JP4637333B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP4637333B2
JP4637333B2 JP2000246511A JP2000246511A JP4637333B2 JP 4637333 B2 JP4637333 B2 JP 4637333B2 JP 2000246511 A JP2000246511 A JP 2000246511A JP 2000246511 A JP2000246511 A JP 2000246511A JP 4637333 B2 JP4637333 B2 JP 4637333B2
Authority
JP
Japan
Prior art keywords
island
film
semiconductor layer
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000246511A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001127305A5 (enExample
JP2001127305A (ja
Inventor
律子 河崎
健司 笠原
久 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000246511A priority Critical patent/JP4637333B2/ja
Publication of JP2001127305A publication Critical patent/JP2001127305A/ja
Publication of JP2001127305A5 publication Critical patent/JP2001127305A5/ja
Application granted granted Critical
Publication of JP4637333B2 publication Critical patent/JP4637333B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000246511A 1999-08-18 2000-08-15 半導体装置の作製方法 Expired - Fee Related JP4637333B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000246511A JP4637333B2 (ja) 1999-08-18 2000-08-15 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23128199 1999-08-18
JP11-231281 1999-08-18
JP2000246511A JP4637333B2 (ja) 1999-08-18 2000-08-15 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001127305A JP2001127305A (ja) 2001-05-11
JP2001127305A5 JP2001127305A5 (enExample) 2007-10-25
JP4637333B2 true JP4637333B2 (ja) 2011-02-23

Family

ID=26529786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000246511A Expired - Fee Related JP4637333B2 (ja) 1999-08-18 2000-08-15 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4637333B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4683761B2 (ja) * 2000-05-12 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4282985B2 (ja) 2002-12-27 2009-06-24 株式会社半導体エネルギー研究所 表示装置の作製方法
JP5307992B2 (ja) * 2007-07-27 2013-10-02 株式会社半導体エネルギー研究所 表示装置の生産方法
JPWO2012096364A1 (ja) * 2011-01-13 2014-06-09 学校法人 芝浦工業大学 基板上にＳｉおよび／またはＧｅの多結晶薄膜を形成する方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0350720A (ja) * 1989-07-18 1991-03-05 Seiko Epson Corp 多結晶シリコン再結晶化法
JP3355137B2 (ja) * 1993-02-10 2002-12-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2531383B2 (ja) * 1994-07-11 1996-09-04 ソニー株式会社 薄膜トランジスタの製法

Also Published As

Publication number Publication date
JP2001127305A (ja) 2001-05-11

Similar Documents

Publication Publication Date Title
US7476937B2 (en) Semiconductor device and method of fabricating the same
US9786787B2 (en) Semiconductor device and fabrication method thereof
US6624013B2 (en) Method for manufacturing a semiconductor device
JP4307635B2 (ja) 半導体装置の作製方法
US8227806B2 (en) Active matrix display in which LDD regions in the driver circuit and the storage capacitor in the pixel section have the same dopant concentration
US6515336B1 (en) Thin film transistors having tapered gate electrode and taped insulating film
JP4801790B2 (ja) 半導体装置
KR100736400B1 (ko) 반도체장치 및 그의 제조방법
JP4683696B2 (ja) 半導体装置の作製方法
JP4683761B2 (ja) 半導体装置の作製方法
JP4801241B2 (ja) 半導体装置およびその作製方法
JP4646368B2 (ja) 液晶表示装置の作製方法
JP4578618B2 (ja) 半導体装置及びその作製方法
JP4986333B2 (ja) 半導体装置の作製方法
JP4637333B2 (ja) 半導体装置の作製方法
JP4583654B2 (ja) 半導体装置の作製方法
JP3920065B2 (ja) 薄膜トランジスタの作製方法
JP3920066B2 (ja) 薄膜トランジスタの作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070815

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070815

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101005

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101007

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101018

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101101

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101116

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101124

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131203

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131203

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees