JP2001127305A5 - - Google Patents
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- Publication number
- JP2001127305A5 JP2001127305A5 JP2000246511A JP2000246511A JP2001127305A5 JP 2001127305 A5 JP2001127305 A5 JP 2001127305A5 JP 2000246511 A JP2000246511 A JP 2000246511A JP 2000246511 A JP2000246511 A JP 2000246511A JP 2001127305 A5 JP2001127305 A5 JP 2001127305A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000246511A JP4637333B2 (ja) | 1999-08-18 | 2000-08-15 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23128199 | 1999-08-18 | ||
| JP11-231281 | 1999-08-18 | ||
| JP2000246511A JP4637333B2 (ja) | 1999-08-18 | 2000-08-15 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001127305A JP2001127305A (ja) | 2001-05-11 |
| JP2001127305A5 true JP2001127305A5 (enExample) | 2007-10-25 |
| JP4637333B2 JP4637333B2 (ja) | 2011-02-23 |
Family
ID=26529786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000246511A Expired - Fee Related JP4637333B2 (ja) | 1999-08-18 | 2000-08-15 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4637333B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4683761B2 (ja) * | 2000-05-12 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4282985B2 (ja) | 2002-12-27 | 2009-06-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP5307992B2 (ja) * | 2007-07-27 | 2013-10-02 | 株式会社半導体エネルギー研究所 | 表示装置の生産方法 |
| JPWO2012096364A1 (ja) * | 2011-01-13 | 2014-06-09 | 学校法人 芝浦工業大学 | 基板上にＳｉおよび／またはＧｅの多結晶薄膜を形成する方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0350720A (ja) * | 1989-07-18 | 1991-03-05 | Seiko Epson Corp | 多結晶シリコン再結晶化法 |
| JP3355137B2 (ja) * | 1993-02-10 | 2002-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2531383B2 (ja) * | 1994-07-11 | 1996-09-04 | ソニー株式会社 | 薄膜トランジスタの製法 |
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2000
- 2000-08-15 JP JP2000246511A patent/JP4637333B2/ja not_active Expired - Fee Related