JP4611985B2 - 電子回路及びパワー半導体モジュール - Google Patents
電子回路及びパワー半導体モジュール Download PDFInfo
- Publication number
- JP4611985B2 JP4611985B2 JP2006529536A JP2006529536A JP4611985B2 JP 4611985 B2 JP4611985 B2 JP 4611985B2 JP 2006529536 A JP2006529536 A JP 2006529536A JP 2006529536 A JP2006529536 A JP 2006529536A JP 4611985 B2 JP4611985 B2 JP 4611985B2
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- inductance
- common mode
- semiconductor switches
- mode rejection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 238000004804 winding Methods 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
Landscapes
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03405343A EP1480339A1 (de) | 2003-05-19 | 2003-05-19 | Halbleiterschalteranordnung |
| PCT/CH2004/000301 WO2004102806A1 (de) | 2003-05-19 | 2004-05-18 | Halbleiterschalteranordnung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006529066A JP2006529066A (ja) | 2006-12-28 |
| JP2006529066A5 JP2006529066A5 (https=) | 2007-07-12 |
| JP4611985B2 true JP4611985B2 (ja) | 2011-01-12 |
Family
ID=33041137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006529536A Expired - Lifetime JP4611985B2 (ja) | 2003-05-19 | 2004-05-18 | 電子回路及びパワー半導体モジュール |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7671639B2 (https=) |
| EP (2) | EP1480339A1 (https=) |
| JP (1) | JP4611985B2 (https=) |
| CN (1) | CN100394691C (https=) |
| DE (1) | DE502004002311D1 (https=) |
| WO (1) | WO2004102806A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010063274B3 (de) * | 2010-12-16 | 2012-01-26 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung zur Ansteuerung eines Leistungshalbleiterschalters über eine Gleichtaktdrossel |
| DE102010063220B4 (de) | 2010-12-16 | 2018-09-20 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterschaltungsanordnung |
| US9793889B2 (en) | 2011-03-15 | 2017-10-17 | Infineon Technologies Ag | Semiconductor device including a circuit to compensate for parasitic inductance |
| WO2013032906A1 (en) * | 2011-08-29 | 2013-03-07 | Efficient Power Conversion Corporation | Parallel connection methods for high performance transistors |
| US9065689B2 (en) | 2011-12-22 | 2015-06-23 | Continental Automotive Systems, Inc. | Apparatus and method for receiving signals in a vehicle |
| JP5559265B2 (ja) * | 2012-07-30 | 2014-07-23 | ファナック株式会社 | スイッチング素子が並列接続されて並列駆動される電力変換装置 |
| DE102013106801B4 (de) | 2013-06-28 | 2016-06-16 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterschaltung |
| DE102013107239B3 (de) * | 2013-07-09 | 2014-03-20 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleiterschaltung |
| EP3652857B1 (en) | 2017-07-13 | 2021-06-30 | ABB Schweiz AG | Power semiconductor module gate driver with input common mode choke |
| DE102017125548A1 (de) | 2017-11-01 | 2019-05-02 | Sma Solar Technology Ag | Schaltungsanordnung und leistungselektronische wandlerschaltung |
| CN110601510A (zh) * | 2019-07-29 | 2019-12-20 | 宁波安信数控技术有限公司 | 一种igbt并联驱动适配电路及线路板 |
| EP4037187A1 (en) * | 2021-01-29 | 2022-08-03 | ABB Schweiz AG | Semiconductor unit with asymmetrically arranged common mode chokes on gate driver input side |
| EP4037188A1 (en) * | 2021-01-29 | 2022-08-03 | ABB Schweiz AG | Semiconductor unit with asymmetrically arranged common mode chokes on gate driver output side |
| CN115037177A (zh) * | 2022-06-10 | 2022-09-09 | 势加透博洁净动力如皋有限公司 | 一种混合器件驱动电机的拓扑电路系统 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4823023A (en) * | 1982-06-01 | 1989-04-18 | Nippon Chemi-Con Corporation | Transistor with differentiated control switching circuit |
| US4567379A (en) * | 1984-05-23 | 1986-01-28 | Burroughs Corporation | Parallel current sharing system |
| JPS62230358A (ja) | 1986-03-28 | 1987-10-09 | Toshiba Corp | Pwmコンバ−タの並列運転回路 |
| US4758941A (en) * | 1987-10-30 | 1988-07-19 | International Business Machines Corporation | MOSFET fullbridge switching regulator having transformer coupled MOSFET drive circuit |
| US4983865A (en) * | 1989-01-25 | 1991-01-08 | Pacific Monolithics | High speed switch matrix |
| JP2855816B2 (ja) * | 1990-07-25 | 1999-02-10 | 三菱電機株式会社 | 半導体制御装置 |
| US5134321A (en) * | 1991-01-23 | 1992-07-28 | Harris Corporation | Power MOSFET AC power switch employing means for preventing conduction of body diode |
| JP2557130Y2 (ja) * | 1991-04-19 | 1997-12-08 | 神鋼電機株式会社 | ベース配線構造 |
| US5276357A (en) * | 1992-09-01 | 1994-01-04 | Broadcast Electronics, Inc. | High efficiency quasi-square wave drive circuit for switching power amplifiers |
| JP2793946B2 (ja) * | 1993-08-26 | 1998-09-03 | 三菱電機株式会社 | 電力用スイッチング装置 |
| JPH0819246A (ja) * | 1994-07-04 | 1996-01-19 | Fuji Electric Co Ltd | 半導体スイッチ素子の並列接続回路 |
| DE10152879B4 (de) * | 2001-10-26 | 2005-11-24 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Halbleiterschalteranordnung |
-
2003
- 2003-05-19 EP EP03405343A patent/EP1480339A1/de not_active Withdrawn
-
2004
- 2004-05-18 WO PCT/CH2004/000301 patent/WO2004102806A1/de not_active Ceased
- 2004-05-18 CN CNB2004800136580A patent/CN100394691C/zh not_active Expired - Lifetime
- 2004-05-18 US US10/557,408 patent/US7671639B2/en active Active
- 2004-05-18 DE DE502004002311T patent/DE502004002311D1/de not_active Expired - Lifetime
- 2004-05-18 JP JP2006529536A patent/JP4611985B2/ja not_active Expired - Lifetime
- 2004-05-18 EP EP04733520A patent/EP1625660B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN100394691C (zh) | 2008-06-11 |
| US7671639B2 (en) | 2010-03-02 |
| CN1792035A (zh) | 2006-06-21 |
| EP1625660B1 (de) | 2006-12-13 |
| JP2006529066A (ja) | 2006-12-28 |
| DE502004002311D1 (de) | 2007-01-25 |
| US20060226708A1 (en) | 2006-10-12 |
| WO2004102806A1 (de) | 2004-11-25 |
| EP1625660A1 (de) | 2006-02-15 |
| EP1480339A1 (de) | 2004-11-24 |
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