CA2353479C - Method and apparatus for low energy electron enhanced etching and cleaning of substrates - Google Patents

Method and apparatus for low energy electron enhanced etching and cleaning of substrates Download PDF

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Publication number
CA2353479C
CA2353479C CA002353479A CA2353479A CA2353479C CA 2353479 C CA2353479 C CA 2353479C CA 002353479 A CA002353479 A CA 002353479A CA 2353479 A CA2353479 A CA 2353479A CA 2353479 C CA2353479 C CA 2353479C
Authority
CA
Canada
Prior art keywords
plasma
substrate
additional structure
mechanical support
electrically biased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002353479A
Other languages
English (en)
French (fr)
Other versions
CA2353479A1 (en
Inventor
Kevin P. Martin
Harry P. Gillis
Dimitri A. Choutov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Georgia Tech Research Corp
Original Assignee
Georgia Tech Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgia Tech Research Corp filed Critical Georgia Tech Research Corp
Priority to CA002601295A priority Critical patent/CA2601295C/en
Priority claimed from PCT/US1998/025606 external-priority patent/WO2000032851A1/en
Publication of CA2353479A1 publication Critical patent/CA2353479A1/en
Application granted granted Critical
Publication of CA2353479C publication Critical patent/CA2353479C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CA002353479A 1998-12-03 1998-12-03 Method and apparatus for low energy electron enhanced etching and cleaning of substrates Expired - Fee Related CA2353479C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002601295A CA2601295C (en) 1998-12-03 1998-12-03 Method and apparatus for low energy electron enhanced etching and cleaning of substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/025606 WO2000032851A1 (en) 1997-12-03 1998-12-03 Method and apparatus for low energy electron enhanced etching and cleaning of substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CA002601295A Division CA2601295C (en) 1998-12-03 1998-12-03 Method and apparatus for low energy electron enhanced etching and cleaning of substrates

Publications (2)

Publication Number Publication Date
CA2353479A1 CA2353479A1 (en) 2000-06-08
CA2353479C true CA2353479C (en) 2008-02-12

Family

ID=22268413

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002353479A Expired - Fee Related CA2353479C (en) 1998-12-03 1998-12-03 Method and apparatus for low energy electron enhanced etching and cleaning of substrates

Country Status (4)

Country Link
EP (1) EP1144735B1 (https=)
JP (1) JP4607328B2 (https=)
CA (1) CA2353479C (https=)
MX (1) MXPA01005602A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11664195B1 (en) * 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11869747B1 (en) * 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0487333A (ja) * 1990-07-31 1992-03-19 Toshiba Corp レーザアシスト処理装置
KR0143873B1 (ko) * 1993-02-19 1998-08-17 순페이 야마자끼 절연막 및 반도체장치 및 반도체 장치 제조방법
JPH06244142A (ja) * 1993-02-19 1994-09-02 Sumitomo Electric Ind Ltd ウェハのエッチング方法
JPH07211492A (ja) * 1994-01-18 1995-08-11 Semiconductor Energy Lab Co Ltd プラズマ処理方法及びプラズマ処理装置
WO1997008362A1 (en) * 1995-08-28 1997-03-06 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
WO1997033300A1 (en) * 1996-03-06 1997-09-12 Mattson Technology, Inc. Icp reactor having a conically-shaped plasma-generating section
US6258287B1 (en) * 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment

Also Published As

Publication number Publication date
EP1144735A1 (en) 2001-10-17
EP1144735A4 (en) 2007-01-10
CA2353479A1 (en) 2000-06-08
MXPA01005602A (es) 2002-04-24
JP4607328B2 (ja) 2011-01-05
EP1144735B1 (en) 2014-02-12
JP2003504834A (ja) 2003-02-04

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Effective date: 20171204