JP4559036B2 - 撮影アレイ及びその製造方法 - Google Patents

撮影アレイ及びその製造方法 Download PDF

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Publication number
JP4559036B2
JP4559036B2 JP2003098711A JP2003098711A JP4559036B2 JP 4559036 B2 JP4559036 B2 JP 4559036B2 JP 2003098711 A JP2003098711 A JP 2003098711A JP 2003098711 A JP2003098711 A JP 2003098711A JP 4559036 B2 JP4559036 B2 JP 4559036B2
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Japan
Prior art keywords
layer
capacitor
tft
electrode
dielectric layer
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Expired - Fee Related
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JP2003098711A
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English (en)
Japanese (ja)
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JP2004006781A5 (enExample
JP2004006781A (ja
Inventor
チー−アン・リー
ジョージ・エドワード・ポッシン
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
JP2003098711A 2002-04-03 2003-04-02 撮影アレイ及びその製造方法 Expired - Fee Related JP4559036B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/115,829 US6559506B1 (en) 2002-04-03 2002-04-03 Imaging array and methods for fabricating same

Publications (3)

Publication Number Publication Date
JP2004006781A JP2004006781A (ja) 2004-01-08
JP2004006781A5 JP2004006781A5 (enExample) 2006-05-18
JP4559036B2 true JP4559036B2 (ja) 2010-10-06

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ID=22363640

Family Applications (1)

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JP2003098711A Expired - Fee Related JP4559036B2 (ja) 2002-04-03 2003-04-02 撮影アレイ及びその製造方法

Country Status (4)

Country Link
US (1) US6559506B1 (enExample)
JP (1) JP4559036B2 (enExample)
DE (1) DE10315036B4 (enExample)
FR (1) FR2838240B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777685B2 (en) * 2002-04-03 2004-08-17 General Electric Company Imaging array and methods for fabricating same
US6740884B2 (en) * 2002-04-03 2004-05-25 General Electric Company Imaging array and methods for fabricating same
US7145152B2 (en) * 2003-10-14 2006-12-05 General Electric Company Storage capacitor design for a solid state imager
EP1854141A1 (en) * 2005-02-28 2007-11-14 OC Oerlikon Balzers AG Method of fabricating an image sensor device with reduced pixel cross-talk
US8053777B2 (en) * 2005-03-31 2011-11-08 General Electric Company Thin film transistors for imaging system and method of making the same
TWI355106B (en) * 2007-05-07 2011-12-21 Chunghwa Picture Tubes Ltd Organic photodetector and fabricating method of or
JP5286691B2 (ja) * 2007-05-14 2013-09-11 三菱電機株式会社 フォトセンサー
TWI347682B (en) * 2007-09-28 2011-08-21 Prime View Int Co Ltd A photo sensor and a method for manufacturing thereof
US9318614B2 (en) * 2012-08-02 2016-04-19 Cbrite Inc. Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption
US20130240875A1 (en) * 2012-03-14 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102800750B (zh) * 2012-07-26 2015-07-01 北京京东方光电科技有限公司 一种传感器的制造方法
WO2016010292A1 (en) * 2014-07-15 2016-01-21 Vieworks Co., Ltd. Radiation detector
CN109300919B (zh) * 2018-10-15 2020-09-29 上海天马微电子有限公司 Micro LED显示基板及其制作方法、显示装置

Family Cites Families (32)

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Publication number Priority date Publication date Assignee Title
US4725890A (en) 1986-07-15 1988-02-16 Ovonic Imaging Systems, Inc. Flexible array of photosensitive elements
US4739414A (en) 1986-07-15 1988-04-19 Ovonic Imaging Systems, Inc. Large area array of thin film photosensitive elements for image detection
US4889983A (en) 1987-11-24 1989-12-26 Mitsubishi Denki Kabushiki Kaisha Image sensor and production method thereof
JPH0423470A (ja) 1990-05-18 1992-01-27 Fuji Xerox Co Ltd イメージセンサ
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5399884A (en) 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
US5587591A (en) 1993-12-29 1996-12-24 General Electric Company Solid state fluoroscopic radiation imager with thin film transistor addressable array
US5435608A (en) 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
CA2193649C (en) 1994-07-27 2003-01-21 Zhong Shou Huang Radiation imaging panel
US5532180A (en) 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
US5614727A (en) 1995-06-06 1997-03-25 International Business Machines Corporation Thin film diode having large current capability with low turn-on voltages for integrated devices
US5631473A (en) 1995-06-21 1997-05-20 General Electric Company Solid state array with supplemental dielectric layer crossover structure
EP0762505A3 (en) 1995-08-28 1999-02-03 Canon Kabushiki Kaisha Apparatus for detecting radiation and method for manufacturing such apparatus
US5610404A (en) 1995-09-05 1997-03-11 General Electric Company Flat panel imaging device with ground plane electrode
US5610403A (en) 1995-09-05 1997-03-11 General Electric Company Solid state radiation imager with gate electrode plane shield wires
US5648654A (en) 1995-12-21 1997-07-15 General Electric Company Flat panel imaging device with patterned common electrode
US5777355A (en) 1996-12-23 1998-07-07 General Electric Company Radiation imager with discontinuous dielectric
US5920070A (en) 1996-11-27 1999-07-06 General Electric Company Solid state area x-ray detector with adjustable bias
JP3729953B2 (ja) * 1996-12-02 2005-12-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｔｆｔアレイ基板とその製法
US5736732A (en) 1996-12-23 1998-04-07 General Electric Company Induced charge prevention in semiconductor imaging devices
US5838054A (en) 1996-12-23 1998-11-17 General Electric Company Contact pads for radiation imagers
US6307214B1 (en) * 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
US6167110A (en) 1997-11-03 2000-12-26 General Electric Company High voltage x-ray and conventional radiography imaging apparatus and method
US6031234A (en) 1997-12-08 2000-02-29 General Electric Company High resolution radiation imager
US6025599A (en) 1997-12-09 2000-02-15 Direct Radiography Corp. Image capture element
TWI226470B (en) * 1998-01-19 2005-01-11 Hitachi Ltd LCD device
JP3489782B2 (ja) * 1999-02-24 2004-01-26 株式会社東芝 Ｘ線撮像装置
US6243441B1 (en) 1999-07-13 2001-06-05 Edge Medical Devices Active matrix detector for X-ray imaging
US6307322B1 (en) * 1999-12-28 2001-10-23 Sarnoff Corporation Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage
US6774397B2 (en) * 2000-05-12 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2002033331A (ja) * 2000-05-12 2002-01-31 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Also Published As

Publication number Publication date
FR2838240A1 (fr) 2003-10-10
FR2838240B1 (fr) 2007-05-11
DE10315036A1 (de) 2003-11-13
DE10315036B4 (de) 2014-11-20
US6559506B1 (en) 2003-05-06
JP2004006781A (ja) 2004-01-08

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