JP2002232151A - System and method for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To surely perform processing, while shortening the processing time, by spreading processing liquid quickly, even in fine contact holes. SOLUTION: The system for processing a substrate comprises a processing tank 21 disposed at an internal disposing section 23, while arranging an inner layer substrate 2 erect, provided with via holes 8a and 9a, a cover 22 being applied to the disposing section 23 and defining the processing space of the inner layer substrate 2, a pipe 29 for supplying a processing liquid into a processing space 27, and a pipe 25 for discharging the processing liquid stored in the processing space 27. The cover 22 is provided with a first equalizing plate 31 for spreading the processing liquid supplied from the supplying pipe 29, in the widthwise direction of the inner layer substrate 2 disposed in the processing space 27, and a second equalizing plate 31 for spreading the processing liquid in the thickness direction of the inner layer substrate 2, disposed in the processing space 27.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method for processing a surface of a substrate having connection holes, and more particularly to a substrate processing apparatus capable of reliably processing not only the substrate surface but also the inside of the connection holes. And a substrate processing method.

[0002]

2. Description of the Related Art There is a printed wiring board formed by a build-up method. In this printed wiring board, a first layer wiring pattern is formed on at least one surface of the inner layer substrate, an insulating layer is formed on the surface on which the first layer wiring pattern is formed, and then a first layer wiring pattern is formed. A non-penetrating connection hole for exposing the wiring pattern to the outside is formed.
It is formed by forming a wiring pattern of the second layer in which the wiring pattern of the layer and the interlayer connection are formed.

Here, a second-layer wiring pattern provided on the insulating layer is formed by electroless copper plating. Therefore, as a pretreatment for electroless copper plating, a conditioner treatment step of adjusting the charge with an activator, Pd-Sn, etc. are applied to the surface of the insulating layer on which the non-penetrating connection holes are formed. A pre-catalyzing treatment step to be performed, an accelerator treatment for removing Sn compounds to give Pd activity, and the like are performed.

[0004] As an apparatus for performing these processes, an apparatus for immersing an inner layer substrate having a connection hole in a processing tank storing the processing liquid or a processing liquid provided with a nozzle for spraying the processing liquid is stored. There is a device for moving an inner substrate having connection holes formed therein in a horizontal direction while lying down in a processing tank.

[0005]

However, an apparatus for immersing an inner layer substrate having a connection hole in a processing tank in which a processing solution is stored requires a long time until the processing solution is diffused and replaced in the connection hole. And the substrate had to be immersed for several minutes or more. Therefore, the pretreatment of the electroless copper plating cannot be performed quickly.

[0006] Further, an apparatus for horizontally moving a processing tank provided with a nozzle for ejecting the processing liquid and storing the processing liquid in a state in which the inner layer substrate having the connection holes formed thereon is laid down, is generally used. It becomes large. Further, in this device, the insulating layer may be damaged because the insulating layer contacts the conveyor. In addition, air may accumulate in non-penetrating connection holes provided on the lower surface of the substrate, and pre-treatment may not be performed reliably. To prevent this, it is necessary to turn the substrate over, so that the pretreatment cannot be performed quickly.

In particular, in the case of a substrate on which a fine pattern is formed, the size of the connection hole is also reduced, and it becomes difficult to diffuse the processing liquid into the connection hole. Therefore, the above-described apparatus requires more time.

It is an object of the present invention to provide a substrate processing apparatus capable of quickly dispersing a processing liquid into a connection hole even if the connection hole is minute, thereby performing processing reliably and shortening the processing time. And a substrate processing method.

Another object of the present invention is to reduce the size of a substrate processing apparatus for processing the surface of a substrate having connection holes.

[0010]

In order to solve the above-mentioned problems, the substrate processing apparatus according to the present invention comprises a substrate provided with a connection hole in an internally disposed portion. A processing tank disposed in an upright state so that a clearance is provided between the inner wall and the processing tank, and provided above the processing tank;
A lid that constitutes the processing space of the substrate by closing the disposing portion, a supply means provided in the lid, for supplying a processing liquid into the processing space, and a processing tank provided in the processing tank and stored in the processing space Discharging means for discharging the processing liquid. The lid has a first rectifying plate for spreading the processing liquid supplied from the supply unit in a width direction of the substrate provided in the processing space, and a thickness direction of the substrate provided in the processing space. And a second rectifying plate for widening.

Further, in order to solve the above-mentioned problems, the substrate processing method according to the present invention provides a substrate provided with a connection hole in an installation portion provided inside a processing bath, and an inner wall constituting the installation portion. It is disposed in an upright state so that a clearance is provided between it and the disposed part is closed with a lid, a processing space for the substrate is formed, the processing space is filled with the processing liquid, and the processing liquid is covered. The substrate is discharged from the processing tank side while being supplied from the body side, and a flow is generated on the substrate surface to process the substrate.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate processing apparatus and a substrate processing method to which the present invention is applied will be described with reference to the drawings.

First, prior to description of a substrate processing apparatus and a substrate processing method to which the present invention is applied, a printed wiring board will be described with reference to FIG.

The printed wiring board 1 is a multilayer printed wiring board in which a plurality of conductive layers are stacked by a build-up method, and has an inner layer board 2 as shown in FIG. The inner substrate 2 is, for example, an insulating substrate in which glass fiber is impregnated with an epoxy resin or the like, and has inner layer patterns 3 and 4 formed on both surfaces. These inner layer patterns 3 and 4 are formed by exposing, developing, and etching the copper foil bonded to the insulating substrate 2. The inner layer pattern 3 and the inner layer pattern 4 are electrically connected by a first connection hole 5 penetrating the insulating substrate 2 by a drill or the like. The first connection hole 5 forms a through hole 5a formed in the insulating substrate 2 by a drill, a laser or the like at a predetermined position before patterning the copper foil.
The conductive layer 5b is formed on the front surface of the copper foil including the inner wall of the through hole 5a by electroless copper plating or the like, and the conductive layer 5b is used to form the inner layer pattern 3 and the inner layer formed on each surface of the insulating substrate 2. The electrical connection with the pattern 4 is achieved.

As shown in FIG. 1B, insulating layers 6 and 7 are formed on the inner layer patterns 3 and 4 by a thermosetting resin, for example, an epoxy resin. Insulating layers 6, 7
As shown in FIGS. 1C and 1D, after thermosetting, second connection holes 8 and 9 for establishing interlayer connection with an outer layer pattern formed in the next step are predetermined. Formed in position. The second connection holes 8 and 9 are formed by first forming non-through holes 8a and 9a in the insulating layers 6 and 7 with the laser or the like to expose the inner layer patterns 3 and 4 to the outside, and then forming the non-through holes 8a and 9a. The conductive layers 8b and 9b are formed by electroless copper plating on the surfaces of the insulating layers 6 and 7 including the inner walls of the above. In addition, the substrate processing apparatus to which the present invention is applied is used for the pre-processing of the electroless copper plating. By exposing, developing, and etching the conductive layer on the insulating layers 6 and 7, the outer layer patterns 10 and 11 connected to the inner layer patterns 3 and 4 are formed.

By the way, in the pretreatment for applying the electroless copper plating for forming the second connection holes 8 and 9, first, as shown in FIG. 2, the substrate on which the non-through holes 8 a and 9 a are formed is formed. On the other hand, first, a conditioner process for adjusting the charge with an activator is performed, then a water washing process for washing the activator with water is performed, and then a pre-dip process for removing pure water attached to the substrate in the water washing is performed. Is performed, and then a catalyst treatment is performed by adsorbing the catalyst on the surfaces of the insulating layers 6 and 7 with a solution such as Pd (palladium) -Sn (tin).
A water washing process of washing the solution adhering to the substrate by the catalizing process is performed, then an accelerator process for removing Sn to activate Pd is performed, and then a water washing process of washing the solution with water is performed.

The substrate processing apparatus 20 applied to the present invention comprises:
The pretreatment of such electroless copper plating, specifically, the conditioner treatment step, the water washing treatment step shown in FIG.
It is used in a pre-dipping step, a catalizing step, a washing step, an accelerator step, and a washing step. In the substrate processing apparatus 20, as shown in FIGS. 3 and 4, the non-through holes 8a and 9a forming the second connection holes 8 and 9 shown in FIG. A processing tank 21 in which the formed inner substrate 2 is provided, and a lid 22 for closing the processing tank 21 are provided.

The processing tank 21 is formed of a material that does not cause a chemical reaction with the processing liquid, and is formed of vinyl chloride, polypropylene, Teflon (registered trademark), stainless steel, aluminum, or the like. Further, the processing tank 21 is provided with an arrangement portion 23 in which the inner layer substrate 2 having an open upper surface is arranged.

As shown in FIGS. 3 and 4, the disposing portion 23 is formed slightly larger than the outer shape of the inner substrate 2.
When the inner substrate 2 is provided, a clearance 24 is provided between the inner wall constituting the mounting portion 23 and the inner substrate 2. Specifically, as shown in FIG. 5, the disposing portion 23 is formed such that the width W1 of the inner layer substrate 2 is substantially equal to the width in the longitudinal direction, and the width T1 in the short side direction is
Is formed so as to be slightly larger than the thickness T2 of at least the clearance 24 between the main surface of the inner substrate 2 and the inner wall.
Is provided. Note that a clearance may be provided between the end surface of the inner layer substrate 2 in the width direction and the inner wall.

Further, the mounting portion 23 is provided with a support member 30 for supporting the inner substrate 2 in a substantially vertical state and preventing the inner wall of the mounting portion 23 from contacting the inner substrate 2. ing.

Since a clearance 24 is provided between the inner layer substrate 2 supported substantially vertically by the support member 30 and the inner wall constituting the disposition portion 23, the processing liquid is applied to the surface of the inner layer substrate 2. Will flow. Further, the clearance 24 is provided between the inner substrate 2 and the inner wall of the disposition portion 23, so that it is possible to prevent the inner layer substrate 2 from contacting during processing.
Further, since the inner substrate 2 is supported by the disposition portion 23 in a state of being substantially vertically erected, the processing liquid in the non-through holes 8a and 9a provided on both surfaces of the inner substrate 2 can be quickly replaced. Can be.

If the clearance 24 is too wide, it is necessary to flow a large amount of the processing liquid. On the other hand, if the clearance 24 is too narrow, the inner substrate 2 may bend during the processing and come into contact with the inner wall. It is determined by the relationship of the thickness and the like.

The lower side of the disposition portion 23 is formed so as to gradually become narrower so that the processing liquid can be collected in the processing liquid discharge pipe 25. The discharge pipe 25 discharges the processing liquid such that the processing space is always filled with the processing liquid during the processing and the processing liquid is applied with a pressure of about the atmospheric pressure to the processing space. Therefore, the discharge pipe 25 is provided with a pipe having a thickness which satisfies this condition or a valve which satisfies this condition.

Further, a flange 26 for forming a processing space sealed with the lid 22 is formed around the side of the processing tank 21 on which the lid 22 is approached.

The lid 22 for forming a processing space with the processing tank 21 is formed of the same material as the processing tank 21 described above. As shown in FIGS. 3 and 4, the lid body 22 accommodates the upper side of the inner layer substrate 2 disposed in the disposition portion 23 and forms a processing space 27 with the disposition portion 23.
Are formed. The space 28 is, as shown in FIG.
In the width direction, the arrangement portion 2 of the processing tank 21 is
3 is formed so as to gradually increase in width from the upper side where the processing liquid supply pipe 29 is connected to the lower side which is close to the processing tank 21 so as to match the dimension to the width W1 in the longitudinal direction of FIG. As shown in FIG.
3 is formed so that the thickness direction becomes narrower from the upper side to the lower side so as to match the width T1 in the short side direction. The space 28 is formed in this way, so that the processing liquid can flow through the entire inner substrate 2 disposed in the disposed part 23.

As shown in FIG. 6, the diameter of the opening of the space 28, which is the connection portion of the supply pipe 29, is substantially the same as the inner diameter of the supply pipe 29 or smaller than the diameter of the supply pipe 29 in the width direction. As shown in FIG. 7, it is formed to be substantially the same as the inner diameter of the supply pipe 29 or smaller than the diameter of the supply pipe 29 in the thickness direction. That is, the inner diameter of the supply pipe 29 is formed so as to be substantially the same as or larger than the diameter of the opening serving as the connection part of the supply pipe 29 in the space 28, so that the flow rate of the processing liquid is secured. The internal pressure at the time can be secured.

As shown in FIGS. 6 and 7, the space 28 is connected to the supply pipe 29 from the supply pipe 29 by the space 28.
A first rectifying plate 31 is provided for distributing the processing liquid supplied to the inner substrate 2 in the width direction of the inner layer substrate 2 disposed in the disposing section 23. The first current plate 31 is smoothly connected to the supply pipe 2.
The supply pipe 29 side, that is, the upstream side of the processing liquid, is formed in a substantially sharp shape so that the processing liquid supplied from 9 can be divided in the width direction of the inner layer substrate 2.

As shown in FIGS. 6 and 7, the processing liquid distributed in the width direction of the inner substrate 2 disposed in the disposing portion 23 by the first rectifying plate 31 is filled in the space portion 28. A second rectifying plate 32 for distributing in the thickness direction of the inner substrate 2 is provided. The second rectifying plate 32 is also formed to have a substantially sharp upstream side so that the processing liquid rectified in the width direction of the inner layer substrate 2 by the first rectifying plate 31 can be smoothly divided.

The first rectifying plate 31 and the second rectifying plate 33 provided in the space 28 are provided with a second rectifying plate 32 on the upstream side of the processing liquid and a first rectifying plate 31 on the downstream side. May be provided.

When the lid 22 is close to the processing tank 21 and constitutes the processing space 27, the supply pipe 29 is processed at a flow rate such that the processing liquid is applied to the inside thereof at about atmospheric pressure. Supply liquid. The lid 22 is connected to a driving mechanism. When the inner substrate 2 is disposed in the processing tank 21, the lid 22 moves in a direction approaching the processing tank 21 to form a processing space 27. I have.

A flange 33 is provided around the lid 22 on the side of the processing tank 21 in correspondence with the flange 26 provided in the processing tank 21.

Next, the operation of the substrate processing apparatus 20 configured as described above will be described. First, as shown in FIG. 3, the inner substrate 2 is disposed in the disposing section 23 with the lid 22 being separated from the processing bath 21. The inner substrate 2 used here is, as shown in FIG.
Patterns 3 and 4 are formed on both sides of the substrate, insulating layers 6 and 7 are formed thereon, and non-through holes 8a and 9a are formed at predetermined positions of the insulating layers 6 and 7 so that the inner patterns 3 and 4 face the outside. It was done. The inner substrate 2 is supported by the support member 30 so that a clearance 24 is provided in the disposing portion 23 between the inner wall forming the disposing portion 23 and the main surface of the inner substrate 2. , And is supported in a substantially vertical state.

Next, the lid 22 is moved in the direction approaching the processing tank 21 by the driving mechanism, so that the lid 22 shown in FIG.
The processing space 27 is configured as shown in FIG. Here, the flange portion 33 of the lid 22 is connected to the flange portion 26 of the processing tank 21.
, Thereby preventing outside air from entering the processing space 27. Here, the processing tank 21 and the lid 22 may be configured such that the flange portions 26 and 33 are stopped by packing or the like.

When the processing space 27 is formed, the supply pipe 29
After that, a predetermined processing liquid is supplied to the processing space 27. Here, first, the processing space 27 is filled with a processing liquid.
Further, by further supplying the processing liquid into the processing space 27 and making the discharge amount of the processing liquid from the discharge pipe 25 smaller than the supply amount, a pressure around the atmospheric pressure is formed in the processing space 27 and From the processing solution supply pipe 29 to the discharge pipe 2
A flow to 5 is formed. Here, as shown by an arrow F1 in FIG. 4, the flow of the processing liquid is distributed by the first rectifying plate 31 in the width direction of the inner substrate 2 disposed in the disposing portion 23, and The processing liquid flows at the same speed in the width direction. Next, as shown by an arrow F2 in FIG. Thereby, the flow is distributed in the thickness direction of the inner layer substrate 2 arranged in the arrangement section 23. by this,
The processing liquid flows at the same flow rate on both surfaces of the inner substrate 2. Thus, the processing liquid flows through the entire inner layer substrate 2 in the processing space 27 under the same conditions, and the entire processing proceeds at the same speed. Here, the flow velocity on the surface of the inner layer substrate 2 provided in the mounting portion 23 is preferably 0.5
m / sec or more.

When the processing of the inner substrate 2 in the processing space 27 is completed, first, the substrate processing apparatus 20 stops supplying the processing liquid from the supply pipe 29 and continues to discharge the processing liquid from the discharge pipe 25. By doing so, all the processing liquid in the processing space 27 is discharged. Next, the lid 22 is moved in a direction away from the processing tank 21 by the driving mechanism. As a result, the processed inner layer substrate 2 is taken out of the disposing unit 23.

Table 1 below shows that the substrate processing apparatus is used for pre-processing when performing electroless copper plating for forming conductive layers 8b, 8b on the surfaces of insulating layers 6, 7 including non-through holes 8a, 9a. The experimental results when using No. 20 are shown. For comparison with the substrate processing apparatus 20, a device for immersing the inner layer substrate in a tank for storing the processing liquid and a tank for storing the processing liquid provided with a nozzle for jetting the processing liquid are used. An experiment was performed using a device that moves the inside in the horizontal direction with the inner layer substrate lying down.

[0037]

[Table 1]

The clearance 24 between the inner wall constituting the disposing portion 23 and the inner substrate 2 was set as shown in FIG. The flow rate of the processing liquid supplied from the supply pipe 29 is set to 45 liters / 30 sec (actual measurement: 1.5 liter / sec), and the flow rate (theoretical rate) of the processing liquid on the surface of the inner substrate 2 disposed in the disposing section 23 is set. Value) is 2.7 m / sec.
And 0.5 m / sec. In a device that moves horizontally in a tank provided with a nozzle for injecting the processing liquid and in which the processing liquid is stored, with the inner substrate lying down, the flow rate of the liquid spray is 1 m / sec.

In the immersion processing using the apparatus for immersing the inner layer substrate in the tank in which the processing liquid is stored, the processing time of each step is set at 6 times.
At 0 sec, plating could not be deposited near the bottom surfaces of the non-through holes 8a and 9a.

In a conveyor process using a device for horizontally moving an inner substrate lying down in a tank in which a processing liquid is stored and provided with a nozzle for injecting the processing liquid, each step is started from 60 seconds. When it was set to 30 sec, plating could not be deposited on the lower surface side of the inner layer substrate 2.

On the other hand, in the substrate processing apparatus 20 to which the present invention is applied, when the flow rate of the processing liquid on the surface of the inner layer substrate 2 provided in the mounting section 23 is set to 2.7 m / sec, each process is performed. Was carried out for only 30 seconds to complete the plating process.

In the substrate processing apparatus 20, the disposing unit 23
The plating process could be completely performed only by setting the flow rate of the processing solution on the surface of the inner layer substrate 2 provided at 0.5 m / sec and performing each process for 30 seconds.

As described above, in the substrate processing apparatus 20 to which the present invention is applied, the processing time can be reduced as compared with the conventional apparatus. Further, in the substrate processing apparatus 20, the disposing unit 23
It can be confirmed that the flow rate of the processing liquid flowing on the surface of the inner layer substrate 2 disposed at a minimum of 0.5 m / sec or more is required.

In the substrate processing apparatus 20 as described above, the processing is performed in a state where the inner layer substrate 2 to be processed is set up substantially vertically. Therefore, when the processing of the inner substrate 2 is performed in a state where the inner layer substrate 2 is laid substantially horizontally as in the related art, the processing liquid is hardly replaced due to the accumulation of air in the non-through holes 8a and 9a provided on the lower surface. However, in the substrate processing apparatus 20, the inner layer substrate 2 to be processed is provided by the disposing unit 2
Since the processing is performed in a state of being set substantially vertically to 3, the processing of the non-through holes 8a and 9a provided on both surfaces of the inner layer substrate 2 can be performed at the same time, and the processing time can be reduced.

The first rectifying plate 31 for distributing the processing liquid from the supply pipe 29 in the width direction of the inner substrate 2 disposed in the disposing portion 23 and the thickness of the inner substrate 2 are provided on the lid 22. Since the second rectifying plate 32 for distributing in the direction is provided, the processing liquid can flow at the same flow rate over the entire surface of the inner layer substrate 2, and the processing can proceed at the same speed. Note that the inner substrate 2 provided in the mounting portion 23 is
0, and a clearance 24 is provided between itself and the inner wall constituting the arrangement portion 23.
During processing, the inner substrate 2 can be prevented from contacting and damaging the inner wall of the disposition portion 23.

As described above, the substrate processing apparatus 20 to which the present invention is applied when performing the pretreatment when performing the electroless copper plating on the surfaces of the insulating layers 6 and 7 where the non-through holes 8a and 9a are formed.
However, the substrate processing apparatus 20 may be used for pretreatment when the conductive layer 5b is formed on the inner wall of the through hole 5a by electroless copper plating. Further, in the above example, the case where one inner layer substrate 2 is stored in the processing space 27 has been described. However, the present invention stores a plurality of inner layer substrates in the processing space phase, and performs processing of these inner layer substrates. By performing the operations at one time, the efficiency of substrate processing can be further improved. Further, the number of conductive layers in the printed wiring board 1 is not particularly limited.

In the substrate processing apparatus 20, after forming a through-hole or a non-through-hole with a drill or a laser, a desmear process for chemically removing the resin residue remaining inside or when printing cream solder on a land. May be used in a pre-flux step or the like which is a pretreatment of the above. Thus, it is effective to use the present invention in a step before the chemical treatment.

[0048]

According to the present invention, the processing is performed in a state where the substrate to be processed is set up substantially vertically. Therefore, when the substrate is processed in a state of being laid substantially horizontally as in the related art, it is difficult to replace the processing liquid in the connection hole provided on the lower surface. Since the processing is performed in a state in which the substrate for performing the process is placed substantially vertically on the disposition portion, the processing of the connection holes provided on both sides of the substrate can be performed at the same time, and the processing time can be reduced.

Further, a first liquid for distributing the processing liquid from the supply means in the width direction of the substrate disposed on the disposing portion is provided on the lid.
Since the current rectifying plate and the second rectifying plate for distributing in the thickness direction of the substrate are provided, the processing liquid can be flowed at the same flow rate over the entire surface of the substrate, and the processing can be performed at the same speed. Can be. Further, since a clearance is provided between the disposition portion and the substrate disposed here, it is possible to prevent the substrate from contacting the inner wall of the disposition portion and being damaged during processing.

[Brief description of the drawings]

1A and 1B are cross-sectional views illustrating a manufacturing process of a printed wiring board, wherein FIG. 1A is a diagram showing a state in which an inner layer pattern is formed on both surfaces of an inner layer substrate, and FIG. FIG. 4C is a diagram showing a state in which insulating layers are formed on both surfaces of the formed inner layer substrate, and FIG. 4C shows a state in which non-through holes for interlayer connection are formed in the insulating layer formed on the inner layer pattern; It is a figure, (D) is a figure showing the state where the outer layer pattern was formed on the insulating layer.

FIG. 2 is a process diagram illustrating a pretreatment of electroless copper plating for forming an outer layer pattern.

FIG. 3 is a perspective view of the substrate processing apparatus to which the present invention is applied, showing a state in which a lid is separated from a processing tank.

FIG. 4 is a perspective view of a substrate processing apparatus to which the present invention is applied, showing a state in which a lid is in close contact with a processing tank.

FIG. 5 is a plan view as seen from the opening end side of the processing tank.

FIG. 6 is a sectional view of a lid.

FIG. 7 is a sectional view of a lid.

FIG. 8 is a plan view for explaining a relationship between an arrangement portion formed in a processing tank and an inner layer substrate.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 printed wiring board, 2 inner layer board, 3, 4 inner layer pattern, 5 first connection hole, 5 a through hole, 5 b conductive layer, 6, 7 insulating layer, 8, 9 second connection hole, 8 a, 9
a non-through hole, 8b, 9b conductive layer, 10, 11 outer layer pattern, 20 substrate processing apparatus, 21 processing tank, 22 lid, 23 disposition, 24 clearance, 25 discharge pipe, 26 flange, 27 processing space, 28 space portion, 29 supply pipe, 30 support member, 31 first straightening plate, 32 second straightening plate, 33 flange portion

[Procedure amendment]

[Submission date] February 15, 2001 (2001.2.1)
5)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction contents]

As shown in FIG. 6, the cross-sectional area of the opening of the space 28, which is the connecting portion of the supply pipe 29, is substantially the same as the cross-sectional area of the supply pipe 29 in the width direction.
And, as shown in FIG. 7, formed so as to be substantially the same as or smaller than the cross-sectional area of the supply pipe 29 in the thickness direction. I have. That is, the cross-sectional area of the supply pipe 29 is formed so as to be substantially the same as or larger than the cross-sectional area of the opening serving as the connection part of the supply pipe 29 in the space 28, thereby ensuring the flow rate of the processing liquid. , So that the internal pressure during processing can be ensured.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazuo Shinsaka 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 5E317 AA24 BB01 BB11 CC31 CD01 CD11 CD32 CD36 GG17 5E343 AA02 AA07 AA11 BB21 EE02 EE12 FF23 GG20 5E346 FF02 FF03 GG16 HH21 HH33

Claims (12)

[Claims] 1. A substrate provided with a connection hole is disposed in an arrangement portion provided therein such that a clearance is provided between the substrate and an inner wall constituting the arrangement portion. A processing tank, a lid provided above the processing tank, and forming a processing space for the substrate by closing the disposing portion; and a lid provided on the lid and supplying a processing liquid into the processing space. Supply means, and a discharge means provided in the processing tank for discharging the processing liquid stored in the processing space, wherein the lid is provided with a processing liquid supplied from the supply means,
A first rectifying plate for expanding in a width direction of the substrate disposed in the processing space and a second rectifying plate for expanding in a thickness direction of the substrate disposed in the processing space are provided. Substrate processing equipment. 2. The substrate processing apparatus according to claim 1, wherein the flow rate of the processing liquid flowing on the substrate surface during the processing is 0.5 m / sec or more. 3. The substrate processing apparatus according to claim 1, wherein the lid is formed so as to widen from a side to which the supply means is connected to a side close to the processing tank. 4. The substrate processing apparatus according to claim 1, wherein said processing tank is formed so as to decrease in width toward said discharge means. 5. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is used in a pretreatment of a chemical plating process. 6. The substrate processing apparatus according to claim 1, which is used in desmear processing. 7. The substrate processing apparatus according to claim 1, which is used in a pre-flux processing. 8. A substrate provided with a connection hole is disposed in an arrangement portion provided inside the processing tank in a state where clearance is provided between the substrate and an inner wall constituting the arrangement portion. And closing the disposing portion with a lid, forming a processing space for the substrate, filling the processing space with a processing liquid, discharging the processing liquid from the processing tank side while supplying the processing liquid from the lid side, A substrate processing method for processing a substrate by generating a flow on a substrate surface. 9. The substrate processing method according to claim 8, wherein the flow rate of the processing liquid flowing on the substrate surface during the processing is 0.5 m / sec or more. 10. The substrate processing method according to claim 8, wherein the substrate processing method is performed in a pretreatment before the chemical plating treatment. 11. The substrate processing method according to claim 8, wherein the substrate processing method is performed by desmear processing. 12. The substrate processing method according to claim 8, which is used in a pre-flux processing.