JP4562813B2 - 半導体ウェハー表面のフォトレジストのクリーニング及びストリッピング - Google Patents

半導体ウェハー表面のフォトレジストのクリーニング及びストリッピング Download PDF

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Publication number
JP4562813B2
JP4562813B2 JP53827097A JP53827097A JP4562813B2 JP 4562813 B2 JP4562813 B2 JP 4562813B2 JP 53827097 A JP53827097 A JP 53827097A JP 53827097 A JP53827097 A JP 53827097A JP 4562813 B2 JP4562813 B2 JP 4562813B2
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gas
ashing
resist layer
fluorine
forming
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JP53827097A
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Japanese (ja)
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JP2001501364A (ja
JP2001501364A5 (enExample
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ハン スー
リチャード エル バーシン
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Ulvac Inc
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Ulvac Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP53827097A 1996-04-24 1997-04-23 半導体ウェハー表面のフォトレジストのクリーニング及びストリッピング Expired - Lifetime JP4562813B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/637,137 1996-04-24
US08/637,137 US5908319A (en) 1996-04-24 1996-04-24 Cleaning and stripping of photoresist from surfaces of semiconductor wafers
PCT/US1997/006691 WO1997040423A2 (en) 1996-04-24 1997-04-23 Cleaning and stripping of photoresist from surfaces of semiconductor wafers

Publications (3)

Publication Number Publication Date
JP2001501364A JP2001501364A (ja) 2001-01-30
JP2001501364A5 JP2001501364A5 (enExample) 2005-01-13
JP4562813B2 true JP4562813B2 (ja) 2010-10-13

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ID=24554694

Family Applications (1)

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JP53827097A Expired - Lifetime JP4562813B2 (ja) 1996-04-24 1997-04-23 半導体ウェハー表面のフォトレジストのクリーニング及びストリッピング

Country Status (3)

Country Link
US (1) US5908319A (enExample)
JP (1) JP4562813B2 (enExample)
WO (1) WO1997040423A2 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795831A (en) * 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US6026762A (en) * 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US5980770A (en) * 1998-04-16 1999-11-09 Siemens Aktiengesellschaft Removal of post-RIE polymer on Al/Cu metal line
US6218084B1 (en) * 1998-12-15 2001-04-17 United Microelectronics Corp. Method for removing photoresist layer
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6492186B1 (en) 1999-08-05 2002-12-10 Eaton Corporation Method for detecting an endpoint for an oxygen free plasma process
JP2001077086A (ja) * 1999-08-31 2001-03-23 Oki Electric Ind Co Ltd 半導体装置のドライエッチング方法
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6547458B1 (en) 1999-11-24 2003-04-15 Axcelis Technologies, Inc. Optimized optical system design for endpoint detection
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
US6852636B1 (en) 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
DE10024699A1 (de) * 2000-05-18 2001-11-29 Bosch Gmbh Robert Plasmaätzanlage
US6526996B1 (en) 2000-06-12 2003-03-04 Promos Technologies, Inc. Dry clean method instead of traditional wet clean after metal etch
US6914017B1 (en) * 2000-08-30 2005-07-05 Micron Technology, Inc. Residue free overlay target
DE10050047B4 (de) * 2000-10-10 2006-07-13 Promos Technologies, Inc. Trockenreinigungsverfahren statt der herkömmlichen Nassreinigung nach der Ätzung von Metallen
TW455942B (en) * 2000-10-31 2001-09-21 Promos Technologies Inc Via etch post-clean process
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US6846749B1 (en) 2001-06-25 2005-01-25 Advanced Micro Devices, Inc. N-containing plasma etch process with reduced resist poisoning
WO2003021642A2 (en) * 2001-08-31 2003-03-13 Applied Materials, Inc. Method and apparatus for processing a wafer
KR100500932B1 (ko) * 2001-09-28 2005-07-14 주식회사 하이닉스반도체 비아 콘택 식각 후의 감광막 제거 및 건식 세정 방법
US7101260B2 (en) * 2002-07-29 2006-09-05 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7066789B2 (en) * 2002-07-29 2006-06-27 Manoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US6764385B2 (en) * 2002-07-29 2004-07-20 Nanoclean Technologies, Inc. Methods for resist stripping and cleaning surfaces substantially free of contaminants
US7297286B2 (en) * 2002-07-29 2007-11-20 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7134941B2 (en) * 2002-07-29 2006-11-14 Nanoclean Technologies, Inc. Methods for residue removal and corrosion prevention in a post-metal etch process
US6693043B1 (en) * 2002-09-20 2004-02-17 Novellus Systems, Inc. Method for removing photoresist from low-k films in a downstream plasma system
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US7157375B2 (en) * 2004-08-25 2007-01-02 Agere Systems, Inc. Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching
US8399360B1 (en) * 2005-11-17 2013-03-19 Cypress Semiconductor Corporation Process for post contact-etch clean
US8236703B2 (en) * 2007-09-12 2012-08-07 Texas Instruments Incorporated Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3140784A1 (de) * 1981-10-14 1983-04-28 Freudenberg, Carl, 6940 Weinheim "saugfaehiges flaechengebilde und verfahren zu seiner herstellung"
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4562240A (en) * 1984-12-20 1985-12-31 Ashland Oil, Inc. Bicyclic amide acetal/polyol/polyisocyanate polymers
JPH0770524B2 (ja) * 1987-08-19 1995-07-31 富士通株式会社 半導体装置の製造方法
US5198634A (en) * 1990-05-21 1993-03-30 Mattson Brad S Plasma contamination removal process
US5174856A (en) * 1991-08-26 1992-12-29 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch
JPH05206069A (ja) * 1992-01-29 1993-08-13 Fujitsu Ltd プラズマエッチング法及びプラズマエッチング装置
JPH05275326A (ja) * 1992-03-30 1993-10-22 Sumitomo Metal Ind Ltd レジストのアッシング方法
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法
US5382316A (en) * 1993-10-29 1995-01-17 Applied Materials, Inc. Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure
JP3529849B2 (ja) * 1994-05-23 2004-05-24 富士通株式会社 半導体装置の製造方法
JPH07331460A (ja) * 1994-06-02 1995-12-19 Nippon Telegr & Teleph Corp <Ntt> ドライエッチング方法

Also Published As

Publication number Publication date
JP2001501364A (ja) 2001-01-30
US5908319A (en) 1999-06-01
WO1997040423A3 (en) 1997-11-27
WO1997040423A2 (en) 1997-10-30

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