JP4603362B2 - 電荷変調領域を有するリング共振器を有する光ビーム変調方法および装置 - Google Patents
電荷変調領域を有するリング共振器を有する光ビーム変調方法および装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 12
- 230000003287 optical effect Effects 0.000 claims description 121
- 239000004065 semiconductor Substances 0.000 claims description 82
- 239000000463 material Substances 0.000 claims description 57
- 239000002800 charge carrier Substances 0.000 claims description 25
- 230000004044 response Effects 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 19
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 108091006149 Electron carriers Proteins 0.000 description 2
- 230000005697 Pockels effect Effects 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 239000000382 optic material Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
- G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
- G02B6/29338—Loop resonators
- G02B6/29343—Cascade of loop resonators
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
- G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials
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Description
近年、複数のマイクロエレクトロニックメカニカルシステム(MEMS)が複数の小型機械スイッチに使用されるようになってきた。MEMSは、シリコンを基礎としており、いくらか従来のシリコン工程技術を使用して加工されるため、人気がある。しかしながら、MEMS技術は、一般的に物理部品または構成部品の実際の機械的な動きに依存しているため、一般的にMEMSは、例えば、ミリ秒単位の複数の応答時間を有するアプリケーション等の低速の光アプリケーションに制限される。
なお、本出願に対応する外国の特許出願においては下記の文献が発見または提出されている。
リング共振器導波路107の共振条件が波長λRに一致するときは、光ビーム115の波長λR部はリング共振器導波路107内に徐々に接続される。光ビーム115の波長λR部分は、リング共振器107内を伝播し、徐々に導波路109内に接続される。その後、光ビーム115の波長XR部分は、導波路109中および導波路109の帰還ポートから伝搬するが、これは図1の左上に図示してある。共振器導波路107が光ビーム115の特定の波長(例えば、λxまたはλZ)と共振しない場合、光ビーム115のそれらの波長は、リング共振器導波路107を通過した導波路105を通って、導波路109の出力ポートから進行するが、これは図1の右下に図示してある。
当然のことながら、リング共振器導波路507は、図1のリング共振器導波路107の1つの実施形態に対応させることもでき、代替の実施形態として利用することができ、図2のリング共振器導波路207または図4のリング共振器導波路407に対応させることもできる。図5に図示した実施形態において、リング共振器導波路507は、半導体材料の2層503と504との間に配置された1つの絶縁体層523を含む1つの導波路である。
Claims (21)
- 半導体材料に配置された、共振条件を有するリング共振器と、
前記リング共振器に光接続された、半導体材料に配置された入力光導波路と、
前記リング共振器に光接続された、半導体材料に配置された出力光導波路と、
前記リング共振器に配置された、前記リング共振器の共振条件を調整するべく変調を受ける電荷変調領域と
を備え、
前記リング共振器は、
p型ドーピングを含む第1半導体層、
n型ドーピングを含む第2半導体層、および
前記第1半導体層と前記第2半導体層との間に配置された絶縁体層
を含み、
前記電荷変調領域は、前記第1半導体層および前記第2半導体層の自由電荷キャリアによって形成される、装置。 - 前記リング共振器の共振条件に合う光ビームの波長が、前記リング共振器を介して、前記入力光導波路から前記出力光導波路に方向付けられる、請求項1に記載の装置。
- 前記第1半導体層と、前記絶縁体層と、前記第2半導体層とは、前記リング共振器に配置された前記電荷変調領域を変調する容量性構造を形成する、請求項1に記載の装置。
- 前記第1半導体層または前記第2半導体層は、変調信号を受信するように接続され、前記電荷変調領域は、前記変調信号に応じて変調を受ける、請求項3に記載の装置。
- 前記リング共振器は、前記半導体材料に配置された複数のリング共振器の1つであり、
前記複数のリング共振器はそれぞれ、前記入力光導波路を通る光ビームの異なる波長に合う、異なる共振条件を有し、前記入力光導波路に光接続される、請求項1に記載の装置。 - 前記出力光導波路は、前記半導体材料に配置された複数の出力光導波路の1つであり、前記複数のリング共振器はそれぞれ、前記複数の出力光導波路のうちの対応する1つと光接続される、請求項5に記載の装置。
- 前記複数のリング共振器はそれぞれ、複数の電荷変調領域のうちの対応する1つを含み、
前記複数の電荷変調領域はそれぞれ変調を受けて、前記複数のリング共振器それぞれの異なる共振条件を調整する、請求項5に記載の装置。 - 前記リング共振器は、前記入力光導波路と前記出力光導波路との間に光接続された前記半導体材料に配置された複数のリング共振器の1つである、請求項1に記載の装置。
- 前記複数のリング共振器の複数の共振条件は同じ共振条件となるように変調を受けて、前記複数のリング共振器の前記共振条件に合う光ビームの波長が、前記複数のリング共振器を介して、前記入力光導波路から前記出力光導波路へ方向付けられる、請求項8に記載の装置。
- 前記複数のリング共振器の共振条件に合う光ビームの波長は、前記複数のリング共振器の、変調された前記複数の共振条件に応じて変調される、請求項9に記載の装置。
- 半導体材料に配置された入力光導波路に光ビームを方向付ける段階と、
前記入力光導波路に近接した前記半導体材料に配置されたリング共振器に配置された電荷変調領域を変調して前記リング共振器の共振条件を調整する段階と、
前記リング共振器を光接続して、前記共振条件に合う前記光ビームの波長を前記入力光導波路から受信する段階と、
前記リング共振器に近接した前記半導体材料に配置された出力光導波路へ、前記共振条件に合う前記光ビームであって前記電荷変調領域に応じて変調される前記光ビームの前記波長を前記リング共振器から方向付ける段階と
を備え、
前記リング共振器は、
p型ドーピングを含む第1半導体層、
n型ドーピングを含む第2半導体層、および
前記第1半導体層と前記第2半導体層との間に配置された絶縁体層
を含み、
前記電荷変調領域は、前記第1半導体層および前記第2半導体層の自由電荷キャリアによって形成される、方法。 - 前記電荷変調領域を変調する段階は、変調信号により、前記電荷変調領域を前記光ビームの波長と共振すべく駆動する段階を備える、請求項11に記載の方法。
- 前記電荷変調領域を変調する段階は、変調信号により、前記電荷変調領域を前記光ビームの波長との共振から外れるべく駆動する段階を備える、請求項11に記載の方法。
- 前記電荷変調領域を変調する段階は、前記絶縁体層に近接した電荷を変調する段階を備える、請求項11に記載の方法。
- 前記リング共振器に配置された電荷変調領域を変調する段階は、前記リング共振器の屈折率を変調する段階を備える、請求項11に記載の方法。
- 前記リング共振器に配置された前記電荷変調領域を変調する段階は、前記リング共振器における前記光ビームの波長の位相を変調することを含む、請求項11に記載の方法。
- 光ビームを送信する光送信機と、
前記光送信機に光接続されて前記光ビームを受信する光学装置と
を備え、
前記光学装置は、
前記光ビームを受信するべく光接続された、半導体材料に配置された入力光導波路と、
前記半導体材料に配置された、共振条件を有するリング共振器であって、前記入力光導波路に光接続されたリング共振器と、
前記リング共振器に光接続された、前記半導体材料に配置された出力光導波路と、
前記リング共振器に配置された電荷変調領域と
を備え、
前記リング共振器は、
p型ドーピングを含む第1半導体層、
n型ドーピングを含む第2半導体層、および
前記第1半導体層と前記第2半導体層との間に配置された絶縁体層
を含み、
前記電荷変調領域は、前記リング共振器の共振条件を調整するべく変調を受けて、前記リング共振器の共振条件に合う光ビームの波長が、前記リング共振器を介して、前記入力光導波路から前記出力光導波路に方向付けられ、前記第1半導体層および前記第2半導体層の自由電荷キャリアによって形成される、システム。 - 前記出力光導波路に光接続されて、前記リング共振器の前記共振条件に合う前記光ビームの前記波長を受信する1つの光受信機であって、前記光ビームの前記波長が前記電荷変調領域に応じて変調される、請求項17に記載のシステム。
- 前記第1半導体層と、前記絶縁体層と、前記第2半導体層とは、前記リング共振器に配置された前記電荷変調領域を変調する容量性構造を形成する、請求項17記載のシステム。
- 前記リング共振器は、リブ領域とスラブ領域とを含むリブ導波路である、請求項1に記載の装置。
- 前記変調信号に応じて、正および負の電荷キャリアが前記絶縁体層に近接した領域内に掃引される、請求項4に記載の装置。
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US10/280,397 US20040081386A1 (en) | 2002-10-25 | 2002-10-25 | Method and apparatus for modulating an optical beam with a ring resonator having a charge modulated region |
PCT/US2003/033222 WO2004040364A1 (en) | 2002-10-25 | 2003-10-20 | Method and apparatus for modulating an optical beam with a ring resonator having a charge modulated region |
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US7663762B2 (en) * | 2002-07-09 | 2010-02-16 | Finisar Corporation | High-speed transmission system comprising a coupled multi-cavity optical discriminator |
US7263291B2 (en) * | 2002-07-09 | 2007-08-28 | Azna Llc | Wavelength division multiplexing source using multifunctional filters |
US7536113B2 (en) * | 2002-11-06 | 2009-05-19 | Finisar Corporation | Chirp managed directly modulated laser with bandwidth limiting optical spectrum reshaper |
US7280721B2 (en) * | 2002-11-06 | 2007-10-09 | Azna Llc | Multi-ring resonator implementation of optical spectrum reshaper for chirp managed laser technology |
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-
2002
- 2002-10-25 US US10/280,397 patent/US20040081386A1/en not_active Abandoned
-
2003
- 2003-10-20 JP JP2004548401A patent/JP4603362B2/ja not_active Expired - Fee Related
- 2003-10-20 EP EP03777716A patent/EP1556735A1/en not_active Withdrawn
- 2003-10-20 WO PCT/US2003/033222 patent/WO2004040364A1/en active Application Filing
- 2003-10-20 CN CNB2003801019626A patent/CN100397230C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
US20040081386A1 (en) | 2004-04-29 |
WO2004040364A1 (en) | 2004-05-13 |
CN100397230C (zh) | 2008-06-25 |
EP1556735A1 (en) | 2005-07-27 |
AU2003286516A1 (en) | 2004-05-25 |
CN1708725A (zh) | 2005-12-14 |
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