JP4622282B2 - Positive photosensitive resin composition, semiconductor device and display element - Google Patents

Description

  The present invention relates to a positive photosensitive resin composition, a semiconductor device, and a display element.

Conventionally, polyimide resin having excellent heat resistance and excellent electrical characteristics, mechanical characteristics, and the like has been used for the surface protection film and interlayer insulating film of the semiconductor element. There is a demand for lowering the curing temperature as well as significant improvements in characteristics such as heat cycle resistance and heat shock resistance due to the thinning and downsizing of semiconductor devices and the transition to surface mounting by solder reflow, etc. Resins have become necessary.
On the other hand, a technique for imparting photosensitivity to the polyimide resin itself has attracted attention, and examples thereof include a photosensitive polyimide resin represented by the following formula (6).

If this is used, a part of the pattern creation process can be simplified, and there is an effect of shortening the process and improving the yield. However, since a solvent such as N-methyl-2-pyrrolidone is required for development, safety and handling There is a problem with sex.
Therefore, a positive photosensitive resin composition that can be developed with an alkaline aqueous solution has recently been developed. For example, Patent Document 1 discloses a positive photosensitive resin composition composed of a polybenzoxazole precursor as a base resin and a diazoquinone compound as a photosensitive material. This has high heat resistance, excellent electrical properties, and fine processability, and has the potential as a resin composition for interlayer insulation as well as for wafer coating. The development mechanism of this positive photosensitive resin composition is as follows. The unexposed portion of the diazoquinone compound is insoluble in the aqueous alkali solution and has resistance against this by interacting with the base resin. On the other hand, upon exposure, the diazoquinone compound undergoes a chemical change, becomes soluble in an alkaline aqueous solution, and dissolves the base resin. By utilizing the difference in solubility between the exposed portion and the unexposed portion to dissolve and remove the exposed portion, a coating film pattern of only the unexposed portion can be created.
In recent years, some semiconductor devices that require a protective film cannot withstand high temperatures, and when a photosensitive resin composition is actually used for these, it is particularly important that the photosensitive resin composition be cured. Temperature. If the final curing temperature is low, formation of an imide ring or an oxazole ring becomes insufficient, resulting in a problem that the mechanical properties of the final cured film are deteriorated.
Japanese Examined Patent Publication No. 1-46862

  The present invention provides a positive photosensitive resin composition excellent in mechanical properties in low-temperature curing, a semiconductor device, and a display element.

Such an object is achieved by the present invention described in the following [1] to [11].
[1] 100 parts by weight of an alkali-soluble resin (A), 1 to 50 parts by weight of a photosensitive diazoquinone compound (B), 1 to 30 parts by weight of a phenol compound (C) and 1 to 10 parts by weight of a bisazide compound (D) A positive photosensitive resin composition characterized by
[2] The phenol compound is characterized in that (C) is a phenol compound having a structure represented by the general formula (1-1) and / or a phenol compound having a structure represented by the general formula (1-2). [1] The positive photosensitive resin composition according to [1],

[3] The positive photosensitive resin composition as described in [1] or [2], wherein the bisazide compound (D) is the general formula (2),

[4] The positive photosensitive resin composition according to any one of [1] to [3], wherein the alkali-soluble resin (A) is a polyamide resin.
[5] The positive photosensitive resin composition according to [4], wherein the alkali-soluble resin (A) is a polyamide resin containing a polybenzoxazole precursor structure, a polyamic acid structure, or a polyamic acid ester structure alone or in combination of two or more. object.
[6] The positive photosensitive resin composition according to [4] or [5], wherein the alkali-soluble resin (A) is a polyamide resin including a structure represented by the general formula (3),

[7] The positive photosensitive resin composition according to [6], wherein X in the polyamide resin having a structure represented by the general formula (3) is selected from the group of the formula (4).

[8] The positive photosensitive resin composition according to [6] or [7], wherein Y in the polyamide resin including the structure represented by the general formula (3) is selected from the group of the formula (5),

[9] The polyamide resin having the structure represented by the general formula (3) is end-capped with a compound containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group. 8] The positive photosensitive resin composition according to any one of the above.
[10] The positive photosensitive resin composition according to any one of [1] to [9] is applied onto a semiconductor element so that the film thickness after heat dehydration and ring closure is 0.1 to 30 μm, and prebaked. The film thickness of the positive photosensitive resin composition according to any one of the semiconductor devices [11] [1] to [9] obtained by heating, dehydration and ring closure is obtained by exposure, development, and heating. A display element obtained by applying on a substrate for a display element so as to have a thickness of 0.1 to 30 μm, and prebaking, exposing, developing and heating.

  The positive photosensitive resin composition of the present invention has a feature that is excellent in mechanical properties in low temperature curing.

  The alkali-soluble resin used in the present invention is a resin having a hydroxyl group, a carboxyl group, or a sulfonic acid group in the main chain or side chain, and is a cresol type novolak resin, polyhydroxystyrene, or polyamide resin. Of these, polyamide resins are preferred. The polyamide resin is a resin having a polybenzoxazole precursor structure, a polyamic acid structure, or a polyamic acid ester structure and having a hydroxyl group, a carboxyl group, or a sulfonic acid group in the main chain or side chain. Among these, a polyamide resin having a structure represented by the general formula (3) is preferable from the viewpoint of heat resistance after the final heating. Further, some of these resins may be ring-closed to have a polybenzoxazole structure or a polyimide structure.

X in the polyamide resin containing the structure represented by the general formula (3) represents a divalent to tetravalent organic group, R ₁₀ is a hydroxyl group, O—R ₁₂ , m is an integer of 0 to 2, and these are It may be the same or different. Y represents a divalent to hexavalent organic group, R ₁₁ represents a hydroxyl group, a carboxyl group, O—R ₁₂ , or COO—R ₁₂ , and n represents an integer of 0 to 4, which may be the same or different. Here, R ₁₂ is an organic group having 1 to 15 carbon atoms. However, when R ₁₀ has no hydroxyl group, at least one R ₁₁ must be a carboxyl group. When there is no carboxyl group as R ₁₁ , at least one R ₁₀ must be a hydroxyl group.

  The polyamide resin containing the structure represented by the general formula (3) is, for example, a compound selected from diamine or bis (aminophenol) having a structure of X, 2,4-diaminophenol, and the structure of Z blended as necessary. And a compound selected from tetracarboxylic anhydride, trimellitic anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative, etc. having the structure of Y. Is obtained. In the case of dicarboxylic acid, an active ester type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.

In the polyamide resin containing the structure represented by the general formula _{(3), O-R 12} , COO-R 12 as a substituent of O-R _12, Y as a substituent of X is a hydroxyl group, an alkaline aqueous solution of the carboxyl group Is a group protected with an organic group having 1 to 15 carbon atoms for the purpose of adjusting the solubility in the solvent, and a hydroxyl group and a carboxyl group may be protected as necessary. Examples of R ₉ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. It is done.

  When this polyamide resin is heated at about 300 to 400 ° C., dehydration ring closure occurs, and a heat resistant resin is obtained in the form of polyimide, polybenzoxazole, or copolymerization of both.

X of the polyamide resin containing the structure represented by the general formula (3) of the present invention is, for example,
However, it is not limited to these.

Among these, as particularly preferred,
Two or more kinds may be used.

Moreover, Y of the polyamide resin containing the structure represented by the general formula (3) is, for example,

However, it is not limited to these.

Among these, particularly preferred are:

Two or more kinds may be used.

  In the present invention, it is desirable to seal the end from the viewpoint of storage stability. For sealing, a derivative having an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group can be introduced as an acid derivative or an amine derivative at the end of the polyamide represented by the general formula (3). Specifically, a diamine having a structure of X or a compound selected from bis (aminophenol) and 2,4-diaminophenol, a silicone diamine having a structure of Z and a tetracarboxylic having a structure of Y, which are blended as necessary. It is represented by the general formula (3) obtained by reacting a compound selected from acid anhydride, trimellitic acid anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. After synthesizing a polyamide resin containing a structure, the terminal amino group contained in the polyamide resin is converted into an amide using an acid anhydride containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group. It is preferable to cap. Examples of the group derived from an acid anhydride containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group after reacting with an amino group include:

However, it is not limited to these.

Among these, particularly preferred are:

Two or more kinds may be used. The method is not limited to this method, and the terminal acid contained in the polyamide resin is capped as an amide using an amine derivative containing an aliphatic group or cyclic compound group having at least one alkenyl group or alkynyl group. You can also

Furthermore, Z of the polyamide resin containing the structure represented by the general formula (3) used as necessary is, for example,
However, the present invention is not limited to these, and two or more kinds may be used.

Z of the polyamide resin having the structure represented by the general formula (3) is used when particularly excellent adhesion to a substrate such as a silicon wafer is required, for example. Up to%. If it exceeds 40 mol%, the solubility of the resin in the exposed area will be extremely lowered, developing residue (scum) will occur, and pattern processing will not be possible, which is not preferred.
The photosensitive diazoquinone compound (B) used in the present invention is a compound having a 1,2-benzoquinonediazide or 1,2-naphthoquinonediazide structure, and is known from US Pat. Nos. 2,729,975, 2,797,213 and 3,669,658. It is a substance. For example, the following are mentioned.

  Among these, an ester compound of a phenol compound and 1,2-naphthoquinone-2-diazide-5-sulfonic acid or 1,2-naphthoquinone-2-diazide-4-sulfonic acid is particularly preferable. Examples of the phenol compound include, but are not limited to, the following. Two or more of these may be used.

The addition amount of the photosensitive diazoquinone compound (B) used by this invention is 1-50 weight part with respect to 100 weight part of alkali-soluble resin. If it is less than 1 part by weight, the patterning property of the polyamide resin becomes poor, and if it exceeds 50 parts by weight, the sensitivity is greatly reduced.
In the positive photosensitive resin composition of the present invention, a phenol compound having a structure represented by the general formula (1-1) and / or a phenol compound having a structure represented by the general formula (1-2) is included. Is preferred.

As a technique for adding a phenol compound to a positive resist composition, for example, JP-A-3-200251, JP-A-3-200262, JP-A-3-200263, JP-A-3-200244, These are disclosed in, for example, Kaihei 4-1650, JP-A-4-11260, JP-A-4-12356, and JP-A-4-12357. However, when the phenolic compounds as shown in these are used in a positive photosensitive resin composition based on the polyamide resin in the present invention, the effect of improving the sensitivity is small. However, when a phenol compound having a structure represented by the general formula (1-1) and / or a phenol compound having a structure represented by the general formula (1-2) is used in the present invention, these are not used and the aromatic ring is used. Compared with the case of using a phenol compound other than these, such as a phenol compound having no substituent, the dissolution rate of the exposed portion in the developer is increased, the sensitivity is improved, and the occurrence of scum is further suppressed. In addition, the film loss at the unexposed area as seen when the sensitivity is improved by reducing the molecular weight is very small.
Examples of the phenol compound including the structure represented by the general formula (1-1) include, but are not limited to, the following compounds. Two or more kinds may be used.

  Although the following can be mentioned as a phenolic compound which has a structure shown by General formula (1-2), It is not limited to these. Two or more kinds may be used.

  In the present invention, in addition to the phenol compound having the structure represented by the general formula (1-1) or the phenol compound having the structure represented by (1-2), the following phenol compounds may be added as necessary. However, it is not limited to these.

The addition amount of the phenol compound containing the structure represented by the general formula (1-1) or the phenol compound (C) having the structure represented by (1-2) is 1 to 30 weights per 100 parts by weight of the alkali-soluble resin. Part. If it is less than 1 part by weight, the sensitivity at the time of development is lowered, and if it exceeds 30 parts by weight, the film of the unexposed part is significantly reduced during development, or precipitation occurs during freezing storage, resulting in lack of practicality.
In the positive photosensitive resin composition of this invention, it is preferable to contain the bisazide compound (D) which has a structure shown by General formula (2).

Examples of the bisazide compound represented by the general formula (2) include the following, but are not limited thereto. Two or more kinds may be used.

The addition amount of the bisazide compound (D) represented by the general formula (2) is 1 to 10 parts by weight with respect to 100 parts by weight of the alkali-soluble resin. When the amount is less than 1 part by weight, the effect on the film properties does not appear, and when the amount exceeds 10 parts by weight, precipitation occurs during frozen storage and lacks practicality.
The positive photosensitive resin composition of the present invention may contain a dihydropyridine derivative in order to enhance the photosensitive characteristics as necessary. Examples of the dihydropyridine derivative include 2,6-dimethyl-3,5-diacetyl-4- (2′-nitrophenyl) -1,4-dihydropyridine, 4- (2′-nitrophenyl) -2,6-dimethyl. -3,5-dicarboethoxy-1,4-dihydropyridine, 4- (2 ', 4'-dinitrophenyl) -2,6-dimethyl-3,5-dicarbomethoxy-1,4-dihydropyridine, etc. be able to.

The positive photosensitive resin composition in the present invention may contain additives such as a leveling agent and a silane coupling agent as necessary.
In the present invention, these components are dissolved in a solvent and used in the form of a varnish. Solvents include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropio And the like, and may be used alone or in combination.

  In the method of using the positive photosensitive resin composition of the present invention, first, the resin composition is applied to a suitable support such as a silicon wafer, a ceramic substrate, an aluminum substrate and the like. In the case of a semiconductor device, the coating amount is applied so that the final film thickness after curing is 0.1 to 30 μm. When the film thickness is less than 0.1 μm, it is difficult to sufficiently exhibit the function as a protective surface film of the semiconductor element, and when it exceeds 30 μm, it is difficult to obtain a fine processed pattern. Application methods include spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, and the like. Next, after prebaking at 60 to 130 ° C. to dry the coating film, actinic radiation is applied to the desired pattern shape. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable.

  Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. As the developer, inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, di-n Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium such as tetramethylammonium hydroxide and tetraethylammonium hydroxide An aqueous solution of an alkali such as a salt, and an aqueous solution to which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added can be preferably used. As a developing method, methods such as spraying, paddle, dipping, and ultrasonic waves are possible.

Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinse liquid. Next, heat treatment is performed to form a polyimide ring, an oxazole ring, or both a polyimide ring and an oxazole ring, thereby obtaining a final pattern rich in heat resistance.
The positive photosensitive resin composition according to the present invention is useful not only for semiconductor applications, but also as interlayer insulation for multilayer circuits, cover coats for flexible copper-clad plates, solder resist films, liquid crystal alignment films and interlayer insulation films in display elements. is there.

Hereinafter, the present invention will be described specifically by way of examples.
<Example 1>
Synthesis of polybenzoxazole precursor 258.2 g (1 mol) of diphenyl ether-4,4′-dicarboxylic acid and 1-hydroxy were added to a four-necked separable flask equipped with a thermometer, a stirrer, a raw material charging port and a nitrogen gas inlet. After 270.3 g (2 mol) of benzotriazole was dissolved in 1500 g of N-methyl-2-pyrrolidone, 412.7 g (2 mol) of dicyclohexylcarbodiimide dissolved in 500 g of N-methyl-2-pyrrolidone was adjusted to the temperature of the reaction system. Add dropwise while cooling to 0-5 ° C.
After completion of the dropping, the temperature of the reaction system was returned to room temperature and stirred as it was for 12 hours. After completion of the reaction, the precipitated dicyclohexylcarbodiurea is removed by filtration, and then 2000 g of pure water is added dropwise to the filtrate. The precipitate was collected by filtration, thoroughly washed with isopropyl alcohol, and then vacuum-dried. The active ester (A) obtained by reacting 2 mol of 1-hydroxybenzotriazole at both ends of diphenyl ether-4,4′-dicarboxylic acid was obtained. Obtained.

  Next, 54.1 g (0.11 mol) of this dicarboxylic acid derivative (A) and 44.7 g (0.12 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane were added to N -Dissolved in 265 g of methyl-2-pyrrolidone. Thereafter, the reaction system was brought to 75 ° C. and reacted for 2 hours. Next, 6.6 g (0.03 mol) of 3,3′-diamino-4,4′-dihydroxybiphenyl dissolved in 30.0 g of N-methyl-2-pyrrolidone and 50.0 g of N-methyl-2-pyrrolidone 13.5 g (0.03 mol) of the dissolved dicarboxylic acid derivative (A) was added, and the mixture was further reacted for 12 hours. Next, 6.0 g (0.06 mol) of maleic anhydride dissolved in 30.0 g of N-methyl-2-pyrrolidone was added, and the reaction was further continued for 3 hours. The reaction mixture was poured into a solution of water / isopropanol = 7/4, the precipitate was collected, washed thoroughly with pure water, and then dried under vacuum to obtain a polybenzoxazole precursor (P-1).

Production of positive photosensitive resin composition 100 g of synthesized polyamide resin (P-1), 18 g of photosensitive diazoquinone compound having the structure of the following formula (Q-1), phenol compound having the structure of the following formula (C-1) 8 g, 1 g of bisazide having the structure of the following formula (D-1) was dissolved in 150 g of N-methyl-2-pyrrolidone, and then filtered through a 0.2 μm Teflon (R) filter to obtain a positive photosensitive resin composition. It was.

Preparation of positive type photosensitive resin film This positive type photosensitive resin composition was applied onto a silicon wafer using a spin coater and then pre-baked at 120 ° C. for 4 minutes on a hot plate to form a coating film having a film thickness of about 15 μm. Obtained.
Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 110 seconds, and then rinsed with pure water for 10 seconds. Thereafter, using a clean oven manufactured by Koyo Lindberg, heating and curing were performed in an order of 150 ° C. for 30 minutes and 210 ° C. for 120 minutes in a nitrogen atmosphere, thereby obtaining a coating film having a thickness of about 10 μm.

Characteristic evaluation The wafer with a positive photosensitive resin film is immersed in a 2.0% hydrofluoric acid aqueous solution for about 30 minutes to remove the positive photosensitive resin film from the wafer and then washed with pure water for about 1 hour. Then, it was heated and dried at 60 ° C. for 8 hours using a dryer. The elongation percentage of the obtained resin film was measured using Tensilon. The elongation was 26.3%.

<Example 2>
Production of positive photosensitive resin composition 100 g of polyamide resin (P-1) synthesized in Example 1, 18 g of photosensitive diazoquinone compound having the structure of the following formula (Q-1), structure of the following formula (C-1) After dissolving 8 g of a phenolic compound having 5 g and 5 g of bisazide having the structure of the following formula (D-1) in 150 g of N-methyl-2-pyrrolidone, it is filtered through a 0.2 μm Teflon (R) filter, and is a positive photosensitive resin. A composition was obtained.

Preparation of positive type photosensitive resin film This positive type photosensitive resin composition was applied onto a silicon wafer using a spin coater and then pre-baked at 120 ° C. for 4 minutes on a hot plate to form a coating film having a film thickness of about 15 μm. Obtained.
Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 110 seconds, and then rinsed with pure water for 10 seconds. Thereafter, using a clean oven manufactured by Koyo Lindberg, heating and curing were performed in an order of 150 ° C. for 30 minutes and 210 ° C. for 120 minutes in a nitrogen atmosphere, thereby obtaining a coating film having a thickness of about 10 μm.

Characteristic evaluation The wafer with a positive photosensitive resin film is immersed in a 2.0% hydrofluoric acid aqueous solution for about 30 minutes to remove the positive photosensitive resin film from the wafer and then washed with pure water for about 1 hour. Then, it was heated and dried at 60 ° C. for 8 hours using a dryer. The elongation percentage of the obtained resin film was measured using Tensilon. The elongation was 23.5%.

<Example 3>
Production of positive photosensitive resin composition 100 g of polyamide resin (P-1) synthesized in Example 1, 18 g of photosensitive diazoquinone compound having the structure of the following formula (Q-2), structure of the following formula (C-2) After dissolving 8 g of a phenol compound having 2 g and 2 g of bisazide having the structure of the following formula (D-2) in 150 g of N-methyl-2-pyrrolidone, the mixture is filtered through a 0.2 μm Teflon (R) filter, and is a positive photosensitive resin. A composition was obtained.

Preparation of positive type photosensitive resin film This positive type photosensitive resin composition was applied onto a silicon wafer using a spin coater and then pre-baked at 120 ° C. for 4 minutes on a hot plate to form a coating film having a film thickness of about 15 μm. Obtained.
Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 110 seconds, and then rinsed with pure water for 10 seconds. Thereafter, using a clean oven manufactured by Koyo Lindberg, heating and curing were performed in an order of 150 ° C. for 30 minutes and 210 ° C. for 120 minutes in a nitrogen atmosphere, thereby obtaining a coating film having a thickness of about 10 μm.

Characteristic evaluation The wafer with a positive photosensitive resin film is immersed in a 2.0% hydrofluoric acid aqueous solution for about 30 minutes to remove the positive photosensitive resin film from the wafer and then washed with pure water for about 1 hour. Then, it was heated and dried at 60 ° C. for 8 hours using a dryer. The elongation percentage of the obtained resin film was measured using Tensilon. The elongation was 20.2%.

<Comparative Example 1>
Production of positive photosensitive resin composition 100 g of synthesized polyamide resin (P-1), 18 g of photosensitive diazoquinone compound having the structure of the following formula (Q-1), phenol compound having the structure of the following formula (C-1) 8 g was dissolved in 150 g of N-methyl-2-pyrrolidone, and then filtered through a 0.2 μm Teflon (R) filter to obtain a positive photosensitive resin composition.

Preparation of positive type photosensitive resin film This positive type photosensitive resin composition was applied onto a silicon wafer using a spin coater and then pre-baked at 120 ° C. for 4 minutes on a hot plate to form a coating film having a film thickness of about 15 μm. Obtained.
Next, the exposed portion was dissolved and removed by immersing in a 2.38% tetramethylammonium hydroxide aqueous solution for 110 seconds, and then rinsed with pure water for 10 seconds. Thereafter, using a clean oven manufactured by Koyo Lindberg, heating and curing were performed in an order of 150 ° C. for 30 minutes and 210 ° C. for 120 minutes in a nitrogen atmosphere, thereby obtaining a coating film having a thickness of about 10 μm.

Characteristic evaluation The wafer with a positive photosensitive resin film is immersed in a 2.0% hydrofluoric acid aqueous solution for about 30 minutes to remove the positive photosensitive resin film from the wafer and then washed with pure water for about 1 hour. Then, it was heated and dried at 60 ° C. for 8 hours using a dryer. The elongation percentage of the obtained resin film was measured using Tensilon. The elongation was 12.1%.
The structures of Q-1, Q-2, C-1, C-2, D-1, and D-2 of Examples and Comparative Examples are shown below.

Claims (10)

Alkali-soluble resin (A) 100 parts by weight of a photosensitive diazoquinone compound (B) 1 to 10 parts by weight, phenolic compounds (C) 1 to 30 parts by weight and azido compounds (D) containing Mupo di type 1-10 parts by weight a photosensitive resin composition,
The positive photosensitive resin composition, wherein the alkali-soluble resin (A) is a polyamide resin . 2. The positive photosensitive compound according to claim 1, wherein the phenol compound ( C) is a phenol compound having a structure represented by the general formula (1-1) and / or a phenol compound having a structure represented by the general formula (1-2). Resin composition.
The positive photosensitive resin composition according to claim 1 or 2, wherein the bisazide compound ( D) has a structure represented by the general formula (2).
The positive electrode according to any one of claims 1 to 3, wherein the alkali-soluble resin (A) is a polyamide resin comprising a polybenzoxazole precursor structure, a polyamic acid structure, or a polyamic acid ester structure, either singly or in combination. Type photosensitive resin composition. The positive photosensitive resin composition according to any one of claims 1 to 4, wherein the alkali-soluble resin (A) is a polyamide resin having a structure represented by the general formula (3).
The positive photosensitive resin composition according to claim 5 , wherein X in the polyamide resin having a structure represented by the general formula (3) is selected from the group of the formula (4).
The positive photosensitive resin composition according to claim 5 or 6 , wherein Y in the polyamide resin having a structure represented by the general formula (3) is selected from the group of the formula (5).
The polyamide resin containing the structure represented by the general formula (3) is end-capped with a compound containing an aliphatic group or a cyclic compound group having at least one alkenyl group or alkynyl group . 2. The positive photosensitive resin composition according to item 1. A step of applying the positive photosensitive resin composition according to any one of claims 4 to 8 on a semiconductor element so that a film thickness after heat dehydration and ring closure is 0.1 to 30 μm, and a step of prebaking. A method for manufacturing a semiconductor device, comprising: an exposing step, a developing step, and a heating step.

A step of applying the positive photosensitive resin composition according to any one of claims 4 to 8 on a display element substrate so that a film thickness after heat dehydration and ring closure is 0.1 to 30 μm; A display element manufacturing method comprising: a step of performing an exposure step, a step of exposing, a step of developing, and a step of heating.