JP4628087B2 - リソグラフィ装置及びデバイス製造方法 - Google Patents
リソグラフィ装置及びデバイス製造方法 Download PDFInfo
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- JP4628087B2 JP4628087B2 JP2004369270A JP2004369270A JP4628087B2 JP 4628087 B2 JP4628087 B2 JP 4628087B2 JP 2004369270 A JP2004369270 A JP 2004369270A JP 2004369270 A JP2004369270 A JP 2004369270A JP 4628087 B2 JP4628087 B2 JP 4628087B2
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- 238000012546 transfer Methods 0.000 claims description 82
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- 238000001816 cooling Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Epidemiology (AREA)
- Toxicology (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Public Health (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
放射線ビームを基板に提供するための手段と、
放射線ビームの断面にパターンを与えるための手段と、
基板及びパターンを与える手段の少なくとも1つを支持するための手段と、
この支持するための手段と、この支持するための手段から離隔され、機械的に分離され、この支持するための手段に熱的に結合された構成要素との間で熱を伝達するための手段とを含むリソグラフィ装置が提供される。
MA パターン形成デバイス(マスク)
MT 第1の支持構造体(マスク・テーブル)
PB 投影ビーム
PL 投影装置
PM 第1の位置決め構造体
PW 第2の位置決め構造体
SO 放射線源
W 基板
WT 基板テーブル(ウェハ・テーブル)
100 チャック組立体
110 フレーム
111 鏡
120 チャック
121 静電クランプ
122 支持表面
130 ロング・ストローク・モジュール
131 モータ
140 ローレンツ・アクチュエータ
151、152、153 熱素子
154 流体チャネル
156、157、158 熱センサ
159 電流源
160 間隔
1100 第1の表面
1300 第2の表面
1500 バックフィル・ガス・装置
1521 第1の電極
1522 第2の電極
Claims (4)
- 放射線ビームを基板に提供するように構成された照明装置と、前記放射線ビームの断面にパターンを与えるように働くパターン形成装置と、チャックを支持するフレームを有しており、かつ、前記基板及び前記パターン形成装置のうちの少なくとも1つを支持するためのチャック組立体と、第1の表面と第2の表面との間で熱を伝達するように構成された熱伝達装置と、を含むリソグラフィ装置であって、
前記第1の表面は、前記チャック組立体の少なくとも一部によって少なくとも部分的に形成され、
前記第2の表面は、前記チャック組立体から離隔された構成要素の少なくとも一部によって少なくとも部分的に形成されるとともに前記第1の表面から機械的に分離され、かつ前記第1の表面に熱的に結合されており、
前記熱伝達装置は、複数の熱素子及び複数の熱センサを備え、
前記複数の熱素子は、別々に制御され、かつ、前記第1の表面の異なる部分間で熱伝達を発生させるように構成されるとともに、熱を前記第2の表面から又は前記第2の表面に伝達することが可能な表面熱伝達デバイスとして機能し、
前記複数の熱センサは、前記複数の熱素子の別個の1つに向かう熱流束を適合させるように前記複数の熱素子に通信可能に接続され、かつ、前記チャックと前記第1の表面との間の熱流束経路における前記フレーム内に配置され、
前記熱伝達装置は、前記構成要素の本体に位置決めされ、熱を前記表面熱伝達デバイスから又は前記表面熱伝達デバイスに伝達するために前記表面熱伝達デバイスと熱接触するバルク熱伝達デバイスを含み、
前記バルク熱伝達デバイスが前記構成要素を一定温度に維持する一方、前記表面熱伝達デバイスが前記チャック組立体の温度の局所的又は一時的な歪みを補正する、
リソグラフィ装置。 - 前記表面熱伝達デバイスは、前記第2の表面の第1の電極と、前記バルク熱伝達デバイスに向けられた第2の電極と、が取り付けられた少なくとも1つの熱電素子を含む、
請求項1に記載されたリソグラフィ装置。 - 前記バルク熱伝達デバイスが流体チャネルを含む、
請求項1に記載されたリソグラフィ装置。 - 前記バルク熱伝達デバイスがヒートパイプを含む、
請求項1に記載されたリソグラフィ装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/740,832 US7489388B2 (en) | 2003-12-22 | 2003-12-22 | Lithographic apparatus and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005184000A JP2005184000A (ja) | 2005-07-07 |
JP4628087B2 true JP4628087B2 (ja) | 2011-02-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004369270A Active JP4628087B2 (ja) | 2003-12-22 | 2004-12-21 | リソグラフィ装置及びデバイス製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7489388B2 (ja) |
EP (1) | EP1548503B1 (ja) |
JP (1) | JP4628087B2 (ja) |
KR (1) | KR100700368B1 (ja) |
CN (1) | CN1637616A (ja) |
DE (1) | DE602004017411D1 (ja) |
SG (1) | SG112971A1 (ja) |
TW (1) | TWI253674B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US7548303B2 (en) * | 2004-09-04 | 2009-06-16 | Nikon Corporation | Cooling assembly for a stage |
JP4784860B2 (ja) * | 2006-01-31 | 2011-10-05 | 株式会社ニコン | 処理装置及び処理方法、並びに露光装置 |
US8760621B2 (en) | 2007-03-12 | 2014-06-24 | Asml Netherlands B.V. | Lithographic apparatus and method |
JP5164589B2 (ja) * | 2008-01-30 | 2013-03-21 | 株式会社日立ハイテクノロジーズ | インプリント装置 |
NL2003528A (en) * | 2008-10-23 | 2010-04-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
US10054754B2 (en) * | 2009-02-04 | 2018-08-21 | Nikon Corporation | Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger |
NL2004242A (en) * | 2009-04-13 | 2010-10-14 | Asml Netherlands Bv | Detector module, cooling arrangement and lithographic apparatus comprising a detector module. |
EP2656378B1 (de) | 2010-12-20 | 2015-03-18 | Ev Group E. Thallner GmbH | Aufnahmeeinrichtung zur halterung von wafern |
DE102013201803A1 (de) * | 2013-02-05 | 2014-02-27 | Carl Zeiss Smt Gmbh | Strahlungskühler und verfahren zur steuerung und regelung hierfür |
DE102013201805A1 (de) * | 2013-02-05 | 2013-11-28 | Carl Zeiss Smt Gmbh | Lithographieanlage mit kühlvorrichtung |
US10054495B2 (en) | 2013-07-02 | 2018-08-21 | Exergen Corporation | Infrared contrasting color temperature measurement system |
US11435766B2 (en) * | 2018-09-07 | 2022-09-06 | Maxwell Labs Inc | Fine-grain dynamic solid-state cooling system |
US11448955B2 (en) * | 2018-09-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask for lithography process and method for manufacturing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69118315T2 (de) * | 1990-11-01 | 1996-08-14 | Canon Kk | Waferhaltebefestigung für Belichtungsgerät |
JP3173928B2 (ja) * | 1992-09-25 | 2001-06-04 | キヤノン株式会社 | 基板保持装置、基板保持方法および露光装置 |
JP3814359B2 (ja) | 1996-03-12 | 2006-08-30 | キヤノン株式会社 | X線投影露光装置及びデバイス製造方法 |
JP3661291B2 (ja) * | 1996-08-01 | 2005-06-15 | 株式会社ニコン | 露光装置 |
EP1052548B1 (en) | 1999-04-21 | 2005-06-08 | ASML Netherlands B.V. | Lithographic projection apparatus |
JP4745556B2 (ja) | 2001-08-20 | 2011-08-10 | キヤノン株式会社 | 位置決め装置、露光装置、及びデバイス製造方法 |
JP2003068626A (ja) | 2001-08-29 | 2003-03-07 | Canon Inc | 露光装置内ユニットの輻射冷却方法及び輻射冷却装置 |
US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
US7105836B2 (en) | 2002-10-18 | 2006-09-12 | Asml Holding N.V. | Method and apparatus for cooling a reticle during lithographic exposure |
JP4458333B2 (ja) | 2003-02-13 | 2010-04-28 | キヤノン株式会社 | 露光装置、およびデバイスの製造方法 |
-
2003
- 2003-12-22 US US10/740,832 patent/US7489388B2/en not_active Expired - Lifetime
-
2004
- 2004-12-14 DE DE602004017411T patent/DE602004017411D1/de not_active Expired - Fee Related
- 2004-12-14 EP EP04078390A patent/EP1548503B1/en not_active Expired - Fee Related
- 2004-12-15 SG SG200407392A patent/SG112971A1/en unknown
- 2004-12-17 TW TW093139433A patent/TWI253674B/zh not_active IP Right Cessation
- 2004-12-21 JP JP2004369270A patent/JP4628087B2/ja active Active
- 2004-12-22 KR KR1020040110213A patent/KR100700368B1/ko not_active IP Right Cessation
- 2004-12-22 CN CN200410102080.8A patent/CN1637616A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1548503B1 (en) | 2008-10-29 |
TWI253674B (en) | 2006-04-21 |
EP1548503A3 (en) | 2006-10-04 |
TW200527499A (en) | 2005-08-16 |
US20050134827A1 (en) | 2005-06-23 |
SG112971A1 (en) | 2005-07-28 |
KR20050063730A (ko) | 2005-06-28 |
JP2005184000A (ja) | 2005-07-07 |
DE602004017411D1 (de) | 2008-12-11 |
CN1637616A (zh) | 2005-07-13 |
US7489388B2 (en) | 2009-02-10 |
EP1548503A2 (en) | 2005-06-29 |
KR100700368B1 (ko) | 2007-03-27 |
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