JP4571089B2 - Substrate support member, substrate baking furnace, substrate transfer apparatus, and substrate processing method - Google Patents

Substrate support member, substrate baking furnace, substrate transfer apparatus, and substrate processing method Download PDF

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JP4571089B2
JP4571089B2 JP2006088008A JP2006088008A JP4571089B2 JP 4571089 B2 JP4571089 B2 JP 4571089B2 JP 2006088008 A JP2006088008 A JP 2006088008A JP 2006088008 A JP2006088008 A JP 2006088008A JP 4571089 B2 JP4571089 B2 JP 4571089B2
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substrate
support member
furnace
substrate support
top plate
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JP2007266221A (en
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祐介 村岡
恭祥 宮路
靖 長嶋
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Koyo Thermo Systems Co Ltd
Future Vision Inc
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Future Vision Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Description

この発明は、半導体基板、液晶表示装置用ガラス基板、フォトマスク用ガラス基板、プラズマ表示用ガラス基板、光ディスク用基板等（以下、単に「基板」という）を支持するための基板支持部材に関する。また、当該基板支持部材を用いて構成される基板焼成炉や基板搬送装置に関する。さらに、当該基板焼成炉および当該基板搬送装置を用いて基板を焼成する方法に関する。   The present invention relates to a substrate support member for supporting a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a glass substrate for plasma display, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”). In addition, the present invention relates to a substrate baking furnace and a substrate transfer apparatus configured using the substrate support member. Furthermore, the present invention relates to a method for baking a substrate using the substrate baking furnace and the substrate transfer apparatus.

一般に、基板に対する一連の処理を行う基板処理装置は、所定位置に配置された各種の単位処理部（例えば、焼成処理部、洗浄処理部、レジスト塗布部、現像部等）から構成されている。基板は、基板搬送装置によって、所定の搬送順序で各単位処理部に搬出入されながら一連の処理が行われることになる。   In general, a substrate processing apparatus that performs a series of processes on a substrate includes various unit processing units (for example, a baking processing unit, a cleaning processing unit, a resist coating unit, and a developing unit) arranged at predetermined positions. The substrate is subjected to a series of processes while being transferred into and out of each unit processing unit in a predetermined transfer order by the substrate transfer apparatus.

ところで、このような基板処理装置において基板に対する一連の処理を行う際の様々な場面で、基板等を片持ち状態で支持する（すなわち、基端部が固定された支持部材の先端部で基板等を支持する）支持部材が採用されている。   By the way, in various situations when performing a series of processing on the substrate in such a substrate processing apparatus, the substrate or the like is supported in a cantilever state (that is, the substrate or the like at the distal end portion of the support member to which the base end portion is fixed). Support member is employed.

例えば、基板搬送装置おいて、基板を各処理部に搬出入する際に基板を支持する搬送フォークは片持ち状態で基板を支持するものである場合が多く、また例えば、各処理部においても、処理を受ける基板や基板に対して薬液等を供給するノズル等が片持ち状態で支持される構成が採用される場合も少なくなかった。   For example, in a substrate transfer device, a transfer fork that supports a substrate when loading and unloading the substrate into and from each processing unit often supports the substrate in a cantilever state, and for example, in each processing unit, In many cases, a configuration in which a substrate to be processed and a nozzle for supplying a chemical solution to the substrate are supported in a cantilever state is employed.

このように基板等を片持ち状態で支持する支持部材においては、従来より撓みの発生が問題となっていた。   Thus, in the support member which supports a board | substrate etc. in a cantilever state, generation | occurrence | production of bending has been a problem conventionally.

例えば、基板搬送装置の搬送フォークが撓むことによって搬送フォークが基板を水平状態で支持することができなくなってしまう。このため、基板を多段状態で格納する処理部やカセット等における収納棚の間隔を搬送フォークの撓みを考慮して（すなわち、撓んだ搬送フォークが挿入可能なように）大きくとらなければならなくなり、基板処理装置の大型化を招いていた。   For example, when the transport fork of the substrate transport apparatus is bent, the transport fork cannot support the substrate in a horizontal state. For this reason, the interval between the storage shelves in the processing units and cassettes that store the substrates in a multi-stage state must be increased in consideration of the bending of the transfer fork (that is, the bent transfer fork can be inserted). The size of the substrate processing apparatus has been increased.

また当然、搬出入先の処理部において、基板を片持ち状態で支持する支持部材によって基板が多段状態で格納されている場合は、処理部内の支持部材にも撓みが生じる。したがってこの場合、処理部内で基板を支持する支持部材自身の撓みと搬送装置の搬送フォークの撓みとの両方の撓みを考慮しなければならず、支持部材間の間隔は一層大きくとらなければならなかった。   Naturally, when the substrate is stored in a multistage state by the support member that supports the substrate in a cantilever state in the processing unit at the loading / unloading destination, the support member in the processing unit also bends. Therefore, in this case, both the bending of the support member itself supporting the substrate in the processing unit and the bending of the transfer fork of the transfer device must be taken into account, and the interval between the support members must be further increased. It was.

支持すべき基板の大型化およびこれに伴う基板の重量増加および支持部材の全長増加によって、撓みの発生が顕著なものとなっている近年においては、これらの問題は一層深刻なものとなっていた。   These problems have become more serious in recent years when the occurrence of bending has become remarkable due to the increase in the size of the substrate to be supported and the accompanying increase in the weight of the substrate and the increase in the overall length of the support member. .

ところで、支持部材の撓みの要因としては次のものが考えられる。第１の要因は自重である。第２の要因は温度上昇による剛性低下である。また第３の要因は載置されるガラス基板の重みである。ここで、基板焼成炉内の支持部材や、基板焼成炉に対して基板の搬出入を行う基板搬送装置の搬送フォークのように高温下にさらされる支持部材においては、第２の要因が大きく影響するために特に顕著な撓みが発生してしまっていた。その結果、焼成炉の大型化が特に深刻な問題となっていた。   By the way, the following can be considered as a cause of the bending of the support member. The first factor is its own weight. The second factor is a decrease in rigidity due to a temperature rise. The third factor is the weight of the glass substrate to be placed. Here, the second factor has a great influence on a support member exposed to a high temperature such as a support member in a substrate baking furnace or a transfer fork of a substrate transfer apparatus that carries a substrate in and out of the substrate baking furnace. In particular, a remarkable deflection has occurred. As a result, increasing the size of the firing furnace has been a particularly serious problem.

そこで、この問題を解決すべく、支持部材の撓みを抑制するための各種の技術が考案されている。例えば、支持部材の厚みを大きくすることによって支持部材の剛性を高め、撓みの発生を抑制する方法が考えられている。また、基板支持部材の内部に形状記憶合金ワイヤーを配置し、ワイヤーを収縮させることによって支持部材の剛性を高め、これによって撓みの発生を抑制する技術も考案されている（特許文献１参照）。   In order to solve this problem, various techniques for suppressing the bending of the support member have been devised. For example, a method of increasing the rigidity of the support member by increasing the thickness of the support member and suppressing the occurrence of bending has been considered. In addition, a technique has been devised in which a shape memory alloy wire is disposed inside a substrate support member and the rigidity of the support member is increased by contracting the wire, thereby suppressing the occurrence of bending (see Patent Document 1).

特開２００３−２７３１９２号公報JP 2003-273192 A

上記の各技術によると、確かに支持部材の撓みを抑制することが可能ではある。   According to each technique described above, it is possible to suppress the bending of the support member.

しかしながら、前者の支持部材の厚みを大きくする構成では、撓みは抑制されるものの、結局支持部材自体が厚くなるために処理装置の大型化は避けられなかった。また、後者の基板支持部材内部にワイヤーを備える構成では、支持部材の構成が複雑になるとともに、支持部材にかかる負荷や支持部材の使用状況に応じてワイヤーの張力を制御する手段が必要であった。   However, in the former configuration in which the thickness of the support member is increased, the bending is suppressed, but the support member itself becomes thick after all, so that an increase in the size of the processing apparatus cannot be avoided. Further, in the latter configuration in which the wire is provided inside the substrate support member, the configuration of the support member becomes complicated, and a means for controlling the tension of the wire according to the load applied to the support member and the usage status of the support member is necessary. It was.

また、従来の技術においては、高温化にさらされる支持部材のように特に顕著な撓みが発生する支持部材についてその撓みを十分に防止することはできなかった。   Further, in the prior art, it has not been possible to sufficiently prevent the bending of a supporting member that generates particularly remarkable bending, such as a supporting member that is exposed to high temperatures.

この発明は、上記課題に鑑みてなされたもので、焼成処理温度のような高温下にさらされた場合であっても、撓みが生じにくい基板支持部材を提供することを目的としている。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate support member that is less likely to be bent even when exposed to a high temperature such as a firing temperature.

請求項１の発明は、片持ち状態で基板を支持する基板支持部材であって、前記基板支持部材が、互いに線膨張率の異なる材質によって形成される複数種類の部材を接合して一体化したものであり、前記複数種類の部材が、線膨張率が小さい順に上から配置される。 The invention of claim 1 is a substrate support member that supports a substrate in a cantilever state, and the substrate support member is formed by joining and integrating a plurality of types of members formed of materials having different linear expansion coefficients. Monodea is, the plurality of types of members, Ru are arranged in order from the top linear expansion coefficient is small.

請求項２の発明は、請求項１に記載の基板支持部材であって、前記基板支持部材が、第１の部材と、前記第１の部材よりも線膨張率の大きい材質によって形成された第２の部材とを接合して一体化したものであり、前記基板支持部材の基端部が固定された状態において、前記第１の部材が前記第２の部材よりも上方に位置する。   A second aspect of the present invention is the substrate support member according to the first aspect, wherein the substrate support member is formed of a first member and a material having a larger linear expansion coefficient than the first member. The first member is positioned above the second member when the base end portion of the substrate support member is fixed.

請求項３の発明は、請求項２に記載の基板支持部材であって、前記第１の部材を形成する材質がＳＵＳ４３０であり、前記第２の部材を形成する材質がＳＵＳ３０４である。   According to a third aspect of the present invention, in the substrate support member according to the second aspect, the material forming the first member is SUS430, and the material forming the second member is SUS304.

請求項４の発明は、請求項２または３に記載の基板支持部材であって、前記第１の部材として設けられ、基板の下面を支持する長尺の天板部材と、前記第２の部材として設けられ、前記天板部材の下方に前記天板部材の長手方向に沿って配列された一対の長尺の壁部材と、が接合されることにより、前記基板支持部材が略逆Ｕ字状の断面を持つ形状体として形成されている。   Invention of Claim 4 is a board | substrate support member of Claim 2 or 3, Comprising: The elongate top plate member provided as said 1st member and supporting the lower surface of a board | substrate, and said 2nd member And a pair of long wall members arranged along the longitudinal direction of the top plate member are joined to each other below the top plate member so that the substrate support member has a substantially inverted U shape. It is formed as a shape body having a cross section.

請求項５の発明は、請求項２または３に記載の基板支持部材であって、前記第１の部材として設けられ、基板の下面側を支持する長尺の天板部材と、前記第２の部材として設けられ、前記天板部材の下方に前記天板部材の長手方向に沿って配置されるとともに略Ｕ字状の断面を持つ長尺部材と、が接合されることにより、前記基板支持部材が角型管状の形状体として形成されている。
請求項６の発明は、請求項１から５のいずれかに記載の基板支持部材であって、基板の焼成処理温度下において、自身の変形によって撓みを相殺することを特徴とする。 A fifth aspect of the present invention is the substrate support member according to the second or third aspect, wherein the long top plate member is provided as the first member and supports the lower surface side of the substrate, and the second The substrate support member is formed by joining a long member having a substantially U-shaped cross-section while being disposed along the longitudinal direction of the top plate member below the top plate member. Is formed as a rectangular tubular shape.
A sixth aspect of the present invention is the substrate support member according to any one of the first to fifth aspects, wherein the bending is canceled by the deformation of the substrate supporting member at a substrate baking temperature.

請求項７の発明は、基板に対する焼成処理を行う基板焼成炉であって、複数の基板を複数段状態で格納する基板格納部と、前記基板格納部の内部空間に熱を供給して所定の基板焼成温度にする熱供給部と、前記基板格納部の内背面に固定配置され、前記内部空間において基板を片持ち状態で支持する炉内支持部材と、を備え、前記炉内支持部材が、請求項１から６のいずれかに記載の基板支持部材である。 The invention according to claim 7 is a substrate baking furnace for performing a baking process on a substrate, wherein a plurality of substrates are stored in a plurality of stages , and heat is supplied to an internal space of the substrate storage unit to obtain a predetermined A heat supply unit configured to be a substrate baking temperature; and an in-furnace support member that is fixedly disposed on the inner back surface of the substrate storage unit and supports the substrate in a cantilever state in the internal space, the in-furnace support member, A substrate support member according to any one of claims 1 to 6 .

請求項８の発明は、基板焼成炉に対する基板の搬出入を行う基板搬送装置であって、基板を片持ち状態で支持する搬送フォークと、前記搬送フォークを駆動して前記基板焼成炉にアクセスさせる搬送フォーク駆動部と、を備え、前記搬送フォークが、請求項１から６のいずれかに記載の基板支持部材である。 The invention according to claim 8 is a substrate transfer apparatus for carrying a substrate in and out of the substrate baking furnace, wherein the transfer fork that supports the substrate in a cantilever state, and the transfer fork is driven to access the substrate baking furnace. and a conveying fork drive unit, the transport fork, a substrate support member according to any one of claims 1 to 6.

請求項９の発明は、請求項７に記載の基板焼成炉および請求項８に記載の基板搬送装置を用いて基板を焼成する基板処理方法において、前記基板格納部の内部空間の温度を、焼成処理温度まで昇温する炉内予備昇温工程と、前記搬送フォークの温度を、焼成処理温度まで昇温する搬送フォーク予備昇温工程と、前記基板搬送装置によって前記基板焼成炉に対する基板の搬出入を行うとともに、前記基板焼成炉において基板の焼成処理を行う基板焼成処理工程と、を備える。 The invention of claim 9, the substrate processing method of firing the substrate by using a substrate transfer apparatus according to the substrate firing furnace and claims 8 according to claim 7, the temperature of the inner space of the substrate storage unit, firing In-furnace preliminary temperature raising step for raising the temperature to the processing temperature, a conveyance fork preliminary temperature raising step for raising the temperature of the transfer fork to the baking treatment temperature, and carrying the substrate in and out of the substrate baking furnace by the substrate transfer device And a substrate firing process step of firing the substrate in the substrate firing furnace.

請求項１０の発明は、請求項９に記載の基板処理方法において、前記搬送フォーク予備昇温工程が、前記基板搬送装置に、前記基板焼成炉に対する基板の搬出入動作を、基板を保持しない状態で行わせるダミー動作工程、を備える。 A tenth aspect of the present invention is the substrate processing method according to the ninth aspect , wherein the transport fork preliminary temperature raising step is a state in which the substrate transport apparatus is in a state where the substrate is not loaded or unloaded into the substrate firing furnace. A dummy operation process to be performed in

請求項１〜６に記載の発明では、基板支持部材を、互いに線膨張率の異なる複数種類の部材を接合して一体化しているので、焼成処理温度のような高温下にさらされた場合に、線膨張率の違いに起因して生じる力を利用して撓みを相殺させることができる。すなわち、基板支持部材における撓みの発生を抑制することができる。 In the inventions according to claims 1 to 6 , since the substrate support member is integrated by joining a plurality of types of members having different linear expansion coefficients, when exposed to a high temperature such as a firing temperature. The deflection caused by the difference in linear expansion coefficient can be used to cancel the deflection. That is, the occurrence of bending in the substrate support member can be suppressed.

特に、請求項２に記載の発明では、基板支持部材の基端部が固定された状態において、上方に位置する部材が下方に位置する部材に比べて線膨張率が小さいので、焼成処理温度のような高温下にさらされた場合に、線膨張率の違いに起因して生じる力を鉛直上向きに生じさせることができる。これによって、自重による撓みと剛性低下による撓みとを相殺させることができる。すなわち、自重と剛性低下に起因する撓みの発生を低減することができる。   In particular, in the invention according to claim 2, in the state where the base end portion of the substrate support member is fixed, the member located above is smaller in linear expansion coefficient than the member located below. When exposed to such a high temperature, a force generated due to a difference in linear expansion coefficient can be generated vertically upward. Thereby, the bending due to its own weight and the bending due to the decrease in rigidity can be offset. That is, it is possible to reduce the occurrence of bending due to its own weight and rigidity reduction.

特に、請求項３に記載の発明では、基板支持部材が、ＳＵＳ３０４と、ＳＵＳ３０４よりも相対的に線膨張率が小さいＳＵＳ４３０とを用いて形成されている。これによって、焼成処理温度下にさらされた基板支持部材における撓みの発生を適正に防止することができる。   In particular, in the invention described in claim 3, the substrate support member is formed using SUS304 and SUS430 having a relatively smaller linear expansion coefficient than SUS304. As a result, it is possible to appropriately prevent the occurrence of bending in the substrate support member exposed to the firing temperature.

請求項７に記載の発明では、炉内支持部材が、請求項１から６のいずれかに記載の基板支持部材であるので、焼成処理温度のような高温下においても炉内支持部材における撓みの発生を抑制することができる。すなわち、撓みが抑制される分、炉内支持部材の鉛直方向についての配置間隔を小さくすることができる。これによって、基板焼成炉の小型化が可能となる。また、処理効率を上げることも可能となる。さらに、製造時や輸送時の最大寸法の制限を受けないため炉を分割する必要がなく、基板焼成炉の密閉化が容易になるという効果も得れられる。 In the invention according to claim 7 , since the in-furnace support member is the substrate support member according to any one of claims 1 to 6 , the in-furnace support member is bent even at a high temperature such as a firing temperature. Occurrence can be suppressed. That is, the arrangement | positioning space | interval about the vertical direction of a support member in a furnace can be made small by the part which a bending | flexion is suppressed. This makes it possible to reduce the size of the substrate baking furnace. In addition, the processing efficiency can be increased. Furthermore, since there is no restriction on the maximum dimensions during manufacturing and transportation, there is no need to divide the furnace, and the effect of facilitating the sealing of the substrate baking furnace can be obtained.

請求項８に記載の発明では、搬送フォークが、請求項１から６のいずれかに記載の基板支持部材であるので、焼成処理温度のような高温下においても基板支持部材における撓みの発生を抑制することができる。すなわち、搬送フォークの撓みが抑制される分、当該搬送フォークによって基板の搬出入を行う基板焼成炉において、炉内支持部材の鉛直方向についての配置間隔を小さくすることができる。 In the invention according to claim 8 , since the transport fork is the substrate support member according to any one of claims 1 to 6 , the occurrence of bending in the substrate support member is suppressed even under a high temperature such as a firing temperature. can do. That is, in the substrate baking furnace in which the substrate is carried in and out by the conveyance fork, the arrangement interval in the vertical direction of the in-furnace support member can be reduced by the amount that the bending of the conveyance fork is suppressed.

請求項９，１０に記載の発明では、基板の焼成を行う前に、基板格納部の内部空間と搬送フォークとを昇温するので、基板焼成炉の炉内支持部材および基板搬送装置の搬送フォークにおける撓みの発生が抑制された状態で基板の焼成処理を開始することができる。 According to the ninth and tenth aspects of the present invention, since the temperature of the internal space of the substrate storage portion and the transfer fork is raised before the substrate is baked, the in-furnace support member of the substrate baking furnace and the transfer fork of the substrate transfer apparatus The firing process of the substrate can be started in a state in which the occurrence of bending in is suppressed.

〈１．基板支持部材〉
〈１−１．基板支持部材の構成〉
図１は、この発明に係る基板支持部材、より具体的には、片持ち状態で基板を支持する基板支持部材の構成を示す概略斜視図である。この発明に係る基板支持部材は、後述する基板焼成炉１の備える炉内支持部材１１１（図４参照）や、後述する基板搬送装置２の搬送フォーク２４ａ，２４ｂ（図７参照）として用いるに適した部材である。 <1. Substrate support member>
<1-1. Configuration of substrate support member>
FIG. 1 is a schematic perspective view showing a configuration of a substrate support member according to the present invention, more specifically, a substrate support member that supports a substrate in a cantilever state. The substrate support member according to the present invention is suitable for use as an in-furnace support member 111 (see FIG. 4) included in the substrate baking furnace 1 described later, and transfer forks 24a and 24b (see FIG. 7) of the substrate transfer apparatus 2 described later. It is a member.

この発明に係る基板支持部材の第１の構成例は、略逆Ｕ字状の断面を持つ形状体として形成された基板支持部材Ｐ１（図１（ａ））であり、第２の構成例は、角形管状の形状体として形成された基板支持部材Ｐ２（図１（ｂ））である。   A first configuration example of the substrate support member according to the present invention is a substrate support member P1 (FIG. 1A) formed as a shape body having a substantially inverted U-shaped cross section, and the second configuration example is The substrate support member P2 (FIG. 1B) formed as a rectangular tubular shape.

なお、図１には、それらの方向関係を明確にするため、ＸＹＺ直交座標系を付している。この座標系においては、Ｚ軸方向を鉛直方向とし、Ｘ、Ｙ軸が水平面を規定するものとする。   In FIG. 1, an XYZ orthogonal coordinate system is attached to clarify the directional relationship. In this coordinate system, the Z-axis direction is the vertical direction, and the X and Y axes define a horizontal plane.

〈Ａ．略逆Ｕ字状断面の支持部材〉
はじめに、基板支持部材Ｐ１について、図１（ａ）を参照しながら説明する。 <A. Support member having a substantially inverted U-shaped cross section>
First, the substrate support member P1 will be described with reference to FIG.

基板支持部材Ｐ１は、略逆Ｕ字状（例えばコ字状）の断面を持つ形状体として形成された部材であり、基端部Ａ１と自由端部Ａ２とを有している。また、基端部Ａ１から自由端部Ａ２に行くにしたがって略直線状に細くなる形状（テーパ状）に成型されている。基端部Ａ１が固定された状態で、支持面Ｐｓ上に基板が載置されることによって、片持ち状態で基板を水平に支持することができる。   The substrate support member P1 is a member formed as a shape body having a substantially inverted U-shaped (eg, U-shaped) cross section, and has a base end portion A1 and a free end portion A2. Moreover, it shape | molds in the shape (taper shape) which becomes thin substantially linearly as it goes to free end part A2 from base end part A1. By placing the substrate on the support surface Ps in a state where the base end portion A1 is fixed, the substrate can be horizontally supported in a cantilever state.

基板支持部材Ｐ１の構成についてより具体的に説明する。基板支持部材Ｐ１は、天板部材Ｈと天板部材Ｈの下方（鉛直下側（Ｚ軸負方向側））に配置された一対の長尺の壁部材Ｖ１，Ｖ２とから構成されている。   The configuration of the substrate support member P1 will be described more specifically. The substrate support member P1 includes a top plate member H and a pair of long wall members V1 and V2 arranged below the top plate member H (vertically below (Z-axis negative direction side)).

天板部材Ｈは、基板の下面を支持する長尺の部材（より具体的には、その上面が支持面Ｐｓを構成する板状の部材）である。   The top plate member H is a long member that supports the lower surface of the substrate (more specifically, a plate-like member whose upper surface forms the support surface Ps).

壁部材Ｖ１，Ｖ２は、天板部材Ｈの下方に天板部材Ｈの長手方向に沿って配列された一対の長尺の部材であり、長手方向（Ｘ軸方向）において天板部材Ｈと略同一の長さを有している。   The wall members V1 and V2 are a pair of long members arranged along the longitudinal direction of the top plate member H below the top plate member H, and are substantially the same as the top plate member H in the longitudinal direction (X-axis direction). Have the same length.

一対の壁部材Ｖ１，Ｖ２のそれぞれは、天板部材Ｈの下面において、天板部材Ｈの長手方向（Ｘ軸方向）についての両端部に沿うように溶接により接合され、互いに対向するように配置されている。つまり、板状の天板部材Ｈの下面の長手方向（Ｘ軸方向）に沿う両端に、それぞれ板状の壁部材Ｖ１と壁部材Ｖ２とが接合されることによって、全体として略逆Ｕ字状の断面を持つ形状体が形成されている。   Each of the pair of wall members V1 and V2 is joined by welding along the both ends of the top plate member H in the longitudinal direction (X-axis direction) on the lower surface of the top plate member H, and is disposed so as to face each other. Has been. That is, the plate-like wall member V1 and the wall member V2 are joined to both ends along the longitudinal direction (X-axis direction) of the lower surface of the plate-like top plate member H, respectively, so that the whole is substantially inverted U-shaped. A shape body having a cross section is formed.

次に、各部材を形成する材質について説明する。基板支持部材Ｐ１は、互いに線膨張率の異なる材質によって形成される複数種類の部材を溶接により接合して一体化されている。つまり、基板支持部材Ｐ１を構成する第１の部材である天板部材Ｈと第２の部材である壁部材Ｖ１，Ｖ２とは互いに線膨張率の異なる材質によって形成されている。   Next, the material forming each member will be described. The substrate support member P1 is integrated by welding a plurality of types of members formed of materials having different linear expansion coefficients. That is, the top plate member H, which is the first member constituting the substrate support member P1, and the wall members V1, V2 which are the second members are formed of materials having different linear expansion coefficients.

より具体的には、天板部材Ｈを形成する材質はＳＵＳ４３０であり、壁部材Ｖ１，Ｖ２を形成する材質はＳＵＳ３０４である。ただし、ＳＵＳ４３０の線膨張率は、ＳＵＳ３０４の線膨張率よりも小さい。つまり、基板支持部材Ｐ１は、基端部Ａ１が固定された状態において、相対的に線膨張率が小さい材質（ＳＵＳ４３０）によって形成された部材（天板部材Ｈ）が、他方の部材（壁部材Ｖ１，Ｖ２）よりも上方（接合面に対して鉛直上側（Ｚ軸正方向側））に位置するように構成されている。   More specifically, the material forming the top plate member H is SUS430, and the material forming the wall members V1 and V2 is SUS304. However, the linear expansion coefficient of SUS430 is smaller than that of SUS304. In other words, in the state where the base end portion A1 is fixed, the substrate support member P1 is formed of a member (top plate member H) formed of a material (SUS430) having a relatively low linear expansion coefficient, and the other member (wall member). V1 and V2) (vertically above the joining surface (Z-axis positive direction side)).

〈Ｂ．角形管状の支持部材〉
次に、基板支持部材Ｐ２について、図１（ｂ）を参照しながら説明する。 <B. Square tubular support member>
Next, the substrate support member P2 will be described with reference to FIG.

基板支持部材Ｐ２は、角形管状の形状体として形成された部材であり、基端部Ｂ１と自由端部Ｂ２とを有している。また、基板支持部材Ｐ１と同様、基端部Ｂ１から自由端部Ｂ２に行くにしたがって略直線状に細くなる形状（テーパ状）に成型されている。基端部Ｂ１が固定された状態で、支持面Ｐｓ上に基板が載置されることによって、片持ち状態で基板を水平に支持することができる。   The board | substrate support member P2 is a member formed as a rectangular tubular shape body, and has the base end part B1 and the free end part B2. Further, like the substrate support member P1, it is molded into a shape (tapered shape) that becomes thinner in a substantially straight line from the base end B1 to the free end B2. The substrate can be horizontally supported in a cantilever state by placing the substrate on the support surface Ps while the base end portion B1 is fixed.

基板支持部材Ｐ２の構成についてより具体的に説明する。基板支持部材Ｐ２は、天板部材Ｈと天板部材Ｈの下方に配置された長尺部材Ｌとから構成されている。   The configuration of the substrate support member P2 will be described more specifically. The substrate support member P <b> 2 includes a top plate member H and a long member L disposed below the top plate member H.

天板部材Ｈは、基板の下面を支持する長尺の部材（より具体的には、その上面が支持面Ｐｓを構成する板状の部材）である。   The top plate member H is a long member that supports the lower surface of the substrate (more specifically, a plate-like member whose upper surface forms the support surface Ps).

長尺部材Ｌは、天板部材Ｈの下方に天板部材Ｈの長手方向に沿って配置されるとともに略Ｕ字状（例えばコ字状）の断面を持つ長尺の部材であり、長手方向（Ｘ軸方向）および幅方向（Ｙ軸方向）において天板部材Ｈと略同一の長さを有している。   The long member L is a long member that is disposed below the top plate member H along the longitudinal direction of the top plate member H and has a substantially U-shaped (eg, U-shaped) cross section. It has substantially the same length as the top plate member H in the (X-axis direction) and the width direction (Y-axis direction).

長尺部材Ｌは、天板部材Ｈの下面において、天板部材Ｈの長手方向（Ｘ軸方向）についての両端部に沿うように溶接により接合されている。すなわち、板状の天板部材Ｈと断面略Ｕ字状の長尺部材Ｌとが、全体として角形管状の形状体が形成されるように接合されている。   The long member L is joined to the bottom surface of the top plate member H by welding so as to follow both end portions in the longitudinal direction (X-axis direction) of the top plate member H. That is, the plate-shaped top plate member H and the long member L having a substantially U-shaped cross section are joined so as to form a rectangular tubular shape as a whole.

次に、各部材を形成する材質について説明する。基板支持部材Ｐ２は、基板支持部材Ｐ１と同様、互いに線膨張率の異なる材質によって形成される複数種類の部材を溶接により接合して一体化されている。つまり、基板支持部材Ｐ２を構成する第１の部材である天板部材Ｈと第２の部材である長尺部材Ｌとは互いに線膨張率の異なる材質によって形成されている。   Next, the material forming each member will be described. Similarly to the substrate support member P1, the substrate support member P2 is integrated by joining together a plurality of types of members formed of materials having different linear expansion coefficients. That is, the top plate member H, which is the first member constituting the substrate support member P2, and the long member L, which is the second member, are formed of materials having different linear expansion coefficients.

より具体的には、天板部材Ｈを形成する材質はＳＵＳ４３０であり、長尺部材Ｌを形成する材質はＳＵＳ３０４である。つまり、基板支持部材Ｐ２は、基端部Ｂ１が固定された状態において、相対的に線膨張率が小さい材質（ＳＵＳ４３０）によって形成された部材（天板部材Ｈ）が、他方の部材（長尺部材Ｌ）よりも上方に位置するように構成されている。   More specifically, the material forming the top plate member H is SUS430, and the material forming the long member L is SUS304. In other words, in the state where the base end portion B1 is fixed, the substrate support member P2 is formed of a member (top plate member H) formed of a material (SUS430) having a relatively small linear expansion coefficient, and the other member (long length). It is configured to be positioned above the member L).

〈１−２．撓みの相殺〉
次に、基板支持部材Ｐ１，Ｐ２の撓みの相殺について説明する。ただし、以下においては、基板支持部材Ｐ１について説明しているが、基板支持部材Ｐ２においても同様である。 <1-2. Deflection of deflection>
Next, offset of the deflection of the substrate support members P1 and P2 will be described. However, in the following, the substrate support member P1 is described, but the same applies to the substrate support member P2.

図２は基板支持部材Ｐ１の撓みの相殺について説明するための図である。   FIG. 2 is a diagram for explaining the offset of the deflection of the substrate support member P1.

上述の通り、基板支持部材Ｐ１は片持ち状態で基板を支持するための部材であり、基端部Ａ１が固定された状態（例えば、基端部Ａ１が鉛直面Ｎ（後述する基板格納部１１の内背面Ｔ１（図５，６参照）等）に固定された状態）で基板を支持する。図２（ａ）は、支持部材Ｐ１が鉛直面Ｎに固定された状態を示している。ここに示すように、基板支持部材Ｐ１には自重による撓みｂ１が生じる。つまり、自重に起因する撓みによって自由端部Ｂ１の上端が基端部Ａ１の上端よりも鉛直方向についてｂ１下方に位置する。   As described above, the substrate support member P1 is a member for supporting the substrate in a cantilever state, and the base end portion A1 is fixed (for example, the base end portion A1 is a vertical surface N (a substrate storage portion 11 described later). The substrate is supported in a state of being fixed to the inner back surface T1 (see FIGS. 5 and 6). 2A shows a state in which the support member P1 is fixed to the vertical plane N. FIG. As shown here, the substrate support member P1 is bent by its own weight. That is, the upper end of the free end B1 is positioned below the upper end of the base end A1 by b1 due to its own weight in the vertical direction.

基板支持部材Ｐ１は、後述するように、基板に対する焼成処理を実行中の基板焼成炉１の内部（より具体的には、焼成空間Ｖ（図４参照））等において基板を支持する。この場合、基板支持部材Ｐ１は、基板を焼成する際の温度（以下において「焼成処理温度」という）のような高温下にさらされる。図２（ｂ）は、基板支持部材Ｐ１が焼成処理温度下におかれた状態を示している。   As will be described later, the substrate support member P1 supports the substrate, for example, inside the substrate firing furnace 1 (more specifically, the firing space V (see FIG. 4)) in which a firing process is being performed on the substrate. In this case, the substrate support member P1 is exposed to a high temperature such as a temperature at which the substrate is baked (hereinafter referred to as “baking temperature”). FIG. 2B shows a state in which the substrate support member P1 is placed at a firing temperature.

焼成処理温度のような高温下にさらされると、部材を構成する材質の剛性が低下する。したがって、基板支持部材には自重による撓みｂ１に加えて、剛性の低下に起因する撓みｂ２が生じることになる（仮想線位置Ｕ）。   When exposed to a high temperature such as the firing temperature, the rigidity of the material constituting the member decreases. Therefore, in addition to the bending b1 due to its own weight, the substrate support member has a bending b2 due to a decrease in rigidity (imaginary line position U).

しかしながら、基板支持部材Ｐ１は、上述の通り、互いに線膨張率の異なる複数種類の部材を接合して一体化されている。このため、温度変化に応じて線膨張率の小さな材質の側に曲がる力Ｆが生じる（バイメタルの原理）。つまり、線膨張率が相対的に小さな材質によって形成されている天板部材Ｈの側に曲がる力Ｆが生じる。この実施の形態においては、天板部材ＨをＳＵＳ４３０で、壁部材Ｖ１，Ｖ２をＳＵＳ３０４で、それぞれ形成しているため、焼成処理温度まで昇温した場合、バイメタル原理による鉛直上向きの力Ｆによって、本来生じるはずであった自重による撓みｂ１と剛性低下による撓みｂ２とが相殺されてフラットな状態となる（図２（ｂ）中実線位置）。   However, as described above, the substrate support member P1 is integrated by joining a plurality of types of members having different linear expansion coefficients. For this reason, a force F that bends to the side of the material having a small linear expansion coefficient according to the temperature change is generated (bimetal principle). That is, a force F that bends to the top plate member H formed of a material having a relatively small linear expansion coefficient is generated. In this embodiment, since the top plate member H is formed of SUS430 and the wall members V1 and V2 are formed of SUS304, respectively, when the temperature is raised to the firing processing temperature, the vertically upward force F by the bimetal principle The bend b1 due to its own weight, which should have occurred originally, and the bend b2 due to the decrease in rigidity cancel each other, resulting in a flat state (the solid line position in FIG. 2B).

〈１−３．基板支持部材の構成の変形例〉
上記においては、基板支持部材Ｐ１において、天板部材Ｈを形成する材質はＳＵＳ４３０であり、壁部材Ｖ１，Ｖ２を形成する材質はＳＵＳ３０４であるとしたが、各部材を構成する材質はこれに限らず、互いに線膨張率の異なる材質を各種組み合わせて選択することができる。基板支持部材Ｐ２においても同様である。 <1-3. Modification Example of Substrate Support Member Configuration>
In the above description, in the substrate support member P1, the material forming the top plate member H is SUS430 and the material forming the wall members V1 and V2 is SUS304. However, the material constituting each member is not limited to this. It is possible to select various combinations of materials having different linear expansion coefficients. The same applies to the substrate support member P2.

また、上記においては、基板支持部材Ｐ１を構成する複数の部材を溶接により一体化しているが、ボルト留め、リベット留め、接着剤を用いて一体化してもよい。また、金属同士の摩擦溶着により接合して一体化してもよい。さらに、上記においては、基板支持部材Ｐ１の全長に渡って接合されているが、処理温度と相殺する撓みによっては、先端より所定の長さを接合してもよいし、ボルトなどで接合する長さを変えてもよい。基板支持部材Ｐ２においても同様である。   Moreover, in the above, although the several member which comprises the board | substrate support member P1 is integrated by welding, you may integrate using a bolt fastening, a rivet fastening, and an adhesive agent. Further, they may be joined and integrated by friction welding between metals. Further, in the above description, the entire length of the substrate support member P1 is joined. However, depending on the deflection that cancels the processing temperature, a predetermined length may be joined from the tip, or a length that is joined by a bolt or the like. You may change the height. The same applies to the substrate support member P2.

また、上記においては、基端部Ａ１，Ｂ１が固定された状態で、相対的に線膨張率が小さい材質によって形成された部材が、他方の部材よりも上方に位置するように構成されるとしたが、逆の構成、すなわち、相対的に線膨張率が小さい材質によって形成された部材が、他方の部材よりも下方に位置するような構成であってもよい。   Further, in the above, when the base end portions A1 and B1 are fixed, a member formed of a material having a relatively small linear expansion coefficient is positioned above the other member. However, the reverse configuration, that is, a configuration in which a member formed of a material having a relatively small linear expansion coefficient is positioned below the other member may be used.

また、上記においては、基板支持部材Ｐ１は、天板部材Ｈと一対の壁部材Ｖ１，Ｖ２より構成されていたが、天板部材Ｈと壁部材Ｖ１，Ｖ２との間にさらに第３の部材を間挿して接合する構成としてもよい。すなわち、天板部材Ｈと壁部材Ｖ１，Ｖ２とを直接接合するのではなく、第３の部材を介して接合するとしてもよい。この場合、第３の部材は、例えば天板部材Ｈと長尺方向および幅方向において略同一の大きさの板状の部材とすることができる。また、第３の部材を形成する材質は、第１の部材である天板部材Ｈと第２の部材である壁部材Ｖ１，Ｖ２との中間の線膨張率の材質によって形成することが望ましい。このように構成することによって、基板支持部材が焼成処理温度のような高温下にさらされた場合において基板支持部材に生じる応力を低減することができる。   In the above description, the substrate support member P1 includes the top plate member H and the pair of wall members V1 and V2. However, a third member is further provided between the top plate member H and the wall members V1 and V2. It is good also as a structure which inserts and joins. That is, the top plate member H and the wall members V1 and V2 may not be directly joined but joined via the third member. In this case, the third member can be a plate-like member having substantially the same size as the top plate member H in the longitudinal direction and the width direction, for example. The material forming the third member is desirably formed of a material having a linear expansion coefficient intermediate between the top plate member H as the first member and the wall members V1 and V2 as the second member. By comprising in this way, the stress which arises in a board | substrate support member when a board | substrate support member is exposed to high temperature like a baking processing temperature can be reduced.

また、上記においては、基板支持部材Ｐ１は、天板部材Ｈと一対の壁部材Ｖ１，Ｖ２より構成されていたが、壁部材Ｖ１，Ｖ２の下方にさらに第３の部材を接合する構成としてもよい。例えば、天板部材Ｈと壁部材Ｖ１，Ｖ２とを接合するとともに壁部材Ｖ１，Ｖ２と第３の部材とを接合することによって、全体として角形管状の形状体を形成するとしてもよい。この場合、第３の部材は、例えば天板部材Ｈと長尺方向および幅方向において略同一の大きさの板状の部材とする。また、第３の部材を形成する材質は、第２の部材である壁部材Ｖ１，Ｖ２よりもさらに線膨張率の大きな材質によって形成することができる。   In the above description, the substrate support member P1 is configured by the top plate member H and the pair of wall members V1 and V2. However, the substrate support member P1 may be configured to further join a third member below the wall members V1 and V2. Good. For example, the top plate member H and the wall members V1 and V2 may be joined and the wall members V1 and V2 and the third member may be joined to form a rectangular tubular shape as a whole. In this case, the third member is a plate-like member having substantially the same size as the top plate member H in the longitudinal direction and the width direction, for example. The material forming the third member can be formed of a material having a larger linear expansion coefficient than the wall members V1 and V2 which are the second members.

また、上記においては、焼成処理温度まで昇温した場合に、自重による撓みｂ１と剛性低下による撓みｂ２とが相殺されてフラットな状態となるとしていたが、焼成処理温度まで昇温して基板を載置した場合に、自重による撓みｂ１と剛性低下による撓みｂ２と載置した基板の重みによる撓みとが相殺されてフラットな状態となるように設計してもよい。   Further, in the above, when the temperature is raised to the firing treatment temperature, the bending b1 due to its own weight and the deflection b2 due to the reduction in rigidity are offset to become a flat state. It may be designed so that when placed, the bend b1 due to its own weight, the bend b2 due to a reduction in rigidity, and the bend due to the weight of the placed substrate cancel each other and become flat.

〈１−４．効果〉
この発明に係る基板支持部材Ｐ１，Ｐ２は、互いに線膨張率の異なる材質によって形成される複数種類の部材を接合して一体化されているので、焼成処理温度のような高温下にさらされた場合に、線膨張率の違いを利用して撓みを相殺させることができる。すなわち、片持ち状態で基板を載置した際に生じる撓みを小さくすることができる。 <1-4. effect>
Since the substrate support members P1 and P2 according to the present invention are integrated by joining a plurality of types of members formed of materials having different linear expansion coefficients, the substrate support members P1 and P2 are exposed to a high temperature such as a firing temperature. In some cases, the difference in linear expansion coefficient can be used to cancel the deflection. That is, it is possible to reduce the bending that occurs when the substrate is placed in a cantilever state.

また、この発明に係る基板支持部材Ｐ１，Ｐ２は、基端部Ａ１，Ｂ１が固定された状態で、相対的に線膨張率が小さい材質によって形成された部材が、他方の部材よりも上方に位置するように構成されている。つまり、焼成処理温度のような高温下にさらされた場合に、相対的に線膨張率の小さい部材の側に曲がる力が鉛直上向きに生じることになる。これによって、自重による撓みと剛性低下による撓みとが相殺される。すなわち、自重と剛性低下に起因する撓みの発生が低減される。なお、このような構成によると、基板支持部材を予め反った形状に成形しなくとも上記の効果が得られるという利点がある。   Further, the substrate support members P1 and P2 according to the present invention are such that a member formed of a material having a relatively low linear expansion coefficient is located above the other member in a state where the base end portions A1 and B1 are fixed. Configured to be located. That is, when exposed to a high temperature such as a firing temperature, a force that bends toward a member having a relatively small linear expansion coefficient is generated vertically upward. As a result, the deflection due to its own weight and the deflection due to a decrease in rigidity are offset. That is, the occurrence of bending due to its own weight and a decrease in rigidity is reduced. In addition, according to such a structure, there exists an advantage that said effect is acquired even if it does not shape | mold the board | substrate support member in the shape which curved beforehand.

また、この発明に係る基板支持部材Ｐ１，Ｐ２においては、各部材を形成する材質としてＳＵＳ４３０とＳＵＳ３０４とが選定されている。これによって、焼成処理温度下にさらされた基板支持部材における撓みの発生を適正に防止することができる。   In the substrate support members P1 and P2 according to the present invention, SUS430 and SUS304 are selected as materials for forming the members. As a result, it is possible to appropriately prevent the occurrence of bending in the substrate support member exposed to the firing temperature.

また、この発明に係る基板支持部材Ｐ１においては、略逆Ｕ字状の断面を持つ形状体として形成されているので、構造的にも撓みが生じにくい。   In addition, since the substrate support member P1 according to the present invention is formed as a shape body having a substantially inverted U-shaped cross section, it is difficult to bend structurally.

また、この発明に係る基板支持部材Ｐ２においては、角形管状の形状体として形成されているので、構造的に撓みが生じにくい上に、基板が載置された状態においても、水平方向にぶれが生じにくい。   In addition, since the substrate support member P2 according to the present invention is formed as a rectangular tubular body, it is difficult to bend structurally, and even when the substrate is placed, the substrate support member P2 does not move horizontally. Hard to occur.

〈２．基板焼成炉〉
〈２−１．基板焼成炉の構成〉
次に、図３，図４を参照しながら、この発明に係る基板焼成炉１（より具体的には、片持ち状態で支持された基板に対する加熱処理を行う基板焼成炉）の構成について説明する。ただし、この発明に係る基板焼成炉１においては、炉内で基板を片持ち状態で支持する支持部材（炉内支持部材１１１）は、先述の基板支持部材Ｐ１（図１（ａ））（もしくは基板支持部材Ｐ２（図１（ｂ）））である。 <2. Substrate firing furnace>
<2-1. Substrate firing furnace configuration>
Next, the structure of the substrate baking furnace 1 according to the present invention (more specifically, the substrate baking furnace for performing the heat treatment on the substrate supported in a cantilever state) will be described with reference to FIGS. . However, in the substrate baking furnace 1 according to the present invention, the support member (in-furnace support member 111) for supporting the substrate in a cantilever state in the furnace is the above-described substrate support member P1 (FIG. 1A) (or This is the substrate support member P2 (FIG. 1B).

図３は、この発明に係る基板焼成炉１の概略斜視図である。また、図４は、図３に示す基板焼成炉１の横断面図（Ｋ１−Ｋ１断面図）である。   FIG. 3 is a schematic perspective view of the substrate baking furnace 1 according to the present invention. 4 is a cross-sectional view (K1-K1 cross-sectional view) of the substrate baking furnace 1 shown in FIG.

基板焼成炉１は、開口部を有する箱形の炉体１０と、炉体１０の開口部を塞ぐルーバタイプのシャッター３０とを備えている。   The substrate baking furnace 1 includes a box-shaped furnace body 10 having an opening, and a louver-type shutter 30 that closes the opening of the furnace body 10.

炉体１０は、基板焼成炉１の本体を構成する筐体であり、断熱材を用いて成型されている。炉体１０はその内部に基板格納部１１、ヒータ１２、ファン１３、耐熱ＨＥＰＡフィルタ１４を収納している。   The furnace body 10 is a housing that constitutes the main body of the substrate firing furnace 1, and is molded using a heat insulating material. The furnace body 10 houses therein a substrate storage part 11, a heater 12, a fan 13, and a heat-resistant HEPA filter 14.

炉体１０の内側面の一方（内側面Ｓ１）には、基板格納部１１の内部空間Ｖ（以下において「焼成空間Ｖ」という）に熱を供給するヒータ１２が備えられている。また、他方の内側面（内側面Ｓ２）には、ファン１３が備えられている。また、ファン１３と基板格納部１１との間には耐熱ＨＥＰＡフィルタ１４が介挿されている。すなわち、ファン１３が矢印ＡＲ１〜４のように炉体１０内の気流を循環させることによって、焼成空間Ｖ内を温度ムラなく均質に所定の焼成処理温度に保つことができる。なお、ファン１３とヒータ１２の位置は逆でもよい。   One of the inner side surfaces (inner side surface S1) of the furnace body 10 is provided with a heater 12 that supplies heat to the internal space V (hereinafter referred to as “firing space V”) of the substrate storage unit 11. Further, a fan 13 is provided on the other inner surface (inner surface S2). Further, a heat resistant HEPA filter 14 is interposed between the fan 13 and the substrate storage unit 11. That is, the fan 13 circulates the airflow in the furnace body 10 as indicated by arrows AR1 to AR4, whereby the inside of the firing space V can be uniformly maintained at a predetermined firing temperature without temperature unevenness. The positions of the fan 13 and the heater 12 may be reversed.

基板格納部１１は、複数の基板を多段状態に格納するための格納部であり、本体を構成する壁面１１０のうち、特に側壁面１１０ａ，１１０ｂはパンチングメタルによって成型されている。   The substrate storage unit 11 is a storage unit for storing a plurality of substrates in a multistage state, and among the wall surfaces 110 constituting the main body, particularly the side wall surfaces 110a and 110b are formed of punching metal.

この基板格納部１１について、図５，図６を参照しながらより具体的に説明する。図５は、基板格納部１１の横断面図（すなわち、図３に示す基板焼成炉１のＫ１−Ｋ１断面からみた基板格納部１１）を示す図であり、図６は、基板格納部１１の縦断面図（すなわち、図３に示す基板焼成炉１のＫ２−Ｋ２断面からみた基板格納部１１）を示す図である。   The substrate storage unit 11 will be described more specifically with reference to FIGS. FIG. 5 is a cross-sectional view of the substrate storage unit 11 (that is, the substrate storage unit 11 viewed from the K1-K1 cross section of the substrate baking furnace 1 shown in FIG. 3). It is a figure which shows the longitudinal cross-sectional view (Namely, the board | substrate storage part 11 seen from the K2-K2 cross section of the substrate baking furnace 1 shown in FIG. 3).

基板格納部１１を構成する筐体の内背面Ｔ１には、複数の炉内支持部材１１１の基端部がそれぞれ固定されている。炉内支持部材１１１は、基板格納部１１内において、基板Ｗを片持ち状態で支持する基板支持部材である。炉内支持部材１１１の長尺方向の長さは、図５に示すように、基板格納部１１に格納された基板Ｗの奥行き方向の長さと同程度の長さを有している。ただし、この炉内支持部材１１１は、基板支持部材Ｐ１（図１（ａ））であり、その具体的な構成については先述した通りである。なお、基板支持部材Ｐ１ではなく基板支持部材Ｐ２（図１（ｂ））であってもよい。   The base end portions of the plurality of in-furnace support members 111 are respectively fixed to the inner back surface T1 of the housing constituting the substrate storage unit 11. The in-furnace support member 111 is a substrate support member that supports the substrate W in a cantilever state in the substrate storage unit 11. As shown in FIG. 5, the length of the in-furnace support member 111 in the longitudinal direction is approximately the same as the length of the substrate W stored in the substrate storage unit 11 in the depth direction. However, the in-furnace support member 111 is the substrate support member P1 (FIG. 1A), and its specific configuration is as described above. The substrate support member P2 (FIG. 1B) may be used instead of the substrate support member P1.

基板格納部１１を構成する筐体の内側面Ｔ２，Ｔ３はパンチングプレートで構成され、複数の補助支持部材１１２の基端部がそれぞれ固定されている。補助支持部材１１２は、基板格納部１１内において、炉内支持部材１１１に支持された基板Ｗを、補助的に支持するための支持部材である。補助支持部材１１２の長尺方向の長さは、図５に示すように、後述する基板搬送装置２の搬送フォーク２４ａと干渉しない程度の長さとする。なお、この補助支持部材１１２は、基板支持部材Ｐ１（図１（ａ））もしくは基板支持部材Ｐ２（図１（ｂ））であってもよい。   Inner side surfaces T2 and T3 of the housing constituting the substrate storage unit 11 are formed of punching plates, and the base end portions of the plurality of auxiliary support members 112 are fixed to each other. The auxiliary support member 112 is a support member for supporting the substrate W supported by the in-furnace support member 111 in the substrate storage unit 11. As shown in FIG. 5, the length of the auxiliary support member 112 in the longitudinal direction is set to a length that does not interfere with a transport fork 24a of the substrate transport apparatus 2 described later. The auxiliary support member 112 may be the substrate support member P1 (FIG. 1A) or the substrate support member P2 (FIG. 1B).

ここで、炉内支持部材１１１および補助支持部材１１２の固定位置（すなわち、基板格納部１１の内背面Ｔ１および内側面Ｔ２，Ｔ３に対する各支持部材の基端部の固定位置）について説明する。   Here, the fixing position of the in-furnace support member 111 and the auxiliary support member 112 (that is, the fixed position of the base end portion of each support member with respect to the inner back surface T1 and the inner side surfaces T2 and T3 of the substrate storage portion 11) will be described.

基板格納部１１の内背面Ｔ１には、同一水平位置に、複数の炉内支持部材１１１（図５においては３個）の基端部が固定されている。また、基板格納部１１の内側面Ｔ２，Ｔ３には、同一水平位置に、複数の補助支持部材１１２（図５においては１０個）の基端部がそれぞれ固定されている。互いに同一水平位置にその基端部が固定されたこれら支持部材の集合は、同一の基板Ｗを支持するために供される。すなわち、基板格納部１１内に格納される複数の基板Ｗ（図６参照）のそれぞれは、図５に示されるように、同一水平位置に固定された支持部材の集合によって水平に支持される。   Base end portions of a plurality of in-furnace support members 111 (three in FIG. 5) are fixed to the inner back surface T1 of the substrate storage portion 11 at the same horizontal position. Further, the base end portions of a plurality of auxiliary support members 112 (10 pieces in FIG. 5) are fixed to the inner side surfaces T2 and T3 of the substrate storage portion 11 at the same horizontal position. A group of these support members whose base end portions are fixed at the same horizontal position is provided to support the same substrate W. That is, each of the plurality of substrates W (see FIG. 6) stored in the substrate storage unit 11 is horizontally supported by a set of support members fixed at the same horizontal position, as shown in FIG.

さらに、基板格納部１１の内背面Ｔ１および内側面Ｔ２，Ｔ３には、同一水平位置に固定された支持部材の集合が、図６に示されるように、鉛直方向について所定の配置間隔（以下において単に「支持部材間隔ｄ」という）で複数設けられている。これによって、基板格納部１１は、それぞれ水平に支持された基板Ｗを多段状態で複数格納することができる。なお、図６においては簡略化して示されているが、基板格納部１１内に設けられる支持部材の段数は例えば４０段以上とする。   Further, on the inner back surface T1 and the inner side surfaces T2 and T3 of the substrate storage unit 11, a set of support members fixed at the same horizontal position has a predetermined arrangement interval in the vertical direction (in the following, as shown in FIG. 6). A plurality of “support member intervals d”) are provided. Thereby, the substrate storage unit 11 can store a plurality of horizontally supported substrates W in a multistage state. In addition, although simplified and shown in FIG. 6, the number of stages of the support members provided in the substrate storage unit 11 is, for example, 40 stages or more.

再び図３を参照する。シャッター３０は、全体位置規制部材３１と、全体位置規制部３１上に鉛直方向に積層載置された複数個のルーバ３２ａ，３２ｂ，３２ｃとを備える。   Refer to FIG. 3 again. The shutter 30 includes an overall position restricting member 31 and a plurality of louvers 32a, 32b, and 32c stacked on the overall position restricting portion 31 in the vertical direction.

全体位置規制部材３１には昇降機構（図示省略）が取り付けられており、上下方向（矢印ＡＲ５）に昇降可能である。全体位置規制部材３１に取り付けられた昇降機構を制御することによって、全体位置規制部材３１およびそれに積層載置された複数のルーバ３２ａ，３２ｂ，３２ｃを一体に昇降させることができる。   A lifting mechanism (not shown) is attached to the overall position regulating member 31 and can be moved up and down (arrow AR5). By controlling the lifting mechanism attached to the overall position restricting member 31, the overall position restricting member 31 and the plurality of louvers 32a, 32b, and 32c stacked thereon can be raised and lowered integrally.

さらに、複数のルーバ３２ａ，３２ｂ，３２ｃのそれぞれにも昇降機構（図示省略）が取り付けられており、各ルーバ３２ａ，３２ｂ，３２ｃは上下方向（矢印ＡＲ６，７，８）に昇降可能である。例えば、ルーバ３２ｂに取り付けられた昇降機構を制御することによって、ルーバ３２ｂおよびそれに積層載置されたルーバ３２ａを一体に昇降させることができる。すなわち、ルーバ３２ｂを上方に移動させることによって、ルーバ３２ｃとルーバ３２ｂの間に開口部Ｑ（図６参照）を形成することができる。   Further, an elevating mechanism (not shown) is also attached to each of the plurality of louvers 32a, 32b, 32c, and each louver 32a, 32b, 32c can be raised and lowered in the vertical direction (arrows AR6, 7, 8). For example, by controlling an elevating mechanism attached to the louver 32b, the louver 32b and the louver 32a stacked thereon can be raised and lowered integrally. That is, by moving the louver 32b upward, an opening Q (see FIG. 6) can be formed between the louver 32c and the louver 32b.

つまり、ルーバ３２ａ，３２ｂ，３２ｃおよび全体位置規制部材３１のそれぞれを昇降制御することによって、基板格納部１１の多段構造のうちの任意の段に対向した開口部を形成することができる。これによって、図６および図５に示すように、後述する基板搬送装置２に備えられた搬送フォーク２４ａが、基板格納部１１の多段構造のうちの任意の段にアクセス（より具体的には、任意の段に載置された基板Ｗを取り出したり、任意の段に基板Ｗを載置すること）が可能となる。また、ルーバ３２ａ，３２ｂ，３２ｃの移動距離を適切に設定することによって、形成される開口部の鉛直方向についての長さを適正値（より具体的には、搬送フォーク２４ａが基板Ｗを載置した状態で挿通可能な最小の値）とすることができる。   In other words, by controlling the louvers 32 a, 32 b, 32 c and the overall position regulating member 31 to move up and down, it is possible to form an opening facing an arbitrary stage of the multistage structure of the substrate storage unit 11. As a result, as shown in FIGS. 6 and 5, a transfer fork 24 a provided in the substrate transfer apparatus 2 described later accesses an arbitrary stage of the multistage structure of the substrate storage unit 11 (more specifically, It is possible to take out the substrate W placed on an arbitrary stage or place the substrate W on an arbitrary stage). Further, by appropriately setting the moving distance of the louvers 32a, 32b, and 32c, the length of the formed opening in the vertical direction is set to an appropriate value (more specifically, the transport fork 24a places the substrate W thereon. The minimum value that can be inserted in this state).

〈２−２．効果〉
この発明に係る基板焼成炉１は、炉内支持部材１１１が、基板支持部材Ｐ１もしくは基板支持部材Ｐ２であるので、焼成処理温度のような高温下においても炉内支持部材１１１における撓みの発生を抑制することができる。すなわち、撓みが抑制される分、支持部材間隔ｄ（図６参照）を小さくすることができる。つまり、基板焼成炉の高さを低くすることが可能となる。基板焼成炉の小型化が可能となることによって、熱損失の低減、製造コストの低減、といった効果が得られる。また、単位高さあたりに処理可能な基板の枚数が増加するため、基板焼成炉１の高さの最大値が所定値（例えば輸送限界高さ）に制限されている場合に、基板焼成炉１に格納可能な基板の枚数を増加させることができる。すなわち、基板焼成炉１の処理能力を向上させることができる。また、製造時や輸送時の最大寸法の制限を受けないので、基板焼成炉１の分割も不要となるため、密閉化が容易となる。 <2-2. effect>
In the substrate firing furnace 1 according to the present invention, since the in-furnace support member 111 is the substrate support member P1 or the substrate support member P2, the in-furnace support member 111 does not bend even at a high temperature such as the firing temperature. Can be suppressed. That is, the support member interval d (see FIG. 6) can be reduced as much as the bending is suppressed. That is, the height of the substrate baking furnace can be reduced. Since the substrate baking furnace can be downsized, effects such as reduction in heat loss and reduction in manufacturing cost can be obtained. Further, since the number of substrates that can be processed per unit height increases, the substrate baking furnace 1 when the maximum height of the substrate baking furnace 1 is limited to a predetermined value (for example, the transport limit height). The number of substrates that can be stored in the memory can be increased. That is, the processing capacity of the substrate baking furnace 1 can be improved. Further, since there is no restriction on the maximum dimension during manufacturing or transportation, the substrate baking furnace 1 is not required to be divided, and sealing is easy.

〈３．基板搬送装置〉
〈３−１．基板搬送装置の構成〉
次に、図７を参照しながら、この発明に係る基板搬送装置２（より具体的には、片持ち状態で基板を支持しながら基板焼成炉１等に対する基板の搬出入を行う基板搬送装置）の構成について説明する。ただし、この発明に係る基板搬送装置２においては、搬送の際に基板を片持ち状態で支持する支持部材（搬送フォーク２４ａ，２４ｂ）は、先述の基板支持部材Ｐ１（図１（ａ））（もしくは基板支持部材Ｐ２（図１（ｂ）））である。 <3. Substrate transfer device>
<3-1. Configuration of substrate transfer device>
Next, referring to FIG. 7, the substrate transfer apparatus 2 according to the present invention (more specifically, the substrate transfer apparatus that carries the substrate in and out of the substrate baking furnace 1 while supporting the substrate in a cantilever state) The configuration of will be described. However, in the substrate transport apparatus 2 according to the present invention, the support members (transport forks 24a and 24b) that support the substrate in a cantilever state during transport are the above-described substrate support member P1 (FIG. 1A) ( Alternatively, it is the substrate support member P2 (FIG. 1B).

図７は、この発明に係る基板搬送装置２の構成を示す概略斜視図である。   FIG. 7 is a schematic perspective view showing the configuration of the substrate transfer apparatus 2 according to the present invention.

この基板搬送装置２は、円筒状の装置本体２１と、装置本体２１に取り付けられたコラム２２と、コラム２２の上面に取り付けられた第１の搬送アーム２３ａおよび第２の搬送アーム２３ｂと、各搬送アーム２３ａ，２３ｂに固定された複数の搬送フォーク２４ａ，２４ｂと、を備えている。   The substrate transfer apparatus 2 includes a cylindrical apparatus main body 21, a column 22 attached to the apparatus main body 21, a first transfer arm 23a and a second transfer arm 23b attached to the upper surface of the column 22, And a plurality of transport forks 24a and 24b fixed to the transport arms 23a and 23b.

装置本体２１は基板焼成炉１を含む各種の処理部によって構成される基板処理装置の底面に配置される。装置本体２１には円筒状の外形を有するコラム２２が昇降自在かつ回動自在に取り付けられている。   The apparatus main body 21 is disposed on the bottom surface of the substrate processing apparatus constituted by various processing units including the substrate baking furnace 1. A column 22 having a cylindrical outer shape is attached to the apparatus main body 21 so as to be movable up and down and rotatable.

コラム２２は、装置本体２１内に備えられた昇降機構（図示省略）によって上下方向（矢印ＡＲ２１）に昇降可能である。また、装置本体２１内に備えられた回動機構（図示省略）によってコラム２２の中心軸Ａ１のまわりに回動可能である。   The column 22 can be moved up and down (arrow AR21) by an elevating mechanism (not shown) provided in the apparatus main body 21. Further, it can be rotated around the central axis A <b> 1 of the column 22 by a rotation mechanism (not shown) provided in the apparatus main body 21.

第１の搬送アーム２３ａは、ベースアーム２３１ａと、ベースアーム２３１ａの先端に取り付けられた中間アーム２３２ａと、中間アーム２３２ａの先端に取り付けられた搬送フォーク保持アーム２３３ａと、を備えている。また、ベースアーム２３１ａ、中間アーム２３２ａ、搬送フォーク保持アーム２３３ａのそれぞれは回動機構（図示省略）備え、ベースアーム２３１ａは中心軸Ａ２ａのまわりに、中間アーム２３２ａは中心軸Ａ３ａのまわりに、搬送フォーク保持アーム２３３ａは中心軸Ａ４ａのまわりに、それぞれ回動可能である。   The first transfer arm 23a includes a base arm 231a, an intermediate arm 232a attached to the tip of the base arm 231a, and a transfer fork holding arm 233a attached to the tip of the intermediate arm 232a. Each of the base arm 231a, the intermediate arm 232a, and the transfer fork holding arm 233a includes a rotation mechanism (not shown). The base arm 231a is transferred around the central axis A2a, and the intermediate arm 232a is transferred around the central axis A3a. The fork holding arms 233a can rotate around the central axis A4a.

搬送フォーク保持アーム２３３ａには、複数の搬送フォーク２４ａの基端部が固定されている。搬送フォーク２４ａは、基板を片持ち状態で支持する基板支持部材である。ただし、この搬送フォーク２４ａは、基板支持部材Ｐ１（図１（ａ））であり、その具体的な構成については先述した通りである。なお、基板支持部材Ｐ１ではなく基板支持部材Ｐ２（図１（ｂ））であってもよい。   The base end portions of the plurality of transport forks 24a are fixed to the transport fork holding arm 233a. The transport fork 24a is a substrate support member that supports the substrate in a cantilever state. However, the transport fork 24a is the substrate support member P1 (FIG. 1A), and the specific configuration thereof is as described above. The substrate support member P2 (FIG. 1B) may be used instead of the substrate support member P1.

第２の搬送アーム２３ｂは、第１の搬送アーム２３ａとほぼ同様の構成を有している。なお、第２の搬送アーム２３ｂの備える搬送フォーク保持アーム２３３ｂには、第１の搬送アーム２３ａの備える搬送フォーク支持アーム２３３ａと同様に、複数の搬送フォーク２４ｂの基端部が固定されている。搬送フォーク２４ｂは、搬送フォーク２４ａと同様、基板を片持ち状態で支持する基板支持部材である。   The second transfer arm 23b has substantially the same configuration as the first transfer arm 23a. In addition, the base end part of the some conveyance fork 24b is being fixed to the conveyance fork holding arm 233b with which the 2nd conveyance arm 23b is equipped similarly to the conveyance fork support arm 233a with which the 1st conveyance arm 23a is equipped. The transport fork 24b is a substrate support member that supports the substrate in a cantilever state, like the transport fork 24a.

ただし、搬送フォーク２４ｂと搬送フォーク２４ａとは、互いの干渉を防ぐため、上下にずれて互いに平行な位置関係にある。すなわち、第２の搬送アーム２３ｂの備える搬送フォーク保持アーム２３３ｂは、中間アーム２３２ｂの基端部側に延びる下アーム部３３１ｂと、下アーム部３３１ｂの先端から立ち上がる立ち上がり部３３２ｂと、立ち上がり部３３２ｂの上端に固定され、中間アーム２３２ｂの先端に向けて折り返す上アーム部３３３ｂと、を有しており、複数の搬送フォーク２４ｂの基端部は上アーム部３３３ｂに固定されている。   However, the transport fork 24b and the transport fork 24a are displaced in the vertical direction and are in parallel with each other in order to prevent mutual interference. That is, the transport fork holding arm 233b included in the second transport arm 23b includes a lower arm part 331b extending toward the base end side of the intermediate arm 232b, a rising part 332b rising from the tip of the lower arm part 331b, and a rising part 332b. An upper arm portion 333b fixed to the upper end and turned back toward the distal end of the intermediate arm 232b. Base end portions of the plurality of transport forks 24b are fixed to the upper arm portion 333b.

第１および第２の搬送アーム２３ａ，２３ｂは、いわゆるスカラー方式のロボットを構成しており、ベースアーム２３１ａ，２３１ｂ、中間アーム２３２ａ，２３２ｂ、搬送フォーク保持アーム２３３ａ，２３３ｂが回動されることによって、搬送フォーク２４ａ，２４ｂの姿勢を変えることなくコラム２２の中心軸Ａ１に対して直線的に近接／離反変位させることができる（図６の矢印ＡＲ２２参照）。また、同時に、コラム２２が昇降されることによって、搬送フォーク２４ａ，２４ｂを、任意の水平位置におくことができる。すなわち、図５、図６に示されるように、基板格納部１１の多段構造のうちの任意の段に載置された基板Ｗを取り出したり、任意の段に基板Ｗを載置することが可能となる。   The first and second transfer arms 23a and 23b constitute a so-called scalar robot, and the base arms 231a and 231b, the intermediate arms 232a and 232b, and the transfer fork holding arms 233a and 233b are rotated. Further, it is possible to linearly approach / separately move the central axis A1 of the column 22 without changing the posture of the transport forks 24a, 24b (see arrow AR22 in FIG. 6). At the same time, the transport forks 24a and 24b can be placed in an arbitrary horizontal position by moving the column 22 up and down. That is, as shown in FIG. 5 and FIG. 6, it is possible to take out the substrate W placed on an arbitrary stage of the multistage structure of the substrate storage unit 11 or place the substrate W on an arbitrary stage. It becomes.

〈３−２．効果〉
この発明に係る基板搬送装置２は、搬送フォーク２４ａ，２４ｂが、基板支持部材Ｐ１もしくは基板支持部材Ｐ２であるので、焼成処理温度のような高温下においても搬送フォーク２４ａ，２４ｂにおける撓みの発生を抑制することができる。すなわち、搬送フォーク２４ａ，２４ｂの撓みが抑制される分、搬送フォーク２４ａ，２４ｂによって基板の搬出入を行う基板焼成炉１等において、炉内支持部材１１１の支持部材間隔ｄ（図６参照）を、搬送装置の搬送フォークの撓みを考慮して予め大きく設計しておく必要がない。つまり、支持部材間隔ｄを小さくすることができる。 <3-2. effect>
In the substrate transport apparatus 2 according to the present invention, since the transport forks 24a and 24b are the substrate support member P1 or the substrate support member P2, the transport forks 24a and 24b can bend even at a high temperature such as a baking temperature. Can be suppressed. That is, the support member interval d (see FIG. 6) of the in-furnace support member 111 is set in the substrate firing furnace 1 or the like in which the substrate is carried in and out by the transport forks 24a and 24b by the amount that the bending of the transport forks 24a and 24b is suppressed. In view of the bending of the transport fork of the transport device, it is not necessary to design a large size in advance. That is, the support member interval d can be reduced.

〈４．基板焼成炉１と基板搬送装置２とを用いた基板焼成処理〉
〈４−１．処理動作〉
次に、基板焼成炉１と基板搬送装置２とを用いて、基板の焼成処理を行う場合の処理動作について図８と図４とを参照して説明する。図８は、基板焼成炉１と基板搬送装置２とを用いて、基板の焼成処理を行う際の処理動作を示すフローチャートである。 <4. Substrate Baking Process Using Substrate Baking Furnace 1 and Substrate Transfer Device 2>
<4-1. Processing action>
Next, a processing operation when performing a substrate baking process using the substrate baking furnace 1 and the substrate transfer device 2 will be described with reference to FIGS. FIG. 8 is a flowchart showing a processing operation when the substrate baking process is performed using the substrate baking furnace 1 and the substrate transfer apparatus 2.

はじめに、基板焼成炉１のヒータ１２によって焼成空間Ｖに熱の供給を開始し、焼成空間Ｖを焼成処理温度（例えば３００℃）まで予備昇温する（ステップＳ１）。ただし、ここではまだ基板格納部１１に基板は１枚も格納されていない。焼成空間Ｖが焼成処理温度になると、先述の通り、炉内支持部材１１１は撓みが相殺されてフラットな状態となる（図２（ｂ）参照）。   First, supply of heat to the firing space V is started by the heater 12 of the substrate firing furnace 1, and the firing space V is preliminarily heated to a firing temperature (for example, 300 ° C.) (step S1). However, no substrate is stored in the substrate storage unit 11 yet. When the firing space V reaches the firing processing temperature, as described above, the in-furnace support member 111 is in a flat state with the deflection canceled (see FIG. 2B).

焼成空間Ｖが焼成処理温度まで昇温して予備昇温が完了すると、続いて、基板搬送処理装置２に、ダミー動作を実行させる（ステップＳ２）。すなわち、搬送フォーク２４ａ，２４ｂに基板を保持しない状態で、基板焼成炉１に対する基板の搬出入動作を行わせる。つまり、焼成処理温度まで昇温した焼成空間Ｖに対して搬送フォーク２４ａおよび搬送フォーク２４ｂが挿入されることによって、搬送フォーク２４ａおよび搬送フォーク２４ｂが焼成処理温度近くの平衡温度まで昇温する。これによって、先述の通り、搬送フォーク２４ａ，２４ｂは撓みが相殺されてフラットな状態となる（図２（ｂ）参照）。   When the firing space V is heated to the firing processing temperature and the preliminary temperature rise is completed, the substrate transfer processing device 2 is subsequently caused to perform a dummy operation (step S2). That is, the substrate is carried into and out of the substrate baking furnace 1 without holding the substrate on the transport forks 24a and 24b. That is, by inserting the transport fork 24a and the transport fork 24b into the firing space V that has been heated to the firing processing temperature, the transport fork 24a and the transport fork 24b are heated to an equilibrium temperature close to the firing processing temperature. As a result, as described above, the transport forks 24a and 24b are in a flat state with their deflections canceled (see FIG. 2B).

所定時間ダミー動作を実行することによって搬送フォーク２４ａ，２４ｂが焼成処理温度近くの平衡温度まで昇温すると、続いて、基板の焼成処理を開始する（ステップＳ３）。すなわち、基板搬送装置２が基板焼成炉１に対して基板の搬出入を行うとともに、基板焼成炉１に搬入された基板に対する焼成処理が行われる。すなわち、未処理基板を搬送フォーク２４ａ（もしくは搬送フォーク２４ｂ）上に載置して基板焼成炉１内に搬入して炉内支持部材１１１上に載置するとともに、炉内支持部材上に載置された焼成処理済みの基板を搬送フォーク２４ｂ（もしくは搬送フォーク２４ａ）上に載置して基板焼成炉１内より搬出する処理を反復して行う（図５，図６参照）。   When the transfer forks 24a and 24b are heated to an equilibrium temperature close to the firing temperature by executing the dummy operation for a predetermined time, the substrate firing process is subsequently started (step S3). That is, the substrate transfer apparatus 2 carries the substrate in and out of the substrate baking furnace 1 and performs a baking process on the substrate transferred into the substrate baking furnace 1. That is, the unprocessed substrate is placed on the transport fork 24a (or transport fork 24b), loaded into the substrate baking furnace 1, placed on the in-furnace support member 111, and placed on the in-furnace support member. The process of placing the fired substrate on the transport fork 24b (or transport fork 24a) and unloading it from the substrate firing furnace 1 is repeated (see FIGS. 5 and 6).

なお、ステップＳ２においては、ダミー動作を実行させることによって搬送フォーク２４ａ，２４ｂを予備的に昇温させていたが、搬送フォーク２４ａおよび搬送フォーク２４ｂを焼成空間Ｖ内の所定位置（例えば焼成空間Ｖの下層の位置）に所定時間おくことによって搬送フォーク２４ａ，２４ｂを予備的に昇温させてもよい。   In step S2, the transport forks 24a and 24b are preliminarily heated by executing a dummy operation. However, the transport forks 24a and 24b are placed at predetermined positions in the firing space V (for example, the firing space V). The transport forks 24a and 24b may be preliminarily heated by placing them for a predetermined time at the lower layer position).

〈４−２．効果〉
この発明に係る基板焼成方法では、基板の焼成処理（ステップＳ３）を行う前に、焼成空間Ｖと搬送フォーク２４ａ，２４ｂとを予備的に昇温する（ステップＳ１，２）。すなわち、基板焼成炉１の炉内支持部材１１１および基板搬送装置２の搬送フォーク２４ａ，２４ｂとにおける撓みの発生が抑制された状態（図２（ｂ）参照）で基板の焼成処理を開始することができる。 <4-2. effect>
In the substrate baking method according to the present invention, the baking space V and the transport forks 24a and 24b are preliminarily heated before performing the substrate baking process (step S3) (steps S1 and S2). That is, the substrate firing process is started in a state where the occurrence of bending in the in-furnace support member 111 of the substrate firing furnace 1 and the transport forks 24a and 24b of the substrate transport apparatus 2 is suppressed (see FIG. 2B). Can do.

この発明に係る基板支持部材Ｐ１，Ｐ２の構成を示す概略斜視図である。It is a schematic perspective view which shows the structure of board | substrate support member P1, P2 which concerns on this invention. 基板支持部材の撓みの相殺について説明するための図である。It is a figure for demonstrating cancellation of the bending of a board | substrate support member. この発明に係る基板焼成炉１の概略斜視図である。1 is a schematic perspective view of a substrate baking furnace 1 according to the present invention. 基板焼成炉１の横断面図である。1 is a cross-sectional view of a substrate baking furnace 1. 基板格納部１１の横断面図である。3 is a cross-sectional view of a substrate storage unit 11. FIG. 基板格納部１１の縦断面図である。3 is a longitudinal sectional view of a substrate storage unit 11. FIG. この発明に係る基板搬送装置２の概略斜視図である。1 is a schematic perspective view of a substrate transfer apparatus 2 according to the present invention. 基板焼成炉１と基板搬送装置２とを用いて、基板の焼成処理を行う際の処理動作を示すフローチャートである。5 is a flowchart showing a processing operation when performing a substrate baking process using the substrate baking furnace 1 and the substrate transfer device 2.

符号の説明Explanation of symbols

１ 基板焼成炉
２ 基板搬送装置
１２ ヒータ
２４ａ，２４ｂ 搬送フォーク
１１１ 炉内支持部材
Ｐ１，Ｐ２ 基板支持部材
Ａ１，Ｂ１ 基端部
Ａ２，Ｂ２ 自由端部
Ｈ 天板部材
Ｖ１，Ｖ２ 壁部材
Ｌ 長尺部材
DESCRIPTION OF SYMBOLS 1 Substrate baking furnace 2 Substrate transfer apparatus 12 Heater 24a, 24b Transfer fork 111 In-furnace support member P1, P2 Substrate support member A1, B1 Base end part A2, B2 Free end part H Top plate member V1, V2 Wall member L Long Element

Claims (10)

片持ち状態で基板を支持する基板支持部材であって、
前記基板支持部材が、互いに線膨張率の異なる材質によって形成される複数種類の部材を接合して一体化したものであり、
前記複数種類の部材が、線膨張率が小さい順に上から配置されることを特徴とする基板支持部材。 A substrate support member for supporting a substrate in a cantilever state,
The substrate support member state, and are not integrated by joining a plurality of types of members that are formed by different coefficient of linear expansion the material with each other,
The plurality of types of members, the substrate support member, wherein Rukoto disposed in order from the top linear expansion coefficient is small. 請求項１に記載の基板支持部材であって、
前記基板支持部材が、第１の部材と、前記第１の部材よりも線膨張率の大きい材質によって形成された第２の部材とを接合して一体化したものであり、
前記基板支持部材の基端部が固定された状態において、前記第１の部材が前記第２の部材よりも上方に位置することを特徴とする基板支持部材。 The substrate support member according to claim 1,
The substrate support member is formed by joining and integrating a first member and a second member formed of a material having a larger linear expansion coefficient than the first member,
The substrate support member, wherein the first member is positioned above the second member in a state in which a base end portion of the substrate support member is fixed. 請求項２に記載の基板支持部材であって、
前記第１の部材を形成する材質がＳＵＳ４３０であり、前記第２の部材を形成する材質がＳＵＳ３０４であることを特徴とする基板支持部材。 The substrate support member according to claim 2,
A substrate supporting member, wherein the material forming the first member is SUS430 and the material forming the second member is SUS304. 請求項２または３に記載の基板支持部材であって、
前記第１の部材として設けられ、基板の下面を支持する長尺の天板部材と、
前記第２の部材として設けられ、前記天板部材の下方に前記天板部材の長手方向に沿って配列された一対の長尺の壁部材と、
が接合されることにより、前記基板支持部材が略逆Ｕ字状の断面を持つ形状体として形成されていることを特徴とする基板支持部材。 The substrate support member according to claim 2 or 3,
A long top plate member provided as the first member and supporting the lower surface of the substrate;
A pair of long wall members provided as the second member and arranged along the longitudinal direction of the top plate member below the top plate member;
The substrate support member is formed as a shape body having a substantially inverted U-shaped cross section by bonding. 請求項２または３に記載の基板支持部材であって、
前記第１の部材として設けられ、基板の下面側を支持する長尺の天板部材と、
前記第２の部材として設けられ、前記天板部材の下方に前記天板部材の長手方向に沿って配置されるとともに略Ｕ字状の断面を持つ長尺部材と、
が接合されることにより、前記基板支持部材が角型管状の形状体として形成されていることを特徴とする基板支持部材。 The substrate support member according to claim 2 or 3,
A long top plate member provided as the first member and supporting the lower surface side of the substrate;
A long member that is provided as the second member and is disposed along the longitudinal direction of the top plate member below the top plate member and has a substantially U-shaped cross section;
A substrate support member, wherein the substrate support member is formed as a rectangular tubular shape body by bonding. 請求項１から５のいずれかに記載の基板支持部材であって、  A substrate support member according to any one of claims 1 to 5,
基板の焼成処理温度下において、自身の変形によって撓みを相殺することを特徴とする基板支持部材。  A substrate support member that cancels out flexure by deformation of itself under a substrate baking temperature. 基板に対する焼成処理を行う基板焼成炉であって、  A substrate baking furnace for performing a baking process on a substrate,
複数の基板を複数段状態で格納する基板格納部と、  A substrate storage section for storing a plurality of substrates in a plurality of stages;
前記基板格納部の内部空間に熱を供給して所定の基板焼成温度にする熱供給部と、  A heat supply unit configured to supply heat to the internal space of the substrate storage unit to obtain a predetermined substrate baking temperature;
前記基板格納部の内背面に固定配置され、前記内部空間において基板を片持ち状態で支持する炉内支持部材と、  An in-furnace support member that is fixedly disposed on the inner back surface of the substrate storage unit and supports the substrate in a cantilever state in the internal space;
を備え、With
前記炉内支持部材が、請求項１から６のいずれかに記載の基板支持部材であることを特徴とする基板焼成炉。  A substrate baking furnace, wherein the in-furnace support member is the substrate support member according to claim 1. 基板焼成炉に対する基板の搬出入を行う基板搬送装置であって、  A substrate transfer device for carrying a substrate in and out of a substrate baking furnace,
基板を片持ち状態で支持する搬送フォークと、  A transport fork that supports the substrate in a cantilevered state;
前記搬送フォークを駆動して前記基板焼成炉にアクセスさせる搬送フォーク駆動部と、  A transport fork drive unit that drives the transport fork to access the substrate baking furnace;
を備え、With
前記搬送フォークが、請求項１から６のいずれかに記載の基板支持部材であることを特徴とする基板搬送装置。  7. A substrate transfer apparatus, wherein the transfer fork is the substrate support member according to claim 1. 請求項７に記載の基板焼成炉および請求項８に記載の基板搬送装置を用いて基板を焼成する基板処理方法において、  In the substrate processing method of baking a substrate using the substrate baking furnace according to claim 7 and the substrate transfer device according to claim 8,
前記基板格納部の内部空間の温度を、焼成処理温度まで昇温する炉内予備昇温工程と、  A preliminary temperature raising step in the furnace for raising the temperature of the internal space of the substrate storage part to a firing temperature;
前記搬送フォークの温度を、焼成処理温度まで昇温する搬送フォーク予備昇温工程と、  A transport fork preliminary heating step for raising the temperature of the transport fork to a firing temperature;
前記基板搬送装置によって前記基板焼成炉に対する基板の搬出入を行うとともに、前記基板焼成炉において基板の焼成処理を行う基板焼成処理工程と、  A substrate firing process step of carrying in and out of the substrate with respect to the substrate firing furnace by the substrate transport apparatus, and firing the substrate in the substrate firing furnace,
を備えることを特徴とする基板処理方法。A substrate processing method comprising: 請求項９に記載の基板処理方法において、  The substrate processing method according to claim 9,
前記搬送フォーク予備昇温工程が、  The transport fork pre-heating step,
前記基板搬送装置に、前記基板焼成炉に対する基板の搬出入動作を、基板を保持しない状態で行わせるダミー動作工程、  A dummy operation step for causing the substrate transfer device to perform a substrate carry-in / out operation with respect to the substrate baking furnace without holding the substrate;
を備えることを特徴とする基板処理方法。A substrate processing method comprising:
JP2006088008A 2006-03-28 2006-03-28 Substrate support member, substrate baking furnace, substrate transfer apparatus, and substrate processing method Expired - Fee Related JP4571089B2 (en)

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