MXPA01005602A - Metodo y aparato para la limpieza y ataque quimico de substratos, mejorado por electrones de baja energia. - Google Patents
Metodo y aparato para la limpieza y ataque quimico de substratos, mejorado por electrones de baja energia.Info
- Publication number
- MXPA01005602A MXPA01005602A MXPA01005602A MXPA01005602A MXPA01005602A MX PA01005602 A MXPA01005602 A MX PA01005602A MX PA01005602 A MXPA01005602 A MX PA01005602A MX PA01005602 A MXPA01005602 A MX PA01005602A MX PA01005602 A MXPA01005602 A MX PA01005602A
- Authority
- MX
- Mexico
- Prior art keywords
- plasma
- substrate
- additional structure
- mechanical support
- process according
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000004140 cleaning Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 title claims abstract description 13
- 230000007935 neutral effect Effects 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000000605 extraction Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 72
- 230000008569 process Effects 0.000 claims description 43
- 238000009795 derivation Methods 0.000 claims description 29
- 238000003486 chemical etching Methods 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000356 contaminant Substances 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- -1 hydrogen halides Chemical class 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052756 noble gas Inorganic materials 0.000 claims description 3
- 150000002835 noble gases Chemical class 0.000 claims description 3
- 239000012855 volatile organic compound Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 155
- 150000002500 ions Chemical class 0.000 description 40
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000007667 floating Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000000284 resting effect Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910003452 thorium oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32596—Hollow cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1998/025606 WO2000032851A1 (en) | 1997-12-03 | 1998-12-03 | Method and apparatus for low energy electron enhanced etching and cleaning of substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MXPA01005602A true MXPA01005602A (es) | 2002-04-24 |
Family
ID=22268413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MXPA01005602A MXPA01005602A (es) | 1998-12-03 | 1998-12-03 | Metodo y aparato para la limpieza y ataque quimico de substratos, mejorado por electrones de baja energia. |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1144735B1 (https=) |
| JP (1) | JP4607328B2 (https=) |
| CA (1) | CA2353479C (https=) |
| MX (1) | MXPA01005602A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11664195B1 (en) * | 2021-11-11 | 2023-05-30 | Velvetch Llc | DC plasma control for electron enhanced material processing |
| US11688588B1 (en) * | 2022-02-09 | 2023-06-27 | Velvetch Llc | Electron bias control signals for electron enhanced material processing |
| US11869747B1 (en) * | 2023-01-04 | 2024-01-09 | Velvetch Llc | Atomic layer etching by electron wavefront |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487333A (ja) * | 1990-07-31 | 1992-03-19 | Toshiba Corp | レーザアシスト処理装置 |
| KR0143873B1 (ko) * | 1993-02-19 | 1998-08-17 | 순페이 야마자끼 | 절연막 및 반도체장치 및 반도체 장치 제조방법 |
| JPH06244142A (ja) * | 1993-02-19 | 1994-09-02 | Sumitomo Electric Ind Ltd | ウェハのエッチング方法 |
| JPH07211492A (ja) * | 1994-01-18 | 1995-08-11 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
| WO1997008362A1 (en) * | 1995-08-28 | 1997-03-06 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates |
| WO1997033300A1 (en) * | 1996-03-06 | 1997-09-12 | Mattson Technology, Inc. | Icp reactor having a conically-shaped plasma-generating section |
| US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
-
1998
- 1998-12-03 CA CA002353479A patent/CA2353479C/en not_active Expired - Fee Related
- 1998-12-03 EP EP98961877.2A patent/EP1144735B1/en not_active Expired - Lifetime
- 1998-12-03 MX MXPA01005602A patent/MXPA01005602A/es unknown
- 1998-12-03 JP JP2000585478A patent/JP4607328B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1144735A1 (en) | 2001-10-17 |
| EP1144735A4 (en) | 2007-01-10 |
| CA2353479A1 (en) | 2000-06-08 |
| JP4607328B2 (ja) | 2011-01-05 |
| EP1144735B1 (en) | 2014-02-12 |
| CA2353479C (en) | 2008-02-12 |
| JP2003504834A (ja) | 2003-02-04 |
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