JP4626062B2

JP4626062B2 - Substrate processing apparatus and substrate processing method

Info

Publication number: JP4626062B2
Application number: JP2001022282A
Authority: JP
Inventors: 徹竹部; 喜夫渡邉; 一男新坂
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 2001-01-30
Filing date: 2001-01-30
Publication date: 2011-02-02
Anticipated expiration: 2021-01-30
Also published as: JP2002232151A

Description

【０００１】
【発明の属する技術分野】
本発明は、接続孔が形成された基板の表面を処理する基板処理装置及び基板処理方法に関し、特に、基板表面のみならず接続孔内も確実に処理できる基板処理装置及び基板処理方法に関する。
【０００２】
【従来の技術】
ビルドアップ法により形成されるプリント配線基板がある。このプリント配線基板は、内層基板の少なくとも一方の面に１層目の配線パターンを形成し、この１層目の配線パターンの形成された面上に絶縁層を形成し、次いで、１層目の配線パターンを外部に臨ませる非貫通の接続孔を形成し、この絶縁層上に更に１層目の配線パターンと層間接続がされた２層目の配線パターンを形成してなる。
【０００３】
ここで、絶縁層上に設けられる２層目の配線パターンは、無電解銅メッキにより形成される。そこで、非貫通の接続孔が形成された絶縁層表面には、無電解銅メッキの前処理として、活性剤で電荷の調整を行うコンディショナ処理工程、Ｐｄ−Ｓｎ等を絶縁層表面に被着させるキャタライジング前処理工程、Ｓｎ化合物を除去しＰｄに活性を与えるアクセラレータ処理等が行われる。
【０００４】
これらの処理を行う装置としては、処理液が貯留された処理槽内に接続孔が形成された内層基板を浸漬する装置や処理液を噴射するノズルが設けられた処理液が貯留された処理槽内を、接続孔が形成された内層基板を寝かした状態で水平方向に移動させる装置がある。
【０００５】
【発明が解決しようとする課題】
しかしながら、処理液が貯留された処理槽内に接続孔が形成された内層基板を浸漬する装置は、接続孔内に処理液が拡散し置換されるまでに時間を要し、基板を数分間以上浸漬する必要があった。そのため、無電解銅メッキの前処理を迅速に行うことができなかった。
【０００６】
また、処理液を噴射するノズルが設けられた処理液が貯留された処理槽内を、接続孔が形成された内層基板を寝かした状態で水平方向に移動させる装置は、装置全体が大型化してしまう。また、この装置では、絶縁層がコンベアに接触することから、絶縁層が傷付いてしまうことがある。また、基板の下側となる面に設けられた非貫通の接続孔には、エアが溜まり前処理を確実に行うことができないことがあった。これを防止するときには、基板を裏返す必要が生じ、前処理を迅速に行うことができなくなる。
【０００７】
特に、ファインパターンが形成される基板では、接続孔も微細化し、接続孔内に処理液を拡散しづらくなることから、上述した装置では更に多くの時間を要することになる。
【０００８】
本発明の目的は、微細な接続孔であっても処理液を接続孔内に迅速に拡散し、確実に処理を行うことができると共に処理時間の短縮を図ることができる基板処理装置及び基板処理方法を提供することにある。
【０００９】
また、本発明の目的は、接続孔が形成された基板の表面を処理する基板処理装置の小型化を図ることにある。
【００１０】
【課題を解決するための手段】
本発明に係る基板処理装置は、上述した課題を解決すべく、内部に設けられた配設部に、接続孔が形成された基板が配設部を構成する内壁との間にクリアランスが設けられるように立てられた状態で配設される処理槽と、処理槽の上側に設けられ、配設部を閉塞することで基板の処理空間を構成する蓋体と、蓋体に設けられ、処理空間内に処理液を供給する供給手段と、処理槽に設けられ、処理空間に貯留された処理液を排出する排出手段とを備える。そして、蓋体には、処理液の上流側が略先鋭状に形成され、供給手段より供給される処理液を、処理空間に配設された基板の幅方向に広げるための第１の整流板と、第１の整流板で基板の幅方向に整流された処理液を処理空間に配設された基板の厚さ方向に広げるための第２の整流板とが設けられ、供給手段の処理空間に処理液を供給する開口部の大きさが、処理空間の供給手段と接続される開口部の大きさと略同じ又はより大きく形成されている。また、蓋体は、供給手段が接続された側から処理槽に近接される側に向かって拡幅に形成され、処理槽は、排出手段に向かって幅が狭くなるように形成されている。
【００１１】
また、本発明に係る基板処理方法は、上述した課題を解決すべく、処理槽内部に設けられた配設部に、接続孔が形成された基板を、配設部を構成する内壁との間にクリアランスが設けられるように立てた状態で配設し、配設部を蓋体で閉塞し、基板の処理空間を構成し、処理液を処理空間に供給する供給手段が接続された側から、処理液の排出手段に向かって幅が狭くなるように形成されている処理槽に近接される側に向かって拡幅に形成された蓋体に設けられ、処理空間に処理液を供給する供給手段の処理空間に処理液を供給する開口部の大きさが、処理空間の供給手段と接続される開口部の大きさと略同じ又はより大きく形成され、供給手段の開口部及び処理空間の開口部を介して処理液を処理空間に供給し、処理空間に処理液を供給する際に、蓋体に設けられ、処理液の上流側が略先鋭状に形成された第１の整流板で、供給手段より供給された上記処理液を、処理空間に配設された基板の幅方向に広げ、第１の整流板で基板の幅方向に整流された処理液を第２の整流板で、処理空間に配設された基板の厚さ方向に広げ、処理空間内に処理液を充填し、処理液を蓋体側から供給しながら処理槽側から排出し、基板表面に流れを発生させ上記基板を処理する。
【００１２】
【発明の実施の形態】
以下、本発明が適用された基板処理装置及び基板処理方法について図面を参照して説明する。
【００１３】
先ず、本発明が適用された基板処理装置及び基板処理方法の説明に先立ってプリント配線基板について、図１を参照して説明する。
【００１４】
このプリント配線基板１は、ビルドアップ法によって複数の導電層が積層される多層型のプリント配線基板であって、図１（Ａ）に示すように、内層基板２を有する。この内層基板２は、例えばガラス繊維にエポキシ樹脂等を含浸させた絶縁基板であり、両面に内層パターン３，４が形成されている。これら内層パターン３，４は、絶縁基板２に貼り合わされた銅箔を露光、現像、エッチングすることによって形成される。また、内層パターン３と内層パターン４とは、ドリル等によって絶縁基板２を貫通した第１の接続孔５によって電気的に接続されている。この第１の接続孔５は、銅箔をパターニングする前に、所定位置にドリル、レーザ等によって絶縁基板２に形成された貫通孔５ａを形成し、次いで、この貫通孔５ａの内壁を含む銅箔前面に無電解銅メッキ等によって導電層５ｂを形成することによって形成され、この導電層５ｂで、絶縁基板２の各面に形成された内層パターン３と内層パターン４との電気的接続を図っている。
【００１５】
そして、内層パターン３，４の上には、図１（Ｂ）に示すように、熱硬化型の樹脂、例えばエポキシ樹脂により絶縁層６，７が形成される。絶縁層６，７には、図１（Ｃ）及び図１（Ｄ）に示すように、熱硬化された後、次工程で形成される外層パターンと層間接続を図るための第２の接続孔８，９が所定位置に形成される。この第２の接続孔８，９は、先ず、レーザ等で絶縁層６，７に内層パターン３，４が外部に臨ませる非貫通孔８ａ，９ａを形成し、次いで、非貫通孔８ａ，９ａの内壁を含む絶縁層６，７の表面に無電解銅メッキにより導電層８ｂ，９ｂが形成されることによって形成される。なお、本発明が適用された基板処理装置は、この無電解銅メッキの前処理に用いられる。そして、絶縁層６，７上には、この導電層を、露光、現像、エッチング等することによって、内層パターン３，４と層間接続がされた外層パターン１０，１１が形成される。
【００１６】
ところで、第２の接続孔８，９を形成するため無電解銅メッキを施すための前処理では、図２に示すように、先ず、非貫通孔８ａ，９ａが形成された基板に対して、先ず、活性剤で電荷の調整を行うコンディショナ処理を行い、次いで、活性剤を水洗する水洗処理を行い、次いで、水洗での基板に付着した純水を除去するためのプリディップ処理を行い、次いで、Ｐｄ（パラジウム）−Ｓｎ（錫）等の溶液で触媒を絶縁層６，７の表面に吸着させるキャタライジング処理を行い、次いで、キャタライジング処理で基板に付着した溶液を水洗する水洗処理を行い、次いで、Ｓｎを除去しＰｄに活性を与えるアクセラレータ処理を行い、次いで、溶液を水洗する水洗処理が行われる。
【００１７】
本発明に適用された基板処理装置２０は、このような無電解銅メッキの前処理、具体的には、上記図２に示したコンディショナ処理工程、水洗処理工程、プリディップ工程、キャタライジング工程、水洗処理工程、アクセラレータ処理工程、水洗処理工程で用いられる。この基板処理装置２０は、図３及び図４に示すように、上記図１（Ｃ）に示した第２の接続孔８，９を構成する非貫通孔８ａ，９ａが絶縁層６，７に形成された内層基板２が配設される処理槽２１と、この処理槽２１を閉塞する蓋体２２とを備える。
【００１８】
処理槽２１は、処理液と化学反応を起こさない材料で形成され、塩化ビニル、ポリプロピレン、テフロン（登録商標）、ステンレス、アルミニウム等で形成されている。また、処理槽２１は、上面側が開口された上記内層基板２が配設される配設部２３が形成されている。
【００１９】
配設部２３は、図３及び図４に示すように、内層基板２の外形よりやや大きく形成されており、内層基板２が配設されたとき、配設部２３を構成する内壁と内層基板２との間にクリアランス２４が設けられるようになっている。具体的に、図５に示すように、配設部２３は、内層基板２の幅Ｗ１が長手方向の幅と略同じになるように形成され、短辺方向の幅Ｔ１が内層基板２の厚さＴ２よりやや大きくなるように形成され、少なくとも内層基板２の主面と内壁との間にクリアランス２４が設けられるようになっている。なお、内層基板２の幅方向の端面と内壁との間にもクリアランスを設けるようにしてもよい。
【００２０】
また、配設部２３には、内層基板２を略鉛直に立てた状態で支持し、配設部２３の内壁と内層基板２が接触しないようにするための支持部材３０が設けられている。
【００２１】
支持部材３０に略鉛直に支持された内層基板２と配設部２３を構成する内壁との間には、クリアランス２４が設けられていることから、処理液は、内層基板２の表面を流れることになる。また、内層基板２と配設部２３の内壁とは、クリアランス２４が設けられることで、処理中に接触することが防止することができる。更に、内層基板２は、配設部２３に略鉛直に立てた状態で支持されることから、内層基板２の両面に設けられた非貫通孔８ａ，９ａ内の処理液を迅速に置換することができる。
【００２２】
なお、クリアランス２４は、広すぎると処理液を大量に流す必要が生じ、一方、狭すぎると処理中に内層基板２が撓み内壁と接触してしまうおそれがあることから、内層基板２の厚さ等の関係で定められる。
【００２３】
また、配設部２３の下側は、処理液の排出管２５に処理液を集めることができるように徐々に狭くなるように形成されている。排出管２５は、処理中に常に処理空間内が処理液で充填された状態で処理空間に処理液により大気圧程度の圧力が加わった状態となるように処理液を排出する。したがって、排出管２５は、この条件を満たすような太さの管或いはこの条件を満たすようにバルブが設けられる。
【００２４】
また、処理槽２１の蓋体２２が近接される側の周囲には、蓋体２２とで密閉された処理空間を構成するためのフランジ部２６が形成されている。
【００２５】
このような処理槽２１とで処理空間を構成するための蓋体２２は、上述した処理槽２１と同じ材料で形成されている。蓋体２２は、図３及び図４に示すように、配設部２３に配設された内層基板２の上側を収納し、配設部２３とで処理空間２７を構成する空間部２８が形成されている。空間部２８は、図６に示すように、幅方向が、供給管２９の寸法から処理槽２１の配設部２３の長手方向の幅Ｗ１に寸法を合わせるように、処理液の供給管２９が接続される上側から処理槽２１に近接される下側に向かって徐々に拡幅するように形成され、また、図７に示すように、供給管２９の寸法から配設部２３の短辺方向の幅Ｔ１に寸法を合わせるように、厚さ方向が上側から下側に向かって狭くなるように形成されている。空間部２８は、このように形成されることで、配設部２３に配設された内層基板２の全体に処理液を流すことができるようになっている。
【００２６】
また、空間部２８の供給管２９の接続部となる開口部の断面積は、図６に示すように、幅方向において、供給管２９の断面積と略同じ若しくは供給管２９の断面積より小さくなるように形成され、また、図７に示すように、厚さ方向において、供給管２９の断面積と略同じ若しくは供給管２９の断面積より小さくなるなるように形成されている。すなわち、供給管２９の断面積は、空間部２８の供給管２９の接続部となる開口部の断面積より略同じ若しくは大きくなるように形成されることで、処理液の流速を確保し、また、処理時の内部圧力を確保することができるようにしている。
【００２７】
また、空間部２８には、図６及び図７に示すように、供給管２９側に、供給管２９から空間部２８に供給された処理液を配設部２３に配設された内層基板２の幅方向に振り分けるための第１の整流板３１が設けられている。この第１の整流板３１は、円滑に供給管２９から供給される処理液を内層基板２の幅方向に分流することができるように供給管２９側、すなわち処理液の上流側が略先鋭状に形成されている。
【００２８】
また、空間部２８には、図６及び図７に示すように、第１の整流板３１で配設部２３に配設された内層基板２の幅方向に振り分けられた処理液を内層基板２の厚さ方向に振り分けるための第２の整流板３２が設けられている。この第２の整流板３２も、第１の整流板３１で内層基板２の幅方向に整流された処理液を円滑に分流することができるように上流側が略先鋭状に形成されている。
【００２９】
なお、空間部２８に設けられる第１の整流板３１と第２の整流板３３は、処理液の上流側に第２の整流板３２を設け、下流側に第１の整流板３１を設けるようにしてもよい。
【００３０】
供給管２９は、蓋体２２が処理槽２１に近接し、処理空間２７を構成しているとき、内部が処理液により大気圧程度の圧力が加わった状態となるような流量で処理液を供給する。また、この蓋体２２は、駆動機構に接続されており、処理槽２１に内層基板２が配設されたとき、処理槽２１に近接する方向に移動し処理空間２７を構成するようになっている。
【００３１】
なお、この蓋体２２の処理槽２１側の周囲には、処理槽２１に設けられたフランジ部２６に対応してフランジ部３３が設けられている。
【００３２】
次に、以上のように構成された基板処理装置２０の動作について説明する。先ず、図３に示すように、蓋体２２が処理槽２１から離間した状態で、内層基板２が配設部２３に配設される。なお、ここで用いられる内層基板２は、図１（Ｃ）に示すように、内層基板２の両面に内層パターン３，４が形成され、この上層に絶縁層６，７が形成され、絶縁層６，７の所定位置に内層パターン３，４が外部に臨む非貫通孔８ａ，９ａが形成されたものである。この内層基板２は、支持部材３０に支持されることにより、配設部２３内に、配設部２３を構成する内壁と内層基板２の主面との間にクリアランス２４が設けられた状態で、略鉛直に立った状態で支持される。
【００３３】
次いで、蓋体２２は、駆動機構により処理槽２１に近接する方向に移動されることによって、図４に示すように、処理空間２７が構成される。ここで、蓋体２２のフランジ部３３は処理槽２１のフランジ部２６に圧接され、これにより、処理空間２７には、外気が混入することが防止される。なお、ここで、処理槽２１と蓋体２２とは、フランジ部２６，３３とをパッキン等で止めるようにしてもよい。
【００３４】
処理空間２７が構成されると、供給管２９からは、所定の処理液が処理空間２７に供給される。ここで、先ず、処理空間２７には、処理液が充填される。そして、更に処理液が処理空間２７内に供給され続けると共に排出管２５からの処理液の排出量を供給量より少なくすることで、処理空間２７内は、大気圧程度の圧力が形成されると共に、処理液の供給管２９から排出管２５への流れが形成される。ここで、処理液は、図４中矢印Ｆ１に示すように、第１の整流板３１により、配設部２３に配設された内層基板２の幅方向に流れが振り分けられ、内層基板２の幅方向に亘って処理液が同じ速度で流れるようになる。次いで、第１の整流板３１で配設部２３に配設された内層基板２の幅方向に流れが振り分けられた処理液は、図４中矢印Ｆ２に示すように、第２の整流板３２によって、配設部２３に配設された内層基板２の厚さ方向に流れが振り分けられる。これによって、内層基板２の両面には、処理液が同じ流速で流れることになる。かくして、処理空間２７内の内層基板２は、全体が同じ条件で処理液が流れることになり、全体が同じ速度で処理が進むことになる。ここで、配設部２３に配設された内層基板２の表面の流速は、好ましくは０．５ｍ／ｓｅｃ以上である。
【００３５】
処理空間２７内の内層基板２の処理が終了すると、先ず、基板処理装置２０は、供給管２９からの処理液の供給を停止すると共に、排出管２５からの処理液の排出を継続することで、処理空間２７内の処理液を全て排出する。次いで、蓋体２２は、駆動機構によって処理槽２１から離間する方向に移動される。これによって、配設部２３より処理の終了した内層基板２は取り出される。
【００３６】
なお、下記表１に、非貫通孔８ａ，９ａを含む絶縁層６，７の表面に導電層８ｂ，８ｂを形成するための無電解銅メッキを行う際の前処理に基板処理装置２０を用いたときの実験結果を示す。なお、基板処理装置２０との比較のため、従来用いられていた処理液が貯留された槽内に内層基板を浸漬する装置や処理液を噴射するノズルが設けられた処理液が貯留された槽内を、内層基板を寝かした状態で水平方向に移動させる装置を用いて実験を行った。
【００３７】
【表１】

【００３８】
なお、配設部２３を構成する内壁と内層基板２との間のクリアランス２４は、図８に示すように設定した。また、供給管２９より供給する処理液の流量は、４５リットル／３０ｓｅｃ（実測：１．５リットル／ｓｅｃ）とし、配設部２３に配設した内層基板２の表面における処理液の流速（理論値）を２．７ｍ／ｓｅｃと０．５ｍ／ｓｅｃとした。処理液を噴射するノズルが設けられた処理液が貯留された槽内を、内層基板を寝かした状態で水平方向に移動させる装置では、液中スプレーの流速は、１ｍ／ｓｅｃである。
【００３９】
処理液が貯留された槽内に内層基板を浸漬する装置を用いた浸漬処理では、各工程の処理時間を６０ｓｅｃとすると、非貫通孔８ａ，９ａの底面付近でメッキを析出することができなかった。
【００４０】
また、処理液を噴射するノズルが設けられた処理液が貯留された槽内を、内層基板を寝かした状態で水平方向に移動させる装置を用いたコンベア処理では、各工程を６０ｓｅｃから３０ｓｅｃにすると、内層基板２の下面側でメッキを析出することができなかった。
【００４１】
これに対して、本発明が適用された基板処理装置２０では、配設部２３に配設した内層基板２の表面における処理液の流速を２．７ｍ／ｓｅｃに設定すると、各工程を３０ｓｅｃ行うだけでもメッキ処理を完全に行うことができた。
【００４２】
また、基板処理装置２０では、配設部２３に配設した内層基板２の表面における処理液の流速を０．５ｍ／ｓｅｃに設定し、各工程を３０ｓｅｃ行うだけでもメッキ処理を完全に行うことができた。
【００４３】
以上のように、本発明が適用された基板処理装置２０では、従来の装置より処理時間を短縮することができる。また、基板処理装置２０では、配設部２３に配設された内層基板２の表面を流れる処理液の流速を少なくとも０．５ｍ／ｓｅｃ以上とすることが必要であることが確認できる。
【００４４】
以上のような基板処理装置２０では、処理を行う内層基板２が略鉛直に立てられた状態で処理が行われる。したがって、従来のように略水平に寝かした状態で内層基板２の処理を行うときには、下側となる面に設けられた非貫通孔８ａ，９ａにおけるエア溜まりによって処理液の置換が行われづらい状態となるが、この基板処理装置２０では、処理を行う内層基板２を配設部２３に略鉛直に立てた状態で処理を行うことから、内層基板２の両面に設けられた非貫通孔８ａ，９ａの処理を同時に行うことができ、処理時間の短縮を図ることができる。
【００４５】
また、蓋体２２には、供給管２９からの処理液を、配設部２３に配設された内層基板２の幅方向に振り分ける第１の整流板３１と内層基板２の厚さ方向に振り分ける第２の整流板３２が設けられていることから、内層基板２の各面の全体に同じ流速で処理液を流すことができ、同じ速さで処理を進めることができる。なお、配設部２３に配設された内層基板２は、支持部材３０に支持されており、また、配設部２３を構成する内壁との間にクリアランス２４が設けられていることから、処理中に内層基板２が配設部２３の内壁に接触し損傷することを防止することができる。
【００４６】
なお、以上、非貫通孔８ａ，９ａが形成された絶縁層６，７の表面に無電解銅メッキを行う際の前処理を行うときに本発明が適用された基板処理装置２０を用いた例を説明したが、基板処理装置２０は、貫通孔５ａの内壁に導電層５ｂを無電解銅メッキで形成する際の前処理に用いてもよい。また、以上の例では、処理空間２７に１枚の内層基板２を収納する場合を説明したが、本発明は、処理空間相に複数枚の内層基板を収納し、これらの内層基板の処理を一度に行うことができるようにすることで、更に基板処理効率の向上を図ることができる。更に、プリント配線基板１における導電層の数は、特に限定されるものではない。
【００４７】
また、この基板処理装置２０は、貫通孔や非貫通孔をドリルやレーザで形成した後、内部に残った樹脂残滓を化学的に除去するデスミア工程やクリーム半田をランドに印刷する際の前処理であるプリフラックス工程等で用いてもよい。このように、本発明は、化学的処理の前工程で用いるのが有効である。
【００４８】
【発明の効果】
本発明によれば、処理を行う基板が略鉛直に立てられた状態で処理が行われる。したがって、従来のように略水平に寝かした状態で基板の処理を行うときには、下側となる面に設けられた接続孔における処理液の置換が行われづらい状態となるが、本発明では、処理を行う基板を配設部に略鉛直に立てた状態で処理を行うことから、基板の両面に設けられた接続孔の処理を同時に行うことができ、処理時間の短縮を図ることができる。
【００４９】
また、蓋体には、供給手段からの処理液を、配設部に配設された基板の幅方向に振り分ける第１の整流板と基板の厚さ方向に振り分ける第２の整流板が設けられていることから、基板の各面の全体に同じ流速で処理液を流すことができ、同じ早さで処理を進めることができる。更に、配設部とここに配設された基板との間にはクリアランスが設けられていることから、処理中に基板が配設部の内壁に接触し損傷することを防止することができる。
【図面の簡単な説明】
【図１】プリント配線基板の製造工程を説明する断面図であり、（Ａ）は、内層基板の両面に内層パターンが形成された状態を示す図であり、（Ｂ）は、内層パターンが形成された内層基板の両面に絶縁層が形成された状態を示す図であり、（Ｃ）は、内層パターン上に形成された絶縁層に層間接続をするための非貫通孔を形成した状態を示す図であり、（Ｄ）は、絶縁層上に外層パターンを形成した状態を示す図である。
【図２】外層パターンを形成するための無電解銅メッキの前処理を説明する工程図である。
【図３】本発明が適用された基板処理装置の斜視図であり、処理槽に対して蓋体が離間した状態を示す図である。
【図４】本発明が適用された基板処理装置の斜視図であり、処理槽に対して蓋体が密着した状態を示す図である。
【図５】処理槽の開口端側からみた平面図である。
【図６】蓋体の断面図である。
【図７】蓋体の断面図である。
【図８】処理槽に構成される配設部と内層基板との関係を説明する平面図である。
【符号の説明】
１プリント配線基板、２内層基板、３，４内層パターン、５第１の接続孔、５ａ貫通孔、５ｂ導電層、６，７絶縁層、８，９第２の接続孔、８ａ，９ａ非貫通孔、８ｂ，９ｂ導電層、１０，１１外層パターン、２０基板処理装置、２１処理槽、２２蓋体、２３配設部、２４クリアランス、２５排出管、２６フランジ部、２７処理空間、２８空間部、２９供給管、３０支持部材、３１第１の整流板、３２第２の整流板、３３フランジ部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus and a substrate processing method for processing a surface of a substrate in which connection holes are formed, and more particularly to a substrate processing apparatus and a substrate processing method capable of reliably processing not only the substrate surface but also the connection holes.
[0002]
[Prior art]
There is a printed wiring board formed by a build-up method. In this printed wiring board, a first layer wiring pattern is formed on at least one surface of the inner layer substrate, an insulating layer is formed on the surface on which the first layer wiring pattern is formed, and then the first layer is formed. A non-penetrating connection hole is formed to expose the wiring pattern to the outside, and a second-layer wiring pattern in which interlayer connection is made with the first-layer wiring pattern is further formed on this insulating layer.
[0003]
Here, the second-layer wiring pattern provided on the insulating layer is formed by electroless copper plating. Therefore, a conditioner treatment process for adjusting the charge with an activator, such as Pd-Sn, is applied to the insulating layer surface as a pretreatment for electroless copper plating on the surface of the insulating layer in which the non-through connection holes are formed. A catalyzing pretreatment step to be performed, an accelerator treatment for removing Sn compounds and imparting activity to Pd are performed.
[0004]
As an apparatus for performing these treatments, a treatment tank in which a treatment liquid in which a treatment liquid in which an inner layer substrate in which a connection hole is formed is immersed in a treatment tank in which a treatment liquid is stored or a nozzle for injecting a treatment liquid is provided is stored. There is a device that moves the inside in a horizontal direction with the inner layer substrate on which the connection hole is formed lying down.
[0005]
[Problems to be solved by the invention]
However, the apparatus for immersing the inner layer substrate in which the connection hole is formed in the treatment tank in which the treatment liquid is stored requires time until the treatment liquid is diffused and replaced in the connection hole. It was necessary to immerse. Therefore, the pretreatment of electroless copper plating could not be performed quickly.
[0006]
In addition, the apparatus that moves in the horizontal direction in the state where the inner layer substrate in which the connection hole is formed is laid down in the processing tank in which the processing liquid provided with the nozzle for injecting the processing liquid is stored is enlarged in size. End up. Moreover, in this apparatus, since an insulating layer contacts a conveyor, an insulating layer may be damaged. In addition, air may accumulate in the non-penetrating connection hole provided on the lower surface of the substrate, and the pretreatment may not be performed reliably. In order to prevent this, it is necessary to turn the substrate upside down, and the pretreatment cannot be performed quickly.
[0007]
In particular, in the substrate on which the fine pattern is formed, the connection hole is also miniaturized, and it is difficult to diffuse the processing liquid into the connection hole. Therefore, the above-described apparatus requires more time.
[0008]
SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing apparatus that can quickly diffuse a processing liquid into a connection hole even if it is a fine connection hole, and can reliably perform processing and shorten processing time. It is to provide a method.
[0009]
Another object of the present invention is to reduce the size of a substrate processing apparatus for processing the surface of a substrate in which connection holes are formed.
[0010]
[Means for Solving the Problems]
In the substrate processing apparatus according to the present invention, in order to solve the above-described problems, a clearance is provided between an inner portion of the arrangement portion provided in the arrangement portion and an inner wall constituting the arrangement portion. Treatment tank disposed in a standing state, a lid provided on the upper side of the treatment tank, and a lid that forms a processing space of the substrate by closing the placement portion, and a treatment space provided on the lid A supply means for supplying the processing liquid therein, and a discharge means provided in the processing tank for discharging the processing liquid stored in the processing space. The lid is formed with a first current plate for spreading the processing liquid supplied from the supply means in the width direction of the substrate disposed in the processing space. And a second rectifying plate for spreading the processing liquid rectified in the width direction of the substrate by the first rectifying plate in the thickness direction of the substrate disposed in the processing space, and provided in the processing space of the supply means. The size of the opening for supplying the processing liquid is formed to be substantially the same as or larger than the size of the opening connected to the supply means of the processing space. Further, the lid body is formed so as to widen from the side where the supply means is connected toward the side close to the treatment tank, and the treatment tank is formed so that the width becomes narrower toward the discharge means .
[0011]
In addition, in order to solve the above-described problems, the substrate processing method according to the present invention provides a substrate in which a connection hole is formed in an arrangement portion provided inside the treatment tank, and an inner wall constituting the arrangement portion. From the side where the supply means for supplying the processing liquid to the processing space is connected. A supply means for supplying the processing liquid to the processing space provided on the lid formed wider toward the side close to the processing tank formed so that the width becomes narrower toward the processing liquid discharging means; The size of the opening for supplying the processing liquid to the processing space is formed to be approximately the same as or larger than the size of the opening connected to the supply unit of the processing space, and the opening of the supply unit and the opening of the processing space are interposed therebetween. Supply the processing liquid to the processing space and supply the processing liquid to the processing space. In this case, the processing liquid supplied from the supplying means is provided in the lid body, and the upstream side of the processing liquid is formed in a sharp shape on the upstream side of the processing liquid. The processing liquid rectified in the width direction of the substrate by the first rectifying plate is spread in the thickness direction of the substrate disposed in the processing space by the second rectifying plate, and the processing liquid is filled in the processing space Then, while supplying the processing liquid from the lid side, the processing liquid is discharged from the processing tank side, and a flow is generated on the substrate surface to process the substrate.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a substrate processing apparatus and a substrate processing method to which the present invention is applied will be described with reference to the drawings.
[0013]
First, prior to description of a substrate processing apparatus and a substrate processing method to which the present invention is applied, a printed wiring board will be described with reference to FIG.
[0014]
The printed wiring board 1 is a multilayer printed wiring board in which a plurality of conductive layers are laminated by a build-up method, and has an inner layer board 2 as shown in FIG. The inner layer substrate 2 is an insulating substrate obtained by impregnating glass fiber with an epoxy resin or the like, for example, and

inner layer patterns

3 and 4 are formed on both surfaces. These

inner layer patterns

3 and 4 are formed by exposing, developing, and etching the copper foil bonded to the insulating substrate 2. The inner layer pattern 3 and the inner layer pattern 4 are electrically connected by a first connection hole 5 penetrating the insulating substrate 2 with a drill or the like. The first connection hole 5 is formed with a through hole 5a formed in the insulating substrate 2 by a drill, a laser or the like at a predetermined position before patterning the copper foil, and then the copper including the inner wall of the through hole 5a. The conductive layer 5b is formed on the front surface of the foil by electroless copper plating or the like, and the conductive layer 5b is used to electrically connect the inner layer pattern 3 and the inner layer pattern 4 formed on each surface of the insulating substrate 2. ing.
[0015]
As shown in FIG. 1B, insulating layers 6 and 7 are formed on the

inner layer patterns

3 and 4 with a thermosetting resin, for example, an epoxy resin. As shown in FIGS. 1 (C) and 1 (D), the insulating layers 6 and 7 have a second connection hole for interlayer connection with an outer layer pattern formed in the next step after being thermally cured. 8, 9 are formed at predetermined positions. In the second connection holes 8 and 9, first, non-through holes 8a and 9a are formed in the insulating layers 6 and 7 by the laser or the like so that the

inner layer patterns

3 and 4 face the outside, and then the non-through holes 8a and 9a. The conductive layers 8b and 9b are formed by electroless copper plating on the surfaces of the insulating layers 6 and 7 including the inner walls. The substrate processing apparatus to which the present invention is applied is used for the pretreatment of the electroless copper plating. On the insulating layers 6 and 7, the conductive layers are exposed, developed, etched, and the like, so that the

outer layer patterns

10 and 11 that are interlayer-connected to the

inner layer patterns

3 and 4 are formed.
[0016]
By the way, in the pretreatment for applying the electroless copper plating to form the second connection holes 8 and 9, first, as shown in FIG. 2, for the substrate on which the non-through holes 8a and 9a are formed, First, perform a conditioner treatment to adjust the charge with the activator, then perform a water wash treatment to wash the active agent with water, then perform a pre-dip treatment to remove pure water attached to the substrate in the water wash, Next, a catalyzing process for adsorbing the catalyst on the surfaces of the insulating layers 6 and 7 with a solution such as Pd (palladium) -Sn (tin) is performed, and then a water rinsing process for rinsing the solution adhering to the substrate with the catalyzing process. Next, an accelerator treatment for removing Sn and activating Pd is performed, and then a water washing treatment for washing the solution with water is performed.
[0017]
The substrate processing apparatus 20 applied to the present invention is such a pretreatment of electroless copper plating, specifically, the conditioner treatment step, the water washing treatment step, the pre-dip step, and the catalyzing step shown in FIG. , Used in a washing process, an accelerator process, and a washing process. As shown in FIGS. 3 and 4, the substrate processing apparatus 20 includes non-through holes 8a and 9a constituting the second connection holes 8 and 9 shown in FIG. A treatment tank 21 in which the formed inner layer substrate 2 is disposed, and a lid 22 that closes the treatment tank 21 are provided.
[0018]
The treatment tank 21 is made of a material that does not cause a chemical reaction with the treatment liquid, and is made of vinyl chloride, polypropylene, Teflon (registered trademark) , stainless steel, aluminum, or the like. Further, the processing tank 21 is provided with a disposing portion 23 in which the inner layer substrate 2 having an upper surface opened is disposed.
[0019]
As shown in FIGS. 3 and 4, the disposing portion 23 is formed to be slightly larger than the outer shape of the inner layer substrate 2. When the inner layer substrate 2 is disposed, the inner wall and the inner layer substrate constituting the disposing portion 23 are arranged. 2 is provided with a clearance 24. Specifically, as shown in FIG. 5, the arrangement portion 23 is formed so that the width W1 of the inner layer substrate 2 is substantially the same as the width in the longitudinal direction, and the width T1 in the short side direction is the thickness of the inner layer substrate 2. It is formed to be slightly larger than the length T2, and a clearance 24 is provided at least between the main surface of the inner layer substrate 2 and the inner wall. A clearance may also be provided between the end face in the width direction of the inner layer substrate 2 and the inner wall.
[0020]
In addition, the arrangement portion 23 is provided with a support member 30 for supporting the inner layer substrate 2 in a substantially vertical state and preventing the inner wall of the arrangement portion 23 from contacting the inner layer substrate 2.
[0021]
Since the clearance 24 is provided between the inner layer substrate 2 supported substantially vertically by the support member 30 and the inner wall constituting the disposing portion 23, the processing liquid flows on the surface of the inner layer substrate 2. become. Further, the clearance 24 is provided between the inner layer substrate 2 and the inner wall of the disposition portion 23, thereby preventing contact during processing. Further, since the inner layer substrate 2 is supported in a state of standing substantially vertically on the arrangement portion 23, the processing liquid in the non-through holes 8a and 9a provided on both surfaces of the inner layer substrate 2 can be quickly replaced. Can do.
[0022]
If the clearance 24 is too wide, it is necessary to flow a large amount of processing liquid. On the other hand, if the clearance 24 is too narrow, the inner layer substrate 2 may be bent during the processing and come into contact with the inner wall. It is determined by the relationship.
[0023]
Further, the lower side of the arrangement portion 23 is formed so as to be gradually narrowed so that the processing liquid can be collected in the processing liquid discharge pipe 25. The discharge pipe 25 discharges the processing liquid so that a pressure of about atmospheric pressure is applied to the processing space by the processing liquid while the processing space is always filled with the processing liquid during the processing. Therefore, the discharge pipe 25 is provided with a valve having a thickness that satisfies this condition or a valve that satisfies this condition.
[0024]
In addition, a flange portion 26 for forming a processing space sealed with the lid body 22 is formed around the side of the processing tank 21 where the lid body 22 is close.
[0025]
The lid 22 for forming a processing space with such a processing tank 21 is formed of the same material as the processing tank 21 described above. As shown in FIGS. 3 and 4, the lid 22 accommodates the upper side of the inner layer substrate 2 disposed in the placement portion 23, and a space portion 28 that forms a processing space 27 is formed with the placement portion 23. Has been. As shown in FIG. 6, the space 28 has a treatment liquid supply pipe 29 arranged so that the width direction matches the width W1 of the arrangement portion 23 of the treatment tank 21 from the dimension of the supply pipe 29. It is formed so as to gradually widen from the upper side connected to the lower side close to the treatment tank 21. Also, as shown in FIG. It is formed so that the thickness direction becomes narrower from the upper side to the lower side so as to match the dimension with the width T1. By forming the space portion 28 in this way, the processing liquid can flow over the entire inner layer substrate 2 disposed in the placement portion 23.
[0026]
Further, as shown in FIG. 6, the cross-sectional area of the opening serving as the connection portion of the supply pipe 29 in the space 28 is substantially the same as or smaller than the cross-sectional area of the supply pipe 29 in the width direction. Further, as shown in FIG. 7, the cross-sectional area of the supply pipe 29 is substantially the same as or smaller than the cross-sectional area of the supply pipe 29 in the thickness direction. That is, the cross-sectional area of the supply pipe 29 is formed so as to be substantially the same or larger than the cross-sectional area of the opening serving as the connection portion of the supply pipe 29 in the space portion 28, thereby ensuring the flow rate of the processing liquid. The internal pressure during processing can be secured.
[0027]
Further, in the space portion 28, as shown in FIGS. 6 and 7, the inner layer substrate 2 in which the processing liquid supplied from the supply tube 29 to the space portion 28 is disposed in the disposition portion 23 on the supply tube 29 side. The 1st baffle plate 31 for distributing in the width direction is provided. The first rectifying plate 31 has a substantially sharp shape on the supply pipe 29 side, that is, on the upstream side of the treatment liquid so that the treatment liquid supplied from the supply pipe 29 can be smoothly divided in the width direction of the inner layer substrate 2. Is formed.
[0028]
Further, as shown in FIG. 6 and FIG. 7, the treatment liquid distributed in the width direction of the inner layer substrate 2 disposed in the disposing portion 23 by the first rectifying plate 31 is disposed in the space portion 28. The 2nd baffle plate 32 for distributing in the thickness direction is provided. The upstream side of the second rectifying plate 32 is also substantially sharpened so that the processing liquid rectified in the width direction of the inner layer substrate 2 by the first rectifying plate 31 can be smoothly divided.
[0029]
The first rectifying plate 31 and the second rectifying plate 33 provided in the space portion 28 are provided with the second rectifying plate 32 on the upstream side of the processing liquid and the first rectifying plate 31 on the downstream side. It may be.
[0030]
The supply pipe 29 supplies the processing liquid at a flow rate such that when the lid 22 is close to the processing tank 21 and constitutes the processing space 27, the inside is in a state where a pressure of about atmospheric pressure is applied by the processing liquid. To do. The lid 22 is connected to a drive mechanism, and when the inner layer substrate 2 is disposed in the processing tank 21, the lid 22 moves in a direction close to the processing tank 21 to form a processing space 27. Yes.
[0031]
A flange portion 33 is provided around the lid 22 on the processing tank 21 side corresponding to the flange portion 26 provided in the processing tank 21.
[0032]
Next, the operation of the substrate processing apparatus 20 configured as described above will be described. First, as shown in FIG. 3, the inner layer substrate 2 is disposed in the disposing portion 23 in a state where the lid 22 is separated from the processing tank 21. As shown in FIG. 1C, the inner layer substrate 2 used here has

inner layer patterns

3 and 4 formed on both surfaces of the inner layer substrate 2, and insulating layers 6 and 7 are formed on the upper layer. Non-through holes 8a and 9a are formed at predetermined positions 6 and 7 so that the

inner layer patterns

3 and 4 face the outside. The inner layer substrate 2 is supported by the support member 30 so that a clearance 24 is provided in the arrangement portion 23 between the inner wall constituting the arrangement portion 23 and the main surface of the inner layer substrate 2. , Supported in a substantially vertical position.
[0033]
Next, the lid 22 is moved in the direction approaching the treatment tank 21 by the drive mechanism, thereby forming a treatment space 27 as shown in FIG. Here, the flange portion 33 of the lid body 22 is pressed against the flange portion 26 of the treatment tank 21, thereby preventing outside air from being mixed into the treatment space 27. In addition, you may make it stop the

flange parts

26 and 33 with packing etc. here for the processing tank 21 and the cover body 22. FIG.
[0034]
When the processing space 27 is configured, a predetermined processing liquid is supplied to the processing space 27 from the supply pipe 29. Here, first, the processing space 27 is filled with the processing liquid. Further, when the processing liquid continues to be supplied into the processing space 27 and the discharge amount of the processing liquid from the discharge pipe 25 is made smaller than the supply amount, a pressure of about atmospheric pressure is formed in the processing space 27. Then, a flow of the processing liquid from the supply pipe 29 to the discharge pipe 25 is formed. Here, as shown by an arrow F1 in FIG. 4, the flow of the processing liquid is distributed by the first rectifying plate 31 in the width direction of the inner layer substrate 2 disposed in the disposition portion 23, and the inner layer substrate 2 The treatment liquid flows at the same speed in the width direction. Next, the treatment liquid whose flow is distributed in the width direction of the inner layer substrate 2 arranged in the arrangement portion 23 by the first rectifying plate 31 is, as indicated by an arrow F2 in FIG. As a result, the flow is distributed in the thickness direction of the inner layer substrate 2 arranged in the arrangement portion 23. As a result, the processing liquid flows on both surfaces of the inner substrate 2 at the same flow rate. Thus, the processing liquid flows through the inner layer substrate 2 in the processing space 27 under the same conditions as a whole, and the processing proceeds at the same speed as a whole. Here, the flow velocity on the surface of the inner layer substrate 2 disposed in the disposing portion 23 is preferably 0.5 m / sec or more.
[0035]
When the processing of the inner layer substrate 2 in the processing space 27 is completed, first, the substrate processing apparatus 20 stops supplying the processing liquid from the supply pipe 29 and continues to discharge the processing liquid from the discharge pipe 25. All the processing liquid in the processing space 27 is discharged. Next, the lid body 22 is moved in a direction away from the processing tank 21 by the driving mechanism. As a result, the processed inner layer substrate 2 is taken out from the placement portion 23.
[0036]
In Table 1 below, the substrate processing apparatus 20 is used for pretreatment when performing electroless copper plating for forming the conductive layers 8b and 8b on the surfaces of the insulating layers 6 and 7 including the non-through holes 8a and 9a. The result of the experiment is shown. For comparison with the substrate processing apparatus 20, a tank in which a processing liquid is stored which is provided with a device for immersing an inner layer substrate in a tank in which a processing liquid used conventionally is stored and a nozzle for injecting the processing liquid. Experiments were conducted using a device that moved the interior horizontally with the inner layer substrate laid down.
[0037]
[Table 1]

[0038]
In addition, the clearance 24 between the inner wall which comprises the arrangement | positioning part 23, and the inner layer board | substrate 2 was set as shown in FIG. The flow rate of the processing liquid supplied from the supply pipe 29 is 45 liters / 30 sec (actual measurement: 1.5 liters / sec), and the flow rate of the processing liquid on the surface of the inner substrate 2 disposed in the disposing portion 23 (theoretical). Value) was set to 2.7 m / sec and 0.5 m / sec. In an apparatus that moves the inside of a tank in which a processing liquid is provided with a nozzle for injecting the processing liquid in a horizontal direction while the inner layer substrate is laid down, the flow rate of the liquid spray is 1 m / sec.
[0039]
In the immersion process using the apparatus for immersing the inner layer substrate in the tank in which the processing liquid is stored, if the processing time of each process is 60 sec, plating cannot be deposited near the bottom surfaces of the non-through holes 8a and 9a. It was.
[0040]
Moreover, in the conveyor process using the apparatus which moves the inside of the tank in which the treatment liquid provided with the nozzle for injecting the treatment liquid is stored in a state where the inner layer substrate is laid down, each process is performed from 60 sec to 30 sec. The plating could not be deposited on the lower surface side of the inner layer substrate 2.
[0041]
On the other hand, in the substrate processing apparatus 20 to which the present invention is applied, each step is performed for 30 sec when the flow rate of the processing liquid on the surface of the inner substrate 2 disposed in the disposing portion 23 is set to 2.7 m / sec. Only the plating process could be performed completely.
[0042]
Further, in the substrate processing apparatus 20, the plating process is completely performed even if each process is performed for 30 seconds by setting the flow rate of the processing liquid on the surface of the inner substrate 2 disposed in the disposing portion 23 to 0.5 m / sec. I was able to.
[0043]
As described above, in the substrate processing apparatus 20 to which the present invention is applied, the processing time can be shortened compared with the conventional apparatus. In the substrate processing apparatus 20, it can be confirmed that the flow rate of the processing liquid flowing on the surface of the inner layer substrate 2 disposed in the disposing portion 23 needs to be at least 0.5 m / sec.
[0044]
In the substrate processing apparatus 20 as described above, the processing is performed with the inner layer substrate 2 to be processed standing substantially vertically. Therefore, when processing the inner substrate 2 in a state where it is laid down substantially horizontally as in the prior art, it is difficult to replace the processing liquid due to air accumulation in the non-through holes 8a and 9a provided on the lower surface. However, in this substrate processing apparatus 20, the inner layer substrate 2 to be processed is processed in a state of being substantially vertical on the arrangement portion 23, so that the non-through holes 8 a provided on both surfaces of the inner layer substrate 2 are provided. The processing of 9a can be performed simultaneously, and the processing time can be shortened.
[0045]
In addition, the cover 22 distributes the processing liquid from the supply pipe 29 in the thickness direction of the inner layer substrate 2 and the first rectifying plate 31 that distributes the processing liquid from the supply layer 29 in the width direction of the inner layer substrate 2. Since the second rectifying plate 32 is provided, it is possible to flow the processing liquid at the same flow rate over the entire surface of the inner layer substrate 2, and the processing can proceed at the same speed. The inner layer substrate 2 arranged in the arrangement part 23 is supported by the support member 30 and a clearance 24 is provided between the inner wall of the arrangement part 23 and the processing. It is possible to prevent the inner layer substrate 2 from coming into contact with the inner wall of the arrangement portion 23 and being damaged.
[0046]
As described above, an example using the substrate processing apparatus 20 to which the present invention is applied when performing the pretreatment when performing electroless copper plating on the surfaces of the insulating layers 6 and 7 in which the non-through holes 8a and 9a are formed. However, the substrate processing apparatus 20 may be used for pretreatment when the conductive layer 5b is formed on the inner wall of the through hole 5a by electroless copper plating. In the above example, the case where one inner layer substrate 2 is accommodated in the processing space 27 has been described. However, the present invention accommodates a plurality of inner layer substrates in the processing space phase, and processes these inner layer substrates. By making it possible to carry out at once, the substrate processing efficiency can be further improved. Further, the number of conductive layers in the printed wiring board 1 is not particularly limited.
[0047]
In addition, the substrate processing apparatus 20 forms a through-hole or a non-through-hole with a drill or a laser, and then chemically removes the resin residue remaining inside, or pre-processing when printing cream solder on a land. It may be used in a preflux process or the like. Thus, it is effective to use the present invention in the pre-process of chemical treatment.
[0048]
【The invention's effect】
According to the present invention, processing is performed with the substrate to be processed standing substantially vertically. Therefore, when the substrate is processed in the state of being laid down substantially horizontally as in the prior art, it becomes difficult to replace the processing liquid in the connection hole provided in the lower surface. Since the processing is performed in a state in which the substrate to be performed is set substantially vertically on the arrangement portion, the processing of the connection holes provided on both surfaces of the substrate can be performed at the same time, and the processing time can be shortened.
[0049]
The lid is also provided with a first rectifying plate that distributes the processing liquid from the supply means in the width direction of the substrate disposed in the disposing portion and a second rectifying plate that distributes the processing liquid in the thickness direction of the substrate. Therefore, the processing liquid can be flowed at the same flow rate over the entire surface of the substrate, and the processing can proceed at the same speed. Furthermore, since a clearance is provided between the placement portion and the substrate placed here, it is possible to prevent the substrate from contacting and damaging the inner wall of the placement portion during processing.
[Brief description of the drawings]
BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a cross-sectional view for explaining a printed wiring board manufacturing process, (A) is a diagram showing a state in which an inner layer pattern is formed on both surfaces of an inner layer substrate, and (B) is an inner layer pattern formed. It is a figure which shows the state by which the insulating layer was formed on both surfaces of the made inner layer board | substrate, (C) shows the state which formed the non-through-hole for making interlayer connection in the insulating layer formed on the inner layer pattern It is a figure and (D) is a figure which shows the state which formed the outer layer pattern on the insulating layer.
FIG. 2 is a process diagram illustrating a pretreatment of electroless copper plating for forming an outer layer pattern.
FIG. 3 is a perspective view of a substrate processing apparatus to which the present invention is applied, and shows a state where a lid is separated from a processing tank.
FIG. 4 is a perspective view of a substrate processing apparatus to which the present invention is applied, and shows a state in which a lid is in close contact with a processing tank.
FIG. 5 is a plan view seen from the opening end side of the treatment tank.
FIG. 6 is a cross-sectional view of a lid.
FIG. 7 is a cross-sectional view of a lid.
FIG. 8 is a plan view for explaining a relationship between an arrangement portion configured in a processing tank and an inner layer substrate.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Printed wiring board, 2 Inner layer board, 3, 4 Inner layer pattern, 5 1st connection hole, 5a Through-hole, 5b Conductive layer, 6,7 Insulating layer, 8, 9 2nd connection hole, 8a, 9a Non-through Hole, 8b, 9b Conductive layer, 10, 11 Outer layer pattern, 20 Substrate processing device, 21 Processing tank, 22 Lid, 23 Disposition portion, 24 Clearance, 25 Discharge pipe, 26 Flange portion, 27 Processing space, 28 Space portion , 29 Supply pipe, 30 Support member, 31 1st rectifier plate, 32 2nd rectifier plate, 33 Flange part

Claims

A treatment tank disposed in a state in which the substrate on which the connection hole is formed is erected so that a clearance is provided between the inner wall of the disposition portion and the disposition portion provided inside;
A lid that is provided on the upper side of the processing tank and that constitutes a processing space of the substrate by closing the arrangement portion;
A supply means provided on the lid for supplying a processing liquid into the processing space;
A discharge means provided in the processing tank and discharging the processing liquid stored in the processing space;
The aforementioned lid member, the upstream side of the processing liquid is formed on the pointed, the process liquid supplied from the supply means, first to expand the width direction of the substrate disposed in the processing space A rectifying plate and an upstream side of the processing liquid are formed in a sharp shape, and the processing liquid rectified in the width direction of the substrate by the first rectifying plate in the thickness direction of the substrate disposed in the processing space. A second baffle plate for spreading,
The size of the opening for supplying the processing liquid to the processing space of the supply means is formed to be substantially the same as or larger than the size of the opening connected to the supply means of the processing space,
The lid is formed wider from the side where the supply means is connected toward the side close to the treatment tank,
The said processing tank is a substrate processing apparatus currently formed so that a width | variety may become narrow toward the said discharge means .

Flow rate of the treatment liquid flowing through the substrate surface during processing, the substrate processing apparatus according to claim 1, wherein at 0.5 m / sec or more.

The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is used in a pretreatment of a chemical plating process.

The substrate processing apparatus according to claim 1, which is used in a desmear process.

2. The substrate processing apparatus according to claim 1, which is used in preflux processing.

Arrange the substrate in which the connection hole is formed in the disposition portion provided inside the treatment tank in a standing state so that a clearance is provided between the inner wall constituting the disposition portion,
The placement portion is closed with a lid to form a processing space for the substrate,
From the side where the supply means for supplying the treatment liquid to the treatment space is connected, the width is increased toward the side close to the treatment tank which is formed so as to become narrower toward the discharge means for the treatment liquid. A size of an opening provided on the formed lid body for supplying the processing liquid to the processing space of the supplying means for supplying the processing liquid to the processing space is connected to the supply means of the processing space. The processing liquid is supplied to the processing space through the opening of the supply means and the opening of the processing space;
When supplying the processing liquid to the processing space, the processing liquid supplied from the supply means is a first rectifying plate provided on the lid and formed upstream of the processing liquid in a substantially sharp shape. Is spread in the width direction of the substrate disposed in the processing space, and the processing liquid rectified in the width direction of the substrate by the first rectifying plate is distributed in the processing space by the second rectifying plate. Spread in the thickness direction of the installed board ,
Filled with the treatment liquid to the treatment space, the treatment liquid is discharged through said discharge means from said treating tank side while fed from the lid side, processing the substrate to generate a flow to the substrate surface Substrate processing method.

Flow rate of the treatment liquid flowing through the substrate surface during processing, the substrate processing method according to claim 6, wherein at 0.5 m / sec or more.

The substrate processing method of Claim 6 performed by the pre-process of a chemical plating process.

The substrate processing method of Claim 6 performed by a desmear process.

The substrate processing method of Claim 6 used by a preflux process.