JP2001501364A5 - - Google Patents

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Publication number
JP2001501364A5
JP2001501364A5 JP1997538270A JP53827097A JP2001501364A5 JP 2001501364 A5 JP2001501364 A5 JP 2001501364A5 JP 1997538270 A JP1997538270 A JP 1997538270A JP 53827097 A JP53827097 A JP 53827097A JP 2001501364 A5 JP2001501364 A5 JP 2001501364A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997538270A
Other languages
English (en)
Japanese (ja)
Other versions
JP4562813B2 (ja
JP2001501364A (ja
Filing date
Publication date
Priority claimed from US08/637,137 external-priority patent/US5908319A/en
Application filed filed Critical
Publication of JP2001501364A publication Critical patent/JP2001501364A/ja
Publication of JP2001501364A5 publication Critical patent/JP2001501364A5/ja
Application granted granted Critical
Publication of JP4562813B2 publication Critical patent/JP4562813B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP53827097A 1996-04-24 1997-04-23 半導体ウェハー表面のフォトレジストのクリーニング及びストリッピング Expired - Lifetime JP4562813B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/637,137 US5908319A (en) 1996-04-24 1996-04-24 Cleaning and stripping of photoresist from surfaces of semiconductor wafers
US08/637,137 1996-04-24
PCT/US1997/006691 WO1997040423A2 (en) 1996-04-24 1997-04-23 Cleaning and stripping of photoresist from surfaces of semiconductor wafers

Publications (3)

Publication Number Publication Date
JP2001501364A JP2001501364A (ja) 2001-01-30
JP2001501364A5 true JP2001501364A5 (enExample) 2005-01-13
JP4562813B2 JP4562813B2 (ja) 2010-10-13

Family

ID=24554694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53827097A Expired - Lifetime JP4562813B2 (ja) 1996-04-24 1997-04-23 半導体ウェハー表面のフォトレジストのクリーニング及びストリッピング

Country Status (3)

Country Link
US (1) US5908319A (enExample)
JP (1) JP4562813B2 (enExample)
WO (1) WO1997040423A2 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795831A (en) * 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US6026762A (en) * 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US5980770A (en) * 1998-04-16 1999-11-09 Siemens Aktiengesellschaft Removal of post-RIE polymer on Al/Cu metal line
US6218084B1 (en) * 1998-12-15 2001-04-17 United Microelectronics Corp. Method for removing photoresist layer
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6492186B1 (en) 1999-08-05 2002-12-10 Eaton Corporation Method for detecting an endpoint for an oxygen free plasma process
JP2001077086A (ja) * 1999-08-31 2001-03-23 Oki Electric Ind Co Ltd 半導体装置のドライエッチング方法
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6547458B1 (en) 1999-11-24 2003-04-15 Axcelis Technologies, Inc. Optimized optical system design for endpoint detection
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
US6852636B1 (en) 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
DE10024699A1 (de) * 2000-05-18 2001-11-29 Bosch Gmbh Robert Plasmaätzanlage
US6526996B1 (en) 2000-06-12 2003-03-04 Promos Technologies, Inc. Dry clean method instead of traditional wet clean after metal etch
US6914017B1 (en) * 2000-08-30 2005-07-05 Micron Technology, Inc. Residue free overlay target
DE10050047B4 (de) * 2000-10-10 2006-07-13 Promos Technologies, Inc. Trockenreinigungsverfahren statt der herkömmlichen Nassreinigung nach der Ätzung von Metallen
TW455942B (en) * 2000-10-31 2001-09-21 Promos Technologies Inc Via etch post-clean process
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US6846749B1 (en) 2001-06-25 2005-01-25 Advanced Micro Devices, Inc. N-containing plasma etch process with reduced resist poisoning
WO2003021642A2 (en) * 2001-08-31 2003-03-13 Applied Materials, Inc. Method and apparatus for processing a wafer
KR100500932B1 (ko) * 2001-09-28 2005-07-14 주식회사 하이닉스반도체 비아 콘택 식각 후의 감광막 제거 및 건식 세정 방법
US7066789B2 (en) * 2002-07-29 2006-06-27 Manoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7134941B2 (en) * 2002-07-29 2006-11-14 Nanoclean Technologies, Inc. Methods for residue removal and corrosion prevention in a post-metal etch process
US7101260B2 (en) * 2002-07-29 2006-09-05 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7297286B2 (en) * 2002-07-29 2007-11-20 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US6764385B2 (en) 2002-07-29 2004-07-20 Nanoclean Technologies, Inc. Methods for resist stripping and cleaning surfaces substantially free of contaminants
US6693043B1 (en) * 2002-09-20 2004-02-17 Novellus Systems, Inc. Method for removing photoresist from low-k films in a downstream plasma system
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US7157375B2 (en) * 2004-08-25 2007-01-02 Agere Systems, Inc. Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching
US8399360B1 (en) * 2005-11-17 2013-03-19 Cypress Semiconductor Corporation Process for post contact-etch clean
US8236703B2 (en) * 2007-09-12 2012-08-07 Texas Instruments Incorporated Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3140784A1 (de) * 1981-10-14 1983-04-28 Freudenberg, Carl, 6940 Weinheim "saugfaehiges flaechengebilde und verfahren zu seiner herstellung"
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4562240A (en) * 1984-12-20 1985-12-31 Ashland Oil, Inc. Bicyclic amide acetal/polyol/polyisocyanate polymers
JPH0770524B2 (ja) * 1987-08-19 1995-07-31 富士通株式会社 半導体装置の製造方法
US5198634A (en) * 1990-05-21 1993-03-30 Mattson Brad S Plasma contamination removal process
US5174856A (en) * 1991-08-26 1992-12-29 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from previous metal etch
JPH05206069A (ja) * 1992-01-29 1993-08-13 Fujitsu Ltd プラズマエッチング法及びプラズマエッチング装置
JPH05275326A (ja) * 1992-03-30 1993-10-22 Sumitomo Metal Ind Ltd レジストのアッシング方法
JP3391410B2 (ja) * 1993-09-17 2003-03-31 富士通株式会社 レジストマスクの除去方法
US5382316A (en) * 1993-10-29 1995-01-17 Applied Materials, Inc. Process for simultaneous removal of photoresist and polysilicon/polycide etch residues from an integrated circuit structure
JP3529849B2 (ja) * 1994-05-23 2004-05-24 富士通株式会社 半導体装置の製造方法
JPH07331460A (ja) * 1994-06-02 1995-12-19 Nippon Telegr & Teleph Corp <Ntt> ドライエッチング方法

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