JP4607328B2 - 基板の低エネルギー電子促進エッチング及びクリーニング方法及び装置 - Google Patents

基板の低エネルギー電子促進エッチング及びクリーニング方法及び装置 Download PDF

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Publication number
JP4607328B2
JP4607328B2 JP2000585478A JP2000585478A JP4607328B2 JP 4607328 B2 JP4607328 B2 JP 4607328B2 JP 2000585478 A JP2000585478 A JP 2000585478A JP 2000585478 A JP2000585478 A JP 2000585478A JP 4607328 B2 JP4607328 B2 JP 4607328B2
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Japan
Prior art keywords
plasma
substrate
mechanical support
sample
etching
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Expired - Fee Related
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JP2000585478A
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English (en)
Japanese (ja)
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JP2003504834A5 (https=
JP2003504834A (ja
Inventor
ケヴィン ピー． マーティン、
ハリー ピー． ギリス、
ドミトリ エイ． ショートフ、
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Georgia Tech Research Corp
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Georgia Tech Research Corp
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Application filed by Georgia Tech Research Corp filed Critical Georgia Tech Research Corp
Priority claimed from PCT/US1998/025606 external-priority patent/WO2000032851A1/en
Publication of JP2003504834A publication Critical patent/JP2003504834A/ja
Publication of JP2003504834A5 publication Critical patent/JP2003504834A5/ja
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Publication of JP4607328B2 publication Critical patent/JP4607328B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2000585478A 1998-12-03 1998-12-03 基板の低エネルギー電子促進エッチング及びクリーニング方法及び装置 Expired - Fee Related JP4607328B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/025606 WO2000032851A1 (en) 1997-12-03 1998-12-03 Method and apparatus for low energy electron enhanced etching and cleaning of substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008266414A Division JP5227734B2 (ja) 2008-10-15 2008-10-15 基板の低エネルギー電子促進エッチング及びクリーニング方法及び装置

Publications (3)

Publication Number Publication Date
JP2003504834A JP2003504834A (ja) 2003-02-04
JP2003504834A5 JP2003504834A5 (https=) 2007-06-07
JP4607328B2 true JP4607328B2 (ja) 2011-01-05

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ID=22268413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000585478A Expired - Fee Related JP4607328B2 (ja) 1998-12-03 1998-12-03 基板の低エネルギー電子促進エッチング及びクリーニング方法及び装置

Country Status (4)

Country Link
EP (1) EP1144735B1 (https=)
JP (1) JP4607328B2 (https=)
CA (1) CA2353479C (https=)
MX (1) MXPA01005602A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250046356A (ko) * 2023-01-04 2025-04-02 벨벳치 엘엘씨 전자 파면에 의한 원자층 에칭

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11664195B1 (en) * 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0487333A (ja) * 1990-07-31 1992-03-19 Toshiba Corp レーザアシスト処理装置
KR0143873B1 (ko) * 1993-02-19 1998-08-17 순페이 야마자끼 절연막 및 반도체장치 및 반도체 장치 제조방법
JPH06244142A (ja) * 1993-02-19 1994-09-02 Sumitomo Electric Ind Ltd ウェハのエッチング方法
JPH07211492A (ja) * 1994-01-18 1995-08-11 Semiconductor Energy Lab Co Ltd プラズマ処理方法及びプラズマ処理装置
WO1997008362A1 (en) * 1995-08-28 1997-03-06 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
WO1997033300A1 (en) * 1996-03-06 1997-09-12 Mattson Technology, Inc. Icp reactor having a conically-shaped plasma-generating section
US6258287B1 (en) * 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250046356A (ko) * 2023-01-04 2025-04-02 벨벳치 엘엘씨 전자 파면에 의한 원자층 에칭

Also Published As

Publication number Publication date
EP1144735A1 (en) 2001-10-17
EP1144735A4 (en) 2007-01-10
CA2353479A1 (en) 2000-06-08
MXPA01005602A (es) 2002-04-24
EP1144735B1 (en) 2014-02-12
CA2353479C (en) 2008-02-12
JP2003504834A (ja) 2003-02-04

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