JP2006156721A5 - - Google Patents
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- JP2006156721A5 JP2006156721A5 JP2004345365A JP2004345365A JP2006156721A5 JP 2006156721 A5 JP2006156721 A5 JP 2006156721A5 JP 2004345365 A JP2004345365 A JP 2004345365A JP 2004345365 A JP2004345365 A JP 2004345365A JP 2006156721 A5 JP2006156721 A5 JP 2006156721A5
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- 239000012212 insulator Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 239000011256 inorganic filler Substances 0.000 claims description 20
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 20
- 229920001187 thermosetting polymer Polymers 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000000463 material Substances 0.000 description 51
- 238000009413 insulation Methods 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive Effects 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Description
本発明は、各種電子機器に用い、動作時に発熱する電子部品を放熱板に装着して、電子部品から生ずる熱を放熱するとともに、電子部品と放熱板との絶縁性を確保した部品ユニットに関するものである。 The present invention relates to a component unit which is used in various electronic devices and which is mounted on a heat radiating plate with an electronic component that generates heat during operation to radiate heat generated from the electronic component and to ensure insulation between the electronic component and the heat radiating plate. It is.
近年、電子機器の高性能化、小型化の要求に従い、電子部品の高密度、高機能化が一層叫ばれている。そのため、電子部品の小型化、高機能化、また高密度実装により、電子部品の温度上昇が大きな問題となり、動作時に発熱する電子部品、すなわち、発熱部品の放熱を高める方法が重要となってきている。 In recent years, in accordance with demands for higher performance and smaller size of electronic devices, higher density and higher functionality of electronic components have been screamed. For this reason, electronic components are becoming increasingly problematic due to their downsizing, high functionality, and high-density mounting, and methods for increasing the heat dissipation of electronic components that generate heat during operation, that is, heat-generating components, have become important. Yes.
動作時に発熱する電子部品の放熱を高める技術として、電子部品の背面にアルミ製の放熱板を装着し、電子部品の背面から熱を拡散する方式が知られている。 As a technique for increasing the heat dissipation of an electronic component that generates heat during operation, a method is known in which a heat sink made of aluminum is attached to the back of the electronic component and heat is diffused from the back of the electronic component.
図１０は従来の放熱板に電子部品を装着した部品ユニットの斜視図である。図１０において、従来の構成では、電子部品１を絶縁シート２で被覆し、金属製の放熱板３に取り付けている。取り付けは、絶縁シート２で被覆された電子部品１をバネ４で押さえ、放熱板３に開けた取り付け用の孔にネジ５を挿入してネジ止めすることにより行う。 FIG. 10 is a perspective view of a component unit in which electronic components are mounted on a conventional heat sink. In FIG. 10, in the conventional configuration, the electronic component 1 is covered with an insulating sheet 2 and attached to a metal heat sink 3. Attachment is performed by holding the electronic component 1 covered with the insulating sheet 2 with a spring 4, inserting a screw 5 into an attachment hole formed in the heat radiating plate 3, and screwing it.
これにより、電子部品１は、金属製の放熱板３との間で、絶縁性を確保しつつ、放熱を行うことができる。 Thus, the electronic component 1 can radiate heat while securing insulation between the electronic component 1 and the metal heat radiating plate 3.
なお、この出願の発明に関連する先行技術文献情報としては、例えば、特許文献１や特許文献２が知られている。
上記従来の構成では、電子部品１を絶縁シート２で被覆して絶縁を行うので、電子部品１に対して、絶縁シート２の被覆位置がずれたり、絶縁距離が十分に取れなかったりして、高電圧のかかる回路において耐絶縁性が劣化するという問題点を有していた。 In the above conventional configuration, since the electronic component 1 is covered with the insulating sheet 2 for insulation, the covering position of the insulating sheet 2 is shifted with respect to the electronic component 1 or the insulation distance cannot be sufficiently obtained. In a circuit where high voltage is applied, the insulation resistance deteriorates.
本発明は上記問題点を解決するもので、放熱性を損なわずに、耐絶縁性を向上した部品ユニットを提供することを目的としている。 The present invention solves the above-described problems, and an object thereof is to provide a component unit with improved insulation resistance without impairing heat dissipation.
上記目的を達成するために本発明は、金属製の基板に絶縁体を積層して形成した放熱板と、この放熱板に装着した発熱部品と、前記放熱板と対向するように配置された回路基板とを備え、前記絶縁体は、無機フィラーを含有した絶縁樹脂であって、前記発熱部品は、前記放熱板の前記絶縁体に面接触させて装着するとともに、前記発熱部品の接続端子を回路基板に接続した構成である。 To accomplish the above object, a heat radiation plate which is formed by stacking an insulator metal substrate, a heat generating component mounted on the radiator plate, the heat radiating plate disposed opposite to the a circuit and a substrate, wherein the insulator is an insulating resin containing an inorganic filler, prior Symbol heat generating component, the addition to mounting by surface contact with the insulator of the heat radiating plate, the connection terminals of the heat generating component It is the structure connected to the circuit board.
上記構成により、発熱部品は放熱板の絶縁体に面接触させて装着するので、放熱板との接触面積が大きくなり、放熱性を損なわずに、絶縁性を向上することができる。基板に積層した絶縁体は、無機フィラーを含有した絶縁樹脂であって、無機フィラーの熱伝導率が絶縁樹脂の熱伝導率よりも大きいので、絶縁体に電子部品を装着すれば、放熱性を損なわずに、耐絶縁性を向上することができる。放熱性や絶縁性の必要度に応じて、基板に積層する絶縁体の面積を変えたり、無機フィラーの材質を選択したり、基板の材質を選択すれば、所望の特性を自由に得ることができる。 With the above configuration, since the heat generating component is mounted in surface contact with the insulator of the heat sink, the contact area with the heat sink increases, and the insulation can be improved without impairing heat dissipation. The insulator laminated on the substrate is an insulating resin containing an inorganic filler, and the thermal conductivity of the inorganic filler is larger than the thermal conductivity of the insulating resin. Insulation resistance can be improved without damage. Depending on the necessity of heat dissipation and insulation, the desired characteristics can be freely obtained by changing the area of the insulator laminated on the substrate, selecting the inorganic filler material, or selecting the substrate material. it can.
以下、実施の形態を用いて、本発明の全請求項に記載の発明について、図面を参照しながら説明する。 Hereinafter, the invention described in all claims of the present invention will be described using embodiments with reference to the drawings.
図１は本発明の放熱基板に電子部品を装着した部品ユニットの斜視図、図２は筐体に同部品ユニットを取り付けた際の取付状態を示す斜視図、図３は筐体に取り付けた同部品ユニットを回路基板に実装した際の実装状態を示す斜視図である。 FIG. 1 is a perspective view of a component unit in which electronic components are mounted on a heat dissipation board of the present invention, FIG. 2 is a perspective view showing an attachment state when the component unit is attached to a housing, and FIG. It is a perspective view which shows the mounting state at the time of mounting a component unit on a circuit board.
図１において、部品ユニットは、金属製の基板１２およびこれに積層した絶縁体１４からなる放熱板１０に、動作時に発熱する電子部品１６、すなわち発熱部品を装着して形成している。この際、複数の電子部品１６を一体化する、または、互いに近傍に配置し、放熱板１０の絶縁体１４に面接触させて装着して形成している。この動作時に発熱する電子部品１６としては、例えば、コイル部にコアを組み合わせた電源トランスや、ＦＥＴや、ダイオード等がある。電源トランスを放熱板１０に装着する場合は、電源トランスのコアを放熱板１０の絶縁体に面接触させると良い。 In FIG. 1, the component unit is formed by mounting an electronic component 16 that generates heat during operation, that is, a heat generating component, on a heat radiating plate 10 composed of a metal substrate 12 and an insulator 14 laminated thereon. At this time, the plurality of electronic components 16 are integrated or arranged in the vicinity of each other, and are mounted in surface contact with the insulator 14 of the heat sink 10. Examples of the electronic component 16 that generates heat during this operation include a power transformer in which a core is combined with a coil portion, an FET, and a diode. When the power transformer is mounted on the heat sink 10, the power transformer core may be brought into surface contact with the insulator of the heat sink 10.
また、図２に示すように、複数の電子部品１６を装着した放熱板１０は、機器の筐体１８やシャーシに、ネジ止めや接着等により取り付けている。さらに、図３に示すように、放熱板１０と対向するように回路基板２２を併設配置して、電子部品１６の接続端子２０を放熱板１０とは反対側の回路基板２２側に引き出すとともに、そのまま回路基板２２に接続して、放熱板１０に装着された複数の電子部品１６を回路基板２２に実装している。この回路基板２２には、放熱板１０に装着した電子部品１６を制御する制御回路等を形成している。 As shown in FIG. 2, the heat radiating plate 10 on which a plurality of electronic components 16 are mounted is attached to a casing 18 or chassis of the device by screwing or bonding. Further, as shown in FIG. 3, the circuit board 22 is disposed side by side so as to face the heat sink 10, and the connection terminal 20 of the electronic component 16 is drawn out to the circuit board 22 side opposite to the heat sink 10. The plurality of electronic components 16 mounted on the heat sink 10 are mounted on the circuit board 22 by being connected to the circuit board 22 as they are. On the circuit board 22, a control circuit for controlling the electronic component 16 mounted on the heat sink 10 is formed.
次に、上記の部品ユニットに用いる放熱板１０について説明する。 Next, the heat sink 10 used for said component unit is demonstrated.
放熱板１０の絶縁体１４は、無機フィラーを含有した絶縁樹脂からなるとともに、この無機フィラーの熱伝導率を絶縁樹脂の熱伝導率よりも大きくしたものである。 The insulator 14 of the heat radiating plate 10 is made of an insulating resin containing an inorganic filler, and the thermal conductivity of the inorganic filler is larger than the thermal conductivity of the insulating resin.
無機フィラーは、Ａｌ2Ｏ3、ＭｇＯ、ＳｉＯ2、ＢＮおよびＡｌＮから選ばれる少なくとも一つを含んでいる。無機フィラーを用いると、放熱性が優れるが、特に、ＭｇＯを用いると線膨張係数を大きくでき、ＳｉＯ2を用いると誘電率を小さくでき、ＢＮを用いると線膨張係数を小さくできる。 The inorganic filler contains at least one selected from Al 2 O 3 , MgO, SiO 2 , BN, and AlN. When an inorganic filler is used, heat dissipation is excellent. In particular, the use of MgO can increase the linear expansion coefficient, the use of SiO 2 can reduce the dielectric constant, and the use of BN can reduce the linear expansion coefficient.
無機フィラーは略球形状で、その直径は０．１〜１００μｍであるが、粒径が小さいほど絶縁樹脂への充填率を向上できる。絶縁体１４に占める無機フィラーの充填量は、熱伝導率を上げるために、７０〜９５重量％と高濃度に充填している。特に、本実施の形態では、無機フィラーは、平均粒径３μｍと平均粒径１２μｍの２種類のＡｌ2Ｏ3を混合したものを用いている。この大小２種類の粒径のＡｌ2Ｏ3を用いることによって、大きな粒径のＡｌ2Ｏ3の隙間に小さな粒径のＡｌ2Ｏ3を充填できるので、Ａｌ2Ｏ3を９０重量％近くまで高濃度に充填できるものである。この場合、絶縁体１４の熱伝導率は３Ｗ／ｍＫ程度となる。 The inorganic filler has a substantially spherical shape and a diameter of 0.1 to 100 μm. The smaller the particle size, the better the filling rate into the insulating resin. The filling amount of the inorganic filler in the insulator 14 is filled at a high concentration of 70 to 95% by weight in order to increase the thermal conductivity. In particular, in the present embodiment, the inorganic filler is a mixture of two types of Al 2 O 3 having an average particle diameter of 3 μm and an average particle diameter of 12 μm. By using the Al 2 O 3 of the large and small two types of particle size, it is possible to fill the Al 2 O 3 of small particle size in the gap Al 2 O 3 of large particle size, Al 2 O 3 90 wt% near Can be filled to a high concentration. In this case, the thermal conductivity of the insulator 14 is about 3 W / mK.
図４に示すように、混練物２４に占める無機フィラーの充填率を上げていくと熱伝導率も比例して増加していく。これが充填率７０重量％を超えると、熱伝導率は急激に増加することから、充填率は７０重量％以上とする。これは、ある充填率を超えると、充填される熱伝導性のよい無機フィラーの粒子間の距離が短くなり、混練物２４としての熱伝導率が急に高くなる領域が存在するからだと考えられる。本発明では、この領域を利用することで混練物２４の熱伝導率を高くすることができるというものである。 As shown in FIG. 4, as the filling rate of the inorganic filler in the kneaded material 24 is increased, the thermal conductivity also increases in proportion. If this exceeds 70% by weight, the thermal conductivity increases rapidly, so the filling rate is 70% by weight or more. This is considered to be because when the filling rate exceeds a certain filling rate, the distance between the particles of the inorganic filler to be filled becomes short, and there is a region where the heat conductivity as the kneaded material 24 suddenly increases. . In the present invention, the heat conductivity of the kneaded material 24 can be increased by utilizing this region.
また、無機フィラーの充填率をさらに上げていくと、熱伝導率は増加するが、９５重量％を超えると、混練物２４として形状を保持できなくなってしまうため、充填率は７０〜９５重量％とするものである。 Further, if the filling rate of the inorganic filler is further increased, the thermal conductivity increases, but if it exceeds 95% by weight, the shape cannot be maintained as the kneaded material 24, so the filling rate is 70 to 95% by weight. It is what.
熱硬化性の絶縁樹脂は、エポキシ樹脂、フェノール樹脂およびシアネート樹脂の内、少なくとも１種類の樹脂を含んでいる。これらの樹脂は耐熱性や電気絶縁性に優れている。 The thermosetting insulating resin contains at least one resin among epoxy resin, phenol resin, and cyanate resin. These resins are excellent in heat resistance and electrical insulation.
絶縁体１４の厚さは、薄くすれば、放熱板１０に装着した電子部品１６に生じる熱を基板１２に伝えやすいが、逆に絶縁耐圧が問題となり、厚すぎると、熱抵抗が大きくなるので、絶縁耐圧と熱抵抗を考慮して最適な厚さに設定すれば良い。強化絶縁耐圧を考慮すれば、絶縁体１４の厚さを０．４ｍｍより厚く、また、熱抵抗を考慮すれば、２ｍｍ以下にするのが望ましい。特に、本実施の形態では、絶縁体１４の厚さを０．６ｍｍとしている。 If the thickness of the insulator 14 is reduced, the heat generated in the electronic component 16 mounted on the heat sink 10 can be easily transferred to the substrate 12, but conversely, the withstand voltage becomes a problem, and if it is too thick, the thermal resistance increases. The optimum thickness may be set in consideration of withstand voltage and thermal resistance. Considering the reinforced dielectric strength, it is desirable that the thickness of the insulator 14 is greater than 0.4 mm, and considering the thermal resistance, it is preferably 2 mm or less. In particular, in the present embodiment, the thickness of the insulator 14 is 0.6 mm.
金属製の基板１２としては、熱伝導の良いアルミニウム、銅またはそれらを主成分とする合金からできている。特に、本実施の形態では、基板１２の厚みを１ｍｍとしている。また、基板１２としては、単なる板状のものだけでなく、より放熱性を高めるため、絶縁体１４を積層した面とは反対側の面に、表面積を広げるためにフィン部を形成しても良い。全膨張係数は８×１０-6／℃〜２０×１０-6／℃としており、基板１２や半導体部品等の電子部品１６の線膨張係数に近づけることにより、放熱板１０の反りや歪みを小さくできる。 The metal substrate 12 is made of aluminum, copper, or an alloy containing them as a main component, which has good thermal conductivity. In particular, in the present embodiment, the thickness of the substrate 12 is 1 mm. Further, the substrate 12 is not limited to a simple plate-like one, and a fin portion may be formed on the surface opposite to the surface on which the insulator 14 is laminated in order to increase the surface area in order to further improve heat dissipation. good. The total expansion coefficient is set to 8 × 10 −6 / ° C. to 20 × 10 −6 / ° C., and the warpage and distortion of the heat sink 10 are reduced by being close to the linear expansion coefficient of the electronic component 16 such as the substrate 12 or the semiconductor component. it can.
この放熱板１０の製造工程は次の通りである。 The manufacturing process of this heat sink 10 is as follows.
放熱板１０の製造工程では、無機フィラーと未硬化の熱硬化性の絶縁樹脂を混練して形成した混練物２４を金属製の基板１２に積層する積層工程と、未硬化の絶縁樹脂を硬化する硬化工程とを備えている。 In the manufacturing process of the heat sink 10, a laminating process for laminating a kneaded material 24 formed by kneading an inorganic filler and an uncured thermosetting insulating resin on the metal substrate 12, and curing the uncured insulating resin. A curing step.
具体的には、図５（Ａ）において、混練物２４をフィルム２６上に所定の厚みになるようにシート化して積層する。シート化することにより容易に混練物２４を放熱板１０の形状にすることができ、低コストで生産性を良くすることができる。 Specifically, in FIG. 5A, the kneaded material 24 is formed into a sheet and laminated on the film 26 so as to have a predetermined thickness. By making it into a sheet, the kneaded material 24 can be easily formed into the shape of the radiator plate 10, and the productivity can be improved at low cost.
混練物２４をシート化する方法としては、ドクターブレード法、コーター法、押し出し成形法、圧延法等がある。本実施の形態では、押し出し成形法にて、ポリエチレン−テレフタレート（ＰＥＴ）からなるフィルム２６上に混練物２４を積層している。混練物２４の厚さは、０．６ｍｍとしている。 As a method for forming the kneaded material 24 into a sheet, there are a doctor blade method, a coater method, an extrusion method, a rolling method, and the like. In the present embodiment, the kneaded material 24 is laminated on the film 26 made of polyethylene-terephthalate (PET) by an extrusion molding method. The thickness of the kneaded material 24 is 0.6 mm.
他の方法としては、ディスペンサー、モーノポンプ、または押し出し成形機等により、基板１２上に混練物２４を必要量塗布し、表面を平坦にするように、混練物２４をローラー２８で押圧して形成する方法でも良い。 As another method, a necessary amount of the kneaded material 24 is applied onto the substrate 12 by a dispenser, a mono pump, an extrusion molding machine, or the like, and the kneaded material 24 is pressed with a roller 28 so as to flatten the surface. The method is fine.
また、予め、混練物２４をシート化しておいて、基板１２に積層しても良い。 Alternatively, the kneaded material 24 may be formed into a sheet in advance and laminated on the substrate 12.
次に、図５（Ｂ）において、ローラー２８を用いて、フィルム２６上から混練物２４を基板１２に押し付けるように、フィルム２６の端から順に押圧し、基板１２に混練物２４を積層する（積層工程）。この際、基板１２と混練物２４との間には、空気を挟まないように押し付けている。特に、５００００Ｐａ以下の圧力の真空雰囲気中で行うと、基板１２と混練物２４との間に空気が噛みこんでボイドが発生するのを防ぐことができる。 Next, in FIG. 5B, the kneaded material 24 is pressed from the end of the film 26 in order to press the kneaded material 24 against the substrate 12 using the roller 28, and the kneaded material 24 is laminated on the substrate 12 ( Laminating process). At this time, the substrate 12 and the kneaded material 24 are pressed so as not to sandwich air. In particular, when performed in a vacuum atmosphere at a pressure of 50000 Pa or less, it is possible to prevent air from being caught between the substrate 12 and the kneaded material 24 and generating voids.
次に、図５（Ｃ）において、混練物２４からフィルム２６を剥離し、フィルム２６上に積層した混練物２４を基板１２に転写する。 Next, in FIG. 5C, the film 26 is peeled from the kneaded material 24, and the kneaded material 24 laminated on the film 26 is transferred to the substrate 12.
最後に、混練物２４に含まれる熱硬化性の絶縁樹脂を熱硬化させることにより（硬化工程）、未硬化の絶縁樹脂が硬化して絶縁体１４が形成され、放熱板１０を得ることができる。 Finally, by thermally curing the thermosetting insulating resin contained in the kneaded material 24 (curing step), the uncured insulating resin is cured to form the insulator 14, and the heat sink 10 can be obtained. .
この硬化工程では、フィルム２６を剥離した後、これに熱を加えて熱硬化性の絶縁樹脂を硬化させるが、加熱条件として熱硬化性の絶縁樹脂をＣステージまで硬化させるため、１５０℃から２００℃で１時間から６時間加熱する。本実施の形態では、１７０℃で３時間加熱した。 In this curing step, after the film 26 is peeled off, heat is applied to the film 26 to cure the thermosetting insulating resin. Heat at 0 ° C. for 1 to 6 hours. In this embodiment mode, heating is performed at 170 ° C. for 3 hours.
また、硬化工程において次のような加熱の仕方を行っても良い。基板１２上に混練物２４を積層し、熱硬化性の絶縁樹脂の硬化度合いがＢステージになるまで硬化させる。それを更に、Ｃステージまで硬化するように２段階で硬化させる。このＢステージの状態で、電子部品１６を装着するための位置決め用の位置決め穴を形成したり、不必要な混練物２４を除去したり、所望の形状になるように混練物２４を加工する。この状態で加熱してＣステージまで硬化させる。Ｂステージに硬化させる前でも、混練物２４を加工することができるが、この方法の方が形状変化の少ない放熱板１０を得易い。また、電子部品１６を混練物２４上に装着した後、加熱することもできる。この方法では、熱硬化性の絶縁樹脂が一度溶融するため接着剤を用いずに電子部品１６を固定することができる。 Moreover, you may perform the following heating methods in a hardening process. The kneaded material 24 is laminated on the substrate 12 and cured until the thermosetting insulating resin is cured to a B stage. It is further cured in two stages so as to cure to the C stage. In this B stage state, positioning holes for positioning for mounting the electronic component 16 are formed, unnecessary kneaded material 24 is removed, or the kneaded material 24 is processed into a desired shape. In this state, it is heated and cured to the C stage. The kneaded material 24 can be processed even before being cured to the B stage, but this method makes it easier to obtain the heat sink 10 with less shape change. Alternatively, the electronic component 16 can be heated after being mounted on the kneaded product 24. In this method, since the thermosetting insulating resin melts once, the electronic component 16 can be fixed without using an adhesive.
また、この硬化工程において、フィルム２６をつけたまま熱硬化性の絶縁樹脂を加熱してＢあるいはＣステージにしてからフィルム２６を除去してもよい。 Further, in this curing step, the film 26 may be removed after the thermosetting insulating resin is heated to the B or C stage with the film 26 attached.
次に、本発明の他の実施の形態における放熱板１０の製造工程について説明する。 Next, the manufacturing process of the heat sink 10 according to another embodiment of the present invention will be described.
この放熱板１０の製造工程は次の通りである。 The manufacturing process of this heat sink 10 is as follows.
図６（Ａ）、図６（Ｂ）において、基板１２に混練物２４を積層する積層工程は前述の本実施の形態の製造工程と同様であるが、混練物２４を完全にシート化せず、また、混練物２４の表面を完全に平坦にせずに、次の工程で許容できる状態にしておいてもよい。 6A and 6B, the laminating process for laminating the kneaded material 24 on the substrate 12 is the same as the manufacturing process of the above-described embodiment, but the kneaded material 24 is not completely formed into a sheet. Further, the surface of the kneaded material 24 may be allowed to be acceptable in the next step without being completely flattened.
図６（Ｃ）において、基板１２に積層した混練物２４は、熱盤３０で挟んで加圧と加熱を行い、未硬化の熱硬化性の絶縁樹脂を硬化する。 In FIG. 6C, the kneaded material 24 laminated on the substrate 12 is pressed and heated by being sandwiched by a hot platen 30 to cure the uncured thermosetting insulating resin.
図６（Ｄ）において、熱盤３０をはずせば、混練物２４は絶縁体１４として形成される。 In FIG. 6D, if the heating platen 30 is removed, the kneaded material 24 is formed as the insulator 14.
この方法では加圧により混練物２４の厚みは薄くなるため、熱盤３０に挟み込む前の混練物２４の厚さは、熱盤３０で挟み込んだ後の欲しい厚さに対して、予め厚くしておく必要がある。本工程では、最終的な基板１２に形成される絶縁体１４の厚みを０．６ｍｍにするため、基板１２に積層した時点の混練物２４の厚みを１ｍｍにしている。 In this method, since the thickness of the kneaded material 24 is reduced by pressurization, the thickness of the kneaded material 24 before being sandwiched by the hot platen 30 is previously increased with respect to the desired thickness after being sandwiched by the hot platen 30. It is necessary to keep. In this step, in order to set the thickness of the insulator 14 formed on the final substrate 12 to 0.6 mm, the thickness of the kneaded material 24 when it is laminated on the substrate 12 is set to 1 mm.
また、この硬化工程では、混練物２４と熱盤３０との間に混練物２４と金型とを離型し易くするために、混練物２４の表面に耐熱性のあるＰＥＴからなるフィルム２６を付けた状態で、熱盤３０に挟み込んでもよい。これにより、混練物２４が熱盤３０に付着することを防ぐことができる。 In this curing step, a film 26 made of heat-resistant PET is formed on the surface of the kneaded material 24 so that the kneaded material 24 and the mold are easily released between the kneaded material 24 and the hot platen 30. It may be sandwiched between the hot plates 30 in the attached state. Thereby, the kneaded material 24 can be prevented from adhering to the hot platen 30.
熱盤３０で挟み込んだ後は、フィルム２６を剥離する。 After being sandwiched by the hot platen 30, the film 26 is peeled off.
さらに、本発明の他の実施の形態における放熱板１０の製造工程について説明する。 Furthermore, the manufacturing process of the heat sink 10 in other embodiment of this invention is demonstrated.
図７（Ａ）、図７（Ｂ）において、基板１２に混練物２４を積層する積層工程は前述の本実施の形態の製造工程と同様であるが、混練物２４を完全にシート化せず、また、混練物２４の表面を完全に平坦にせずに、次の工程で許容できる状態にしておいてもよい。 7A and 7B, the laminating process for laminating the kneaded product 24 on the substrate 12 is the same as the manufacturing process of the present embodiment described above, but the kneaded product 24 is not completely formed into a sheet. Further, the surface of the kneaded material 24 may be allowed to be acceptable in the next step without being completely flattened.
図７（Ｃ）において、混練物２４を積層した基板１２を上金型３２と下金型３４内に設置する。 In FIG. 7C, the substrate 12 on which the kneaded material 24 is laminated is placed in an upper mold 32 and a lower mold 34.
上金型３２には混練物２４を所定の形状に成形するための凹凸が設けられている。 The upper mold 32 is provided with irregularities for forming the kneaded material 24 into a predetermined shape.
図７（Ｄ）において、上金型３２と下金型３４を閉じて混練物２４を加圧・加熱して成形を行う。 In FIG. 7D, the upper mold 32 and the lower mold 34 are closed and the kneaded material 24 is pressurized and heated to perform molding.
この時、上金型３２と下金型３４は、１５０℃程度に昇温されており、混練物２４を加熱してＢあるいはＣステージにする。この場合、加熱時間が５分程度と短い場合はＢステージであるが、それ以上の時間ではＣステージになる。 At this time, the upper mold 32 and the lower mold 34 are heated to about 150 ° C., and the kneaded material 24 is heated to the B or C stage. In this case, when the heating time is as short as about 5 minutes, the B stage is used, but when the heating time is longer than that, the C stage is used.
図７（Ｅ）において、加圧・加熱を経て、混練物２４は絶縁体１４として形成される。 In FIG. 7E, the kneaded material 24 is formed as an insulator 14 through pressurization and heating.
この放熱板１０の絶縁体１４には、凹部３６が形成されるので、図８に示すように、この凹部３６に電子部品１６を装着すれば装着が容易となる。 Since the recess 14 is formed in the insulator 14 of the heat sink 10, as shown in FIG. 8, mounting the electronic component 16 in the recess 36 facilitates mounting.
この電子部品１６の装着方法としては、例えば、Ｃステージまで硬化させた状態で、接着剤で装着する方法があるが、次のような装着方法でもよい。 As a method for mounting the electronic component 16, for example, there is a method of mounting with an adhesive in a state of being cured to the C stage, but the following mounting method may be used.
Ｂステージの状態で電子部品１６を凹部３６に置いて１５０℃前後で加熱し、熱硬化性の絶縁樹脂が一度溶融して電子部品１６と混練物２４とを熱硬化性の絶縁樹脂で接着してから、Ｃステージまで硬化させてもよい。これによると、熱硬化性の絶縁樹脂がある程度の硬度を有することになり、電子部品１６が自重で混練物２４に沈み込むことを防げる。より接着力を上げる場合には、電子部品１６を混練物２４に加圧しながら加熱すると良い。 In the state of B stage, the electronic component 16 is placed in the recess 36 and heated at around 150 ° C., the thermosetting insulating resin is once melted, and the electronic component 16 and the kneaded material 24 are bonded with the thermosetting insulating resin. Then, it may be cured up to the C stage. According to this, the thermosetting insulating resin has a certain degree of hardness, and the electronic component 16 can be prevented from sinking into the kneaded material 24 by its own weight. In order to further increase the adhesive force, the electronic component 16 may be heated while being pressed against the kneaded material 24.
このように本実施の形態では、発熱部品は放熱板１０の絶縁体１４に面接触させて装着するので、放熱板１０との接触面積が大きくなり、放熱性を損なわずに、絶縁性を向上することができる。放熱性や絶縁性の必要度に応じて、基板１２に積層する絶縁体１４の面積を変えたり、基板１２の材質を選択したりすれば、所望の特性を自由に得ることができる。特に、発熱部品は、その外形の一部を放熱板１０の絶縁体１４に面接触させ、発熱部品の接続端子２０で回路基板２２に実装しているので、非常に簡素な組み合わせで、部品ユニットを形成できる。 As described above, in the present embodiment, since the heat-generating component is mounted in surface contact with the insulator 14 of the heat sink 10, the contact area with the heat sink 10 is increased, and the insulation is improved without impairing heat dissipation. can do. If the area of the insulator 14 laminated on the substrate 12 is changed or the material of the substrate 12 is selected according to the necessity of heat dissipation or insulation, desired characteristics can be freely obtained. In particular, the heat generating component has a part of its outer surface brought into surface contact with the insulator 14 of the heat sink 10 and is mounted on the circuit board 22 with the connection terminal 20 of the heat generating component. Can be formed.
また、放熱板１０には、電源部における発熱部品を集約しているので、この放熱板１０を機器の筐体１８やシャーシの金属体に接触させるだけで、簡単で、より効率良く放熱することができる。さらに、発熱部品間における配線を短くすることもでき、配線長に起因するインピーダンスを低減して、ノイズの低減を図ることもできる。 In addition, since the heat generating parts in the power supply unit are gathered in the heat radiating plate 10, it is possible to radiate heat more easily and simply by bringing the heat radiating plate 10 into contact with the casing 18 of the device or the metal body of the chassis. Can do. Furthermore, the wiring between the heat-generating components can be shortened, and the impedance due to the wiring length can be reduced to reduce noise.
なお、本発明の実施の形態では、基板１２の一方の面にしか絶縁樹脂を積層せず、基板１２の一方の面にのみ絶縁体１４を形成したが、基板１２の他方の面にも絶縁樹脂を積層して絶縁体１４を形成したり、基板１２の端面にも絶縁樹脂を塗布し基板１２を絶縁樹脂で被覆して絶縁体１４を形成したりしてもよい。これによると、絶縁体１４は基板１２の主平面の両側に形成されるので、両側に電子部品１６を装着でき、機器の小型化を行うことができる。また、基板１２の端面にも絶縁体１４を形成すれば、より絶縁を確保できるため、絶縁距離を短くでき機器の小型化を行うことができる。 In the embodiment of the present invention, the insulating resin is laminated only on one surface of the substrate 12 and the insulator 14 is formed only on one surface of the substrate 12, but the other surface of the substrate 12 is also insulated. The insulator 14 may be formed by laminating a resin, or the insulator 14 may be applied to the end surface of the substrate 12 and the substrate 12 may be covered with the insulating resin to form the insulator 14. According to this, since the insulator 14 is formed on both sides of the main plane of the substrate 12, the electronic component 16 can be mounted on both sides, and the device can be downsized. Further, if the insulator 14 is also formed on the end face of the substrate 12, insulation can be further ensured, so that the insulation distance can be shortened and the device can be downsized.
さらに、図９に示すように、基板１２に積層する絶縁体１４は、基板１２の一部に形成しても、全面に形成しても良く、また、電子部品１６に要求される絶縁耐圧によって、電子部品１６が装着される部分のみに絶縁体１４を積層したり、電子部品１６の装着される部分のみに絶縁体１４を積層せずに、その周囲に積層したりしても良い。 Furthermore, as shown in FIG. 9, the insulator 14 laminated on the substrate 12 may be formed on a part of the substrate 12 or on the entire surface, and depending on the withstand voltage required for the electronic component 16. Alternatively, the insulator 14 may be stacked only on a portion where the electronic component 16 is mounted, or may be stacked around the insulator 14 instead of only on a portion where the electronic component 16 is mounted.
絶縁体１４の積層面積に応じて、絶縁樹脂の使用量を減らすこともでき、コストダウンも行える。また、絶縁体１４を積層していない部分では（金属製の基板１２が露出する部分では）、放熱板１０を各種の機器の筐体１８に取り付けるためのネジ等を取り付けることができ、絶縁体１４にクラック等も発生させずに取り付けることもできる。 Depending on the laminated area of the insulator 14, the amount of insulating resin used can be reduced, and the cost can be reduced. Further, in a portion where the insulator 14 is not laminated (in a portion where the metal substrate 12 is exposed), a screw or the like for attaching the heat radiating plate 10 to the casing 18 of various devices can be attached. It can also be attached to 14 without causing cracks or the like.
以上のように本発明の部品ユニットは、放熱と絶縁の必要な電子部品を装着し、放熱性と絶縁性を向上させることができるので、各種の電子機器に用いることができる。 As described above, the component unit of the present invention can be used in various electronic devices because it can be mounted with electronic components that require heat dissipation and insulation to improve heat dissipation and insulation.
１０ 放熱板
１２ 基板
１４ 絶縁体
１６ 電子部品
１８ 筐体
２０ 接続端子
２２ 回路基板
２４ 混練物
２６ フィルム
２８ ローラー
３０ 熱盤
３２ 上金型
３４ 下金型
３６ 凹部
DESCRIPTION OF SYMBOLS 10 Heat sink 12 Board | substrate 14 Insulator 16 Electronic component 18 Case 20 Connection terminal 22 Circuit board 24 Kneaded material 26 Film 28 Roller 30 Heating board 32 Upper die 34 Lower die 36 Recessed part
Claims (12)
前記絶縁体は、無機フィラーを含有した絶縁樹脂であって、
前記発熱部品は、前記絶縁体に面接触させて装着するとともに、
前記発熱部品の接続端子を前記回路基板に接続した部品ユニット。 Comprising a heat sink to the metallic substrate is formed by laminating the insulator, and a heat generating component mounted on the radiator plate, and arranged circuit board so as to face the heat radiating plate,
The insulator is an insulating resin containing an inorganic filler ,
Before SL heat generating component is adapted to mounted surface contact is allowed to the insulator,
A component unit in which connection terminals of the heat generating components are connected to the circuit board.
０．４ｍｍより厚く２ｍｍ以下である請求項１から３のいずれか一つに記載の部品ユニット。The component unit according to any one of claims 1 to 3, wherein the component unit is thicker than 0.4 mm and 2 mm or less.
前記絶縁体の絶縁樹脂によって接着されている請求項１から４のいずれか一つに記載の部品ユニット。The component unit according to any one of claims 1 to 4, wherein the component unit is bonded by an insulating resin of the insulator.
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| JP4581656B2 (en) * | 2004-11-30 | 2010-11-17 | パナソニック株式会社 | Manufacturing method of heat sink |
| JP4581655B2 (en) * | 2004-11-30 | 2010-11-17 | パナソニック株式会社 | Heat sink |
| KR101153995B1 (en) | 2011-05-25 | 2012-06-07 | 주식회사 이지트로닉스 | Power converter |
| JP2013229366A (en) * | 2012-04-24 | 2013-11-07 | Meidensha Corp | Fixing structure of electronic component |
| JP5963732B2 (en) | 2013-10-31 | 2016-08-03 | インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ | Method for setting surface area of radiator installation on back surface of wiring part of chip support substrate, chip support substrate, and chip mounting structure |
| JP7351102B2 (en) | 2019-05-09 | 2023-09-27 | 富士電機株式会社 | Manufacturing method of semiconductor device |
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| JPH0685502U (en) * | 1993-05-21 | 1994-12-06 | オリジン電気株式会社 | High frequency device using molded semiconductor device |
| JP3189590B2 (en) * | 1994-09-20 | 2001-07-16 | 東海ゴム工業株式会社 | Heat dissipation sheet and its manufacturing method |
| JP4077963B2 (en) * | 1998-11-04 | 2008-04-23 | 日東電工株式会社 | Heat dissipation sheet |
| JP2001274578A (en) * | 2000-03-27 | 2001-10-05 | Daikin Ind Ltd | Heat radiation mechanism of electric element |
| JP2002138205A (en) * | 2000-11-02 | 2002-05-14 | Polymatech Co Ltd | Thermal conductive molded article |
| JP4268778B2 (en) * | 2001-12-27 | 2009-05-27 | ポリマテック株式会社 | Heating electronic component cooling method and heat conductive sheet used therefor |
| JP2004104115A (en) * | 2002-08-21 | 2004-04-02 | Matsushita Electric Ind Co Ltd | Power module and its manufacturing method |
| JP4023257B2 (en) * | 2002-08-29 | 2007-12-19 | 松下電器産業株式会社 | Manufacturing method of heat dissipation substrate |
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