出口充氣 室214或216連接至一冷卻劑出口 175。 陰極基底210亦可機械加工以包含一用於形成陰極内 壁163之中央開口 218。 26 200425802 電極總成160的材料且包括外電極(陰極)總成162及内 電極(陽極)總成220譬如可為不銹鋼3〇41^型,但可由經燒結 鎢或上述材料製成之陽極3〇則除外。隔板256與内壁25〇及 254在電極3〇頂上相遇的點之間的分隔距離可能係為重要 5的尺寸,且必須基於在隔板256與電極壁250、254之間通過 此點提供適當冷卻所需要的冷卻劑流量加以選擇。 根據本發明的一實施例之一型態,可利用一簡單的開 放通路冷卻配置來冷卻陽極30,譬如其中冷卻劑係流上藉 由具有電極30的一中空内部252之陽極3〇所形成的内電極 10 (陽極)3〇之一内壁250、然後流下内電極(陽極)3〇的另一内 壁254 ’可能藉由將一熱管隔板256裝拼在中空内部252内的 内壁250、254之間以便利此作用。可藉由電極内壁250、254 之間邊界的對流以及穿過隔板256與内壁250、254之間的冷 卻劑來達成熱傳。申請人已經決定出此應用中可達成之最 15 好熱性結果’其中譬如使冷卻劑流上内部内壁254及流下外 部内壁250。Homepage of Trex Enterprises. Because Trex's procedure is done at low pressure (100 Torr) 5 'the electrode will have relatively low dissolved gas and high density. The Trex SiC material is close to 100% dense, which is ideal. This procedure is shown schematically in Fig. 8. In the figure, for example, the SiC-BN composite via particle-reinforced cvd is schematically shown, that is, for example, a reduction of 100 millitorr. In the presence of MCS of H2, the thermal decomposition of 10 Methly-Chloro Silane 140 on BN particles 142 when a SiC surface 144 appeared. Other synthetic methods can be used, for example, for alumina_TiW: A) Sintering in a reducing environment to generate non-ideal oxides on the ceramic surface, that is, its oxygen is insufficient and conductive; B) Alumina is placed on titanium dioxide And 15 sintering / diffusing the two together; C) depositing two layers of alternating layers, and then grilling the system at> 1900 ° C or D) vacuum hot pressing, because the hot pressing of refractory metals can contain high Of dissolved gas, so it can be used for pure W, for example. High levels of dissolved gas will promote electrode dents and volcanic explosions in metal electrodes. 20 Referring now to FIG. 9, there is shown an electrode 26 (such as an anode 30), which may have, for example, an outer surface of TiW which may be formed, for example, of doped alumina or SiC_BN and may also be, for example, undoped TiW. 150. An electromoxibustion hydrofocal light source 20, such as that produced by EUV discharges for use in microlithography, has also caused other demands on the electrodes 26, especially 22 200425802 cooling and manufacturing requirements. Figure 2 schematically shows a coaxial electrode group with one cathode% and one anode 30, for example, can be exposed to high average heat flux (&gt; 1 kW / cm 2) and extremely high transient heat during pulsed operation. Flux (&gt; L MW / cm2). This may, for example, require the use of refractory metals and special alloys in conjunction with the best available cooling technology, as described above. High vacuum and structurally complete joints may also be required between different metals with different thermal expansion coefficients. Referring to Figures 9 to 16, an embodiment of the present invention including an electrode assembly 160 is shown. The electrode assembly 160 may include, for example, a cathode (external electrode) assembly 162 10 and an anode assembly 220. The applicant has tested cylindrical anode 30 (internal electrode) in several geometric embodiments with different outer diameters. The smallest cooled device tested has an outer diameter of 0.625 inches, and the other has an outer diameter of 0.725 inches. It is envisaged that larger electrodes with an outer diameter of 1 "or larger will be needed in the future. However, because the heat flux is distributed over a larger area, cooling of larger electrodes may be less difficult. 15 However, in larger diameter Among electrodes, due to large relative dimensional changes with temperature during manufacturing and operation, joining between different metals will become more difficult. Conversely, smaller diameter electrodes may be easier to manufacture but more difficult during operation Cooling. Generally speaking, this design is made more complicated by the need to transport a plasma source, such as a gas, through the center of the electrode. At present, 20 gas is foreseen, such as xenon. This transport may also be in a solid or liquid state. The electrode can be 26 and the delivered plasma source are regarded as consumables, so they are also cost-sensitive. Generally speaking, 'a combination of brazing and fusion welding technology can be used to assemble a type that is contemplated by an embodiment of the present invention. Electrodes. Joint type 23 200425802 and manufacturing sequence, eg depending on specific design. If possible, use fusible stainless steel such as 304L or 316L Manufacture electrode assembly 160. This, for example, can keep material costs low, simplify machining and assembly, and improve the yield of finished products. Due to high surface temperature transients, the electrode 26 can be completely composed of, for example, a 5 such as tungsten or its pseudoalloy. Made of refractory metals such as W-Cu, W-La, W-Th, and W-Re. However, this will cause brittle refractory metals with a low coefficient of thermal expansion (CTE) of ~ 4.5 ppm / ° C to join such materials as ~ 16 6 ppm / ° c higher CTE steel, etc. This joint may need to be compatible with, for example, high vacuum and able to withstand internal coolant pressures such as more than 1000 psig. Because of the need for 10 machining in cranes such as even using the so-called " Machinable, deep-type annular cooling channels that cannot normally be rotated or milled with pseudo-alloys will further complicate this design. Therefore, it must be generated using, for example, electrical discharge machining ("EDM") and grinding procedures. Most components require high-precision machining to ensure that the proper and uniform cooling of the electrode assembly 160 can meet the increased demand such as tight 15-limited cooling volume. According to a form of an embodiment of the present invention, the applicant currently wants to see that tungsten uses a brazing method for the steel joint, such as in a vacuum stove in the pressure range of 10 to 6 Torr, such as ~ 100. 0CC gold and nickel alloys, such as NI0R0® (82% Au-18% Ni). The applicant has chosen gold because it can wet tungsten well and has low ductility, for example, resulting in lower residual stress in the joint. The specific joint design according to one form of an embodiment of the present invention enables the steel to provide an annular mounting groove for tungsten. During heating in the stove, the more rapidly expanding steel causes tungsten to elastically strain from its inner diameter. This, for example, has the dual benefit of reducing the residual stress in tungsten when cooling, and also centering the steel precisely in the steel ball. Lower residual stress is extremely important to avoid crane cracking. Another possible technique according to one form of the invention is the use of copper recasting. The applicant wanted to see a procedure involving pouring molten oxygen-free copper around, for example, a refractory metal electrode blank. The finished component can then be machined from the resulting assembly. Although oxygen-free copper has 17 卯 111 /. The CTE of 〇 is soft and ductile with only 10 ksi of reduced stress (~ 25% of Vostian stainless steel such as 304L), so it can locally reduce the stress at the joint and greatly reduce the compressive stress on tungsten. If the residual stress needs to be further reduced, it can be subsequently annealed. A special advantage of this procedure is the good vacuum and structural properties of the joint. The joint produced by this procedure, for example, is generally less likely to have a leak condition that was originally a problem with the brazed assembly. The main disadvantage of this technique is, for example, the lack of strength of copper. Copper, for example, does not cope well with high local support forces imposed by thread details or metal seals, and its form according to an embodiment of the invention is considered important for this application. However, for example, these problems can be avoided by careful design, and the applicant believes that these problems do not limit the use of this technology to manufacture DPP EUV electrodes according to a form of an embodiment of the present invention. Pianse 0 and including its US subsidiary Schwartzkopf and other units 20 are sources of supply for joints made according to the procedure just cited. Brazing to steel is greater than ~ 〇.75 " A tungsten electrode with an outer diameter, for example, may have a high risk of cracking due to the residual stress of the bonding interface. A technique to avoid this phenomenon is to use a turning insert in the joint. The material selection of the turning insert may be required, for example. Materials that have a CTE close to tungsten but also have good 25 &amp; ductility to better cope with, for example, higher forces W that will eventually occur at the boundary with steel. Good machinability is also a helpful property. According to According to one form of an embodiment of the present invention, since molybdenum can meet the requirement of this discrimination standard and can be brazed well by similar techniques, the applicant wants to see molybdenum that can make appliances <35 ppm / ° CCTE. This is for The envisioned larger diameter electrode will be particularly useful, and it implies that this concept is used in engineering design. According to a form of an embodiment of the present invention, the electrode assembly 160 may include an external electrode Assembly 162, outer electrode assembly 162 may have an electrode assembly side wall 164 connected to an electrode assembly mounting flange 166 for mounting electrode assembly 160 to SSPPM 139 with mounting screws 168. Approximately cylindrical The side wall 164 may be connected to or integrated with a circular cold plate 170, in which the circular cold plate 170 may be machined with a central opening to insert a cathode substrate 21 and a plurality of cold-life passages 172 '174 and 214, 216. The external electrode (cathode) substrate 210 may be machined therein with a plurality of cooling channels 15, passages 184 and openings of the inlet pipe 182 and openings of the outlet pipe 180. For example, four passages 184 are formed and each has an inlet pipe 182 and an outlet. The tube 180 is used to cool the cathode 28. The coolant can enter from a coolant inlet 173 to an inlet plenum 172, and the inlet plenum 172 is connected to a pair of opposite inlet plenums 176 and 178 (shown at 12c and 14). (In the figure). Two of the four long tubes 180 are each connected to 20 to the inlet plenum 176 or 178. Two of the four short tubes 182 are each connected to a separate passage 184 and to an outlet plenum 214 or 216, each outlet plenum 214 or 216 is connected to a Coolant outlet 175. The cathode substrate 210 may also be machined to include a central opening 218 for forming the cathode inner wall 163. 26 200425802 Material of the electrode assembly 160 and includes an external electrode (cathode) assembly 162 and an internal electrode (anode) The assembly 220 may be, for example, a stainless steel 30411 type, except that the anode 30 may be made of sintered tungsten or the above materials. The separation distance may be a significant 5 size and must be selected based on the coolant flow required to provide proper cooling between the separator 256 and the electrode walls 250, 254 through this point. According to a form of an embodiment of the present invention, the anode 30 can be cooled by a simple open-path cooling configuration, such as the coolant system formed by the anode 30 having a hollow interior 252 with the electrode 30 One of the inner walls 250 of one of the inner electrodes 10 (anode) 30, and then the other inner wall 254 of the inner electrode (anode) 30 flowing down may be assembled by inserting a heat pipe partition 256 into one of the inner walls 250, 254 in the hollow interior 252. To facilitate this effect. Heat transfer can be achieved by convection at the boundary between the inner walls 250, 254 of the electrode and a coolant passing between the separator 256 and the inner walls 250, 254. The applicant has determined the best thermal results that can be achieved in this application ', such as allowing the coolant to flow on the inner inner wall 254 and down the outer inner wall 250.

另一考量因素譬如係為薄壁(〇 〇1〇,,)隔板256,其根據 本發明的一實施例之一型態可分隔内電極(陽極)3〇冷卻系 統的入口,且其係自用於冷卻内電極30排出隔板256與外側 20内壁250之間的通道之熱交換器的排放通路270導往隔板 256與内側内壁254之間的通道。根據本發明的一實施例之 一型態,譬如為了避免屈曲,此隔板256譬如可能負荷有冷 卻劑壓力造成的拉力而非壓縮,且其係為剛才描述的流徑 之結果。此方案譬如亦能夠具有可利用隔板256的譬如304L 27 等材料的完全降伏強度之設計。申請人已經測試一種利用 此冷卻方式並具有最高37 lpm流率及&gt;80 psig進入壓力之 原型電極30。申請人相信,此設計可能譬如能夠承受大幅 超過1000 psig及更高之入口水壓以及對應於超過3千赫茲 及更高的源電漿放電重覆速率之熱負荷。 然而’根據本發明的一實施例之一型態,環狀通路可 能譬如需要高的熱傳係數,例如,暴露於冷卻劑的有限面 積譬如會需要很有效率的熱傳且因而需要高的熱傳係數。 並且’根據本發明的一型態,譬如内壁250、254上的較高 溫度譬如會需要以高壓來輸送高流率的冷卻劑以譬如抑制 冷卻劑的沸騰’特別是薄片或體塊沸騰而非核沸騰,這可 貫際地改善從内壁250、254至冷卻劑的熱傳。 根據本發明的一實施例之另一型態,申請人想見在電 極30的中空内部内使用一多孔金屬熱交換器。此實施例(未 圖示)中,譬如特別是在包含電極30的匝夾開口之梢部34區 域中,可譬如將一多孔金屬媒體例如藉由硬銲譬如結合至 電極30的内壁250、254。這譬如終會在陽極2〇上導致一大 型的延伸鰭片以供冷卻用。從内壁25〇、254進入此延伸的 多孔表面積之傳導性熱傳譬如可比橫越環狀通路的簡單壁 進入冷卻劑内之對流性熱傳更具有效率。延伸的多孔表面 積譬如則可具有-遠為更大的面積以自其將熱量排放至冷 卻劑中。結果譬如為使用更少冷卻劑且具有更好的熱傳。 此結構亦可在電極30的整體中空部分252中取代隔板256及 内壁250、254。纽金屬熱交換器之可能的缺陷譬如可能 200425802 係為橫越多孔媒體之高的固有壓降。在高的源重覆速率 時’這譬如會需要高的入口壓力且在硬銲結合部及只與冷 卻劑泵送相關聯的流隔板中導致大的機械應力,且其需要 檢討。另一可能的缺陷譬如係為由於進入冷卻劑的更有效 熱傳會放大橫越電極30壁溫度降低而造成之橫越電極30壁 的溫度降低,且其會產生橫越電極30的殼套壁之高應力負 荷。 較高的應力程度可能導致電極的鎢殼套壁之結構性失 效。另一設計的判別標準可能譬如係為譬如由於電極3〇在 10 迸發模式操作所造成之電極30殼套壁中的交替應力,其譬 如可具有與靜態應力負荷不同的結果。這譬如導致了電極 30材料需具有拉伸堅固性且亦具韋刃性之需求。譬如在不同 操作方法中,包括重覆速率、匝夾溫度、任務循環等因素, 入射在電極30上之熱通量分佈亦為譬如決定電極壽命之考 量因素。然而,申請人已經以最高達2千赫茲的重覆速率譬 如在一負極性組態中測試譬如得自Thermacore的多孔嫣電 極而無失效。根據本發明的一實施例之一型態的另一種可 能性譬如可使用譬如利用一譬如購自Porvair的多孔銅泡棉 製成之多孔銅質經冷卻電極30,其譬如可由放電機械加工 20 (“EDM”)機械加工成為對於根據本發明的實施例之應用有 用的幾何結構。根據本發明的一實施例之型態的另一種可 能性係譬如利用電鍍或離子熔合技術來採用均勻沉積至對 於硬銲選定的最佳硬銲厚度之銀。此途徑譬如可實現如同 上文對於内電極(陽極)30所述的多孔金屬冷卻之完全潛能。 29 5 根據本發明的一會竑加* &amp; 來實現高軌通量恕,譬如可利用微通路 、 令Ρ。根據此實施例,譬如可以高入口壓 力將冷卻送經過―系列小通道、㈣路。1_, 這些通道可料^騎形或長方形且具⑽2㈣歧小 的正體尺彳itt配置中通路表面積對於冷卻劑容積之比值 10 15 σ此疋有#且_似於目前用來冷卻雷射二極體及其他 高熱通量電子元件及χ力轉導體之技術,可彻此技術來 冷卻本發明的電極30。申請人已經以最高達2千赫茲的重覆 速率來測試原贿魏冷卻式電極30,並相信刊用此冷 卻技術達成遠為更高的重覆速率。然而,此_確實呈現 出k入σ至出口相對較高的壓降且亦可能在源部操作期間 於總成中導致應力,譬如將_相對較硬的微通路插入件硬 銲至-賴套陽極30的+”252内將可能譬如如同上述 般地導致陽極總成220中的額外束限及應力,在整體設計中 必須考慮此作用。 譬如第10至15圖所示,外電極(陰極)28可包括一譬如概 呈環形之陰極總成162。陰極28本身在陰極總成162内可具 有譬如面對内電極30且譬如從基底的〇19吋變動至上邊緣 的〇·46吋之間隙之15。圓錐形内表面163的形式。上邊緣可 20被一陰極蓋212覆蓋。外電極(陰極)28譬如可遠大於内電極 (陽極)30且因此較易冷卻。根據本發明的一實施例,外電極 28的侵蝕比起内電極30來說亦可能較不造成問題,因此材 料選擇及製造亦略為較簡單。因此,可不將此外電極(陰 極)28視為消耗品。 30 200425802 根據本發明的一實施例之一型態,外電極(陰極)28譬如 可由Glidcop®AL-15製成,其亦即一種得自〇MG金屬公司 (OMG Metals Inc·)的專用經氧化物散佈物加強的銅,根據 本發明的一型態,譬如基於其導熱性與導電性而選擇此材 5 料,且其亦譬如合併有良好的機械強度及合理的可機械加 工性。此Glidcop®外電極28譬如可硬銲至一譬如304L不雀秀 鋼基底210内。 基底210譬如可與具有第7圖所示的一DPP脈衝式功率 單元139部分之外電極28互為介面。申請人已經譬如利用一 10 鎳基合金將外電極28硬銲至基底210,此鎳基合金譬如是得 自摩根掛竭公司(Morgan Crucible Company pic)的 Nibsi®(鎳/硼/矽)、最近採用得自摩根坩堝公司的NIORO® 硬銲材料,且其亦用於内電極30之硬銲,如上述,亦如上 述對於内電極採用類似的硬銲製備及爐具程序。 15 如上述,相對於内電極30來說,由於外電極28具有較 大尺寸及使用一高導熱材料故簡化了冷卻的工作。相對較 大的開放通路水坑道184譬如可機械加工成Glidcop®外電 極28體部210,其可譬如經由譬如諸如硬銲至體部210中的 開口内之短管182所形成的316L管件加以供應及排放,且亦 20 連接至一入口歧管214及排放歧管216。根據本發明的一實 施例,譬如可提供四個或更多個此等坑道184以確保均勻的 冷卻劑流,因此在所有位置具有更均勻的冷卻。可排列譬 如入口充氣室214及出口充氣室216(更詳細地顯示於第14 圖)等入口及排放管件以譬如對於各坑道184具有類似的流 31 200425802 動阻力,因此使類似的冷卻劑量流經各者。根據本發明的 一型態,申請人預期具有高冷卻劑流率及充分背壓以防止 沸騰之開放的通路184如上述將譬如足以冷卻外電極28。然 而,如果需要則可譬如採用上述的多孔媒體或微通路冷卻。 5 根據本發明的一實施例之一型態,可譬如包括有一整 體式冷板170且其機械加工成304L陰極總成162的頂表面。 此冷板170的流動通路(更詳細地顯示於第16圖)可譬如包括 用於電極28之實際的入口歧管214及排放歧管216。可達成 此作用以譬如冷卻一可位於譬如電極總成160下方之脈衝 10 式功率輸出開關LS3(未圖示),並且亦譬如用以等化前往各 冷卻坑道182之流。譬如214、216等通路可譬如銑製至陰極 總成162頂部内且亦可譬如經由熔合熔接的板加以密封。 外電極28可由用於形成冷卻坑道184之冷卻通路壁所 形成,且可能已經將一用來密封冷卻劑坑道184的陰極蓋 15 212炖製至其頂端及陰極基底210。 陰極總成163可藉由螺絲231接合至陽極總成220且可 譬如藉由一重疊的中心絕緣體222彼此絕緣,此重疊的中心 絕緣體222譬如可由熱解性(pyr〇iitic)氮化硼或氧化鋁製成 且譬如沿内電極30的外壁呈軸向延伸且延伸一段無彈性體 2〇 電極絕緣體224,無彈性體電極絕緣體224譬如可由熱解性 氮化硼或氧化鋁製成且譬如可由一絕緣體扣夾242及其固 定螺絲244固持在位置中。可藉由一對無彈性體金屬c密封 環230在絕緣體224與陰極基底210之間提供密封,其中一者 位於絕緣體224與陰極基底210之間且一者位於絕緣體與陽 32 200425802 極總成220之間,而插入各別的相對溝槽中。 根據本發明的一實施例之另一型態,認為雜屑消減是 長效操作的DPP EUV光源之重要考量因素。根據本發明的 一實施例之一型態,一放電產生的電漿EUV光源之中心電 5極28譬如可由如上述一種高溫且可能具耐火性的材料製成 且亦可能譬如擁有強烈的磁透性。根據本發明的_實施例 之此型悲,由於電聚轟擊、表面融化或燒餘、表面濟騰等 造成自電極30侵蝕之雜屑譬如亦可能具有顯著磁性。根據 本發明的一型態,申請人可想見在譬如電漿與譬如收集器 10光學元件的位置之間的光徑中係產生譬如至少約50毫特斯 拉(“mT”)及譬如50 mT到1T範圍内之適度大的磁場。利用此 方式,譬如可使雜屑偏向,然後譬如藉由譬如排列在光徑 周邊之一適當放置的靜態磁鐵(未圖示)予以準永久性收 集。根據本發明的此實施例之一型態,此收集器磁場譬如 15可由電磁鐵產生,在此例中,譬如可在一再生循環期間掃 出雜屑,且在此期間譬如可將電磁鐵減能。一適當冷卻的 高溫而ί火磁性金屬譬如可為始。 根據本發_-實施例之另-型態’中請人想見利用 對於電極30、28的電流脈衝加以定型,以藉由在放電的磁 2〇壓縮階段使電流達到峰值而譬如在壓縮主動元件(電衆源) 時最佳地使用電流。根據此實施例的—型態,SSppM可譬 如在DPP DDPPM最後階段中包括—額相可飽和電感 器。-可能的最佳化波形譬如可在輪向縮減階段從一適度 電流開始、然後在徑向壓縮階段達到峰值。 33 200425802 申請人已經利用-種略為較接近第2圖的示意圖之電 極幾何結構來模擬此放電,此外,以1^而非譬如來達成 此模擬。然而,此模擬提供充分的模擬細節足以瞭解本發 明的一貫施例之型態的操作之動態過程。模擬中,利用申 5請人雇員目前可取得之氣體放電雷射產品的SSPPM來進行 譬如一放電模擬,對於最後階段壓縮頭可飽和電感器具有 6nH之電感,其約與可取得材料及幾何結構目前可達成者一 樣低,且提供橫越電極所可能之最快速放電,亦即放電脈 衝的最快速上升時間,此模擬顯示於第18圖中,其中加長 ίο時間尺度以供說明用。如第1圖所示,在首先使用12 1111電 感、且將一額外可飽和電感器切換成接通而快速達到6 nH 總電感之一類似模擬中,放電起初前往約2〇 kAmps並在退 回數個kAmps之前緩和地升高至約4〇KA,直到電感譬如達 到6 nH之點為止,此時根據此模擬發生約85 的快速 15尖凸、然後在約2〇1^内降低到〇。在放電的轴向縮減階段期 間,藉由橫越電極的高峰電容器,亦即在第18a圖的模擬中 從約50 ns到約240 ns,放電概括水平配置於外電極28的内 表面與内電極30的外表面之間,沿著内電極3〇略微往上增 大角度,直到抵達内電極30概括在内電極3〇梢部34上與凹 20卩曰的最下方延伸部相鄰之一區域為止。因此,其作用引發 了譬如82處的放電並將譬如go處的放電移往電極%梢部, 且需要較小電流來維持移行的放電。在徑向壓縮階段期 間,譬如第18a圖的模擬中240 ns與260 ns之間,當電漿形 成在電極26梢部34時,放電在前往電極26的流體流方面快 34 ,地增加’其譬如經由譬如用於限定電聚之快速增加的磁 π將顯著增量的動能快速轉移至電漿,譬如導致—較好的 阻夹幻。這以進—步的模擬顯示於第⑽圖中。較好的租夹 $ ”有數項有利性質’譬如使主動源氣體離子保持在阻夹内 更久,以譬如誘發更大能量轉移至離子,譬如導致自 32產生更多X射線。 伴隨著壓縮的增加,所輸送的電流之此形狀可譬如在 杈向縮減中允許具有比Ε夾形成期間的電流更大出高達3 ^5倍之電流,但整體來說,電極&amp;SSPPM的峰值電容器消 0政相同量的能量’因此在整體脈衝期間亦維持住電極3〇、 28中的熱能預算,與第18a圖模擬所示的習知放電並無不 同。習知的可飽和電感器譬如可包括在551&gt;1&gt;河139壓縮頭 電路中,而譬如具有目前習知可飽和電感的兩倍,例如第 18A圖的模擬所示之12 nH,且可依平常方式飽和。一譬如 15與習知可飽和電感器並聯以使並聯電感更小之額外的可飽 和電感器隨後可受到偏壓以飽和,譬如第18A圖的模擬所 示’而譬如增加了放電最後終端的放電電流,譬如第l8a圖 的模擬所示。申請人利用模擬軟體之電漿流體的模擬已缝 確認了所提出的驅動器組態之優點。 20 根據本發明的一實施例之另一型態,可能需要使用〜 譬如氙等源氣體來譬如產生一譬如13·5奈米等特定λ的 EUV光,但亦可夠高度地吸收相同的光而足以干擾到整體 的光產生輸出。因此,申請人可想見使用一對於理想λ的 所產生光較不具吸收性之譬如氬及氦等緩衝氣體,並且譬 35 200425802 如自EUV光產生容器來差異性蔣^ 移除綠氣體及缓衝氣體。根 據本發明的一實施例,可對於一味I — 风诸如氙等源氣體的較高分 子量特定地設定-渦輪栗(未圖示)之組態,同時相對於諸如 氬及氦等降低泵送能量。可孽如鞋+ Λ J 5如糟由更改諸如内部間隙、 5葉片角度與速度等栗的操作特徵且亦消除系的哈威克 (H〇lweck)(分子阻力)階段,來達成此作用。因此,可建置 渦輪分子杲的設計’使以相較於諸如以分子速度為基礎的 氮等具有遠為更低的分子量氣體,優先菜送譬如山气等較高 原子量(或依需要為分子量)的氣體。 10 5見在參照第15圖,顯示根據本發㈣一實施例之一雜 屬遮蔽器300。此雜屑遮蔽器300能夠簡化雜屑遮蔽器3〇〇的 製造並仍旎達成防止來自光源的雜屑抵達收集器鏡面之功 能性解決方案。根據本發明的此實施例,可採用經簡化的 製造技術來譬如製造雜屑遮敝器300,同時比諸如用來製造 15柱狀結構等部分之其他種提出的製造技術更加合乎成本效 益。製造結構及技術亦放寬了可藉以產生此具有簡化製造 過程的雜屑遮蔽器300之可能的材料系列。 根據本發明的此實施例之雜屑遮蔽器300設計譬如可 由共面層302構成’譬如可將共面層302排列成為可讓光子 20就像在一柱狀結構中般地從電漿源3 2發射且通往收集器 40。雜屑將需要領航經過這些層3〇2以抵達收集器4〇的鏡 面。將利用監視實際有多少雜屑能夠離開由最外層3〇2的一 外表面306(亦即對於電聚匝夾32的最外面)升)成之雜屬遮蔽 器300外表面,藉以決定出所需要的層302數。 36 200425802 如第15圖所示,各層302係由各別層3〇2的一外表面3〇6 與各別層302的一内表面308之間延伸之複數個光通道3〇4 構成。各層302的各別曲線型外表面3〇6可譬如具有一弧 316,其譬如具有繞著譬如位於電漿中心的焦點周圍之第一 5曲率半徑,此電漿中心譬如可能為相對於電極30的一固定 點,其中控制此電漿以大致對於從實際電漿的定位(譬如脈 衝至脈衝)所動態決定的一點之各放電加以定位,譬如位於 其重心。此弧316可能為一定心在焦點上之圓形的弧。各個 各別的内表面308可具有定心在相同焦點上之相同或相似 1〇的同心弧,差異在於依據層302厚度而具有較小的曲率半 ^ 表面為共面性之意義在於繞著兩條旋轉軸線的曲率譬 如在整體結構中可仍然相同,亦即從一層的外表面到一層 内表面到朝向匝夾32配置之下一層的外表面仍然相同。 各個各別層302的外表面306可譬如具有一弧318,譬如 形成定心在第一焦點上之橢圓形,其可與弧316所形成的 β 或具有用於形成孤316的圓形中心之同心圓中心相 重合。可链^ s如糟由收集器40所使用之收集器鏡面的形狀來 加以決定。 20 各光通道304可能在各層302中於外表面306與内表面 308之間具有均勻形狀 ’或朝向含有弧316及318之形狀的一 或兩中心呈推拔狀。 層音如可由譬如鈦或鎢等金屬、譬如Si〇2、氧化鋁α1〇2 〆 化敎專陶竟或财火性金屬、或是其他陶兗金屬組合 物所形成。 37 200425802 =據本發明的此實施例之另—型態在各層搬之間可 有間隙,如第15圖所示。各別的層302譬如可藉由可能 ^別層間的整體介面空間中對應於光通道綱四角各^ 接轉320或者藉由週期性分隔的連接器柱挪而彼此 寸接,如弟15圖所示。亦如第15圖所示,層地可分成分段, 譬如具有第15®㈣的整體尺寸或是諸如第15_示的分 段330之次分段^用此方式,譬如可製造出—完整旋轉實 心體使之配合在電Μ夾焦點32全部周圍或大致全部周 圍0 10 雜屬可I掉落至遮蔽器細底部而非累積在所提出設 計的孔中。雜屑移除譬如可以是添加的特性,譬如藉以讓 更換之間具有更長的間隔。 亦瞭解,雜屑遮蔽器300可譬如在各層302中或在相鄰 層302間的開口中(如果具有此等開口的話)沿著一弧316或 15 318譬如形成了只由相對側壁構成之開口 3〇4。亦即,通道 304不需有四個壁312而仍可提供足夠的雜屑困阻作用及健 全的結構,但譬如這將有利於製造及/或有利於具有身為圓 形的一部分及譬如身為橢圓形的一部分之一弧2=316,318 之雜屑遮蔽器300。 20 現在參照第16圖,顯示有關一雜屑遮蔽器400的製造及 結構之本發明的另一實施例。第16圖顯示一譬如用來製造 DPP或其他EUV雜屑遮蔽器之“失焦雷射機械加工’’技術的 範例,其譬如具有聚焦至一焦點之光傳輸通道,或具有一 共同焦點的推拔狀陣列結構之其他應用。 38 200425802 此雜屑遮蔽器400譬如可能需要指向一共同焦點402之 推拔狀通路。譬如可利用一未聚焦的雷射束以夠高的雷射 強度來進行雷射機械加工。為此,申請人已經發現,譬如 可在一格栅狀遮罩406後方利用一聚焦透鏡404藉以產生一 5 雜屬遮蔽器及其通道的正確形狀。第18圖的配置中,可譬 如利用申請人的受讓人之X LA的雙室式Μ Ο P A組態雷射加 工來提供進行失焦雷射機械加工之譬如夠高的雷射功率及 適度短的雷射波長。第16圖所示的一般建置可譬如包括一 譬如第18圖所示自右方入射的平行雷射束41〇(不一定需要 10全體平行)。雷射束410譬如可首先入射在可能身為格柵或 網目的遮罩4〇6上,譬如藉以產生正方形或圓形通路412。 可能由W或Mo製成的遮罩譬如可在面對雷射束410之側上 塗覆有一反射性塗層,譬如一鋁的薄膜用以增強反射性並 避免遮罩406被雷射束410劣化。遮罩410亦譬如可很輕微地 15 傾斜’以避免回反射至雷射放大器/振盪器内。並且,如果 網目(未圖示)由具有圓形橫剖面的線製成,可降輕回反射問 題。透鏡404或更概括來說聚焦光學裝置可譬如產生已經具 有所需要的推拔率之一陣列的收斂性小束414。 一工件420可譬如身為構成或定位成具有位於焦點402 20 的中心之一球形實心體的分段,可將此工件420放置在透鏡 404與雷射焦點4〇2之間的正確距離上。即使如果雷射束410 的強度譬如不足以一次即將整體雜屑遮蔽器4〇〇機械加 工’譬如利用一掃描橫越遮罩406之經聚焦的雷射束將可具 有所需要的效果。亦即遮罩406、404及工件420等整體建置 39 200425802 譬如可如第16圖所示在雷射束410前方側向地、垂直地移 動,且譬如隨後可連續地將通路機械加工。可譬如控制工 件整體表面上方的掃描使其比通路412鑽製更快,所以不會 因為部份完成的鑽製而在工件部分中誘發額外應力。為了 5 使掃描具有可複製性,譬如可藉由譬如用於驅動整體建置 404、406、420相對於雷射束的側向動作之壓電致動器來使 其機動化及/或加以控制。或者,可藉由譬如用於保存雷射 束的入射方向及雷射聚焦位置之致動器控制的偏向光學裝 置(未圖示),使雷射束掃描橫越透鏡404。可控制雷射束410 10 使其具有夠高的強度,故即使失焦時亦足以燒蝕工件,但 同時不會損傷透鏡404及反射遮罩406。因此,大部份案例 中,最適合採用譬如雷射束410的短(紫外線)波長。申請人 相信,譬如第16圖所示將遮罩406放置在透鏡404前方是更 好的方式,藉以避免來自遮罩406的雷射濺鍍材料入射在透 15 鏡上而損傷透鏡。濺鍍材料係時常發射朝向雷射光入射之 方向。另一種譬如提咼工件420上的雷射強度之選項可能係 譬如進行使用745奈米或772奈米的Ti -藍寶石雷射之毫微微 秒雷射機械加工,且譬如使其後續頻率分別增加成三倍或 四倍且然後譬如利用一KrF或ArF受激準分子雷射放電雷射 20 放大器來放大此脈衝。 根據本發明的一實施例之另一型態,可利用一電化反 應來實行雜屑移除。申請人想見可利用鎢在室溫下會直接 與氟F2或-含氟分子譬如nf3起反應以形成氣化鶴%之 作用。根據本發明的-實施例,可譬如合併源輸出與—諸 40 200425802 如氟或氣等_素氣體以譬如形成一金屬鹵化物,藉以從源 輸出移除了譬如來自鎢電極3〇之過多的鎢原子。—範例 中,可譬如在譬如出現反應性^素氣體下由不需要的雜屑 粒子譬如鎢原子、離子及叢集形成類似WF6或WC16等分子 5之反應,藉以形成一揮發性氣體。與在固體表面(譬如收集 器光學裝置)上具有高黏著機率的純鎢粒子構成強烈對 比,這些分子化合物在固體表面上具有很低的黏著機率因 此優先自容器泵除及移除。譬如插入從EUV電漿源所發射 的輸出光内之此揮發性氣體因此譬如係可提供一種可能使 10不需要的鎢原子與“洗除器,,鹵素氣體之間發生增加的原子 碰撞之環境。這隨後可譬如導致鎢原子與氣體合併以形成 一諸如氟化鎢WF0或氣化鎢WCl0等化合物且從容器加以 除。 σ 秒 15 2〇 根據本發明的一實施例之另一型態,可以多種不同方 式來增長電極壽命及/或降低更換成本。譬如可藉由將螺紋 連接部包括在電極外壁上及陽極總成22〇上,以使内電極 =成螺絲狀。可將電極30製成譬如被外部襞置連續地供 =,其譬如為一延伸經過容器22壁之配件且其可具有螺紋 二供隨著時間而磨耗的電極移動之用並提供一用於容器的 2密封之輯路徑。電咖可安裝在—具有對應螺紋的 筒上。電極30可以複數個電極取代,譬如將料複數個 、極排列成,列且燒烤以制放電脈衝或譬如逐—地燒 烤、或靜待未燒烤-段時間織放人放電電路内。可選擇 電極30的形狀以利具有更長壽命。可利賴電冷卻來代替 41 水冷。 現在參照第17A至Η®,顯示根據本發明的_實施例之 另一雜屑遮蔽器。第17Α圖顯示根據本發明的一實施例之型 心的雜屬遮蔽器45〇之立體圖。雜屑遮蔽器柳可包含一具 5有-開口之安裝環452,此開口界定一譬如在從一位於焦點 的電沒源擴展之光的一球型表面一部分上方延伸且覆蓋住 s如近似1至2球面度之收集開孔。在開口中心可具有一較 454,較454具有包含槽455之側壁且譬如朝向焦點呈推拔 狀。女裝環452亦可具有槽453(如第17C圖所示)。 1〇 複數個譬如約0·25公分厚之薄型長縛片456可分別在 安裝環452或轂454中接合式安裝至槽奶及/或奶。請瞭 解,可能只在安裝環452及轂454的一者或另一者中需要 槽,及/或槽可能是複數個短槽而非如第17a及17D圖所示延 伸於轂454長度之槽,且可結合特定的長鰭片456以譬如特 15別定位在轂454周圍,亦即各長鰭片456可具有一或多個沿 轂454推拔部外表面的半徑而垂直位移之特定的槽,其内可 接合一特定的長鰭片456且只可接合該長鰭片456。同理對 於女裝壞452上之槽453亦成立。 在長縛片456之間’根據本發明的一實施例之一型態, 20譬如形成一群組諸如五個鰭片且其由譬如兩個長鰭片 456、一譬如位於相鄰兩個長鰭片456之間的中間鰭片458、 及兩短鰭片470所構成,其中各短鰭片470介於中間鰭片458 與相鄰長鰭片456之間。 如第17E圖更詳細地顯示,長鰭片456可具有一中間鰭 42 200425802 片籤片接收槽457及一短鰭片籤片接收槽459。然後,中間 *鰭片可如第17圖所示具有一長鰭片460,長鰭片460可譬如 接合一相鄰長鰭片456上之一各別的中間籤片接收槽457。 並且,譬如可在中間鰭片458與相鄰長鰭片456之間安裝有 5 一對短鰭片470。各短鰭片470可譬如具有一短鰭片籤片, 且短鰭片籤片可譬如接合式配合在一各別的相鄰長鰭片 456中之一各別的短鰭片籤片接收槽459内。中間鰭片458及 短鰭片470各亦可分別具有譬如分隔器/加強鰭片46〇a、472a 且其譬如可依照情形而倚靠抵住相鄰的各別中間鰭片458 10或長鰭片454。可看出,籤片460、460a、472、472a可譬如 沿著半徑延伸至譬如位於電漿匝夾32中心之雜屑遮蔽器的 焦點,而不會阻擋自匝夾32發射及穿過雜屑遮蔽器45〇之任 何顯著光量。如第17B圖的俯視圖所示,可看見籤片46〇、 460a、472、472a沿著各別半徑延伸至焦點。 15 雜屑遮蔽器450可具有分別被螺絲486及490固持在安 裝環上的位置中之一安裝環頂部鎖定環484及一安裝環底 部鎖疋環488 ’故不論槽453是否存在於安裝環452上均譬如 將各別鰭片454、456及470的安裝環面對側固持至安裝環 452。同樣地,轂454可具有一譬如可被一鎖定板螺帽4幻及 20 一底部鎖定螺帽4幻固持在位置中之頂部鎖定板48〇。 請瞭解,操作時,諸如〇·25公分厚的薄型鰭片456、 458、47〇可提供用來收集錢覆在鰭片A%、458、47味面上 的雜屑之作用,而互鎖籤片46〇、4?2及分隔器籤片牝㈨、 472a可在結構群組中加強及均勻地分隔鰭片456、牦8及4川 43 200425802 並防1如由於雜屬遮蔽器彻的熱性暴露而造成換屈。 根才本發月的-貫施例之另—型態,已知可使用金屬 化合物作為放電產生的電漿來源且此粉末形式的諸如 錫等金屬化合物可能是輪送用以形成電漿的來源之可靠方 5法。然而,對於輸送正確數量的此材料之可靠方法,申請 人已經發現此方法。根據本發明的-實施例之-«,申 請人提出提供譬如具有概括盡量地小且譬如具有m忖左 右直徑的粒子之粉末形式的金屬粒子。藉由將譬如錫等粉 末狀化CT物人人-脈衝電漿放電所使用之—氣體給料部 10内’可使私末輸送至電聚形成部位。給料部亦即載體氣體 譬如可能是-種如氖等譬如只具有載體作用之無害氣體, 或者譬如可能是-種亦有助於形成電漿及/或引發電漿放 電的朋潰之諸如氙等有效氣體。譬如將錫譬如霧化至給料 内之方法譬如可包括一種使給料氣體穿過或位於一數量的 15諸如錫等粉末狀金屬上方之方法,此粉末狀金屬譬如可由 一壓電致動器加以攪動且譬如加以搖晃而足以使細微的金 屬粉末變成在給料氣體流中經由氣體傳播、然後譬如經由 一中空陽極導引至電漿形成部位。 可瞭解利用此方式以譬如每單位時間的特定密度將一 20 經精密計量的數量之粉末狀材料插入給料氣流内,可依需 要譬如藉由調節搜動量(例如經由調節施加至壓電致動器 的電壓)來調節此數量。亦瞭解,也可藉由修改通過受撥動 粉末狀材料的給料氣流率來施加控制。可實行調節以孽如 限制雜屑形成於電漿中。亦可利用週期性^斷給料氣流(孽 44 200425802 如利用一交叉流幾何結構例如經由週期性注射一純給料氣 流而4如無任何插入材料)藉以實行調節。並且,譬如,如 果使用較大粒子,可譬如利用一網目來實行雜屑消減,此 網目的孔可防止超過特定選定尺寸的粒子給料氣體通過。 5 並不認為本發明的上述實施例是本申請案所揭露之本 發明僅有的實施例,且這些實施例可作出熟習該技術與其 專效物者所瞭解之許多變化及修改,而仍位於申請專利範 圍的範疇内,所申請的本發明範圍只被申請專利範圍加以 限制。 ίο 【圖式簡單·說^明】 第1圖顯示一放電產生的電漿EUV(軟x射線)光源及此 系統的一實施例之主要組件的示意圖; 第2圖顯示—用於產生Dpp EUV光之電極的—實施例 之示意圖; 15 第3圖顯示—用於EUV光源之譬如適可自一光產生電 漿收集一發射圓錐中的光之收集器系統的—實施例; 第4圖顯示示意第3圖所示的—收集器的實施例之入射 操作的掠射角之橫剖視圖; 第5圖顯示本發明的-實施例,其包括根據本發明的— 20實施例之一電極更換系統; 第6圖顯示第4圖的實施例之近寫圖; 第7圖顯示第5及6_實施例,其中具有—適於更換電 極之閘閥密封機構; 、 第8圖顯示根據本發明的一實施例之—用來製造可有 45 200425802 效用於DPP之電極中的材料之程序的示意圖; 第9圖顯示根據本發明的一實施例之一中心電極(陽極) 的橫剖視圖; 第10圖顯示根據本發明的一實施例之一電極總成的立 5 體剖切圖; 第11圖顯示第10圖所示的電極總成的一部分及第9圖 所示的中心電極(陽極)之近寫立體剖切圖; 第12圖顯示第10及11圖所示的電極總成之俯視圖; 第12a至c圖顯示第10至12圖的電極總成之橫剖視圖, 10 其中剖面沿著第12圖的線A-A、B-B及C-C所取; 第13圖顯示第10至12c圖的電極總成之橫剖視圖,其中 包括一中心電極(陽極)總成; 第14圖顯示第10至13圖的總成之一冷板部分,其中顯 示根據本發明的一實施例之冷卻通路; 15 第15圖顯示根據本發明的一實施例之〜雜屑遮蔽器的 立體圖; 第16圖顯示根據本發明的一實施例之〜用於製造雜屑 遮蔽器的程序之示意圖; 第17A至Η圖顯示根據本發明的一實施例之另〆雜屑 20 遮蔽器;及 第18Α及18Β圖顯示根據本發明的一實施例的蜇態產 生一電漿匝夾之模擬模型。 46 200425802 【圖式之主要元件代表符號表】 20…放電產生的電漿(“DPP”) 104、104’…限制射線 EUV及軟X射線光源 22···真空容器(殼體) 24···大型真空室(放電室) 26.. .金屬電極 28.. .外電極 30·.·内電極(陽極) 32.. .高密度電漿匝夾 34.. .電極梢部 36、300、400、450…雜屑遮蔽器 40.. .收集器 42.. .中間焦點 50.. .頻譜純度濾器 60.. .源輸送管 70.. .絕緣體 82、84·.·磁場 90…收集器轂 92.. .收集器轂延伸部 94.. .徑向支架 100.. .徑向收集器減阻物 102…殼套 102a…第一殼套部分 102b…第二殼套部分 104”、104’”…部分光射線 106.. .接合部 122·.·伸縮節 126.. .密封凸緣 130…閘閥 132…室壁 134…凸緣 136.. .可更換式密封表面 139.. .DPP脈衝式功率單元,固 態脈衝功率模組(SSPPM) 140.. .DPP換向器 142.. .BN 粒子 150、208、306···外表面 160.. .電極總成 162.. .外電極(陰極)總成 163.. .陰極内壁 164、312···壁 168…安裝螺絲 170.. .圓形冷板 172、176、178…入口充氣室 173…冷卻劑入口 174、184···冷卻通路 47 200425802 175…冷卻劑出口 180···出口管 182…入口管 184…開放通路水坑道 206…預離子化器 210…外電極(陰極)基底 212…陰極蓋 214···入口歧管 216…排放歧管 218…中央開口 220…内電極(陽極)總成 222…中心絕緣體 224…無彈性體電極絕緣體 230…無彈性體金屬C密封壤 231、486、490···螺絲 242…絕緣體扣夾 244…固定螺絲 250、254…電極内壁 252···鶴殼套陽極的中空部 256···熱管隔板 270…熱父換器的排放通路 302…共面層 304…光通道 308…内表面 316、318 …弧 402…共同焦點 404…聚焦透鏡 406…格栅狀遮罩 410.··雷射束 412···正方形或圓形通路 420···工件 452…安裝環 453、455···槽 454···轂 456···薄型長·鰭片 457···中間籤片接收槽 458···薄型鰭片(中間鰭片) 459···短鰭片籤片接收槽 460、472…互鎖籤片 460a、472a…分隔器/加強鰭片 470···短鰭片 480…頂部鎖定板 482…鎖定板螺帽 483…底部鎖定螺帽 484…安裝環頂部鎖定環 488…安裝環底部鎖定環 λ…光的波長 48Another consideration is, for example, thin-walled (0010, , ) Partition 256, According to an embodiment of the present invention, the internal electrode (anode) 30 cooling system can be separated from the entrance of the internal electrode (anode) 30 form, And it is from the exhaust passage 270 of the heat exchanger for cooling the passage between the internal electrode 30 to discharge the separator 256 and the inner wall 250 of the outside 20 to the passage between the separator 256 and the inner inner wall 254. According to a form of an embodiment of the present invention, For example, to avoid buckling, This partition 256 may, for example, be loaded with a tensile force instead of compression due to the pressure of the refrigerant, And it is the result of the flow path just described. This solution can also have, for example, a design that can fully use the material of the spacer 256 such as 304L 27 to reduce the strength. Applicants have tested a method utilizing this cooling method with a maximum flow rate of 37 lpm and &gt; Prototype electrode 30 with 80 psig in pressure. The applicant believes that This design may, for example, be able to withstand inlet water pressures significantly in excess of 1000 psig and higher and thermal loads corresponding to source plasma discharge repetition rates in excess of 3 kHz and higher.  However, according to one embodiment of the present invention, An annular path may, for example, require a high heat transfer coefficient, E.g, The limited area exposed to the coolant, for example, may require efficient heat transfer and thus a high heat transfer coefficient.  And ’according to a form of the invention, Such as inner wall 250, The higher temperature above 254, for example, would require high pressure to deliver a high flow rate coolant to, for example, suppress the boiling of the coolant ’, especially flake or bulk boiling, not nuclear boiling, This can consistently improve from the inner wall 250, 254 Heat transfer to coolant.  According to another aspect of an embodiment of the present invention, The applicant wants to see the use of a porous metal heat exchanger in the hollow interior of the electrode 30. In this embodiment (not shown), For example, particularly in the region 34 of the tip portion of the turn clamp opening containing the electrode 30, For example, a porous metal medium may be bonded to the inner wall 250 of the electrode 30, such as by brazing, 254. This, for example, will eventually lead to a large extended fin on the anode 20 for cooling. From the inner wall 25〇, 254 Conductive heat transfer into this extended porous surface area, for example, can be more efficient than convective heat transfer across a simple wall into a coolant passage into the coolant. The extended porous surface area may, for example, have a much larger area to discharge heat into the coolant therefrom. The result is, for example, the use of less coolant and better heat transfer.  This structure can also replace the separator 256 and the inner wall 250 in the entire hollow portion 252 of the electrode 30. 254. Possible disadvantages of New Zealand metal heat exchangers are, for example, 200425802, which is a high inherent pressure drop across porous media. At high source repetition rates, this, for example, would require high inlet pressure and cause large mechanical stresses in the brazed joints and flow baffles that are only associated with coolant pumping, And it needs to be reviewed. Another possible drawback is, for example, the decrease in temperature across the wall of the electrode 30 due to more efficient heat transfer into the coolant, which will magnify the decrease in temperature across the wall of the electrode 30, And it will generate a high stress load across the shell wall of the electrode 30.  Higher stress levels may cause structural failure of the tungsten shell of the electrode. Another design criterion may be, for example, the alternating stress in the casing wall of the electrode 30 caused by the operation of the electrode 30 in the 10 burst mode, This may have, for example, a different result from the static stress load. This, for example, has led to a demand for the material of the electrode 30 to have tensile rigidity and also be sharp. For example, in different operating methods, Including repeat rate, Turn clamp temperature, Factors such as task cycling,  The heat flux distribution incident on the electrode 30 is also a factor that determines, for example, the life of the electrode. however, The applicant has tested porous electrodes, such as those obtained from Thermacore, at repeated rates of up to 2 kHz, such as in a negative polarity configuration, without failure. According to another possibility of one form of an embodiment of the present invention, for example, a porous copper cooled electrode 30 made of, for example, a porous copper foam such as that purchased from Porvair can be used. It can be machined, for example, from electrical discharge machining 20 ("EDM") to a geometry that is useful for applications according to embodiments of the present invention. Another possibility of a form according to an embodiment of the present invention is, for example, the use of electroplating or ion fusion technology to uniformly deposit silver to the optimal brazing thickness selected for brazing. This approach, for example, can realize the full potential of cooling of porous metals as described above for the internal electrode (anode) 30.  29 5 A moment in accordance with the present invention * &  To achieve high rail fluxes, For example, available micro-channels,  Let P. According to this embodiment, For example, high inlet pressure can be used to pass cooling through a series of small channels, Kushiro. 1_,  These channels are expected to be ridden or rectangular and have a small body size of 小 的 2㈣. In the itt configuration, the ratio of the surface area of the passage to the volume of the coolant is 10 15 σ Other high heat flux electronic components and χ force-conductor technology This technique can be followed to cool the electrode 30 of the present invention. The applicant has tested the original cooling electrode 30 at a repetition rate of up to 2 kHz, And I believe that the publication uses this cooling technology to achieve a much higher repeat rate. however, This _ does present a relatively high pressure drop from k in to σ and may also cause stress in the assembly during source operation, For example, the brazing of a relatively stiff microvia insert into the + "252 of the -Lai anode 30 may result in additional restraints and stresses in the anode assembly 220 as described above, This role must be considered in the overall design.  For example, as shown in Figures 10 to 15, The external electrode (cathode) 28 may include a cathode assembly 162, such as a generally annular shape. The cathode 28 itself may have within the cathode assembly 162, for example, a gap 15 facing the internal electrode 30 and varying from 019 inches of the substrate to 0.46 inches of the upper edge. In the form of a conical inner surface 163. The upper edge 20 may be covered by a cathode cover 212. The external electrode (cathode) 28 can be much larger than the internal electrode (anode) 30, for example, and is therefore easier to cool. According to an embodiment of the present invention, The erosion of the outer electrode 28 may also be less problematic than the inner electrode 30, Therefore, material selection and manufacturing are also slightly simpler. therefore, The other electrode (cathode) 28 may not be regarded as a consumable.  30 200425802 According to a form of an embodiment of the present invention, External electrode (cathode) 28 can be made of Glidcop® AL-15, for example, It is also a specialized oxide dispersion reinforced copper from OMG Metals Inc., According to a form of the invention, For example, this material is selected based on its thermal and electrical conductivity. And it also has good mechanical strength and reasonable machinability, for example. The Glidcop® outer electrode 28 can be brazed into, for example, a 304L stainless steel base 210.  The substrate 210 may interface with, for example, the outer electrode 28 having a portion of a DPP pulsed power unit 139 shown in FIG. The applicant has, for example, brazed the external electrode 28 to the substrate 210 using a nickel-based alloy, This nickel-based alloy is, for example, Nibsi® (nickel / boron / silicon) available from Morgan Crucible Company pic, Recently using NIORO® brazing material from Morgan Crucible, And it is also used for brazing of the internal electrode 30, As above, As mentioned above, a similar brazing preparation and stove procedure is used for the internal electrode.  15 As mentioned above, With respect to the internal electrode 30, Since the outer electrode 28 has a large size and uses a highly thermally conductive material, the cooling work is simplified. The relatively large open channel water tunnel 184 can be machined into Glidcop® outer electrode 28 body 210, It can be supplied and discharged, for example, via a 316L fitting such as a short tube 182 brazed into an opening in the body 210, It is also connected to an inlet manifold 214 and a discharge manifold 216. According to an embodiment of the present invention, For example, four or more such tunnels 184 may be provided to ensure uniform coolant flow, There is therefore more uniform cooling in all positions. The inlet and discharge fittings such as inlet plenum 214 and outlet plenum 216 (shown in more detail in Figure 14) can be arranged to have similar flow for each tunnel 184 31 200425802 dynamic resistance, A similar cooling amount is therefore passed through each. According to a form of the invention, The applicant anticipates that an open passage 184 with a high coolant flow rate and sufficient back pressure to prevent boiling will, for example, be sufficient to cool the external electrode 28 as described above. However, If necessary, for example, the aforementioned porous media or microchannel cooling can be used.  5 According to a form of an embodiment of the present invention, It may, for example, include a top surface of a monolithic cold plate 170 which is machined into a 304L cathode assembly 162.  The flow path of this cold plate 170 (shown in more detail in FIG. 16) may, for example, include an actual inlet manifold 214 and a discharge manifold 216 for the electrode 28. This effect can be achieved by, for example, cooling a pulse 10-type power output switch LS3 (not shown) which can be located below, for example, the electrode assembly 160, It is also used, for example, to equalize the flow to the cooling tunnels 182. Such as 214, Passages such as 216 may be milled into the top of cathode assembly 162, for example, and may be sealed, for example, by fusion-bonding plates.  The external electrode 28 may be formed of a cooling passage wall for forming a cooling tunnel 184, And, a cathode cover 15 212 for sealing the coolant tunnel 184 may have been stewed to the top end and the cathode base 210.  The cathode assembly 163 may be joined to the anode assembly 220 by screws 231 and may be insulated from each other, such as by an overlapping central insulator 222, The overlapping center insulator 222 may be made of, for example, pyrolyzed boron nitride or alumina, and may extend axially along the outer wall of the internal electrode 30 and extend a length of non-elastomeric body 20. The electrode insulator 224, The non-elastomeric electrode insulator 224 may be made of, for example, pyrolytic boron nitride or alumina and may be held in place by, for example, an insulator clip 242 and its fixing screw 244. A seal can be provided between the insulator 224 and the cathode substrate 210 by a pair of non-elastomeric metal c-rings 230. One is between the insulator 224 and the cathode substrate 210 and one is between the insulator and the anode 32 200425802 pole assembly 220, Instead, they are inserted into the respective opposite grooves.  According to another aspect of an embodiment of the present invention, Debris reduction is considered an important consideration for long-lasting DPP EUV light sources. According to a form of an embodiment of the present invention, The central electrode 5 of the plasma EUV light source generated by a discharge may be made of, for example, a high-temperature and possibly fire-resistant material as described above, and may also have strong magnetic permeability, for example. According to this embodiment of the present invention, Due to the bombardment of Surface melts or burns, Debris caused by surface erosion, for example, from the electrode 30 may also have significant magnetic properties. According to a form of the invention, The applicant can imagine that in the optical path between, for example, the plasma and the position of the optical element of the collector 10, for example, at least about 50 milliTesla ("mT") and moderately large in the range of 50 mT to 1T Magnetic field. With this approach, Such as biasing debris, It is then quasi-permanently collected, for example, by a suitably placed static magnet (not shown) arranged around one of the optical paths. According to a version of this embodiment of the present invention, The magnetic field of this collector, such as 15 can be generated by an electromagnet, In this example, For example, debris can be removed during a regeneration cycle, And during this period, for example, the electromagnet can be reduced in energy. A suitably cooled, high temperature, and ferromagnetic metal, for example, can be started.  According to the present invention, in another embodiment of the embodiment, one would like to see the use of the electrodes 30, 28 current pulses are shaped, In order to maximize the current during the magnetic compression phase of the discharge, the current is optimally used, for example, when compressing an active element (electric source). According to the -type of this embodiment, SSppM can include, for example, a front-phase saturable inductor in the final stage of DPP DDPPM. -Possible optimization waveforms, e.g. starting from a moderate current during wheel reduction phase, It then peaks during the radial compression phase.  33 200425802 The applicant has used a kind of electrode geometry that is slightly closer to the schematic diagram in Figure 2 to simulate this discharge, In addition, Use 1 ^ instead of, for example, this simulation. however, This simulation provides sufficient simulation details to understand the dynamics of the operation of a type of consistent embodiment of the invention. In the simulation, Use SSPPM of gas discharge laser products currently available to employees to perform, for example, a discharge simulation, For the final stage of the compression head saturable inductor has 6nH inductance, It is about as low as available materials and geometries are currently achievable, And provide the fastest discharge possible across the electrode, Which is the fastest rise time of the discharge pulse, This simulation is shown in Figure 18, The lengthened time scale is used for illustration. As shown in Figure 1, In the first use of 12 1111 inductors, And an additional saturable inductor is switched on to quickly reach one of the 6 nH total inductances in a similar simulation, The discharge initially traveled to about 20 kAmps and gently rose to about 40 KA before returning several kAmps, Until the inductance reaches, for example, 6 nH, At this time, about 15 rapid 15-spikes, It was then reduced to 0 in about 0.001%. During the axial reduction phase of the discharge, With a peak capacitor across the electrode, That is, in the simulation of Figure 18a, from about 50 ns to about 240 ns, The discharge is generally arranged horizontally between the inner surface of the outer electrode 28 and the outer surface of the inner electrode 30. Increase the angle slightly along the internal electrode 30, Until the inner electrode 30 reaches a region adjacent to the lowermost extension of the recess 20 on the tip 34 of the inner electrode 30. therefore, Its action causes a discharge at, for example, 82 and moves the discharge at, for example, go to the electrode tip.  And a smaller current is required to sustain the migration discharge. During the radial compression phase, For example, in the simulation in Figure 18a, between 240 ns and 260 ns, When the plasma is formed at the tip 34 of the electrode 26, The discharge is faster in the flow of fluid to the electrode 26 34, Ground increase ’which, for example, rapidly transfers a significant increase in kinetic energy to the plasma via, for example, a rapidly increasing magnetic π, which is used to limit electro-polymerization, For example lead to-better resistance to magic. This is shown in a further simulation in the first figure. A better rent clamp $ "has several beneficial properties," such as keeping active source gas ions in the clamp clamp longer, To, for example, induce greater energy transfer to ions, For example, it produces more X-rays from 32.  With the increase in compression, This shape of the delivered current may, for example, allow a current up to 3 ^ 5 times greater than the current during the formation of the E-clip in the reduction of the branching direction, But overall, Electrode &amp; The peak capacitor of SSPPM eliminates the same amount of energy ’, so the electrode is also maintained during the entire pulse.  Thermal budget in 28, It is not different from the conventional discharge shown in the simulation of Fig. 18a. A conventional saturable inductor may be included in, for example, 551 &gt; 1 &gt; River 139 compression head circuit, For example, it has twice the saturable inductance that is currently known. For example, 12 nH shown in the simulation of Figure 18A, And can be saturated in the usual way. For example, 15 an additional saturable inductor connected in parallel with a conventional saturable inductor to make the parallel inductance smaller can then be biased to saturate, For example, as shown in the simulation of FIG. 18A, and if the discharge current at the end of the discharge is increased, For example, as shown in the simulation of Fig. 18a. The applicant's simulation of plasma fluid using simulation software has confirmed the advantages of the proposed driver configuration.  20 According to another aspect of an embodiment of the present invention, It may be necessary to use a source gas such as xenon to generate an EUV light of a particular lambda such as 13.5 nm, But it can also absorb the same light to a high enough level to interfere with the overall light output. therefore, The applicant can imagine using a buffer gas, such as argon and helium, which is less absorbing for the light produced by the ideal λ, And for example, 35 200425802, such as generating a container from EUV light to remove the green gas and the buffer gas. According to an embodiment of the present invention, Can be set specifically for the higher molecular weight of blindly I—wind source gases such as xenon—the configuration of a turbo pump (not shown), It also reduces pumping energy relative to argon and helium. Can be as bad as shoes + Λ J 5 as bad by changes such as internal clearance,  5 blade angle and speed and other operating characteristics, and also eliminates the Hölweck (molecular resistance) stage of the system, To achieve this effect. therefore, The design of a buildable turbomolecular 杲 makes gas with a much lower molecular weight compared to, for example, nitrogen based on molecular velocity, Priority dishes include gases with a higher atomic weight (or molecular weight as needed) such as mountain gas.  10 5 See figure 15 with reference, A miscellaneous mask 300 according to an embodiment of the present invention is shown. The debris shield 300 can simplify the manufacture of the debris shield 300 and still achieve a functional solution to prevent debris from the light source from reaching the mirror surface of the collector. According to this embodiment of the invention, Simplified manufacturing techniques can be used, such as manufacturing debris mask 300, It is also more cost-effective than other proposed manufacturing techniques such as those used to make 15-column structures. The manufacturing structure and technology also relax the range of possible materials by which this debris shield 300 can be produced with a simplified manufacturing process.  The debris shield 300 according to this embodiment of the present invention is designed, for example, to be composed of a coplanar layer 302. 2 launches and leads to collector 40. Debris will need to navigate through these layers 302 to reach the mirror of the collector 40. It will be monitored how much debris can actually leave the outer surface of the heterogeneous masker 300 formed from an outer surface 306 of the outermost layer 302 (that is, the outermost of the electric polyclamp 32). This determines the number of layers 302 required.  36 200425802 As shown in Figure 15, Each layer 302 is composed of a plurality of optical channels 3104 extending between an outer surface 306 of the respective layer 302 and an inner surface 308 of the respective layer 302. The respective curved outer surface 306 of each layer 302 may, for example, have an arc 316, It has, for example, a first 5 radius of curvature around, for example, a focal point located at the center of the plasma, The plasma center may be, for example, a fixed point relative to the electrode 30, The plasma is controlled to locate the discharges at a point roughly determined by the actual plasma positioning (such as pulse to pulse). For example, at its center of gravity. This arc 316 may be a circular arc centered in focus. Each respective inner surface 308 may have a concentric arc of the same or similar 10 centered at the same focal point, The difference is that it has a small curvature half depending on the thickness of the layer 302. The meaning of the surface being coplanar is that the curvature around the two axes of rotation can still be the same, for example, in the overall structure, That is, from the outer surface of one layer to the inner surface of one layer to the outer surface of the next layer arranged toward the turn clamp 32 is still the same.  The outer surface 306 of each of the individual layers 302 may, for example, have an arc 318, For example, forming an oval centered on the first focus, It may coincide with β formed by the arc 316 or a concentric circle center having a circular center for forming the isolated 316. However, it is determined by the shape of the collector mirror used by the collector 40.  20 Each optical channel 304 may have a uniform shape between the outer surface 306 and the inner surface 308 in each layer 302 or it may be pushed toward one or both centers of the shape containing the arcs 316 and 318.  Layer sounds can be made of metals such as titanium or tungsten, For example, Si〇2 Aluminium oxide α1〇2 〆 Specialized ceramics or fire metal, Or it can be formed by other pottery metal composition.  37 200425802 = According to another aspect of this embodiment of the present invention-there may be gaps between layers, As shown in Figure 15. The individual layers 302 can be connected to each other by, for example, ^ connecting 320 corresponding to the four corners of the optical channel outline in the overall interface space between different layers, or by periodically separating connector posts, As shown in Figure 15. As shown in Figure 15, The layers can be divided into sections,  For example, it has the overall size of the 15th ㈣, or the sub-segments such as the sub-segment 330 shown in 15_ this way, For example, it can be manufactured—completely rotating the solid body to fit around all or substantially all of the focal point 32 of the clip 0. Miscellaneous materials can be dropped to the thin bottom of the mask instead of being accumulated in the holes of the proposed design. Debris removal can be an added feature, for example, For example, to allow longer intervals between replacements.  Also understand that The debris shield 300 may, for example, in each layer 302 or in an opening between adjacent layers 302 (if such openings are present) follow an arc 316 or 15 318, such as an opening formed only by the opposite side wall 304 . that is, The channel 304 does not need to have four walls 312 and still can provide sufficient debris trapping effect and a sound structure. But for example this would be good for manufacturing and / or for having a part that is circular and for example an arc that is part of an oval 2 = 316, 318 debris debris shield 300.  20 Referring now to Figure 16, Another embodiment of the present invention is shown regarding the manufacture and construction of a debris shield 400. Figure 16 shows an example of the "out-of-focus laser machining" 'technology used to make DPP or other EUV debris maskers, For example, it has a light transmission channel focused to a focal point, Or other applications of a push-like array structure with a common focus.  38 200425802 This debris shield 400 may require, for example, a push-like path pointing to a common focus 402. For example, an unfocused laser beam can be used for laser machining with a sufficiently high laser intensity. to this end, The applicant has found that For example, a focusing lens 404 can be used behind a grid-like mask 406 to generate the correct shape of a 5 miscellaneous mask and its channel. In the configuration of Figure 18, A two-chamber MIMO configuration laser processing using X LA of the applicant's assignee may be used to provide defocus laser machining such as a sufficiently high laser power and a moderately short laser wavelength. The general construction shown in Fig. 16 may include, for example, a parallel laser beam 41o incident from the right as shown in Fig. 18 (not necessarily 10 parallel in total). The laser beam 410, for example, may be first incident on a mask 406, which may be a grid or a mesh. For example, a square or circular via 412 is generated.  A mask that may be made of W or Mo, for example, may be coated with a reflective coating on the side facing the laser beam 410, For example, a thin film of aluminum is used to enhance reflectivity and prevent the mask 406 from being deteriorated by the laser beam 410. The mask 410, for example, can be tilted slightly 15 'to avoid back reflections into the laser amplifier / oscillator. and, If the mesh (not shown) is made of a line with a circular cross section, Reduces reflection problems. The lens 404 or more generally the focusing optics may, for example, produce a convergent beamlet 414 of an array that already has one of the required push rates.  A workpiece 420 may be, for example, a segment that is constructed or positioned to have a spherical solid body located at the center of the focal point 402 20, This workpiece 420 can be placed at the correct distance between the lens 404 and the laser focus 40. Even if the intensity of the laser beam 410 is not sufficient, for example, to mechanically process the entire debris masker 400 at one time, for example, a focused laser beam using a scan across the mask 406 will have the desired effect. I.e. mask 406, 404 and workpiece 420, etc. 39 200425802 For example, as shown in Figure 16, you can Move vertically, And, for example, the path can be subsequently machined continuously. For example, scanning over the entire surface of the workpiece can be controlled to make drilling faster than via 412. Therefore, no additional stress is induced in the part of the workpiece due to partially completed drilling. For 5 to make scanning reproducible, For example, it can be used to drive the overall building 404, 406, The 420 is motorized and / or controlled relative to the laser beam's side-acting piezoelectric actuator. or, A deflection optical device (not shown) that can be controlled by, for example, an actuator that holds the incident direction of the laser beam and the laser focus position, The laser beam is scanned across the lens 404. The laser beam 410 10 can be controlled to have a sufficiently high intensity, So it is enough to ablate the workpiece even when out of focus, However, the lens 404 and the reflection mask 406 are not damaged at the same time. therefore, In most cases, The short (ultraviolet) wavelength such as the laser beam 410 is most suitable. The applicant believes that For example, as shown in Figure 16, it is better to place the mask 406 in front of the lens 404. This prevents the laser spattering material from the shield 406 from entering the lens and damaging the lens. Sputtering materials are often emitted in the direction of the incident laser light. Another option, such as increasing the laser intensity on the workpiece 420, may be, for example, a femtosecond laser machining using a Ti-sapphire laser of 745 nm or 772 nm, And, for example, the subsequent frequency is tripled or quadrupled, respectively, and then the pulse is amplified, for example, using a KrF or ArF excimer laser discharge laser 20 amplifier.  According to another aspect of an embodiment of the present invention, Debris removal can be performed using an electrochemical reaction. The applicant wants to see that tungsten can be used to react directly with fluorine F2 or -fluorine-containing molecules such as nf3 at room temperature to form a gasification crane. According to the embodiment of the present invention, You can, for example, combine the output of the source with 40 200425802 such as fluorine or gas to form a metal halide, As a result, too many tungsten atoms, such as from the tungsten electrode 30, are removed from the source output. —In the example, For example, in the presence of reactive element gas, unwanted debris particles such as tungsten atoms, Ions and clusters form reactions similar to molecules 5 such as WF6 or WC16, Thereby a volatile gas is formed. In sharp contrast to pure tungsten particles with a high probability of adhesion on solid surfaces, such as collector optics, These molecular compounds have a very low probability of sticking on solid surfaces and are therefore preferentially pumped and removed from the container. For example, this volatile gas is inserted into the output light emitted from the EUV plasma source. Therefore, for example, it can provide a tungsten atom and , An environment where increased atomic collisions occur between halogen gases. This can then, for example, cause the tungsten atoms to merge with the gas to form a compound such as tungsten fluoride WF0 or gasified tungsten WCl0 and remove it from the container.  σ seconds 15 2〇 According to another aspect of an embodiment of the present invention, There are many different ways to increase electrode life and / or reduce replacement costs. For example, by including the screw connection on the outer wall of the electrode and the anode assembly 22, In order to make the inner electrode into a screw shape. The electrode 30 can be made, for example, continuously provided by an external device, It is, for example, an accessory extending through the wall of the container 22 and it may have threads for moving electrodes that wear away over time and provide a sealed path for the container. Electric coffee can be mounted on a cylinder with corresponding threads. The electrode 30 may be replaced by a plurality of electrodes, For example, multiple materials, The poles are arranged, And grilling to make a discharge pulse or, for example, one-by-one grilling, Or wait for the non-roasting-weaving in the discharge circuit for some time. The shape of the electrode 30 can be selected to have a longer life. Electric cooling can be used instead of 41 water cooling.  Referring now to sections 17A to Η®, Another debris mask according to the embodiment of the present invention is shown. Fig. 17A shows a perspective view of a miscellaneous mask 45o of a core according to an embodiment of the present invention. Debris concealer willows may include a 5-ring-opening mounting ring 452, This opening defines, for example, a collection opening extending over a portion of a spherical surface of light extending from a focally located electrical source and covering s, such as approximately 1 to 2 spheres. In the center of the opening there may be a 454, The lower portion 454 has a side wall including the groove 455 and is pushed toward the focus, for example. The women's ring 452 may also have a groove 453 (as shown in FIG. 17C).  10. A plurality of thin long binding pieces 456, for example, about 0.25 cm thick, can be joint-mounted to the trough milk and / or milk in the mounting ring 452 or the hub 454, respectively. Please understand. Grooves may only be needed in one or the other of the mounting ring 452 and the hub 454, And / or the grooves may be a plurality of short grooves instead of the grooves extending over the length of the hub 454 as shown in Figures 17a and 17D, And can be combined with a specific long fin 456 to position around the hub 454, such as That is, each long fin 456 may have one or more specific grooves that are vertically displaced along the radius of the outer surface of the pushing portion of the hub 454. A specific long fin 456 can be engaged therein and only the long fin 456 can be engaged. The same is true for the slot 453 on the women's dress 452.  Between the long binding pieces 456 'according to a form of an embodiment of the present invention,  20 For example, forming a group such as five fins and consisting of, for example, two long fins 456, For example, the intermediate fins 458 between two adjacent long fins 456,  And two short fins 470, Each short fin 470 is interposed between the middle fin 458 and an adjacent long fin 456.  As shown in Figure 17E in more detail, The long fin 456 may have a middle fin 42 200425802 chip receiving slot 457 and a short fin receiving slot 459. then, The middle * fin may have a long fin 460 as shown in FIG. 17, The long fins 460 may, for example, engage a respective middle patch receiving slot 457 on an adjacent long fin 456.  and, For example, five pairs of short fins 470 may be installed between the middle fins 458 and the adjacent long fins 456. Each short fin 470 may, for example, have a short fin patch,  In addition, the short fin tabs can be mated in one of the respective adjacent long fins 456 in a respective short fin tab receiving groove 459, for example. The intermediate fins 458 and the short fins 470 may each have, for example, a separator / reinforcement fin 46〇a, 472a, and it may, for example, lean against the respective middle fins 458 10 or long fins 454 depending on the circumstances. It can be seen that Lot 460, 460a, 472, 472a may, for example, extend along the radius to the focal point of a debris shield, such as at the center of the plasma turn clamp 32, It does not block any significant amount of light emitted from the turn clamp 32 and passing through the debris shield 45o. As shown in the top view of FIG. 17B, You can see lot 46〇,  460a, 472, 472a extends to the focal point along respective radii.  15 The debris shield 450 may have one of the positions held by the screws 486 and 490 on the mounting ring, respectively, a mounting ring top locking ring 484 and a mounting ring bottom locking ring 488 'so whether the groove 453 is present in the mounting ring 452 or not For example, the respective fins 454, The mounting rings of 456 and 470 are held to the mounting ring 452 side by side. Similarly, The hub 454 may have, for example, a top lock plate 48 that may be held in position by a lock plate nut 4 and a bottom lock nut 4.  Please understand, When operating, Such as thin fins 456 cm thick,  458, 47〇 can be used to collect money to cover the fins A%, 458, 47 the role of debris on the taste surface, And the interlocking tab 46〇, 4? 2 and separator tab 牝 ㈨,  472a can strengthen and evenly separate the fins in the structural group 456, 牦 8 and 4 Sichuan 43 200425802 And prevent 1 if the conversion due to the thermal exposure of the miscellaneous mask.  Rooted in this month's-implementation of the other-type, It is known that metal compounds can be used as the source of the plasma generated by the discharge, and metal compounds such as tin in this powder form may be a reliable method for the source of plasma to form the plasma. however, For a reliable method of delivering the correct amount of this material, The applicant has discovered this method. According to the embodiment of the present invention- «, The applicant proposes to provide metal particles in the form of a powder, for example, having particles that are as small as possible and for example having a diameter of m 忖. By powdering a powder such as tin, such as a CT object for everyone-pulsed plasma discharge-inside the gas feeder 10 ', the private particles can be transported to the formation site. The feeding part is also the carrier gas. For example, it may be a kind of harmless gas such as neon.  Or it may be, for example, an effective gas such as xenon that also helps to form a plasma and / or causes plasma discharge. For example, the method of atomizing tin into the feedstock may include, for example, a method of passing a feed gas through or over a quantity of 15 powdered metals such as tin, This powdered metal can be agitated by, for example, a piezoelectric actuator and shaken, for example, enough to turn a fine metal powder into a feed gas stream, propagate through the gas, It is then guided to the plasma formation site, for example, via a hollow anode.  It can be understood that in this way, a precisely measured quantity of powdered material is inserted into the feed gas stream at a specific density, such as per unit time, This amount can be adjusted as needed, for example, by adjusting the amount of search (for example, by adjusting the voltage applied to the piezoelectric actuator). Also understand that Control can also be applied by modifying the feed airflow rate of the powdered material through the dial. Adjustments can be implemented to limit the formation of debris in the plasma. It can also be adjusted by periodically cutting the feed gas flow (Nie 44 200425802, such as by using a cross-flow geometry, such as by periodically injecting a pure feed gas flow without any intervening material). and, for example, If larger particles are used, For example, a mesh can be used to reduce debris. This mesh opening prevents the passage of particle feed gas beyond a certain selected size.  5 does not consider the above embodiments of the present invention to be the only embodiments of the present invention disclosed in this application, And these embodiments can make many changes and modifications familiar to the technology and its specialists, While still within the scope of patent application, The scope of the claimed invention is limited only by the scope of the patent application.  ίο [Schematic simple explanation] Figure 1 shows a schematic diagram of a plasma EUV (soft x-ray) light source generated by a discharge and the main components of an embodiment of the system;  Figure 2 shows a schematic diagram of an embodiment of an electrode for generating Dpp EUV light;  15 FIG. 3 shows an embodiment of a collector system for an EUV light source, such as a light collector suitable for collecting light in an emission cone from a light generating plasma;  Figure 4 shows a cross-sectional view of a grazing angle illustrating the incident operation of the embodiment of the collector shown in Figure 3;  Fig. 5 shows an embodiment of the present invention, It includes an electrode replacement system according to one of the -20 embodiments of the present invention;  Figure 6 shows a close-up view of the embodiment of Figure 4;  Figure 7 shows the 5th and 6th embodiments, Which has-a gate valve sealing mechanism suitable for electrode replacement;  ,  FIG. 8 shows a schematic diagram of a process for manufacturing a material that can be used in DPP electrodes according to an embodiment of the present invention;  FIG. 9 shows a cross-sectional view of a center electrode (anode) according to an embodiment of the present invention; FIG.  FIG. 10 is a cross-sectional view of an electrode assembly according to an embodiment of the present invention;  FIG. 11 shows a part of the electrode assembly shown in FIG. 10 and a close-up perspective sectional view of the center electrode (anode) shown in FIG. 9;  Figure 12 shows a top view of the electrode assembly shown in Figures 10 and 11;  Figures 12a to c show cross-sectional views of the electrode assembly of Figures 10 to 12,  10 where the cross section is along line A-A in Figure 12, B-B and C-C;  Fig. 13 shows a cross-sectional view of the electrode assembly of Figs. 10 to 12c, It includes a center electrode (anode) assembly;  Figure 14 shows the cold plate section of one of the assemblies of Figures 10 to 13, It shows a cooling passage according to an embodiment of the invention;  15 FIG. 15 shows a perspective view of a debris shield according to an embodiment of the present invention;  FIG. 16 shows a schematic diagram of a procedure for manufacturing a debris shield according to an embodiment of the present invention;  17A to 17D show another debris 20 mask according to an embodiment of the present invention; And Figs. 18A and 18B show a simulation model of a plasma turn clamp generated in a pseudo state according to an embodiment of the present invention.  46 200425802 [Representative symbols for main components of the diagram] 20 ... Plasma ("DPP") generated by discharge 104, 104 ’... Limited EUV and soft X-ray light source 22 ··· Vacuum container (housing) 24 ··· Large vacuum chamber (discharge chamber) 26. .  . Metal electrode 28. .  . External electrode 30 ... · Inner electrode (anode) 32. .  . High-density plasma turn clamps 34. .  . Electrode tips 36, 300, 400, 450 ... Debris shield 40. .  . Collector 42. .  . Intermediate focus 50. .  . Spectrum Purity Filter 60. .  . Source duct 70. .  . Insulators 82, 84 ... Magnetic field 90 ... collector hub 92. .  . Collector hub extension 94. .  . Radial bracket 100. .  . Radial collector drag reducer 102 ... shell 102a ... first shell section 102b ... second shell section 104 ", 104 '" ... part of light rays 106. .  . Joint 122 ... Telescopic joints 126. .  . Sealing flange 130 ... gate valve 132 ... chamber wall 134 ... flange 136. .  . Replaceable sealing surface 139. .  . DPP pulsed power unit, solid state pulsed power module (SSPPM) 140. .  . DPP commutator 142. .  . BN particles 150, 208, 306 ... outer surface 160. .  . Electrode assembly 162. .  . External electrode (cathode) assembly 163. .  . Cathode inner wall 164, 312 ... wall 168 ... Mounting screw 170. .  . Circular cold plates 172, 176, 178 ... Inlet plenum 173 ... Coolant inlets 174, 184 ... Cooling passage 47 200425802 175 ... Coolant outlet 180 ... Outlet pipe 182 ... Inlet pipe 184 ... Open passage water tunnel 206 ... pre-ionizer 210 ... outer electrode (cathode) substrate 212 ... cathode cover 214 ... inlet manifold 216 ... emission manifold 218 ... central opening 220 ... inner electrode (anode) assembly 222 ... central insulator 224 ... inelastic Body electrode insulator 230 ... Non-elastomeric metal C sealing soil 231, 486, 490 ... Screws 242 ... Insulator clips 244 ... Fixing screws 250, 254 ... Electrode inner wall 252 ... Hollow part of the crane casing anode 256 ... · Heat pipe partition 270 ... Emission path 302 of the heat parent switch ... Coplanar layer 304 ... Light channel 308 ... Inner surface 316, 318 ... Arc 402 ... Common focus 404 ... Focus lens 406 ... Grating-like mask 410. Laser beam 412 ... Square or circular passage 420 ... Workpiece 452 ... Mounting ring 453, 455 ... Slot 454 ... Hub 456 ... Thin long fins 457 ... Middle sign Receiving slot 458 ··· Thin fin (middle fin) 459 ·· Short fin pick receiving slot 460,472 ... Interlocking tab 460a, 472a ... Divider / reinforced fin 470 ... Sheet 480 ... top lock plate 482 ... lock plate nut 483 ... bottom lock nut 484 ... mounting ring top lock ring 488 ... mounting ring bottom lock ring λ ... wavelength 48 of light

Claims (1)

200425802 拾、申請專利範圍: 1. 一種EUV源雜屑消減裝置,其操作性利用一包含一金屬 的深電衆匝炎電極而將形成電衆所導致之金屬雜屑加 以移除,該裝置包含:一金屬鹵素產生氣體,其包含一 5 鹵素氣體或含有鹵素的氣體且其將在該EUV源產生的 一輸出束之路徑中與該包含電極之金屬產生一金屬鹵 化物。 2. 如申請專利範圍第1項之裝置,進一步包含: 該電極的金屬包含鎢;該鹵素氣體或含有鹵素的氣 10 體包含氟; 該金屬鹵化物包含氟化鶴。 3. —種EUV源雜屑遮蔽器,其包含: 一第一雜屑遮蔽構件,其包含: 一第一曲線型表面,其相對於一第一旋轉 15 軸線具有一第一選定形狀; 一第二曲線型表面,其相對於該第一旋轉 軸線具有該第一選定形狀且分佈介於該第一 曲線型表面與該第一旋轉軸線之間;及 複數個對準的管狀開口,其位於該雜屑遮 20 蔽構件中用以連接該第一曲線型表面與該第 二曲線型表面,並具有一朝向該第一旋轉軸線 上的一焦點呈推拔狀之内部開口;及 一第二雜屑遮蔽構件,包含: 一第三曲線型表面,其相對於該第一旋轉 49 200425802 軸線具有該第一選定形狀且分佈介於該第二 曲線型表面與該旋轉軸線之間; 一第四曲線型表面,其相對於該旋轉軸線 具有該第一選定形狀且分佈介於該第三曲線 5 型表面與該第一旋轉軸線之間;及 複數個對準的管狀開口,其位於該雜屑遮 蔽構件中用以連接該第三曲線型表面與該第 四曲線型表面,並具有一朝向該第一旋轉軸線 上的一焦點呈推拔狀之内部開口。 10 4.如申請專利範圍第3項之裝置,進一步包含: 該第二及第三曲線型表面彼此抵靠。 5. 如申請專利範圍第3項之裝置,進一步包含: 該第二及第三曲線型表面彼此分開。 6. 如申請專利範圍第3項之裝置,進一步包含: 15 該第一、第二、第三及第四曲線型表面相對於一第 二旋轉轴線具有一第二形狀。 7. 如申請專利範圍第4項之裝置,進一步包含: 該第一、第二、第三及第四曲線型表面相對於一第 二旋轉軸線具有一第二形狀。 20 8.如申請專利範圍第5項之裝置,進一步包含: 該第一、第二、第三及第四曲線型表面相對於一第 二旋轉轴線具有一第二形狀。 9.如申請專利範圍第6項之裝置,進一步包含: 該第一形狀與該第二形狀相同。 50 200425802 10. 如申請專利範圍第7項之裝置,進一步包含: 該第一形狀與該第二形狀相同。 11. 如申請專利範圍第8項之裝置,進一步包含: 該第一形狀與該第二形狀相同。 5 12.如申請專利範圍第6項之裝置,進一步包含: 該第二形狀與該第一形狀不同。 13. 如申請專利範圍第7項之裝置,進一步包含: 該第二形狀與該第一形狀不同。 14. 如申請專利範圍第8項之裝置,進一步包含: 10 該第二形狀與該第一形狀不同。 15. 如申請專利範圍第3項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 15 曲率。 16. 如申請專利範圍第4項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 20 曲率。 17. 如申請專利範圍第5項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 51 200425802 曲率。 18. 如申請專利範圍第6項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 5 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 19. 如申請專利範圍第7項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 10 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 20. 如申請專利範圍第8項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 15 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 21. 如申請專利範圍第9項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 20 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 22. 如申請專利範圍第10項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 52 200425802 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 23. 如申請專利範圍第11項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 5 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 24. 如申請專利範圍第12項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 10 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 25. 如申請專利範圍第13項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 15 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 26. 如申請專利範圍第14項之裝置,進一步包含: 該等管狀開口包含位於沿著一第一方向的相鄰管 20 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 一旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 27. 如申請專利範圍第3項之裝置,進一步包含: 該等管狀開口包含位於沿著一第二方向的相鄰管 53 200425802 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 28. 如申請專利範圍第4項之裝置,進一步包含: 5 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 29. 如申請專利範圍第5項之裝置,進一步包含: 10 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 30. 如申請專利範圍第6項之裝置,進一步包含: 15 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉轴線之該第一、第二、第三及第四曲線型表面的 曲率。 31. 如申請專利範圍第7項之裝置,進一步包含: 20 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 32. 如申請專利範圍第8項之裝置,進一步包含: 54 200425802 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 5 33.如申請專利範圍第9項之裝置,進一步包含: 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 10 34.如申請專利範圍第10項之裝置,進一步包含: 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 15 35.如申請專利範圍第11項之裝置,進一步包含: 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 20 36.如申請專利範圍第12項之裝置,進一步包含: 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 曲率。 55 2004258 02 37. 如申請專利範圍第13項之裝置,進一步包含: 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 5 曲率。 38. 如申請專利範圍第14項之裝置,進一步包含 該等管狀開口包含位於沿著一第二方向的相鄰管 狀開口的相鄰壁部上之開壁式結構,而界定了繞著該第 二旋轉軸線之該第一、第二、第三及第四曲線型表面的 10 曲率。 39. —種包含一電極脈衝功率源之放電產生的電聚EUV 源,其包含: 一脈衝定型可飽和電感器,其包含在該脈衝功率模 組的室階級中而可操作以將輸送至該等放電電極的脈 15 衝波形加以定型,其中該放電脈衝在該放電的軸向跑出 階段期間由一適度電流及該放電的徑向壓縮階段期間 之一峰值所構成。 40. 如申請專利範圍第39項之裝置,進一步包含: 該放電脈衝的脈衝波形包含該徑向壓縮階段期間 20 之一電流流且其至少為該軸向跑出階段期間對於該等 電極的電流之三倍。 41. 如申請專利範圍第39項之裝置,進一步包含: 該放電脈衝的脈衝波形包含該徑向壓縮階段期間 之一電流流且其至少為該軸向跑出階段期間對於該等 56 200425802 電極的電流之三到五倍。 42·如申請專利範圍第4〇項之裝置,進一步包含· 該放電脈衝的脈衝波形包含該徑向壓3縮階段期間 之—電流流且其至少為該軸向跑出階段期間對於該等 5 電極的電流之三到五倍。 43·—種放電產生之電漿EUV光源,其包含: 一 EUV光產生室; 一源氣體,其包含在該產生室中; 一緩衝氣體’其包含在該室中具有比該源氣體更低 10 之分子量; 一渴輪分子泵,其具有一連接至該產生室之入口且 可操作以自該室優先泵送比該緩衝氣體更多之該源氣 體。 44·如申請專利範圍第43項之裝置,進一步包含··該渦輪分 15 子泵具有經過選擇可優先泵送較高分子量分子之内部 間隙、葉片角度及速度。 45.如申請專利範圍第43項之裝置,進一步包含: 該渦輪分子泵以所泵送氣體的原子速度為基礎來 優先栗送。 〇 46·如申請專利範圍第44項之裝置,進一步包含: 該渦輪分子泵以所泵送氣體的原子速度為基礎來 優先果送。 47·如申請專利範圍第43項之裝置,進一步包含: 3亥渴輪分子栗不包含分子阻力階級。 57 200425802 48. 如申請專利範圍第44項之裝置,進一步包含: 該渦輪分子泵不包含分子阻力階級。 49. 如申請專利範圍第45項之裝置,進一步包含: 該渦輪分子泵不包含分子阻力階級。 5 50.如申請專利範圍第46項之裝置,進一步包含: 該渦輪分子泵不包含分子阻力階級。 51. —種放電產生之電漿EUV光源,其包含: 一經調整的導電性電極,包含: 一差異性摻雜的陶瓷材料,其摻雜在一第一區 10 中以至少選擇導電性並摻雜在一第二區中以至少 選擇導熱性。 52. 如申請專利範圍第51項之裝置,進一步包含: 該第一區係位於該電極結構的外表面上或與其接 近。 15 53.如申請專利範圍第51項之裝置,進一步包含:200425802 Scope of patent application: 1. An EUV source debris reduction device, which is operable to remove a metal debris caused by the formation of an electric mass by using a deep electric mass turn electrode including a metal. The device includes : A metal halogen-generating gas containing a 5 halogen gas or a halogen-containing gas and which will generate a metal halide with the electrode-containing metal in the path of an output beam generated by the EUV source. 2. The device according to item 1 of the patent application scope, further comprising: the metal of the electrode contains tungsten; the halogen gas or the gas containing halogen 10 contains fluorine; and the metal halide contains fluoride crane. 3. An EUV source debris shield comprising: a first debris shielding member comprising: a first curved surface having a first selected shape relative to a first axis of rotation 15; a first A two curved surface having the first selected shape with respect to the first axis of rotation and distributed between the first curved surface and the first axis of rotation; and a plurality of aligned tubular openings located in the The debris shielding 20 shield member is used to connect the first curved surface and the second curved surface, and has an internal opening that is pushed toward a focus on the first rotation axis; and a second debris The debris shielding member includes: a third curved surface having the first selected shape relative to the first rotation 49 200425802 axis and distributed between the second curved surface and the rotation axis; a fourth curve A molding surface having the first selected shape with respect to the rotation axis and distributed between the third curve 5 type surface and the first rotation axis; and a plurality of aligned tubular openings located at Miscellaneous debris shield for shielding member connected to the third curved surface and the fourth curved surface and having a focal point on the first axis of rotation form a taper shape toward the inner opening. 10 4. The device of claim 3, further comprising: the second and third curved surfaces abut against each other. 5. The device of claim 3, further comprising: the second and third curved surfaces are separated from each other. 6. The device of claim 3, further comprising: 15 the first, second, third and fourth curved surfaces have a second shape relative to a second axis of rotation. 7. The device according to item 4 of the scope of patent application, further comprising: the first, second, third, and fourth curved surfaces have a second shape with respect to a second axis of rotation. 20 8. The device according to item 5 of the patent application scope, further comprising: the first, second, third, and fourth curved surfaces have a second shape with respect to a second axis of rotation. 9. The device according to item 6 of the patent application scope, further comprising: the first shape is the same as the second shape. 50 200425802 10. The device according to item 7 of the scope of patent application, further comprising: the first shape is the same as the second shape. 11. The device according to item 8 of the patent application scope, further comprising: the first shape is the same as the second shape. 5 12. The device according to item 6 of the patent application scope, further comprising: the second shape is different from the first shape. 13. The device according to item 7 of the patent application, further comprising: the second shape is different from the first shape. 14. The device according to item 8 of the patent application scope, further comprising: 10 The second shape is different from the first shape. 15. The device according to item 3 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a first direction, and define a structure surrounding the 15 curvatures of the first, second, third and fourth curved surfaces of the first axis of rotation. 16. The device according to item 4 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a first direction, and define a structure surrounding the 20 curvatures of the first, second, third and fourth curved surfaces of the first axis of rotation. 17. The device according to item 5 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a first direction, and define a structure surrounding the 51 200425802 curvature of the first, second, third, and fourth curved surfaces of the first axis of rotation. 18. The device according to item 6 of the scope of patent application, further comprising: the tubular openings include open-walled structures located on adjacent wall portions of adjacent tubular openings along a first direction, and define surrounding the Curvature of the first, second, third and fourth curved surface of the fifth rotation axis. 19. The device according to item 7 of the scope of patent application, further comprising: the tubular openings include an open-wall structure located on an adjacent wall portion of an adjacent tubular opening along a first direction, and define a structure surrounding the The curvature of the first, second, third, and fourth curved surfaces of the tenth rotation axis. 20. The device according to item 8 of the scope of patent application, further comprising: the tubular openings include an open-wall structure located on an adjacent wall portion of an adjacent tubular opening along a first direction, and define a structure surrounding the The curvature of the first, second, third, and fourth curved surfaces of the fifteenth rotation axis. 21. The device according to item 9 of the scope of patent application, further comprising: the tubular openings include an open-wall structure located on an adjacent wall portion of an adjacent tubular opening along a first direction, and define a structure surrounding the Curvature of the first, second, third and fourth curved surface of the 20th rotation axis. 22. The device according to item 10 of the patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a first direction, and define a structure surrounding the 52nd 200425802 The curvature of the first, second, third, and fourth curved surfaces of a rotation axis. 23. The device according to item 11 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of the 5-shaped openings of adjacent tubes along a first direction, and define a winding The curvature of the first, second, third, and fourth curved surfaces facing the first axis of rotation. 24. The device according to item 12 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of the 10-shaped openings of adjacent tubes along a first direction, and define a winding The curvature of the first, second, third, and fourth curved surfaces facing the first axis of rotation. 25. The device according to item 13 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of the 15-shaped openings of adjacent tubes along a first direction, and define a winding The curvature of the first, second, third, and fourth curved surfaces facing the first axis of rotation. 26. The device according to item 14 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent 20-shaped openings of adjacent tubes along a first direction, and define a winding The curvature of the first, second, third, and fourth curved surfaces facing the first axis of rotation. 27. If the device in the scope of the patent application item 3 further includes: the tubular openings include open-walled structures located on adjacent walls of the adjacent tube 53 200425802-like opening along a second direction, and define The curvature of the first, second, third, and fourth curved surfaces around the second axis of rotation. 28. The device according to item 4 of the scope of patent application, further comprising: 5 the tubular openings include open-walled structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 29. The device according to item 5 of the scope of patent application, further comprising: 10 the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 30. The device according to item 6 of the scope of patent application, further comprising: 15 The tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 31. The device according to item 7 of the scope of patent application, further comprising: 20 The tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 32. If the device in the scope of patent application No. 8 further includes: 54 200425802 The tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define a winding The curvature of the first, second, third, and fourth curved surfaces facing the second axis of rotation. 5 33. The device according to item 9 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 10 34. The device according to item 10 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 15 35. The device according to item 11 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 20 36. The device according to item 12 of the scope of patent application, further comprising: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define the surrounding The curvature of the first, second, third and fourth curved surfaces of the second axis of rotation. 55 2004258 02 37. The device according to item 13 of the patent application scope further includes: the tubular openings include open-wall structures located on adjacent wall portions of adjacent tubular openings along a second direction, and define 5 curvatures of the first, second, third and fourth curved surfaces around the second axis of rotation. 38. The device according to item 14 of the scope of patent application, further comprising that the tubular openings include an open-wall structure located on an adjacent wall portion of an adjacent tubular opening along a second direction, and define a circle around the first 10 curvatures of the first, second, third and fourth curved surfaces of the two rotation axes. 39. An electropolymeric EUV source comprising an electrode pulsed power source discharge, comprising: a pulsed saturable inductor included in a chamber stage of the pulsed power module and operable to deliver to the pulsed power module The pulse waveform of the equal discharge electrode is shaped, wherein the discharge pulse during the axial run-out phase of the discharge consists of a moderate current and a peak during the radial compression phase of the discharge. 40. The device of claim 39, further comprising: the pulse waveform of the discharge pulse includes a current of 20 during the radial compression phase and it is at least the current for the electrodes during the axial run-out phase Three times. 41. The device according to item 39 of the scope of patent application, further comprising: the pulse waveform of the discharge pulse includes a current flow during the radial compression phase and is at least the same for the 56 200425802 electrodes during the axial run-out phase. Three to five times the current. 42. The device according to item 40 of the scope of patent application, further comprising. The pulse waveform of the discharge pulse includes a current flow during the radial compression phase and at least the axial current during the axial run-out phase. Three to five times the current of the electrode. 43 · —A plasma EUV light source produced by a discharge, comprising: an EUV light generating chamber; a source gas contained in the generating chamber; a buffer gas' which is contained in the chamber and has a lower content than the source gas A molecular weight of 10; a thirsty-wheel molecular pump having an inlet connected to the production chamber and operable to preferentially pump more of the source gas from the chamber than the buffer gas. 44. The device according to item 43 of the scope of patent application, further comprising: the turbine sub-sub pump has an internal clearance, blade angle and speed that can be selected to preferentially pump higher molecular weight molecules. 45. The device according to item 43 of the scope of patent application, further comprising: the turbo-molecular pump is preferentially pumped based on the atomic velocity of the pumped gas. 46. The device according to item 44 of the scope of patent application, further comprising: the turbo molecular pump gives priority to delivery based on the atomic velocity of the gas being pumped. 47. The device according to item 43 of the scope of patent application, further comprising: 3 molecular thigh wheels do not include molecular resistance classes. 57 200425802 48. The device according to item 44 of the patent application, further comprising: The turbomolecular pump does not include a molecular resistance class. 49. The device of claim 45, further comprising: the turbomolecular pump does not include a molecular resistance stage. 5 50. The device of claim 46, further comprising: the turbomolecular pump does not include a molecular resistance stage. 51. A plasma EUV light source generated by a discharge, comprising: an adjusted conductive electrode comprising: a differentially doped ceramic material doped in a first region 10 to select at least conductivity and doped Doped in a second zone to select at least thermal conductivity. 52. The device of claim 51, further comprising: the first region is located on or near the outer surface of the electrode structure. 15 53. The device according to item 51 of the scope of patent application, further comprising: 該陶瓷材料為SiC且該摻雜物為BN。 54. 如申請專利範圍第52項之裝置,進一步包含: 該陶瓷材料為SiC且該掺雜物為BN。 55. 如申請專利範圍第51項之裝置,進一步包含: 20 該陶瓷材料為氧化鋁且該掺雜物為BN。 56. 如申請專利範圍第52項之裝置,進一步包含: 該陶瓷材料為氧化鋁且該摻雜物為BN。 57. 如申請專利範圍第51項之裝置,進一步包含: 該陶瓷材料為氧化鋁且該摻雜物為一金屬氧化物。 58 200425802 58.如申請專利範圍第娜之裝置,進—步包含: …由:喊材料為氧她域摻雜物為—金屬氧化物。 .°申晴專利範圍第57項之裝置,進_步包含: 該摻雜物為SiO或Ti02。 6〇.如中請專利範圍第58項之裝置,進—步包含: 該摻雜物為SiO或Ti02。 61.-種包含在—放電室内之放電產生的電細v光源,其 10 -電極總成,其包含-安裝在—可移式電極總成安 义座内之放電電極; 。-可擴展的韻元件,其連接至該可移式安裝座且 可才呆作=將該電極總成從—更換位置移至一操作位置; 15 在 、封機構’其可移式安裝在—密封機構殼體中且 可操作以當該可移式安裝座移至該更換位置時藉由從 -容置位置到―密封位置的運動來密封該放電室。 62·如申請專利範圍第61項之裝置,進一步包含: 該可擴展的密封元件為-伸縮節且機構為 一閘閥。 63·—種放電產生之電漿euv光源,其包含: 20 —收集H’其包含相對-電—失位置排列之複數 個嵌套狀殼套構件,以形成自該電聚&amp;失發射的EUV光 之入射反射器的掠射角;及 作以 一溫度控職構,其操作性連接至該”器且可操 調節該等各別殼套構件的溫度 59 200425802 關的幾何結構,以使來自該等各別殼套構件的入射反射 之掠射角達到最佳化。 64.如申請專利範圍第63項之裝置,進一步包含: 該溫度控制機構包含一加熱器。 5 65.如申請專利範圍第63項之裝置,進一步包含: 該溫度控制構件包含一熱量移除器。 66. 如申請專利範圍第63項之裝置,進一步包含: 各嵌套狀殼套構件,包含: 入射反射器元件的一第一掠射角,其收集自該 10 電漿匝夾發射的EUV光;及 入射反射器元件的一第二掠射角,其收集自該 入射反射器元件的第一掠射角發射之EUV光。 67. 如申請專利範圍第64項之裝置,進一步包含: 各嵌套狀殼套構件,包含: 15 入射反射器元件的一第一掠射角,其收集自該 電漿匝夾發射的EUV光;及 入射反射器元件的一第二掠射角,其收集自該 入射反射器元件的第一掠射角發射之EUV光。 68. 如申請專利範圍第65項之裝置,進一步包含: 20 各嵌套狀殼套構件,包含: 入射反射器元件的一第一掠射角,其收集自該 電漿匝夾發射的EUV光;及 入射反射器元件的一第二掠射角,其收集自該 入射反射器元件的第一掠射角發射之EUV光。 60 69· —種放電產生之電漿£1;¥光源,其包含: 一收集器,其包含相對一電漿匝夾位置排列之複數 個嵌套狀殼套構件,以形成自該電漿匝夾發射的Ευν光 之入射反射器的掠射角;及 一溫度控制機構,其操作性連接至該收集器且可操 作以機械式調整至少一個該等各別殼套構件以維持一 幾何結構使得來自該等各別殼套構件的入射反射之掠 射角達到最佳化。 70·如申請專利範圍第69項之裝置,進一步包含: 各後套狀殼套構件,包含: 入射反射器元件的一第一掠射角,其收集自該 電漿匝夾發射的EUV光; 入射反射器元件的一第二掠射角,其收集自該 入射反射器元件的第一掠射角發射之EUV光;及 15 ^ 該機械控制機構包含一第一調整裝置,該第一 調整裝置可操作性連接至該入射反射器元件的第 一掠射角及入射反射器元件的一第二掠射角。 71·如申請專利範圍第69項之裝置,進一步包含: 該機械控制機構包含一壓電致動器。 2〇 ?2·如申請專利範圍第70項之裝置,進一步包含: 該機械控制機構包含一壓電致動器。 73·如申請專利範圍第71項之裝置,進一步包含: 該壓電致動器包含一結合至各個各別殼套構件的 一外表面之生物形態壓電致動器。 61 200425802 74. 如申請專利範圍第72項之裝置,進一步包含: 該壓電致動器包含一結合至各個各別殼套構件的 一外表面之生物形態壓電致動器。 75. —種放電產生之電漿EUV光源,其包含: 5 一EUV光收集器,其具有複數個收集器,各該等收 集器包含一反射表面且其各具有一反向表面;及 一偏壓電壓源,其電性連接至各該等複數個反射 器。 76. 如申請專利範圍第75項之裝置,進一步包含: 10 一放電產生之電漿,其具有一電極性;及 選擇該偏壓電壓源的電壓使其具有與該電漿相反 的極性。 77. 如申請專利範圍第74項之裝置,進一步包含: 各反射器的該反向表面具有一經粗化光製。 15 78.如申請專利範圍第75項之裝置,進一步包含: 各反射器的該反向表面具有一經粗化光製。 79. —種用於製造一放電產生電漿EUV光源雜屑遮蔽器之 方法,其包含: 一高能輻照光源,其包含一工作束; 20 一遮罩構件,其位於該工作束的路徑中且可操作以 將該工作束分成複數個次工作束; 一聚焦光學裝置,其位於該等複數個次工作束的路 徑中且可操作以將該等複數個次工作束聚焦至一焦點; 一工件,其介於該聚焦光學裝置與焦點之間,其中 62 200425802 因此使該等複數個次工作束各在該工件中鑽製一對準 於該焦點且朝向該焦點呈推拔狀之孔。 80. 如申請專利範圍第79項之方法,進一步包含: 該工件包含具有與該焦點呈同心的一曲率半徑之 5 至少一表面。 81. —種放電產生之電漿EUV光源,其包含: 至少一電漿產生電極,其由一具有一中空内部之殼 套所形成; 一流界定構件,其位於該中空内部内沿著該中空内 10 部的一對相對内壁從一冷卻劑入口到一冷卻劑出口界 定一冷卻劑流徑。 82. 如申請專利範圍第81項之裝置,進一步包含: 該流界定構件包含一用於將該等相對的内壁互連 之多孔區。 15 83.如申請專利範圍第81項之裝置,進一步包含: 該流界定構件包含一薄壁式圓柱形構件,該薄壁式 圓柱形構件使其冷卻劑入口連接至該薄壁式圓柱形構 件與該中空内部的一内部内壁之間形成的通道且使其 冷卻劑出口連接至該薄壁式圓柱形構件與該中空内部 20 的外部内壁之間的一通道。 84. —種放電產生之電漿EUV光源,其包含: 至少一電極,其包含一具有高磁透性之材料而足以 使自該電極移除之該材料形式的雜屑能夠磁性偏向而 不沉積在一受保護的系統元件上。 63 200425802 85. —種EUV雜屑遮蔽器,其包含: 一安裝環,其具有一收集開口藉以界定一具有一焦 點之收集開孔; 一轂; 5 複數個大鰭片,其接合式安裝至該轂及該安裝環; 及 至少一中間鰭片,其安裝在相鄰的大鰭片之間且在 相鄰的大鰭片之間接合式安裝至該轂或該安裝環,並包 含至少一支撐籤片且其沿著一延伸經過焦點之半徑而 10 延伸且接合式安裝在至少一該等相鄰大鰭片上之一藏 片接收槽中。 86. 如申請專利範圍第85項之裝置,進一步包含: 該至少一中間鰭片包含一第一中間鰭片及一第二 中間鰭片,及; 15 至少一短鰭片,其在相鄰的中間鰭片之間接合式安 裝至該轂或該安裝環,並包含至少一支撐籤片且其沿著 一延伸經過焦點之半徑而延伸且接合式安裝在至少一 該等相鄰的中間鰭片上之一籤片接收槽中。 87. —種用於形成一放電產生之電漿之方法,其包含: 20 提供一作為用於粉末形式的金屬粒子形式產生的 放電之一源之金屬化合物,其中該等粒子包含在一給料 氣體中,藉由使該給料氣體穿過一數量受攪動的粉末狀 材料以將該等粒子放置在該給料氣體内。 64The ceramic material is SiC and the dopant is BN. 54. The device of claim 52, further comprising: the ceramic material is SiC and the dopant is BN. 55. The device of claim 51, further comprising: 20 the ceramic material is alumina and the dopant is BN. 56. The device of claim 52, further comprising: the ceramic material is alumina and the dopant is BN. 57. The device of claim 51, further comprising: the ceramic material is alumina and the dopant is a metal oxide. 58 200425802 58. If the device of the scope of patent application is Dana, the steps further include: ... by: the material is oxygen, and the dopant is-metal oxide. The device in the 57th patent scope of Shen Qing further includes: the dopant is SiO or Ti02. 60. The device according to item 58 of the patent application, further comprising: the dopant is SiO or Ti02. 61. A type of electric v light source included in a discharge chamber discharge, comprising an electrode assembly comprising a discharge electrode mounted in a movable electrode assembly seat; -An extensible rhyme element, which is connected to the removable mounting base and can only work = move the electrode assembly from the -replacement position to an operating position; A sealing mechanism housing is operable to seal the discharge cell by moving from the -accommodating position to the -sealing position when the removable mounting seat is moved to the replacement position. 62. The device according to item 61 of the scope of patent application, further comprising: the expandable sealing element is a telescopic joint and the mechanism is a gate valve. 63 · —a plasma-eUV light source generated by discharge, including: 20—collecting H ′, which includes a plurality of nested shell members arranged in opposite-electrical-missing positions to form the electropolymerized &amp; lost-emission The grazing angle of the incident reflector of the EUV light; and a temperature-controlled structure operatively connected to the device and operable to adjust the temperature of the respective shell components 59 200425802 geometry so that The grazing angles of the incident reflections from the respective shell members are optimized. 64. The device of scope 63 of the patent application, further comprising: The temperature control mechanism includes a heater. 5 65. If a patent is applied The device of the scope item 63 further includes: The temperature control member includes a heat remover. 66. The device of the scope of the patent application item 63 further comprises: each nested shell member, including: an incident reflector element A first glancing angle of the lens, which collects the EUV light emitted from the 10 plasma turn clip; and a second glancing angle of the incident reflector element, which collects the emission from the first glancing angle of the incident reflector element EUV 67. The device according to item 64 of the scope of patent application, further comprising: each nested shell member, including: 15 a first glancing angle of the incident reflector element, which is collected from the plasma turn-on EUV Light; and a second glancing angle of the incident reflector element, which collects EUV light emitted from the first glancing angle of the incident reflector element. 68. The device according to item 65 of the patent application, further comprising: 20 Each nested shell member includes: a first grazing angle of the incident reflector element, which collects EUV light emitted from the plasma turn clip; and a second grazing angle of the incident reflector element, which collects EUV light emitted from the first glancing angle of the incident reflector element. 60 69 · —A plasma generated by a discharge £ 1; ¥ light source, which includes: a collector, which includes an array arranged relative to a plasma turn clamp A plurality of nested shell members to form a grazing angle of the incident reflector of υν light emitted from the plasma turn clip; and a temperature control mechanism operatively connected to the collector and operable to mechanically Adjust at least one of this The individual shell members are waited to maintain a geometric structure so that the grazing angle of the incident reflection from the respective shell members is optimized. 70. The device of the 69th scope of the patent application, further comprising: The shell-shaped member includes: a first grazing angle of the incident reflector element, which collects EUV light emitted from the plasma turn clip; a second grazing angle of the incident reflector element, which collects the incident reflection The EUV light emitted by the first glancing angle of the reflector element; and 15 ^ the mechanical control mechanism includes a first adjustment device operatively connected to the first glancing angle and incidence of the incident reflector element A second glancing angle of the reflector element. 71. The device of claim 69, further comprising: the mechanical control mechanism includes a piezoelectric actuator. 20.2 The device according to item 70 of the scope of patent application, further comprising: the mechanical control mechanism includes a piezoelectric actuator. 73. The device of claim 71, further comprising: the piezoelectric actuator includes a biomorphic piezoelectric actuator coupled to an outer surface of each of the respective shell members. 61 200425802 74. The device according to item 72 of the scope of patent application, further comprising: the piezoelectric actuator includes a biomorphic piezoelectric actuator coupled to an outer surface of each respective shell member. 75. A plasma EUV light source generated by a discharge, comprising: 5 an EUV light collector having a plurality of collectors, each of which includes a reflective surface and each of which has a reverse surface; and a polarizer The voltage source is electrically connected to each of the plurality of reflectors. 76. The device according to item 75 of the scope of patent application, further comprising: 10 a plasma generated by a discharge, which has an electrical polarity; and the voltage of the bias voltage source is selected to have a polarity opposite to that of the plasma. 77. The device of claim 74, further comprising: the reverse surface of each reflector has a roughened light system. 15 78. The device of claim 75, further comprising: the reverse surface of each reflector has a roughened light system. 79. A method for manufacturing a debris-shielding device for a discharge-generating plasma EUV light source, comprising: a high-energy irradiation light source including a working beam; 20 a mask member located in a path of the working beam And is operable to divide the working beam into a plurality of sub-working beams; a focusing optical device which is located in the path of the plurality of sub-working beams and is operable to focus the plurality of sub-working beams to a focus; The workpiece is located between the focusing optics and the focus. 62 200425802 Therefore, each of the plurality of working beams is drilled in the workpiece with a hole aligned with the focus and pushed toward the focus. 80. The method of claim 79, further comprising: the workpiece includes at least one surface 5 having a radius of curvature that is concentric with the focal point. 81. A plasma EUV light source generated by a discharge, comprising: at least one plasma generating electrode formed by a shell having a hollow interior; a first-class defining member located within the hollow interior along the hollow interior A pair of 10 opposing inner walls define a coolant flow path from a coolant inlet to a coolant outlet. 82. The device of claim 81, further comprising: the flow defining member includes a porous region for interconnecting the opposite inner walls. 15 83. The device of claim 81, further comprising: the flow-defining member includes a thin-walled cylindrical member, the thin-walled cylindrical member having its coolant inlet connected to the thin-walled cylindrical member A passage formed with an inner inner wall of the hollow interior and its coolant outlet is connected to a passage between the thin-walled cylindrical member and the outer inner wall of the hollow interior 20. 84. A plasma EUV light source produced by a discharge, comprising: at least one electrode including a material having high magnetic permeability sufficient to allow debris in the form of the material removed from the electrode to be magnetically biased without depositing On a protected system element. 63 200425802 85. An EUV debris shield, comprising: a mounting ring having a collecting opening to define a collecting opening having a focal point; a hub; 5 a plurality of large fins, which are joint-mounted to The hub and the mounting ring; and at least one intermediate fin mounted between adjacent large fins and joint-mounted to the hub or the mounting ring between adjacent large fins and including at least one support The tabs are extended along a radius extending through the focal point and 10 are jointedly installed in at least one of the concealed chip receiving grooves on the adjacent large fins. 86. The device of claim 85, further comprising: the at least one intermediate fin includes a first intermediate fin and a second intermediate fin, and; 15 at least one short fin, which is adjacent to Intermediate fins are joint-mounted to the hub or the mounting ring, and include at least one support tab extending along a radius extending past the focal point and joint-mounted on at least one of the adjacent intermediate fins. A lot of picks in the receiving slot. 87. A method for forming a plasma generated by a discharge, comprising: 20 providing a metal compound as a source for the discharge generated in the form of metal particles in powder form, wherein the particles are contained in a feed gas The particles are placed in the feed gas by passing the feed gas through a quantity of agitated powdered material. 64
TW93104595A 2003-03-08 2004-02-24 Discharge produced plasma EUV light source TWI275325B (en)

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US10/384,967 US6904073B2 (en) 2001-01-29 2003-03-08 High power deep ultraviolet laser with long life optics
US10/409,254 US6972421B2 (en) 2000-06-09 2003-04-08 Extreme ultraviolet light source
US10/742,233 US7180081B2 (en) 2000-06-09 2003-12-18 Discharge produced plasma EUV light source

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