JP4569921B2 - 省電力メモリアクセス制御装置 - Google Patents
省電力メモリアクセス制御装置 Download PDFInfo
- Publication number
- JP4569921B2 JP4569921B2 JP2004227928A JP2004227928A JP4569921B2 JP 4569921 B2 JP4569921 B2 JP 4569921B2 JP 2004227928 A JP2004227928 A JP 2004227928A JP 2004227928 A JP2004227928 A JP 2004227928A JP 4569921 B2 JP4569921 B2 JP 4569921B2
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- JP
- Japan
- Prior art keywords
- power
- access
- address
- memory access
- access control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 230000000593 degrading effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40622—Partial refresh of memory arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Memory System (AREA)
- Dram (AREA)
Description
図5に示す省電力制御部2の省電力モードをCPUが読み取ることにより、CPU1は省電力モード時に非アクティブになるメモリ領域がわかる。その情報をもとにCPU1は、ノンインタリーブアクセス領域とインタリーブアクセス領域の境界となるアドレスを境界アドレスレジスタ7に設定する。
2 省電力制御部
3 メモリコントローラ部
4 メモリインタフェース
5 メモリ
6 アドレスバス
7 境界アドレスレジスタ
8 バンクビット切り替え長カウンタ
9 インタリーブ用バンクイネーブルレジスタ
10 データ種別設定レジスタ
11 アドレス比較部
12 アドレス変換部
13 アドレス変換テーブル
14 アドレス
15 アドレス変換イネーブル信号
16 ノンインタリーブアクセスアドレス
17 インタリーブアクセスアドレス
Claims (6)
- 記憶装置の省電力モード時にセルフリフレッシュを行うバンクおよびバンクの一部に少なくともノンインタリーブアクセス制御を行うことができる仕組みを有し、通常モード時において、省電力モード時にセルフリフレッシュを行う領域にノンインタリーブアクセスを行い、セルフリフレッシュを行わない領域にインタリーブアクセスを行うようなメモリアクセスをする制御を行う仕組みを有する省電力メモリアクセス制御装置。
- 通常モード時と省電力モード時とによりメモリアクセス制御装置のインタリーブ領域へのアクセスと、ノンインタリーブ領域へのアクセスを切り替える請求項1の省電力メモリアクセス制御装置。
- 通常モード時において、入力データの種類により、前記インタリーブアクセスと前記ノンインタリーブアクセスとを切り替える仕組みを有する請求項1記載の省電力メモリアクセス制御装置。
- 請求項1記載の省電力メモリアクセス制御装置を内部に具備するシステムLSI。
- 請求項1記載の省電力メモリアクセス制御装置を具備する携帯端末。
- 請求項1記載の省電力メモリアクセス制御装置を具備する画像処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004227928A JP4569921B2 (ja) | 2004-08-04 | 2004-08-04 | 省電力メモリアクセス制御装置 |
US11/194,935 US7196961B2 (en) | 2004-08-04 | 2005-08-02 | Memory control device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004227928A JP4569921B2 (ja) | 2004-08-04 | 2004-08-04 | 省電力メモリアクセス制御装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006048342A JP2006048342A (ja) | 2006-02-16 |
JP4569921B2 true JP4569921B2 (ja) | 2010-10-27 |
Family
ID=35757210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004227928A Expired - Fee Related JP4569921B2 (ja) | 2004-08-04 | 2004-08-04 | 省電力メモリアクセス制御装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7196961B2 (ja) |
JP (1) | JP4569921B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11681449B2 (en) | 2012-06-19 | 2023-06-20 | Samsung Electronics Co., Ltd. | Memory system and SoC including linear address remapping logic |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070263649A1 (en) * | 2006-05-12 | 2007-11-15 | Genti Cuni | Network diagnostic systems and methods for capturing network messages |
KR20100100395A (ko) * | 2009-03-06 | 2010-09-15 | 삼성전자주식회사 | 복수의 프로세서를 포함하는 메모리 시스템 |
JP2011059937A (ja) * | 2009-09-09 | 2011-03-24 | Seiko Epson Corp | 電子機器 |
TWI442232B (zh) * | 2011-08-03 | 2014-06-21 | Novatek Microelectronics Corp | 動態存取記憶體的更新裝置與方法 |
JP2013069381A (ja) * | 2011-09-22 | 2013-04-18 | Toshiba Corp | 半導体記憶装置 |
US9342443B2 (en) | 2013-03-15 | 2016-05-17 | Micron Technology, Inc. | Systems and methods for memory system management based on thermal information of a memory system |
US9612648B2 (en) * | 2013-08-08 | 2017-04-04 | Qualcomm Incorporated | System and method for memory channel interleaving with selective power or performance optimization |
JP6163073B2 (ja) * | 2013-09-26 | 2017-07-12 | キヤノン株式会社 | 画像処理装置とその制御方法、及びプログラム |
US10185842B2 (en) | 2015-03-18 | 2019-01-22 | Intel Corporation | Cache and data organization for memory protection |
US9798900B2 (en) | 2015-03-26 | 2017-10-24 | Intel Corporation | Flexible counter system for memory protection |
US10528485B2 (en) | 2016-09-30 | 2020-01-07 | Intel Corporation | Method and apparatus for sharing security metadata memory space |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0981453A (ja) * | 1995-09-19 | 1997-03-28 | Hitachi Ltd | メモリ制御方法及びその実施装置 |
JPH11242629A (ja) * | 1997-10-09 | 1999-09-07 | Matsushita Electric Ind Co Ltd | メモリシステム |
JP2002170383A (ja) * | 2000-11-30 | 2002-06-14 | Fujitsu Ltd | 半導体記憶装置及び半導体装置 |
JP2003036205A (ja) * | 2001-07-24 | 2003-02-07 | Matsushita Electric Ind Co Ltd | 記憶装置 |
JP2004047051A (ja) * | 2002-05-17 | 2004-02-12 | Matsushita Electric Ind Co Ltd | メモリ制御装置および方法ならびにプログラム |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5307320A (en) * | 1992-09-23 | 1994-04-26 | Intel Corporation | High integration DRAM controller |
US5619471A (en) * | 1995-06-06 | 1997-04-08 | Apple Computer, Inc. | Memory controller for both interleaved and non-interleaved memory |
US5761695A (en) * | 1995-09-19 | 1998-06-02 | Hitachi, Ltd. | Cache memory control method and apparatus, and method and apparatus for controlling memory capable of interleave control |
US5881016A (en) * | 1997-06-13 | 1999-03-09 | Cirrus Logic, Inc. | Method and apparatus for optimizing power consumption and memory bandwidth in a video controller using SGRAM and SDRAM power reduction modes |
US6674684B1 (en) * | 2003-06-11 | 2004-01-06 | Infineon Technologies North America Corp. | Multi-bank chip compatible with a controller designed for a lesser number of banks and method of operating |
-
2004
- 2004-08-04 JP JP2004227928A patent/JP4569921B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-02 US US11/194,935 patent/US7196961B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0981453A (ja) * | 1995-09-19 | 1997-03-28 | Hitachi Ltd | メモリ制御方法及びその実施装置 |
JPH11242629A (ja) * | 1997-10-09 | 1999-09-07 | Matsushita Electric Ind Co Ltd | メモリシステム |
JP2002170383A (ja) * | 2000-11-30 | 2002-06-14 | Fujitsu Ltd | 半導体記憶装置及び半導体装置 |
JP2003036205A (ja) * | 2001-07-24 | 2003-02-07 | Matsushita Electric Ind Co Ltd | 記憶装置 |
JP2004047051A (ja) * | 2002-05-17 | 2004-02-12 | Matsushita Electric Ind Co Ltd | メモリ制御装置および方法ならびにプログラム |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11681449B2 (en) | 2012-06-19 | 2023-06-20 | Samsung Electronics Co., Ltd. | Memory system and SoC including linear address remapping logic |
US11704031B2 (en) | 2012-06-19 | 2023-07-18 | Samsung Electronics Co., Ltd. | Memory system and SOC including linear address remapping logic |
Also Published As
Publication number | Publication date |
---|---|
US7196961B2 (en) | 2007-03-27 |
US20060028880A1 (en) | 2006-02-09 |
JP2006048342A (ja) | 2006-02-16 |
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