JP4628628B2 - 光起電性素子における製造エラーを局所化する装置 - Google Patents
光起電性素子における製造エラーを局所化する装置 Download PDFInfo
- Publication number
- JP4628628B2 JP4628628B2 JP2001529029A JP2001529029A JP4628628B2 JP 4628628 B2 JP4628628 B2 JP 4628628B2 JP 2001529029 A JP2001529029 A JP 2001529029A JP 2001529029 A JP2001529029 A JP 2001529029A JP 4628628 B2 JP4628628 B2 JP 4628628B2
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- electrode
- semiconductor substrate
- solar cell
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 12
- 238000011109 contamination Methods 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910000952 Be alloy Inorganic materials 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Light Receiving Elements (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1013204A NL1013204C2 (nl) | 1999-10-04 | 1999-10-04 | Inrichting voor het lokaliseren van productiefouten in een fotovolta´sch element. |
| NL1013204 | 1999-10-04 | ||
| PCT/NL2000/000691 WO2001026163A1 (en) | 1999-10-04 | 2000-09-27 | Apparatus for localizing production errors in a photovoltaic element |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003511861A JP2003511861A (ja) | 2003-03-25 |
| JP2003511861A5 JP2003511861A5 (enExample) | 2007-08-02 |
| JP4628628B2 true JP4628628B2 (ja) | 2011-02-09 |
Family
ID=19769986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001529029A Expired - Fee Related JP4628628B2 (ja) | 1999-10-04 | 2000-09-27 | 光起電性素子における製造エラーを局所化する装置 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6750662B1 (enExample) |
| EP (1) | EP1218946B1 (enExample) |
| JP (1) | JP4628628B2 (enExample) |
| AT (1) | ATE232016T1 (enExample) |
| AU (1) | AU772404B2 (enExample) |
| DE (1) | DE60001333T2 (enExample) |
| ES (1) | ES2193992T3 (enExample) |
| NL (1) | NL1013204C2 (enExample) |
| WO (1) | WO2001026163A1 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US7507903B2 (en) * | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
| US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
| US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
| US8076568B2 (en) * | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
| US7898053B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
| US7898054B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
| US7276724B2 (en) * | 2005-01-20 | 2007-10-02 | Nanosolar, Inc. | Series interconnected optoelectronic device module assembly |
| US7838868B2 (en) * | 2005-01-20 | 2010-11-23 | Nanosolar, Inc. | Optoelectronic architecture having compound conducting substrate |
| US7732229B2 (en) * | 2004-09-18 | 2010-06-08 | Nanosolar, Inc. | Formation of solar cells with conductive barrier layers and foil substrates |
| US8927315B1 (en) | 2005-01-20 | 2015-01-06 | Aeris Capital Sustainable Ip Ltd. | High-throughput assembly of series interconnected solar cells |
| DE102005040010A1 (de) * | 2005-08-23 | 2007-03-15 | Rwe Schott Solar Gmbh | Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element |
| US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| EP2137543B1 (en) | 2007-04-19 | 2012-02-08 | Oerlikon Solar AG, Trübbach | Test equipment for automated quality control of thin film solar modules |
| US20090223511A1 (en) * | 2008-03-04 | 2009-09-10 | Cox Edwin B | Unglazed photovoltaic and thermal apparatus and method |
| EP2159583A1 (en) * | 2008-08-29 | 2010-03-03 | ODERSUN Aktiengesellschaft | System and method for localizing and passivating defects in a photovoltaic element |
| US7979969B2 (en) * | 2008-11-17 | 2011-07-19 | Solopower, Inc. | Method of detecting and passivating a defect in a solar cell |
| US8318240B2 (en) * | 2008-11-17 | 2012-11-27 | Solopower, Inc. | Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement |
| US8247243B2 (en) * | 2009-05-22 | 2012-08-21 | Nanosolar, Inc. | Solar cell interconnection |
| JP4866954B2 (ja) * | 2009-11-05 | 2012-02-01 | 共進電機株式会社 | 太陽電池セル測定用試料台 |
| WO2011073971A2 (en) * | 2009-12-16 | 2011-06-23 | Shenkar College Of Engineering And Design | Photovoltaic device and method of its fabrication |
| US8164818B2 (en) | 2010-11-08 | 2012-04-24 | Soladigm, Inc. | Electrochromic window fabrication methods |
| US9306491B2 (en) * | 2011-05-16 | 2016-04-05 | First Solar, Inc. | Electrical test apparatus for a photovoltaic component |
| US9507232B2 (en) | 2011-09-14 | 2016-11-29 | View, Inc. | Portable defect mitigator for electrochromic windows |
| US9885934B2 (en) | 2011-09-14 | 2018-02-06 | View, Inc. | Portable defect mitigators for electrochromic windows |
| WO2013038780A1 (ja) * | 2011-09-15 | 2013-03-21 | 三洋電機株式会社 | 太陽電池及び太陽電池モジュール |
| US9341912B2 (en) | 2012-03-13 | 2016-05-17 | View, Inc. | Multi-zone EC windows |
| US9638977B2 (en) | 2012-03-13 | 2017-05-02 | View, Inc. | Pinhole mitigation for optical devices |
| WO2013173591A1 (en) | 2012-05-18 | 2013-11-21 | View, Inc. | Circumscribing defects in optical devices |
| CN207135068U (zh) * | 2017-08-30 | 2018-03-23 | 米亚索乐装备集成(福建)有限公司 | 可变角度光伏组件户外测试装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4301409A (en) * | 1978-06-06 | 1981-11-17 | California Institute Of Technology | Solar cell anomaly detection method and apparatus |
| US4640002A (en) * | 1982-02-25 | 1987-02-03 | The University Of Delaware | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices |
| JPS58158977A (ja) * | 1982-02-25 | 1983-09-21 | ユニバ−シテイ・オブ・デラウエア | 薄膜太陽電池を製造する方法及び装置 |
| US4464823A (en) * | 1982-10-21 | 1984-08-14 | Energy Conversion Devices, Inc. | Method for eliminating short and latent short circuit current paths in photovoltaic devices |
| US4451970A (en) * | 1982-10-21 | 1984-06-05 | Energy Conversion Devices, Inc. | System and method for eliminating short circuit current paths in photovoltaic devices |
| US4599558A (en) * | 1983-12-14 | 1986-07-08 | Ibm | Photovoltaic imaging for large area semiconductors |
| JPS6154681A (ja) * | 1984-08-25 | 1986-03-18 | Fuji Electric Corp Res & Dev Ltd | 薄膜光起電力素子の製造方法 |
| JPS6358274A (ja) * | 1986-08-29 | 1988-03-14 | Nec Corp | 半導体受光素子測定装置 |
| JPH02216844A (ja) * | 1989-02-17 | 1990-08-29 | Toshiba Corp | 半導体の光電特性測定方法 |
| JP2633953B2 (ja) * | 1989-03-28 | 1997-07-23 | シャープ株式会社 | 積層型太陽電池の特性測定方法 |
| US5521519A (en) * | 1992-07-30 | 1996-05-28 | International Business Machines Corporation | Spring probe with piloted and headed contact and method of tip formation |
| US5517128A (en) * | 1993-01-05 | 1996-05-14 | Sentech Instruments Gmbh | Method and arrangement for charge carrier profiling in semiconductor structure by means of AFM scanning |
-
1999
- 1999-10-04 NL NL1013204A patent/NL1013204C2/nl not_active IP Right Cessation
-
2000
- 2000-09-27 ES ES00970312T patent/ES2193992T3/es not_active Expired - Lifetime
- 2000-09-27 DE DE60001333T patent/DE60001333T2/de not_active Expired - Lifetime
- 2000-09-27 AT AT00970312T patent/ATE232016T1/de not_active IP Right Cessation
- 2000-09-27 WO PCT/NL2000/000691 patent/WO2001026163A1/en not_active Ceased
- 2000-09-27 JP JP2001529029A patent/JP4628628B2/ja not_active Expired - Fee Related
- 2000-09-27 US US10/089,546 patent/US6750662B1/en not_active Expired - Fee Related
- 2000-09-27 AU AU79711/00A patent/AU772404B2/en not_active Ceased
- 2000-09-27 EP EP00970312A patent/EP1218946B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AU7971100A (en) | 2001-05-10 |
| EP1218946A1 (en) | 2002-07-03 |
| WO2001026163A1 (en) | 2001-04-12 |
| ES2193992T3 (es) | 2003-11-16 |
| ATE232016T1 (de) | 2003-02-15 |
| US6750662B1 (en) | 2004-06-15 |
| DE60001333D1 (de) | 2003-03-06 |
| EP1218946B1 (en) | 2003-01-29 |
| AU772404B2 (en) | 2004-04-29 |
| JP2003511861A (ja) | 2003-03-25 |
| DE60001333T2 (de) | 2004-01-15 |
| NL1013204C2 (nl) | 2001-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4628628B2 (ja) | 光起電性素子における製造エラーを局所化する装置 | |
| US4640002A (en) | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices | |
| US7979969B2 (en) | Method of detecting and passivating a defect in a solar cell | |
| US8318240B2 (en) | Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement | |
| US8318239B2 (en) | Method and apparatus for detecting and passivating defects in thin film solar cells | |
| CN108196110A (zh) | 一种金属半导体界面复合电流密度的测试方法及装置 | |
| JP4781948B2 (ja) | 太陽電池電極用検査装置及び太陽電池電極の検査方法 | |
| KR20100113129A (ko) | 태양전지의 제조 방법, 태양전지의 제조 장치 및 태양전지 | |
| EP0087776B1 (en) | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices | |
| JP5186552B2 (ja) | 太陽電池の製造方法および太陽電池の製造装置 | |
| JP2010021437A (ja) | 太陽電池の製造装置およびその製造方法 | |
| CN108120869A (zh) | 一种金属半导体界面复合电流密度的测试方法 | |
| Antón et al. | Performance prediction of concentrator solar cells and modules from dark I–V characteristics | |
| US20250023516A1 (en) | Contact device and arrangement and method for characterizing sub-cells | |
| US4728615A (en) | Method for producing thin-film photoelectric transducer | |
| JP2009246122A (ja) | 太陽電池の製造方法および製造装置 | |
| CN215773046U (zh) | 一种用于多主栅太阳能电池局部缺陷检测的探针排结构 | |
| JP2012256734A (ja) | 選別方法、太陽電池モジュール製造方法、及び評価装置 | |
| JPWO2011024750A1 (ja) | 太陽電池の評価方法及び評価装置 | |
| KR101694163B1 (ko) | 태양 전지의 측정 장치 | |
| Schulte-Huxel et al. | Impact of Ag pads on the series resistance of PERC solar cells | |
| Smith | Emitter-Wrap Through Solar Cells with Screen-Printed Contacts | |
| Samuel et al. | Effective IV Measurement Techniques for Busbarless and MultiBusbar Solar cells | |
| Fortunato et al. | Role of the Collecting Resistive Layer on the Static Characteristics of 2D a-Si: H thin Film Position Sensitive Detector | |
| Plunkett et al. | Laser scanning of experimental solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20060320 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20060320 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070612 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070612 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100604 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100611 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100826 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101029 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101110 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131119 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |