JP4581655B2 - Heat sink - Google Patents

Heat sink Download PDF

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JP4581655B2
JP4581655B2 JP2004345361A JP2004345361A JP4581655B2 JP 4581655 B2 JP4581655 B2 JP 4581655B2 JP 2004345361 A JP2004345361 A JP 2004345361A JP 2004345361 A JP2004345361 A JP 2004345361A JP 4581655 B2 JP4581655 B2 JP 4581655B2
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substrate
insulator
kneaded material
filler
inorganic filler
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JP2006156717A (en
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美智博 宮内
哲也 津村
悦夫 辻本
敬之 三好
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Description

本発明は、各種電子機器に用い、電子部品を装着して、電子部品から生ずる熱を放熱するとともに、電子部品と基板との絶縁性を確保した放熱板に関するものである。   The present invention relates to a heat radiating plate that is used in various electronic devices, mounts an electronic component, radiates heat generated from the electronic component, and ensures insulation between the electronic component and a substrate.

近年、電子機器の高性能化、小型化の要求に従い、電子部品の高密度、高機能化が一層叫ばれている。そのため、電子部品の小型化、高機能化、また高密度実装により、電子部品の温度上昇が大きな問題となり、電子部品の放熱を高める方法が重要となってきている。   In recent years, in accordance with demands for higher performance and smaller size of electronic devices, higher density and higher functionality of electronic components have been screamed. Therefore, due to the downsizing, high functionality, and high-density mounting of electronic components, the temperature rise of electronic components has become a major problem, and a method for increasing the heat dissipation of electronic components has become important.

電子部品の放熱を高める技術として、電子部品の背面にアルミ製の放熱板を装着し、電子部品の背面から熱を拡散する方式が知られている。   As a technique for increasing the heat dissipation of an electronic component, a method is known in which an aluminum heat sink is attached to the back of the electronic component and heat is diffused from the back of the electronic component.

図９は従来の放熱板に電子部品を装着した部品ユニットの斜視図である。図９において、従来の構成では、電子部品１を絶縁シート２で被覆し、金属製の放熱板３に取り付けている。取り付けは、絶縁シート２で被覆された電子部品１をバネ４で押さえ、放熱板３に開けた取り付け用の孔にネジ５を挿入してネジ止めすることにより行う。   FIG. 9 is a perspective view of a component unit in which electronic components are mounted on a conventional heat sink. In FIG. 9, in the conventional configuration, the electronic component 1 is covered with an insulating sheet 2 and attached to a metal heat sink 3. Attachment is performed by holding the electronic component 1 covered with the insulating sheet 2 with a spring 4, inserting a screw 5 into an attachment hole formed in the heat radiating plate 3, and screwing it.

これにより、電子部品１は、金属製の放熱板３との間で、絶縁性を確保しつつ、放熱を行うことができる。   Thereby, the electronic component 1 can radiate heat while securing insulation between the electronic component 1 and the metal heat radiating plate 3.

なお、この出願の発明に関連する先行技術文献情報としては、例えば特許文献１や特許文献２が知られている。
特開平５−２８８８７３号公報 特開平８−４５７４８号公報 For example, Patent Document 1 and Patent Document 2 are known as prior art document information related to the invention of this application.
JP-A-5-288873 JP-A-8-45748

上記従来の構成では、電子部品１を絶縁シート２で被覆して絶縁を行うので、電子部品１に対して、絶縁シート２の被覆位置がずれたり、絶縁距離が十分に取れなかったりして、高電圧のかかる回路において耐絶縁性が劣化するという問題点を有していた。   In the above conventional configuration, since the electronic component 1 is covered with the insulating sheet 2 for insulation, the covering position of the insulating sheet 2 is shifted with respect to the electronic component 1 or the insulation distance cannot be sufficiently obtained. In a circuit where high voltage is applied, the insulation resistance deteriorates.

本発明は上記問題点を解決するもので、放熱性を損なわずに、耐絶縁性を向上した放熱板を提供することを目的としている。   The present invention solves the above-described problems, and an object of the present invention is to provide a heat sink having improved insulation resistance without impairing heat dissipation.

上記目的を達成するために本発明は、基板と、前記基板に積層した絶縁体とを備え、前記絶縁体は、無機フィラーを含有する未硬化のエポキシ樹脂からなる熱硬化性の絶縁樹脂の混練物を、押し出し成形によってシート化し、前記基板上で表面を平坦にした状態で熱硬化して形成され、前記無機フィラーは第１の粒径を有した第１フィラーと第２の粒径を有した第２フィラーとを混合して形成され、前記無機フィラーの熱伝導率が前記絶縁樹脂の熱伝導率よりも大きく、前記無機フィラーの充填率は７０〜９５重量％であると共に、前記第１フィラーの隙間に前記第１のフィラーより平均粒径が小さい前記第２フィラーが充填され、前記絶縁体は、厚み０．４ｍｍより厚く２ｍｍ以下であると共に、強化絶縁耐圧を有する放熱板とする。 To accomplish the above object, comprises a substrate and an insulator laminated on the substrate, the insulator, the thermosetting insulating resin consisting of an uncured epoxy resin containing an inorganic filler kneading The product is formed into a sheet by extrusion molding and thermoset with the surface flattened on the substrate. The inorganic filler has a first filler having a first particle size and a second particle size. are formed by mixing the a second filler, the thermal conductivity of the inorganic filler is much larger than the thermal conductivity of the insulating resin, with filling ratio of the inorganic filler is 70 to 95 wt%, the second 1 is an average particle diameter of filler is smaller the second filler from the first filler in the gap of the filler, the insulating body, with at 2mm or less thicker than 0.4 mm, the heat radiating plate with enhanced dielectric strength .

上記構成により、基板に積層した絶縁体は、無機フィラーを含有した絶縁樹脂であって、無機フィラーの熱伝導率が絶縁樹脂の熱伝導率よりも大きいので、絶縁体に電子部品を装着すれば、放熱性を損なわずに、耐絶縁性を向上することができる。放熱性や絶縁性の必要度に応じて、基板に積層する絶縁体の面積を変えたり、無機フィラーの材質を選択したり、基板の材質を選択すれば、所望の特性を自由に得ることができる。   With the above configuration, the insulator laminated on the substrate is an insulating resin containing an inorganic filler, and since the thermal conductivity of the inorganic filler is larger than the thermal conductivity of the insulating resin, if an electronic component is mounted on the insulator, Insulation resistance can be improved without impairing heat dissipation. Depending on the necessity of heat dissipation and insulation, the desired characteristics can be freely obtained by changing the area of the insulator laminated on the substrate, selecting the inorganic filler material, or selecting the substrate material. it can.

以下、実施の形態を用いて、本発明の全請求項に記載の発明について、図面を参照しながら説明する。   Hereinafter, the invention described in all claims of the present invention will be described using embodiments with reference to the drawings.

図１は本発明の放熱板に電子部品を装着した部品ユニットの斜視図、図２は無機フィラーの充填率に対する混練物の熱伝導率の変化を示す特性図、図３は筐体に同ユニットを取り付けた際の取付状態を示す斜視図である。 Figure 1 is a perspective view of a component unit mounted electronic components on a hot plate release of the present invention, FIG. 2 is a characteristic diagram showing a change in thermal conductivity of the kneaded product for filling ratio of inorganic filler, 3 to the housing the It is a perspective view which shows the attachment state at the time of attaching a unit.

図１において、放熱板１０は、金属製の基板１２と、この基板１２に積層した絶縁体１４とを備えており、特に、この絶縁体１４は、無機フィラーを含有した絶縁樹脂からなるとともに、この無機フィラーの熱伝導率を絶縁樹脂の熱伝導率よりも大きくしたものである。   In FIG. 1, the heat sink 10 includes a metal substrate 12 and an insulator 14 laminated on the substrate 12. In particular, the insulator 14 is made of an insulating resin containing an inorganic filler, The thermal conductivity of this inorganic filler is made larger than that of the insulating resin.

無機フィラーは、Ａｌ2Ｏ3、ＭｇＯ、ＳｉＯ2、ＢＮおよびＡｌＮから選ばれる少なくとも一つを含んでいる。無機フィラーを用いると、放熱性が優れるが、特に、ＭｇＯを用いると線膨張係数を大きくでき、ＳｉＯ2を用いると誘電率を小さくでき、ＢＮを用いると線膨張係数を小さくできる。 The inorganic filler contains at least one selected from Al 2 O 3 , MgO, SiO 2 , BN, and AlN. When an inorganic filler is used, heat dissipation is excellent. In particular, the use of MgO can increase the linear expansion coefficient, the use of SiO 2 can reduce the dielectric constant, and the use of BN can reduce the linear expansion coefficient.

無機フィラーは略球形状で、その直径は０．１〜１００μｍであるが、粒径が小さいほど絶縁樹脂への充填率を向上できる。絶縁体１４に占める無機フィラーの充填量は、熱伝導率を上げるために、７０〜９５重量％と高濃度に充填している。特に、本実施の形態では、無機フィラーは、平均粒径３μｍと平均粒径１２μｍの２種類のＡｌ2Ｏ3を混合したものを用いている。この大小２種類の粒径のＡｌ2Ｏ3を用いることによって、大きな粒径のＡｌ2Ｏ3の隙間に小さな粒径のＡｌ2Ｏ3を充填できるので、Ａｌ2Ｏ3を９０重量％近くまで高濃度に充填できるものである。この場合、絶縁体１４の熱伝導率は３Ｗ／ｍＫ程度となる。 The inorganic filler has a substantially spherical shape and a diameter of 0.1 to 100 μm. The smaller the particle size, the better the filling rate into the insulating resin. The filling amount of the inorganic filler in the insulator 14 is filled at a high concentration of 70 to 95% by weight in order to increase the thermal conductivity. In particular, in the present embodiment, the inorganic filler is a mixture of two types of Al 2 O 3 having an average particle diameter of 3 μm and an average particle diameter of 12 μm. By using the Al 2 O 3 of the large and small two types of particle size, it is possible to fill the Al 2 O 3 of small particle size in the gap Al 2 O 3 of large particle size, Al 2 O 3 90 wt% near Can be filled to a high concentration. In this case, the thermal conductivity of the insulator 14 is about 3 W / mK.

図２に示すように、混練物２４に占める無機フィラーの充填率を上げていくと熱伝導率も比例して増加していく。これが充填率７０重量％を超えると、熱伝導率は急激に増加することから、充填率は７０重量％以上とする。これは、ある充填率を超えると、充填される熱伝導性のよい無機フィラーの粒子間の距離が短くなり、混練物２４としての熱伝導率が急に高くなる領域が存在するからだと考えられる。本発明では、この領域を利用することで混練物２４の熱伝導率を高くすることができるというものである。   As shown in FIG. 2, as the filling rate of the inorganic filler in the kneaded material 24 is increased, the thermal conductivity also increases in proportion. If this exceeds 70% by weight, the thermal conductivity increases rapidly, so the filling rate is 70% by weight or more. This is considered to be because when the filling rate exceeds a certain filling rate, the distance between the particles of the inorganic filler to be filled becomes short, and there is a region where the heat conductivity as the kneaded material 24 suddenly increases. . In the present invention, the heat conductivity of the kneaded material 24 can be increased by utilizing this region.

また、無機フィラーの充填率をさらに上げていくと、熱伝導率は増加するが、９５重量％を超えると、混練物２４として形状を保持できなくなってしまうため、充填率は７０〜９５重量％とするものである。   Further, if the filling rate of the inorganic filler is further increased, the thermal conductivity increases, but if it exceeds 95% by weight, the shape cannot be maintained as the kneaded material 24, so the filling rate is 70 to 95% by weight. It is what.

熱硬化性の絶縁樹脂は、エポキシ樹脂、フェノール樹脂およびシアネート樹脂の内、少なくとも１種類の樹脂を含んでいる。これらの樹脂は耐熱性や電気絶縁性に優れている。   The thermosetting insulating resin contains at least one resin among epoxy resin, phenol resin, and cyanate resin. These resins are excellent in heat resistance and electrical insulation.

絶縁体１４の厚さは、薄くすれば、放熱板１０に装着した電子部品１６に生じる熱を基板１２に伝えやすいが、逆に絶縁耐圧が問題となり、厚すぎると、熱抵抗が大きくなるので、絶縁耐圧と熱抵抗を考慮して最適な厚さに設定すれば良い。強化絶縁耐圧を考慮すれば、絶縁体１４の厚さを０．４ｍｍより厚く、また、熱抵抗を考慮すれば、２ｍｍ以下にするのが望ましい。特に、本実施の形態では、絶縁体１４の厚さを０．６ｍｍとしている。   If the thickness of the insulator 14 is reduced, the heat generated in the electronic component 16 mounted on the heat sink 10 can be easily transferred to the substrate 12, but conversely, the withstand voltage becomes a problem, and if it is too thick, the thermal resistance increases. The optimum thickness may be set in consideration of withstand voltage and thermal resistance. Considering the reinforced dielectric strength, it is desirable that the thickness of the insulator 14 is greater than 0.4 mm, and considering the thermal resistance, it is preferably 2 mm or less. In particular, in the present embodiment, the thickness of the insulator 14 is 0.6 mm.

金属製の基板１２としては、熱伝導の良いアルミニウム、銅またはそれらを主成分とする合金からできている。特に、本実施の形態では、基板１２の厚みを１ｍｍとしている。また、基板１２としては、単なる板状のものだけでなく、より放熱性を高めるため、絶縁体１４を積層した面とは反対側の面に、表面積を広げるためにフィン部を形成しても良い。全膨張係数は８×１０-6／℃〜２０×１０-6／℃としており、基板１２や半導体部品等の電子部品１６の線膨張係数に近づけることにより、放熱板１０の反りや歪みを小さくできる。 The metal substrate 12 is made of aluminum, copper, or an alloy containing them as a main component, which has good thermal conductivity. In particular, in the present embodiment, the thickness of the substrate 12 is 1 mm. Further, the substrate 12 is not limited to a simple plate-like one, and a fin portion may be formed on the surface opposite to the surface on which the insulator 14 is laminated in order to increase the surface area in order to further improve heat dissipation. good. The total expansion coefficient is set to 8 × 10 −6 / ° C. to 20 × 10 −6 / ° C., and the warpage and distortion of the heat sink 10 are reduced by being close to the linear expansion coefficient of the electronic component 16 such as the substrate 12 or the semiconductor component. it can.

この放熱板１０は図３に示すように、機器の筐体１８やシャーシに取り付けることができる。取り付けはネジ止めや接着等により行う。また、放熱板１０に装着された電子部品１６の接続端子２０を回路基板に接続すれば、回路基板上に放熱板１０付きの電子部品１６を実装することができる。   As shown in FIG. 3, the heat radiating plate 10 can be attached to a casing 18 or a chassis of the device. Installation is performed by screwing or bonding. Moreover, if the connection terminal 20 of the electronic component 16 mounted on the heat sink 10 is connected to the circuit board, the electronic component 16 with the heat sink 10 can be mounted on the circuit board.

このような放熱板１０の製造工程は次の通りである。   The manufacturing process of such a heat sink 10 is as follows.

放熱板１０の製造工程では、無機フィラーと未硬化の熱硬化性の絶縁樹脂を混練して形成した混練物２４を金属製の基板１２に積層する積層工程と、未硬化の絶縁樹脂を硬化する硬化工程とを備えている。   In the manufacturing process of the heat sink 10, a laminating process for laminating a kneaded material 24 formed by kneading an inorganic filler and an uncured thermosetting insulating resin on the metal substrate 12, and curing the uncured insulating resin. A curing step.

具体的には、図４（Ａ）において、混練物２４をフィルム２６上に所定の厚みになるようにシート化して積層する。シート化することにより容易に混練物２４を放熱板１０の形状にすることができ、低コストで生産性を良くすることができる。   Specifically, in FIG. 4A, the kneaded material 24 is formed into a sheet and laminated on the film 26 so as to have a predetermined thickness. By making it into a sheet, the kneaded material 24 can be easily formed into the shape of the radiator plate 10, and the productivity can be improved at low cost.

混練物２４をシート化する方法としては、ドクターブレード法、コーター法、押し出し成形法、圧延法等がある。本実施の形態では、押し出し成形法にて、ポリエチレンテレフタレート（ＰＥＴ）からなるフィルム２６上に混練物２４を積層している。混練物２４の厚さは、０．６ｍｍとしている。   As a method for forming the kneaded material 24 into a sheet, there are a doctor blade method, a coater method, an extrusion method, a rolling method, and the like. In the present embodiment, the kneaded material 24 is laminated on the film 26 made of polyethylene terephthalate (PET) by an extrusion molding method. The thickness of the kneaded material 24 is 0.6 mm.

他の方法としては、ディスペンサー、モーノポンプ、または押し出し成形機等により、基板１２上に混練物２４を必要量塗布し、表面を平坦にするように、混練物２４をローラー２８で押圧して形成する方法でも良い。   As another method, a necessary amount of the kneaded material 24 is applied onto the substrate 12 by a dispenser, a mono pump, an extrusion molding machine, or the like, and the kneaded material 24 is pressed with a roller 28 so as to flatten the surface. The method is fine.

また、予め、混練物２４をシート化しておいて、基板１２に積層しても良い。   Alternatively, the kneaded material 24 may be formed into a sheet in advance and laminated on the substrate 12.

次に、図４（Ｂ）において、ローラー２８を用いて、フィルム２６上から混練物２４を基板１２に押し付けるように、フィルム２６の端から順に押圧し、基板１２に混練物２４を積層する（積層工程）。この際、基板１２と混練物２４との間には、空気を挟まないように押し付けている。特に、５００００Ｐａ以下の圧力の真空雰囲気中で行うと、基板１２と混練物２４との間に空気が噛みこんでボイドが発生するのを防ぐことができる。   Next, in FIG. 4B, using the roller 28, the kneaded material 24 is pressed from the end of the film 26 in order to press the kneaded material 24 against the substrate 12, and the kneaded material 24 is laminated on the substrate 12 ( Lamination process). At this time, the substrate 12 and the kneaded material 24 are pressed so as not to sandwich air. In particular, when performed in a vacuum atmosphere at a pressure of 50000 Pa or less, it is possible to prevent air from being caught between the substrate 12 and the kneaded material 24 and generating voids.

次に、図４（Ｃ）において、混練物２４からフィルム２６を剥離し、フィルム２６上に積層した混練物２４を基板１２に転写する。   Next, in FIG. 4C, the film 26 is peeled from the kneaded material 24, and the kneaded material 24 laminated on the film 26 is transferred to the substrate 12.

最後に、混練物２４に含まれる熱硬化性の絶縁樹脂を熱硬化させることにより（硬化工程）、未硬化の絶縁樹脂が硬化して絶縁体１４が形成され、放熱板１０を得ることができる。   Finally, by thermosetting the thermosetting insulating resin contained in the kneaded material 24 (curing step), the uncured insulating resin is cured to form the insulator 14, and the heat sink 10 can be obtained. .

この硬化工程では、フィルム２６を剥離した後、これに熱を加えて熱硬化性の絶縁樹脂を硬化させるが、加熱条件として熱硬化性の絶縁樹脂をＣステージまで硬化させるため、１５０℃から２００℃で１時間から６時間加熱する。本実施の形態では、１７０℃で３時間加熱した。   In this curing step, after the film 26 is peeled off, heat is applied to the film 26 to cure the thermosetting insulating resin. However, since the thermosetting insulating resin is cured up to the C stage as a heating condition, the film is heated from 150 ° C. to 200 ° C. Heat at 0 ° C. for 1 to 6 hours. In this embodiment mode, heating is performed at 170 ° C. for 3 hours.

また、硬化工程において次のような加熱の仕方を行っても良い。基板１２上に混練物２４を積層し、熱硬化性の絶縁樹脂の硬化度合いがＢステージになるまで硬化させる。それを更に、Ｃステージまで硬化するように２段階で硬化させる。このＢステージの状態で、電子部品１６を装着するための位置決め用の位置決め穴を形成したり、不必要な混練物２４を除去したり、所望の形状になるように混練物２４を加工する。この状態で加熱してＣステージまで硬化させる。Ｂステージに硬化させる前でも、混練物２４を加工することができるが、この方法の方が形状変化の少ない放熱板１０を得易い。また、電子部品１６を混練物２４上に装着した後、加熱することもできる。この方法では、熱硬化性の絶縁樹脂が一度溶融するため接着剤を用いずに電子部品１６を固定することができる。   Moreover, you may perform the following heating methods in a hardening process. The kneaded material 24 is laminated on the substrate 12 and cured until the thermosetting insulating resin is cured to a B stage. It is further cured in two stages so as to cure to the C stage. In this B stage state, positioning holes for positioning for mounting the electronic component 16 are formed, unnecessary kneaded material 24 is removed, or the kneaded material 24 is processed into a desired shape. In this state, it is heated and cured to the C stage. The kneaded material 24 can be processed even before being cured to the B stage, but this method makes it easier to obtain the heat sink 10 with less shape change. Alternatively, the electronic component 16 can be heated after being mounted on the kneaded product 24. In this method, since the thermosetting insulating resin melts once, the electronic component 16 can be fixed without using an adhesive.

また、この硬化工程において、フィルム２６をつけたまま熱硬化性の絶縁樹脂を加熱してＢあるいはＣステージにしてからフィルム２６を除去してもよい。   Further, in this curing step, the film 26 may be removed after the thermosetting insulating resin is heated to the B or C stage with the film 26 attached.

次に、本発明の他の実施の形態における放熱板１０の製造工程について説明する。   Next, the manufacturing process of the heat sink 10 according to another embodiment of the present invention will be described.

この放熱板１０の製造工程は次の通りである。   The manufacturing process of this heat sink 10 is as follows.

図５（Ａ）、図５（Ｂ）において、基板１２に混練物２４を積層する積層工程は前述の本実施の形態の製造工程と同様であるが、混練物２４を完全にシート化せず、また、混練物２４の表面を完全に平坦にせずに、次の工程で許容できる状態にしておいてもよい。   5A and 5B, the laminating process for laminating the kneaded product 24 on the substrate 12 is the same as the manufacturing process of the present embodiment described above, but the kneaded product 24 is not completely formed into a sheet. Further, the surface of the kneaded material 24 may be allowed to be acceptable in the next step without being completely flattened.

図５（Ｃ）において、基板１２に積層した混練物２４は、熱盤３０で挟んで加圧と加熱を行い、未硬化の熱硬化性の絶縁樹脂を硬化する。   In FIG. 5C, the kneaded material 24 stacked on the substrate 12 is pressed and heated by being sandwiched by a hot platen 30, and the uncured thermosetting insulating resin is cured.

図５（Ｄ）において、熱盤３０をはずせば、混練物２４は絶縁体１４として形成される。   In FIG. 5D, the kneaded material 24 is formed as the insulator 14 when the hot platen 30 is removed.

この方法では加圧により混練物２４の厚みは薄くなるため、熱盤３０に挟み込む前の混練物２４の厚さは、熱盤３０で挟み込んだ後の欲しい厚さに対して、予め厚くしておく必要がある。本工程では、最終的な基板１２に形成される絶縁体１４の厚みを０．６ｍｍにするため、基板１２に積層した時点の混練物２４の厚みを１ｍｍにしている。   In this method, since the thickness of the kneaded material 24 is reduced by pressurization, the thickness of the kneaded material 24 before being sandwiched by the hot platen 30 is previously increased with respect to the desired thickness after being sandwiched by the hot platen 30. It is necessary to keep. In this step, in order to set the thickness of the insulator 14 formed on the final substrate 12 to 0.6 mm, the thickness of the kneaded material 24 when it is laminated on the substrate 12 is set to 1 mm.

また、この硬化工程では、混練物２４と熱盤３０との間に混練物２４と金型とを離型し易くするために、混練物２４の表面に耐熱性のあるＰＥＴからなるフィルム２６を付けた状態で、熱盤３０に挟み込んでもよい。これにより、混練物２４が熱盤３０に付着することを防ぐことができる。   In this curing step, a film 26 made of heat-resistant PET is formed on the surface of the kneaded material 24 so that the kneaded material 24 and the mold are easily released between the kneaded material 24 and the hot platen 30. It may be sandwiched between the hot plates 30 in the attached state. Thereby, the kneaded material 24 can be prevented from adhering to the hot platen 30.

熱盤３０で挟み込んだ後は、フィルム２６を剥離する。   After being sandwiched by the hot platen 30, the film 26 is peeled off.

さらに、本発明の他の実施の形態における放熱板１０の製造工程について説明する。   Furthermore, the manufacturing process of the heat sink 10 in other embodiment of this invention is demonstrated.

図６（Ａ）、図６（Ｂ）において、基板１２に混練物２４を積層する積層工程は前述の本実施の形態の製造工程と同様であるが、混練物２４を完全にシート化せず、また、混練物２４の表面を完全に平坦にせずに、次の工程で許容できる状態にしておいてもよい。   6A and 6B, the laminating process for laminating the kneaded material 24 on the substrate 12 is the same as the manufacturing process of the above-described embodiment, but the kneaded material 24 is not completely formed into a sheet. Further, the surface of the kneaded material 24 may be allowed to be acceptable in the next step without being completely flattened.

図６（Ｃ）において、混練物２４を積層した基板１２を上金型３２と下金型３４内に設置する。   In FIG. 6C, the substrate 12 on which the kneaded material 24 is laminated is placed in an upper mold 32 and a lower mold 34.

上金型３２には混練物２４を所定の形状に成形するための凹凸が設けられている。   The upper mold 32 is provided with irregularities for forming the kneaded material 24 into a predetermined shape.

図６（Ｄ）において、上金型３２と下金型３４を閉じて混練物２４を加圧・加熱して成形を行う。   In FIG. 6D, the upper mold 32 and the lower mold 34 are closed and the kneaded material 24 is pressurized and heated to perform molding.

この時、上金型３２と下金型３４は、１５０℃程度に昇温されており、混練物２４を加熱してＢあるいはＣステージにする。この場合、加熱時間が５分程度と短い場合はＢステージであるが、それ以上の時間ではＣステージになる。   At this time, the upper mold 32 and the lower mold 34 are heated to about 150 ° C., and the kneaded material 24 is heated to the B or C stage. In this case, when the heating time is as short as about 5 minutes, the B stage is used, but when the heating time is longer than that, the C stage is used.

図６（Ｅ）において、加圧・加熱を経て、混練物２４は絶縁体１４として形成される。   In FIG. 6E, the kneaded material 24 is formed as the insulator 14 through pressurization and heating.

この放熱板１０の絶縁体１４には、凹部３６が形成されるので、図７に示すように、この凹部３６に電子部品１６を装着すれば装着が容易となる。   Since the recess 14 is formed in the insulator 14 of the heat radiating plate 10, as shown in FIG. 7, if the electronic component 16 is mounted in the recess 36, the mounting becomes easy.

この電子部品１６の装着方法としては、例えば、Ｃステージまで硬化させた状態で、接着剤で装着する方法があるが、次のような装着方法でもよい。   As a method for mounting the electronic component 16, for example, there is a method of mounting with an adhesive in a state of being cured to the C stage, but the following mounting method may be used.

Ｂステージの状態で電子部品１６を凹部３６に置いて１５０℃前後で加熱し、熱硬化性の絶縁樹脂が一度溶融して電子部品１６と混練物２４とを熱硬化性の絶縁樹脂で接着してから、Ｃステージまで硬化させてもよい。これによると、熱硬化性の絶縁樹脂がある程度の硬度を有することになり、電子部品１６が自重で混練物２４に沈み込むことを防げる。より接着力を上げる場合には、電子部品１６を混練物２４に加圧しながら加熱すると良い。   In the state of B stage, the electronic component 16 is placed in the recess 36 and heated at around 150 ° C., the thermosetting insulating resin is once melted, and the electronic component 16 and the kneaded material 24 are bonded with the thermosetting insulating resin. Then, it may be cured up to the C stage. According to this, the thermosetting insulating resin has a certain degree of hardness, and the electronic component 16 can be prevented from sinking into the kneaded material 24 by its own weight. In order to further increase the adhesive force, the electronic component 16 may be heated while being pressed against the kneaded material 24.

このように本実施の形態では、絶縁樹脂よりも熱伝導率の大きい無機フィラーを含有した混練物２４を基板１２に積層し、未硬化の絶縁樹脂を硬化するので、この混練物２４を積層した基板１２に電子部品１６を装着すれば、放熱性を損なわずに、耐絶縁性を向上することができる。放熱性や絶縁性の必要度に応じて、基板１２に積層する混練物２４の面積を変えたり、無機フィラーの材質を選択したり、基板１２の材質を選択すれば、所望の特性を自由に得ることができる。   As described above, in this embodiment, the kneaded material 24 containing the inorganic filler having a higher thermal conductivity than the insulating resin is laminated on the substrate 12 and the uncured insulating resin is cured. If the electronic component 16 is mounted on the substrate 12, the insulation resistance can be improved without impairing heat dissipation. If the area of the kneaded material 24 laminated on the substrate 12 is changed, the material of the inorganic filler is selected, or the material of the substrate 12 is selected according to the necessity of heat dissipation or insulation, desired characteristics can be freely set. Obtainable.

なお、本発明の実施の形態では、基板１２の一方の面にしか絶縁樹脂を積層せず、基板１２の一方の面にのみ絶縁体１４を形成したが、基板１２の他方の面にも絶縁樹脂を積層して絶縁体１４を形成したり、基板１２の端面にも絶縁樹脂を塗布し基板１２を絶縁樹脂で被覆して絶縁体１４を形成したりしてもよい。これによると、絶縁体１４は基板１２の主平面の両側に形成されるので、両側に電子部品１６を装着でき、機器の小型化を行うことができる。また、基板１２の端面にも絶縁体１４を形成すれば、より絶縁を確保できるため、絶縁距離を短くでき機器の小型化を行うことができる。   In the embodiment of the present invention, the insulating resin is laminated only on one surface of the substrate 12 and the insulator 14 is formed only on one surface of the substrate 12, but the other surface of the substrate 12 is also insulated. The insulator 14 may be formed by laminating a resin, or the insulator 14 may be applied to the end surface of the substrate 12 and the substrate 12 may be covered with the insulating resin to form the insulator 14. According to this, since the insulator 14 is formed on both sides of the main plane of the substrate 12, the electronic component 16 can be mounted on both sides, and the device can be downsized. Further, if the insulator 14 is also formed on the end face of the substrate 12, insulation can be further ensured, so that the insulation distance can be shortened and the device can be downsized.

さらに、図８に示すように、基板１２に積層する絶縁体１４は、基板１２の一部に形成しても、全面に形成しても良く、また、電子部品１６に要求される絶縁耐圧によって、電子部品１６が装着される部分のみに絶縁体１４を積層したり、電子部品１６の装着される部分のみに絶縁体１４を積層せずに、その周囲に積層したりしても良い。   Further, as shown in FIG. 8, the insulator 14 laminated on the substrate 12 may be formed on a part of the substrate 12 or on the entire surface, and depending on the withstand voltage required for the electronic component 16. Alternatively, the insulator 14 may be stacked only on a portion where the electronic component 16 is mounted, or may be stacked around the insulator 14 instead of only on a portion where the electronic component 16 is mounted.

絶縁体１４の積層面積に応じて、絶縁樹脂の使用量を減らすこともでき、コストダウンも行える。また、絶縁体１４を積層していない部分では（金属製の基板１２が露出する部分では）、放熱板１０を各種の機器の筐体１８に取り付けるためのネジ等を取り付けることができ、絶縁体１４にクラック等も発生させずに取り付けることもできる。   Depending on the laminated area of the insulator 14, the amount of insulating resin used can be reduced, and the cost can be reduced. Further, in a portion where the insulator 14 is not laminated (in a portion where the metal substrate 12 is exposed), a screw or the like for attaching the heat radiating plate 10 to the casing 18 of various devices can be attached. It can also be attached to 14 without causing cracks or the like.

以上のように本発明の放熱板は、放熱と絶縁の必要な電子部品を装着し、放熱性と絶縁性を向上させることができるので、各種の電子機器に用いることができる。 Hot plate release of the present invention as described above, the heat dissipation required electronic components of the insulation is attached, it is possible to improve heat dissipation and insulating properties, can be used in various electronic apparatuses.

本発明の放熱板に電子部品を装着した部品ユニットの斜視図Perspective view of a component unit mounted electronic components on a hot plate release of the present invention 無機フィラーの充填率に対する混練物の熱伝導率の変化を示す特性図Characteristic diagram showing the change in thermal conductivity of the kneaded material with respect to the filling rate of the inorganic filler 筐体に同部品ユニットを取り付けた際の取付状態を示す斜視図The perspective view which shows the attachment state at the time of attaching the component unit to a housing | casing 本発明の実施の形態における同放熱板の製造工程図Manufacturing process diagram of the heat sink in the embodiment of the present invention 他の実施の形態における同放熱板の製造工程図Manufacturing process diagram of the heat sink in other embodiments 他の実施の形態における同放熱板の製造工程図Manufacturing process diagram of the heat sink in other embodiments 他の実施の形態における部品ユニットの断面図Sectional drawing of the component unit in other embodiment 他の実施の形態における部品ユニットの斜視図The perspective view of the component unit in other embodiment 従来の放熱板に電子部品を装着した部品ユニットの斜視図Perspective view of a component unit with electronic components mounted on a conventional heat sink

１０ 放熱板
１２ 基板
１４ 絶縁体
１６ 電子部品
１８ 筐体
２０ 接続端子
２４ 混練物
２６ フィルム
２８ ローラー
３０ 熱盤
３２ 上金型
３４ 下金型
３６ 凹部 DESCRIPTION OF SYMBOLS 10 Heat sink 12 Board | substrate 14 Insulator 16 Electronic component 18 Case 20 Connection terminal 24 Kneaded material 26 Film 28 Roller 30 Heating board 32 Upper die 34 Lower die 36 Recessed part

Claims (2)

基板と、前記基板に積層した絶縁体とを備え、
前記絶縁体は、無機フィラーを含有する未硬化のエポキシ樹脂からなる熱硬化性の絶縁樹脂の混練物を、押し出し成形によってシート化し、前記基板上で表面を平坦にした状態で熱硬化して形成され、
前記無機フィラーは第１の粒径を有した第１フィラーと第２の粒径を有した第２フィラーとを混合して形成され、
前記無機フィラーの熱伝導率が前記絶縁樹脂の熱伝導率よりも大きく、
前記無機フィラーの充填率は７０〜９５重量％であると共に、
前記第１フィラーの隙間に前記第１のフィラーより平均粒径が小さい前記第２フィラーが充填され、
前記絶縁体は、厚み０．４ｍｍより厚く２ｍｍ以下であると共に、強化絶縁耐圧を有する放熱板。 A substrate and an insulator laminated on the substrate;
Forming said insulator, the kneaded product of the thermosetting insulating resin consisting of an uncured epoxy resin containing an inorganic filler, and a sheet by extrusion, and heat-cured in a state of a flat surface on said substrate And
The inorganic filler is formed by mixing a first filler having a first particle size and a second filler having a second particle size ,
The thermal conductivity of the inorganic filler is much larger than the thermal conductivity of the insulating resin,
The filling rate of the inorganic filler is 70 to 95% by weight,
The gap between the first filler is filled with the second filler having an average particle size smaller than that of the first filler,
The insulator is a heat sink having a thickness greater than 0.4 mm and less than or equal to 2 mm and having a reinforced dielectric strength . 絶縁体の基板への積層は５００００Ｐａ以下の真空雰囲気中で行う請求項１に記載の放熱板。 The heat sink according to claim 1, wherein the insulator is laminated on the substrate in a vacuum atmosphere of 50000 Pa or less.
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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197895A (en) * 1982-05-14 1983-11-17 東芝テック株式会社 Printed circuit metal board
JPH0413945B2 (en) * 1985-06-13 1992-03-11 Fuji Electrochemical Co Ltd
WO1995006957A1 (en) * 1993-09-03 1995-03-09 Kabushiki Kaisha Sekuto Kagaku Radiating plate and cooling method using same
JPH0794864A (en) * 1993-09-22 1995-04-07 Mitsubishi Plastics Ind Ltd Manufacture of metal base printed wiring board
JPH08139234A (en) * 1994-11-11 1996-05-31 Mitsubishi Electric Corp Semiconductor device
JP2000353772A (en) * 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd Thermally conductive resin composition structure and manufacture thereof and, thermal conductive board formed of the same and manufacture thereof
JP2002033558A (en) * 2000-07-18 2002-01-31 Matsushita Electric Ind Co Ltd Circuit board and its manufacturing method
JP2002355835A (en) * 2001-03-30 2002-12-10 Matsushita Electric Ind Co Ltd Method for producing heat conductive substrate
JP2003152143A (en) * 2001-03-19 2003-05-23 Matsushita Electric Ind Co Ltd Method for manufacture of thermally conductive substrate
JP2003198166A (en) * 2001-12-27 2003-07-11 Polymatech Co Ltd Cooling method of heat generating electronic component and thermal conductive sheet for use therein
JP4111187B2 (en) * 2004-11-30 2008-07-02 松下電器産業株式会社 Manufacturing method of component unit

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197895A (en) * 1982-05-14 1983-11-17 東芝テック株式会社 Printed circuit metal board
JPH0413945B2 (en) * 1985-06-13 1992-03-11 Fuji Electrochemical Co Ltd
WO1995006957A1 (en) * 1993-09-03 1995-03-09 Kabushiki Kaisha Sekuto Kagaku Radiating plate and cooling method using same
JPH0794864A (en) * 1993-09-22 1995-04-07 Mitsubishi Plastics Ind Ltd Manufacture of metal base printed wiring board
JPH08139234A (en) * 1994-11-11 1996-05-31 Mitsubishi Electric Corp Semiconductor device
JP2000353772A (en) * 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd Thermally conductive resin composition structure and manufacture thereof and, thermal conductive board formed of the same and manufacture thereof
JP2002033558A (en) * 2000-07-18 2002-01-31 Matsushita Electric Ind Co Ltd Circuit board and its manufacturing method
JP2003152143A (en) * 2001-03-19 2003-05-23 Matsushita Electric Ind Co Ltd Method for manufacture of thermally conductive substrate
JP2002355835A (en) * 2001-03-30 2002-12-10 Matsushita Electric Ind Co Ltd Method for producing heat conductive substrate
JP2003198166A (en) * 2001-12-27 2003-07-11 Polymatech Co Ltd Cooling method of heat generating electronic component and thermal conductive sheet for use therein
JP4111187B2 (en) * 2004-11-30 2008-07-02 松下電器産業株式会社 Manufacturing method of component unit

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