JP4555951B2 - ＭＥＭＳ（Ｍｉｃｒｏ−Ｅｌｅｃｔｒｏ−Ｍｅｃｈａｎｉｃａｌ−Ｓｙｓｔｅｍ）素子のアレイの駆動 - Google Patents

ＭＥＭＳ（Ｍｉｃｒｏ−Ｅｌｅｃｔｒｏ−Ｍｅｃｈａｎｉｃａｌ−Ｓｙｓｔｅｍ）素子のアレイの駆動 Download PDF

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Publication number
JP4555951B2
JP4555951B2 JP2004558933A JP2004558933A JP4555951B2 JP 4555951 B2 JP4555951 B2 JP 4555951B2 JP 2004558933 A JP2004558933 A JP 2004558933A JP 2004558933 A JP2004558933 A JP 2004558933A JP 4555951 B2 JP4555951 B2 JP 4555951B2
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Japan
Prior art keywords
mems
array
voltage
state
elements
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Expired - Fee Related
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JP2004558933A
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English (en)
Japanese (ja)
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JP2006509643A (ja
Inventor
テオドール、ヘー．エス．エム．リィクス
マルコ、マタース
ヨゼフ、テー．エム．ファン、ベーク
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TDK Electronics AG
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Epcos AG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/40—Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
JP2004558933A 2002-12-10 2003-12-01 ＭＥＭＳ（Ｍｉｃｒｏ−Ｅｌｅｃｔｒｏ−Ｍｅｃｈａｎｉｃａｌ−Ｓｙｓｔｅｍ）素子のアレイの駆動 Expired - Fee Related JP4555951B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02080219 2002-12-10
PCT/IB2003/005590 WO2004054088A2 (fr) 2002-12-10 2003-12-01 Commande d'un reseau d'elements mems (microsystemes electromecaniques)

Publications (2)

Publication Number Publication Date
JP2006509643A JP2006509643A (ja) 2006-03-23
JP4555951B2 true JP4555951B2 (ja) 2010-10-06

Family

ID=32479772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004558933A Expired - Fee Related JP4555951B2 (ja) 2002-12-10 2003-12-01 ＭＥＭＳ（Ｍｉｃｒｏ−Ｅｌｅｃｔｒｏ−Ｍｅｃｈａｎｉｃａｌ−Ｓｙｓｔｅｍ）素子のアレイの駆動

Country Status (9)

Country Link
US (1) US20060050350A1 (fr)
EP (1) EP1573894B1 (fr)
JP (1) JP4555951B2 (fr)
KR (1) KR101140689B1 (fr)
CN (1) CN1723606B (fr)
AT (1) ATE516625T1 (fr)
AU (1) AU2003283676A1 (fr)
TW (1) TW200507444A (fr)
WO (1) WO2004054088A2 (fr)

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WO1999052006A2 (fr) 1998-04-08 1999-10-14 Etalon, Inc. Modulation interferometrique de rayonnement
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7709285B2 (en) * 2003-10-31 2010-05-04 Epcos Ag Method of manufacturing a MEMS device and MEMS device
US7499208B2 (en) 2004-08-27 2009-03-03 Udc, Llc Current mode display driver circuit realization feature
US7532195B2 (en) 2004-09-27 2009-05-12 Idc, Llc Method and system for reducing power consumption in a display
US7486429B2 (en) 2004-09-27 2009-02-03 Idc, Llc Method and device for multistate interferometric light modulation
US7310179B2 (en) 2004-09-27 2007-12-18 Idc, Llc Method and device for selective adjustment of hysteresis window
US8310441B2 (en) 2004-09-27 2012-11-13 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US7369296B2 (en) * 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7545550B2 (en) * 2004-09-27 2009-06-09 Idc, Llc Systems and methods of actuating MEMS display elements
US8203402B2 (en) 2004-10-27 2012-06-19 Epcos Ag Electronic device
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
EP2002511A4 (fr) * 2006-03-08 2012-02-29 Wispry Inc Réseaux d'adaptation d'impédance accordables et systèmes d'adaptation de diplex eur accordables
US7957589B2 (en) 2007-01-25 2011-06-07 Qualcomm Mems Technologies, Inc. Arbitrary power function using logarithm lookup table
US20090002069A1 (en) * 2007-06-27 2009-01-01 Ntt Docomo, Inc. Variable circuit, communication apparatus, mobile communication apparatus and communication system
KR20100121498A (ko) * 2008-02-11 2010-11-17 퀄컴 엠이엠스 테크놀로지스, 인크. 디스플레이 구동 체계가 통합된 표시소자의 감지, 측정 혹은 평가 방법 및 장치, 그리고 이를 이용한 시스템 및 용도
US8258800B2 (en) * 2008-02-11 2012-09-04 Qualcomm Mems Technologies, Inc. Methods for measurement and characterization of interferometric modulators
WO2009102581A1 (fr) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Détection d'impédance pour déterminer l'état du pixel dans un réseau d'affichage adressé passivement
WO2009134501A2 (fr) * 2008-02-11 2009-11-05 Qualcomm Mems Technologies, Inc. Procédés de mesure et de caractérisation de modulateurs interférométriques
US20090201282A1 (en) * 2008-02-11 2009-08-13 Qualcomm Mems Technologies, Inc Methods of tuning interferometric modulator displays
US7643305B2 (en) 2008-03-07 2010-01-05 Qualcomm Mems Technologies, Inc. System and method of preventing damage to metal traces of flexible printed circuits
JP5180683B2 (ja) * 2008-06-02 2013-04-10 太陽誘電株式会社 スイッチトキャパシタ
US7782522B2 (en) 2008-07-17 2010-08-24 Qualcomm Mems Technologies, Inc. Encapsulation methods for interferometric modulator and MEMS devices
WO2010011733A2 (fr) 2008-07-22 2010-01-28 Massachusetts Institute Of Technology Commutateurs électromécaniques et leurs procédés d’utilisation
US8405649B2 (en) 2009-03-27 2013-03-26 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
DE102010014101B4 (de) 2010-04-07 2016-06-09 Epcos Ag Hybridschaltung mit einstellbarer Impedanz
US8253435B2 (en) * 2010-09-13 2012-08-28 Texas Instruments Incorporated Methods and apparatus to detect voltage conditions of power supplies
KR101383760B1 (ko) 2012-07-23 2014-04-10 서강대학교산학협력단 수평 구동형 전기기계 메모리 소자 및 그 제조방법

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US4242736A (en) * 1976-10-29 1980-12-30 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4674180A (en) * 1984-05-01 1987-06-23 The Foxboro Company Method of making a micromechanical electric shunt
US6674562B1 (en) * 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US7550794B2 (en) * 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
DE4437261C1 (de) * 1994-10-18 1995-10-19 Siemens Ag Mikromechanisches elektrostatisches Relais
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
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US5872489A (en) * 1997-04-28 1999-02-16 Rockwell Science Center, Llc Integrated tunable inductance network and method
US5880921A (en) * 1997-04-28 1999-03-09 Rockwell Science Center, Llc Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology
JP3643508B2 (ja) * 1999-09-28 2005-04-27 株式会社東芝 可動フィルム型表示装置
FI109155B (fi) * 2000-04-13 2002-05-31 Nokia Corp Menetelmä ja järjestely mikromekaanisen elementin ohjaamiseksi
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US6972881B1 (en) * 2002-11-21 2005-12-06 Nuelight Corp. Micro-electro-mechanical switch (MEMS) display panel with on-glass column multiplexers using MEMS as mux elements

Also Published As

Publication number Publication date
EP1573894A2 (fr) 2005-09-14
ATE516625T1 (de) 2011-07-15
AU2003283676A1 (en) 2004-06-30
JP2006509643A (ja) 2006-03-23
WO2004054088A3 (fr) 2004-12-02
WO2004054088A2 (fr) 2004-06-24
KR101140689B1 (ko) 2012-05-03
CN1723606B (zh) 2011-01-12
TW200507444A (en) 2005-02-16
EP1573894B1 (fr) 2011-07-13
KR20050085452A (ko) 2005-08-29
CN1723606A (zh) 2006-01-18
US20060050350A1 (en) 2006-03-09

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