JP4561072B2 - Ｍｅｍｓスイッチを有する半導体装置 - Google Patents

Ｍｅｍｓスイッチを有する半導体装置 Download PDF

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Publication number
JP4561072B2
JP4561072B2 JP2003339156A JP2003339156A JP4561072B2 JP 4561072 B2 JP4561072 B2 JP 4561072B2 JP 2003339156 A JP2003339156 A JP 2003339156A JP 2003339156 A JP2003339156 A JP 2003339156A JP 4561072 B2 JP4561072 B2 JP 4561072B2
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JP
Japan
Prior art keywords
contact
electrode
fixed
movable
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003339156A
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English (en)
Japanese (ja)
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JP2005109071A (ja
JP2005109071A5 (enExample
Inventor
康 後藤
俊太郎 町田
夏樹 横山
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2003339156A priority Critical patent/JP4561072B2/ja
Priority to US10/788,369 priority patent/US7045843B2/en
Publication of JP2005109071A publication Critical patent/JP2005109071A/ja
Publication of JP2005109071A5 publication Critical patent/JP2005109071A5/ja
Application granted granted Critical
Publication of JP4561072B2 publication Critical patent/JP4561072B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0042—Bistable switches, i.e. having two stable positions requiring only actuating energy for switching between them, e.g. with snap membrane or by permanent magnet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0063—Switches making use of microelectromechanical systems [MEMS] having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Micromachines (AREA)
JP2003339156A 2003-09-30 2003-09-30 Ｍｅｍｓスイッチを有する半導体装置 Expired - Fee Related JP4561072B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003339156A JP4561072B2 (ja) 2003-09-30 2003-09-30 Ｍｅｍｓスイッチを有する半導体装置
US10/788,369 US7045843B2 (en) 2003-09-30 2004-03-01 Semiconductor device using MEMS switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003339156A JP4561072B2 (ja) 2003-09-30 2003-09-30 Ｍｅｍｓスイッチを有する半導体装置

Publications (3)

Publication Number Publication Date
JP2005109071A JP2005109071A (ja) 2005-04-21
JP2005109071A5 JP2005109071A5 (enExample) 2006-02-09
JP4561072B2 true JP4561072B2 (ja) 2010-10-13

Family

ID=34373343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003339156A Expired - Fee Related JP4561072B2 (ja) 2003-09-30 2003-09-30 Ｍｅｍｓスイッチを有する半導体装置

Country Status (2)

Country Link
US (1) US7045843B2 (enExample)
JP (1) JP4561072B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100803690B1 (ko) * 2006-08-10 2008-02-20 삼성전자주식회사 전기적- 기계적 비휘발성 메모리 장치 및 그 제조 방법.
US7511994B2 (en) * 2006-08-31 2009-03-31 Micron Technology, Inc. MEM suspended gate non-volatile memory
KR100781972B1 (ko) * 2006-09-18 2007-12-06 삼성전자주식회사 메모리 소자 및 그의 제조방법
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
KR100842730B1 (ko) 2007-01-16 2008-07-01 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
KR100882148B1 (ko) * 2007-06-22 2009-02-06 한국과학기술원 정전 구동기, 그 구동방법 및 이를 이용한 응용소자
KR100867667B1 (ko) * 2008-04-18 2008-11-10 주식회사 엔아이씨테크 마이크로 구조물 및 그 제조방법
US8451077B2 (en) 2008-04-22 2013-05-28 International Business Machines Corporation MEMS switches with reduced switching voltage and methods of manufacture
US8916944B2 (en) * 2010-03-26 2014-12-23 Elmos Semiconductor Ag Stress-sensitive micro-electromechanical device and use thereof
US8685778B2 (en) 2010-06-25 2014-04-01 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
US8436638B2 (en) 2010-12-10 2013-05-07 International Business Machines Corporation Switch to perform non-destructive and secure disablement of IC functionality utilizing MEMS and method thereof
US20130299328A1 (en) * 2012-05-14 2013-11-14 Raytheon Company Micro electro mechanical system (mems) microwave switch structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59509883D1 (de) 1995-08-09 2002-01-10 Infineon Technologies Ag Speichervorrichtung und Herstellungsverfahren
JPH09199376A (ja) * 1996-01-18 1997-07-31 Murata Mfg Co Ltd 可変容量コンデンサ
JP3725688B2 (ja) * 1998-01-20 2005-12-14 日本電信電話株式会社 論理演算装置
US6124650A (en) 1999-10-15 2000-09-26 Lucent Technologies Inc. Non-volatile MEMS micro-relays using magnetic actuators
US6625047B2 (en) * 2000-12-31 2003-09-23 Texas Instruments Incorporated Micromechanical memory element

Also Published As

Publication number Publication date
US7045843B2 (en) 2006-05-16
JP2005109071A (ja) 2005-04-21
US20050067621A1 (en) 2005-03-31

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