JP4624207B2 - 成膜方法及び成膜装置 - Google Patents

成膜方法及び成膜装置 Download PDF

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Publication number
JP4624207B2
JP4624207B2 JP2005225709A JP2005225709A JP4624207B2 JP 4624207 B2 JP4624207 B2 JP 4624207B2 JP 2005225709 A JP2005225709 A JP 2005225709A JP 2005225709 A JP2005225709 A JP 2005225709A JP 4624207 B2 JP4624207 B2 JP 4624207B2
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Japan
Prior art keywords
gas
film
gate electrodes
film forming
oxygen
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Expired - Fee Related
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JP2005225709A
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Japanese (ja)
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JP2007042884A (ja
JP2007042884A5 (enExample
Inventor
一秀 長谷部
充弘 岡田
採虎 金
淳 小川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2005225709A 2005-08-03 2005-08-03 成膜方法及び成膜装置 Expired - Fee Related JP4624207B2 (ja)

Priority Applications (1)

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JP2005225709A JP4624207B2 (ja) 2005-08-03 2005-08-03 成膜方法及び成膜装置

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JP2005225709A JP4624207B2 (ja) 2005-08-03 2005-08-03 成膜方法及び成膜装置

Publications (3)

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JP2007042884A JP2007042884A (ja) 2007-02-15
JP2007042884A5 JP2007042884A5 (enExample) 2008-08-14
JP4624207B2 true JP4624207B2 (ja) 2011-02-02

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JP2005225709A Expired - Fee Related JP4624207B2 (ja) 2005-08-03 2005-08-03 成膜方法及び成膜装置

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5559988B2 (ja) 2009-06-03 2014-07-23 東京エレクトロン株式会社 シリコン酸化膜用成膜原料およびそれを用いたシリコン酸化膜の成膜方法
DE102010015149A1 (de) * 2010-04-16 2011-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zum Beschichten eines Substrates innerhalb einer Vakuumkammer mittels plasmaunterstützter chemischer Dampfabscheidung
JP5679581B2 (ja) 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
JP2015056632A (ja) 2013-09-13 2015-03-23 東京エレクトロン株式会社 シリコン酸化膜の製造方法
JP6196106B2 (ja) 2013-09-13 2017-09-13 東京エレクトロン株式会社 シリコン酸化膜の製造方法
JP2014064039A (ja) * 2013-12-25 2014-04-10 Tokyo Electron Ltd 成膜方法および成膜装置
US10458016B2 (en) 2015-12-25 2019-10-29 Tokyo Electron Limited Method for forming a protective film
JP6523185B2 (ja) 2016-01-29 2019-05-29 東京エレクトロン株式会社 成膜方法
JP6602261B2 (ja) 2016-05-23 2019-11-06 東京エレクトロン株式会社 成膜方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115911A (ja) * 1994-08-25 1996-05-07 Sony Corp 半導体装置の製造方法
JPH08227888A (ja) * 1995-02-21 1996-09-03 Sony Corp 誘電体膜の形成方法
US5710079A (en) * 1996-05-24 1998-01-20 Lsi Logic Corporation Method and apparatus for forming dielectric films
JP4285184B2 (ja) * 2003-10-14 2009-06-24 東京エレクトロン株式会社 成膜方法及び成膜装置
JP4595702B2 (ja) * 2004-07-15 2010-12-08 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4694209B2 (ja) * 2005-01-05 2011-06-08 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

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