JP4603566B2 - プラズマ蒸着装置およびその蒸着法 - Google Patents
プラズマ蒸着装置およびその蒸着法 Download PDFInfo
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- JP4603566B2 JP4603566B2 JP2007113005A JP2007113005A JP4603566B2 JP 4603566 B2 JP4603566 B2 JP 4603566B2 JP 2007113005 A JP2007113005 A JP 2007113005A JP 2007113005 A JP2007113005 A JP 2007113005A JP 4603566 B2 JP4603566 B2 JP 4603566B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
20 プラズマビーム
21 基板
22 薄膜
29 抽出経路
30 粒子または副生成物
33a、33b 回転軸
34 シェル(shell)
35 噴射経路
36 検出器
100 プラズマ蒸着装置
110 チャンバ
120 プラズマ発生器
122 プラズマジェット
130 ガス抽出器
132 ガス抽出パイプ
θ1 放射方向角度
θ2 抽出方向角度
Claims (24)
- チャンバ、
前記チャンバ内に設置される台座、
前記チャンバ内の前記台座の上に設置され、
前記台座の法線方向と前記プラズマジェットの放射方向間の0<θ 1 <90°を満たす放射方向角度θ1を有するプラズマ薄膜蒸着のためのプラズマジェットを含むプラズマ発生器、
前記チャンバ内の前記台座の上に設置され、前記台座の法線方向と前記ガス抽出パイプの抽出方向間の0<θ 2 <90°を満たす抽出方向角度θ2を有する粒子と副生成物を抽出する抽出経路を設けるガス抽出パイプを含むガス抽出器を含むプラズマ蒸着装置。 - 前記ガス抽出器は、回転軸となる前記プラズマ発生器の回りを回転する請求項1に記載のプラズマ蒸着装置。
- 前記プラズマ発生器は、前記ガス抽出器に接続される請求項1に記載のプラズマ蒸着装置。
- 前記プラズマ発生器と前記ガス抽出器は、電源によって作動され、一緒に回転する請求項3に記載のプラズマ蒸着装置。
- θ1は、θ2に等しい請求項1に記載のプラズマ蒸着装置。
- θ1とθ2間の差は、20°より小さい請求項1に記載のプラズマ蒸着装置。
- θ1とθ2は、調節可能である請求項1に記載のプラズマ蒸着装置。
- 前記ガス抽出パイプは、広口の形状の端を有する請求項1に記載のプラズマ蒸着装置。
- 前記ガス抽出器と前記プラズマ発生器の間の前記台座上に配置される検出器をさらに含む請求項1に記載のプラズマ蒸着装置。
- 前記検出器は、生成物分析装置である請求項9に記載のプラズマ蒸着装置。
- 前記検出器は、粒子追跡装置である請求項9に記載のプラズマ蒸着装置。
- 前記ガス抽出器と前記プラズマ発生器は、前記台座に平行した移動方向を有する請求項1に記載のプラズマ蒸着装置。
- 前記台座上に配置される薄膜蒸着に用いられる基板をさらに含む請求項1に記載のプラズマ蒸着装置。
- 前記チャンバの気圧は、環境大気と同じである請求項1に記載のプラズマ蒸着装置。
- 基板を設けるステップ、
前記基板の法線方向と前記プラズマジェットの放射方向間の0<θ 1 <90°を満たす放射方向角度θ1を有するプラズマジェットを含むプラズマ発生器を用いて前記基板の上に薄膜を形成する薄膜蒸着のためのプラズマビームを発生するステップ、
前記基板の法線方向と前記ガス抽出パイプの抽出方向間の0<θ 2 <90°を満たす抽出方向角度θ2を有するガス抽出パイプを含むガス抽出器で粒子、または副生成物を抽出するステップを含むプラズマ薄膜蒸着方法。 - θ1は、θ2に等しい請求項15に記載のプラズマ薄膜蒸着方法。
- θ1とθ2間の差は、20°より小さい請求項15に記載のプラズマ薄膜蒸着方法。
- 前記ガス抽出器と前記プラズマ発生器の間の前記基板上に配置される検出器をさらに含む請求項15に記載のプラズマ薄膜蒸着方法。
- 前記検出器は、生成物分析装置である請求項15に記載のプラズマ薄膜蒸着方法。
- 前記検出器は、粒子追跡装置である請求項15に記載のプラズマ薄膜蒸着方法。
- 前記チャンバの気圧は、環境大気と同じである請求項15に記載のプラズマ薄膜蒸着方法。
- 前記薄膜は、プラズマ化学気相成長(plasma-enhanced CVD;PECVD)によって形成される請求項15に記載のプラズマ薄膜蒸着方法。
- 前記薄膜は、二酸化ケイ素(SiO2)膜、または窒化ケイ素(SiNX)膜である請求項15に記載のプラズマ薄膜蒸着方法。
- 前記薄膜は、無機薄膜である請求項15に記載のプラズマ薄膜蒸着方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW095128840A TWI341872B (en) | 2006-08-07 | 2006-08-07 | Plasma deposition apparatus and depositing method thereof |
Publications (2)
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JP2008038246A JP2008038246A (ja) | 2008-02-21 |
JP4603566B2 true JP4603566B2 (ja) | 2010-12-22 |
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JP2007113005A Active JP4603566B2 (ja) | 2006-08-07 | 2007-04-23 | プラズマ蒸着装置およびその蒸着法 |
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US (2) | US7923076B2 (ja) |
JP (1) | JP4603566B2 (ja) |
TW (1) | TWI341872B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007025152B4 (de) * | 2007-05-29 | 2012-02-09 | Innovent E.V. | Verfahren zum Beschichten eines Substrats |
TWI407842B (zh) * | 2008-12-31 | 2013-09-01 | Ind Tech Res Inst | 大氣電漿大幅寬處理裝置 |
TWI384085B (zh) * | 2009-05-07 | 2013-02-01 | Univ Kao Yuan | 往復式雙段噴射常壓電漿鍍膜系統 |
KR101581046B1 (ko) * | 2009-12-16 | 2015-12-30 | 주식회사 케이씨씨 | 플라즈마 아크토치의 위치조절장치 |
KR101819781B1 (ko) | 2010-10-16 | 2018-02-28 | 울트라테크 인크. | 원자 층 증착 코팅 시스템 |
TW201224198A (en) * | 2010-12-15 | 2012-06-16 | Yu-Nan Lin | Plasma coating device |
JP5849218B2 (ja) * | 2011-06-14 | 2016-01-27 | パナソニックIpマネジメント株式会社 | 成膜装置 |
US9941100B2 (en) * | 2011-12-16 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle |
US10862073B2 (en) * | 2012-09-25 | 2020-12-08 | The Trustees Of Princeton University | Barrier film for electronic devices and substrates |
US20150042017A1 (en) * | 2013-08-06 | 2015-02-12 | Applied Materials, Inc. | Three-dimensional (3d) processing and printing with plasma sources |
JP6297509B2 (ja) * | 2015-01-26 | 2018-03-20 | 東京エレクトロン株式会社 | 基板処理装置 |
CN107881485B (zh) * | 2017-11-01 | 2019-10-01 | 深圳市华星光电半导体显示技术有限公司 | 等离子体增强化学气相沉积设备及oled面板的封装方法 |
US11486038B2 (en) | 2019-01-30 | 2022-11-01 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
DE102019109034A1 (de) | 2019-04-05 | 2020-10-08 | Marco Systemanalyse Und Entwicklung Gmbh | Rotationsdosierkopf |
JP7376693B2 (ja) * | 2019-09-09 | 2023-11-08 | アプライド マテリアルズ インコーポレイテッド | 処理システムおよび反応体ガスを供給する方法 |
JP7420003B2 (ja) * | 2020-07-31 | 2024-01-23 | 株式会社デンソー | プラズマ処理装置用のプラズマ放出ノズル及びプラズマ処理装置 |
US11803118B2 (en) | 2021-04-12 | 2023-10-31 | Applied Materials, Inc. | Methods and apparatus for photomask processing |
CN113246577A (zh) * | 2021-05-06 | 2021-08-13 | 常熟明阳玻璃制品有限公司 | 一种高强度自清洁卫浴玻璃的生产工艺 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0762546A (ja) * | 1993-08-25 | 1995-03-07 | Shinko Electric Co Ltd | 大気圧プラズマ表面処理装置 |
JPH11335868A (ja) * | 1998-05-20 | 1999-12-07 | Seiko Epson Corp | 表面処理方法及び装置 |
JP2002151436A (ja) * | 2000-11-15 | 2002-05-24 | Sekisui Chem Co Ltd | 半導体素子の製造方法及びその装置 |
JP2003218099A (ja) * | 2002-01-21 | 2003-07-31 | Sekisui Chem Co Ltd | 放電プラズマ処理方法及びその装置 |
JP2004115896A (ja) * | 2002-09-27 | 2004-04-15 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及び放電プラズマ処理方法 |
JP2005070647A (ja) * | 2003-08-27 | 2005-03-17 | Konica Minolta Holdings Inc | 光学物品及びその製造装置 |
JP2005144318A (ja) * | 2003-11-14 | 2005-06-09 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
JP2005347278A (ja) * | 2000-07-28 | 2005-12-15 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6050169A (ja) * | 1983-08-26 | 1985-03-19 | Res Dev Corp Of Japan | 薄膜形成方法 |
JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ic素子における配線接続方法 |
JPH01244623A (ja) * | 1988-03-25 | 1989-09-29 | Matsushita Electric Ind Co Ltd | 酸化膜の製造方法 |
JPH0389684A (ja) | 1989-08-31 | 1991-04-15 | Kenwood Corp | Avアンプ |
US5356672A (en) * | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
US5256205A (en) * | 1990-05-09 | 1993-10-26 | Jet Process Corporation | Microwave plasma assisted supersonic gas jet deposition of thin film materials |
FR2667811B1 (fr) * | 1990-10-10 | 1992-12-04 | Snecma | Dispositif d'apport de poudre pour revetement par traitement au faisceau laser. |
US5342660A (en) * | 1991-05-10 | 1994-08-30 | Celestech, Inc. | Method for plasma jet deposition |
US5716494A (en) * | 1992-06-22 | 1998-02-10 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate |
CA2205817C (en) * | 1996-05-24 | 2004-04-06 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
JP3917703B2 (ja) * | 1997-02-18 | 2007-05-23 | スピードファム株式会社 | プラズマエッチング方法及びその装置 |
JP3275166B2 (ja) | 1997-02-28 | 2002-04-15 | 住友重機械工業株式会社 | プラズマビームの偏り修正機構を備えた真空成膜装置 |
JP3343200B2 (ja) * | 1997-05-20 | 2002-11-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6291800B1 (en) * | 1998-02-20 | 2001-09-18 | Tokyo Electron Limited | Heat treatment apparatus and substrate processing system |
US6392351B1 (en) * | 1999-05-03 | 2002-05-21 | Evgeny V. Shun'ko | Inductive RF plasma source with external discharge bridge |
EP1170066A1 (de) * | 2000-07-05 | 2002-01-09 | Förnsel, Peter | Verfahren und Vorrichtung zum Reinigen von Walzen oder Bänder |
US20040011378A1 (en) * | 2001-08-23 | 2004-01-22 | Jackson David P | Surface cleaning and modification processes, methods and apparatus using physicochemically modified dense fluid sprays |
JP2003100717A (ja) * | 2001-09-21 | 2003-04-04 | Tokyo Electron Ltd | プラズマ処理装置 |
EP1476497A1 (en) * | 2002-01-23 | 2004-11-17 | Glasshield Patent Holding Company, Ltd. | Method and apparatus for applying material to glass |
US20080190558A1 (en) * | 2002-04-26 | 2008-08-14 | Accretech Usa, Inc. | Wafer processing apparatus and method |
US7264849B2 (en) * | 2003-07-11 | 2007-09-04 | Optisolar, Inc. | Roll-vortex plasma chemical vapor deposition method |
US7332034B2 (en) * | 2003-11-21 | 2008-02-19 | Seiko Epson Corporation | Coating apparatus and coating method using the same |
KR101121417B1 (ko) * | 2004-10-28 | 2012-03-15 | 주성엔지니어링(주) | 표시소자의 제조장치 |
US20060213615A1 (en) * | 2004-12-16 | 2006-09-28 | Sematech, Inc. | Laser nozzle cleaning tool |
US20060172081A1 (en) * | 2005-02-02 | 2006-08-03 | Patrick Flinn | Apparatus and method for plasma treating and dispensing an adhesive/sealant onto a part |
JP2006237479A (ja) * | 2005-02-28 | 2006-09-07 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置 |
JP4453021B2 (ja) * | 2005-04-01 | 2010-04-21 | セイコーエプソン株式会社 | 半導体装置の製造方法及び半導体製造装置 |
US7629556B2 (en) * | 2005-12-16 | 2009-12-08 | Sematech, Inc. | Laser nozzle methods and apparatus for surface cleaning |
CA2637883C (en) * | 2006-01-31 | 2015-07-07 | Regents Of The University Of Minnesota | Electrospray coating of objects |
JP4362834B2 (ja) * | 2006-10-11 | 2009-11-11 | セイコーエプソン株式会社 | 半導体装置の製造方法、電子機器の製造方法および半導体製造装置 |
JP5014811B2 (ja) * | 2007-01-22 | 2012-08-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
JP4573902B2 (ja) * | 2008-03-28 | 2010-11-04 | 三菱電機株式会社 | 薄膜形成方法 |
DE102008051801A1 (de) * | 2008-04-18 | 2009-10-22 | Plasma Treat Gmbh | Vorrichtung zum Behandeln einer inneren Oberfläche eines Werkstücks |
-
2006
- 2006-08-07 TW TW095128840A patent/TWI341872B/zh active
- 2006-12-21 US US11/644,861 patent/US7923076B2/en active Active
-
2007
- 2007-04-23 JP JP2007113005A patent/JP4603566B2/ja active Active
-
2011
- 2011-02-01 US US13/019,269 patent/US8281741B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0762546A (ja) * | 1993-08-25 | 1995-03-07 | Shinko Electric Co Ltd | 大気圧プラズマ表面処理装置 |
JPH11335868A (ja) * | 1998-05-20 | 1999-12-07 | Seiko Epson Corp | 表面処理方法及び装置 |
JP2005347278A (ja) * | 2000-07-28 | 2005-12-15 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2002151436A (ja) * | 2000-11-15 | 2002-05-24 | Sekisui Chem Co Ltd | 半導体素子の製造方法及びその装置 |
JP2003218099A (ja) * | 2002-01-21 | 2003-07-31 | Sekisui Chem Co Ltd | 放電プラズマ処理方法及びその装置 |
JP2004115896A (ja) * | 2002-09-27 | 2004-04-15 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及び放電プラズマ処理方法 |
JP2005070647A (ja) * | 2003-08-27 | 2005-03-17 | Konica Minolta Holdings Inc | 光学物品及びその製造装置 |
JP2005144318A (ja) * | 2003-11-14 | 2005-06-09 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
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JP2008038246A (ja) | 2008-02-21 |
US8281741B2 (en) | 2012-10-09 |
TWI341872B (en) | 2011-05-11 |
US20110120372A1 (en) | 2011-05-26 |
US20080032063A1 (en) | 2008-02-07 |
US7923076B2 (en) | 2011-04-12 |
TW200808985A (en) | 2008-02-16 |
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