JP4567282B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4567282B2
JP4567282B2 JP2002279547A JP2002279547A JP4567282B2 JP 4567282 B2 JP4567282 B2 JP 4567282B2 JP 2002279547 A JP2002279547 A JP 2002279547A JP 2002279547 A JP2002279547 A JP 2002279547A JP 4567282 B2 JP4567282 B2 JP 4567282B2
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Japan
Prior art keywords
layer
film
substrate
light
oxide
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Expired - Fee Related
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JP2002279547A
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English (en)
Japanese (ja)
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JP2003195787A5 (enrdf_load_stackoverflow
JP2003195787A (ja
Inventor
徹 高山
純矢 丸山
真由美 水上
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002279547A priority Critical patent/JP4567282B2/ja
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Publication of JP2003195787A5 publication Critical patent/JP2003195787A5/ja
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Publication of JP4567282B2 publication Critical patent/JP4567282B2/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2002279547A 2001-07-16 2002-09-25 発光装置の作製方法 Expired - Fee Related JP4567282B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002279547A JP4567282B2 (ja) 2001-07-16 2002-09-25 発光装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001-216018 2001-07-16
JP2001216018 2001-07-16
JP2001299620 2001-09-28
JP2001-299620 2001-09-28
JP2002279547A JP4567282B2 (ja) 2001-07-16 2002-09-25 発光装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002207536A Division JP4027740B2 (ja) 2001-07-16 2002-07-16 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009281615A Division JP5072946B2 (ja) 2001-07-16 2009-12-11 液晶表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003195787A JP2003195787A (ja) 2003-07-09
JP2003195787A5 JP2003195787A5 (enrdf_load_stackoverflow) 2005-09-29
JP4567282B2 true JP4567282B2 (ja) 2010-10-20

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Family Applications (1)

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JP2002279547A Expired - Fee Related JP4567282B2 (ja) 2001-07-16 2002-09-25 発光装置の作製方法

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JP (1) JP4567282B2 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US7241666B2 (en) * 2003-10-28 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN100583193C (zh) 2003-11-28 2010-01-20 株式会社半导体能源研究所 制造显示设备的方法
WO2005052892A1 (en) * 2003-11-28 2005-06-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
JP4741200B2 (ja) * 2004-05-28 2011-08-03 共同印刷株式会社 有機ｅｌディスプレイ及びその製造方法
WO2006104019A1 (en) 2005-03-28 2006-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and measuring method thereof
US7541671B2 (en) * 2005-03-31 2009-06-02 General Electric Company Organic electronic devices having external barrier layer
GB0618698D0 (en) * 2006-09-22 2006-11-01 Cambridge Display Tech Ltd Molecular electronic device fabrication methods and structures
EP2560459A3 (en) * 2007-02-21 2013-04-10 Ulvac, Inc. Display device, apparatus for producing display device, and method for producing display device
JP5399805B2 (ja) * 2009-08-04 2014-01-29 株式会社ジャパンディスプレイ 表示装置
JP6727762B2 (ja) * 2014-05-30 2020-07-22 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP2016031889A (ja) * 2014-07-30 2016-03-07 株式会社ジャパンディスプレイ 表示装置、及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142570A (ja) * 1993-11-12 1995-06-02 Ube Ind Ltd 複合半導体基板及びその製造方法
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
WO1998021750A1 (fr) * 1996-11-11 1998-05-22 Catalysts & Chemicals Industries Co., Ltd. Procede d'aplanissement d'un substrat, et procede de fabrication de substrats recouverts d'un film et de dispositifs a semi-conducteur
JPH1187799A (ja) * 1997-09-12 1999-03-30 Matsushita Electric Ind Co Ltd 磁気抵抗素子とその製造方法
JPH11135882A (ja) * 1997-10-28 1999-05-21 Sharp Corp 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子
JP4009923B2 (ja) * 1999-09-30 2007-11-21 セイコーエプソン株式会社 Ｅｌパネル
JP2001166301A (ja) * 1999-12-06 2001-06-22 Seiko Epson Corp バックライト内蔵型液晶表示装置及びその製造方法
JP4478268B2 (ja) * 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法

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JP2003195787A (ja) 2003-07-09

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