JP4610283B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4610283B2 JP4610283B2 JP2004288212A JP2004288212A JP4610283B2 JP 4610283 B2 JP4610283 B2 JP 4610283B2 JP 2004288212 A JP2004288212 A JP 2004288212A JP 2004288212 A JP2004288212 A JP 2004288212A JP 4610283 B2 JP4610283 B2 JP 4610283B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- conductive pattern
- semiconductor device
- semiconductor
- die pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
11A 導電パターン
11B ダイパッド
11C 配線部
11D 導電パターン
12A 第1の半導体素子
12B 第2の半導体素子
13 封止樹脂
14 金属細線
15 外部電極
15A 第1の外部電極
15B 第2の外部電極
16 レジスト
17A 第1の分離溝
17B 第2の分離溝
20 実装基板
21 導電路
Claims (3)
- 導電パターンと、前記導電パターンと電気的に接続された半導体素子と、前記導電パターンの裏面を露出させ、前記導電パターンおよび前記半導体素子を被覆する封止樹脂から成るパッケージとを有する半導体装置であり、
前記パッケージは、平面的に見て4つの角部を有する裏面および前記裏面と対向し平面的に見て4つの角部を有する表面と、前記裏面と前記表面をつなぐ4側面から成り、
前記導電パターンであり、平面的に見て、4つの角部にそれぞれ設けられた第1のダイパッドと、
前記第1のダイパッドにそれぞれ設けられ、平面的に見て前記パッケージの側面と近接して設けられた4つの第1の半導体素子と、
前記第1の半導体素子を制御し、平面的に見て前記第1の半導体素子で挟まれ、前記パッケージの中央部付近に配置された第2の半導体素子と、
前記導電パターンであり、前記第2の半導体素子が設けられる第2のダイパッドおよび前記第2の半導体素子と電気的に接続された配線とを有する、前記第1のダイパッド以外の、他の導電パターンとを有し、
前記第1の半導体素子は、前記第2の半導体素子よりも大電流を流し、前記第1のダイパッドと前記ダイパッドと隣接する前記他の導電パターンの間隔は、前記他の導電パターン同士の間隔よりも広いことを特徴とする半導体装置。 - 前記第1の半導体素子は、バイポーラタイプのトランジスタ、パワーMOS、IGBT、ダイオードまたはサイリスタである請求項1に記載の半導体装置。
- 前記導電パターンは、2層以上の前記導電パターンが形成された基板が採用される請求項1に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004288212A JP4610283B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004288212A JP4610283B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006100751A JP2006100751A (ja) | 2006-04-13 |
JP4610283B2 true JP4610283B2 (ja) | 2011-01-12 |
Family
ID=36240230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004288212A Expired - Fee Related JP4610283B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4610283B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5921491B2 (ja) | 2013-06-13 | 2016-05-24 | 三菱電機株式会社 | 電力用半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07283356A (ja) * | 1994-11-18 | 1995-10-27 | Sanken Electric Co Ltd | 樹脂封止型回路装置の製造方法 |
JP2001332687A (ja) * | 2000-05-23 | 2001-11-30 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2004265931A (ja) * | 2003-02-14 | 2004-09-24 | Hitachi Ltd | 半導体素子駆動用集積回路及び電力変換装置 |
-
2004
- 2004-09-30 JP JP2004288212A patent/JP4610283B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07283356A (ja) * | 1994-11-18 | 1995-10-27 | Sanken Electric Co Ltd | 樹脂封止型回路装置の製造方法 |
JP2001332687A (ja) * | 2000-05-23 | 2001-11-30 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP2004265931A (ja) * | 2003-02-14 | 2004-09-24 | Hitachi Ltd | 半導体素子駆動用集積回路及び電力変換装置 |
Also Published As
Publication number | Publication date |
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JP2006100751A (ja) | 2006-04-13 |
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