JP4188805B2 - Mems可変インダクタ及びキャパシタ - Google Patents
Mems可変インダクタ及びキャパシタ Download PDFInfo
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- JP4188805B2 JP4188805B2 JP2003385623A JP2003385623A JP4188805B2 JP 4188805 B2 JP4188805 B2 JP 4188805B2 JP 2003385623 A JP2003385623 A JP 2003385623A JP 2003385623 A JP2003385623 A JP 2003385623A JP 4188805 B2 JP4188805 B2 JP 4188805B2
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- Prior art keywords
- inductor
- substrate
- capacitor
- variable
- movable
- Prior art date
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- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims description 80
- 239000000758 substrate Substances 0.000 claims description 96
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 238000007667 floating Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/04—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode
- H01G5/14—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode due to longitudinal movement of electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
- H01F21/04—Variable inductances or transformers of the signal type continuously variable, e.g. variometers by relative movement of turns or parts of windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F2007/068—Electromagnets; Actuators including electromagnets using printed circuit coils
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H2007/006—MEMS
- H03H2007/008—MEMS the MEMS being trimmable
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
M=K√(LA*LB) (1)
VA=LA*DIA/DT+M*DIB/DT (2)
VB=M*DIA/DT+LB*DIB/DT=0(短絡により) (3)
DIB/DT=−M/LB*DIA/DT (4)
VA=(LA−M2/LB)*DIA/DT (5)
LEFF=VA/(DIA/DT)
=LA−M2/LB
=LA−K2LA
=(1−K2)*LA (6)
但し、Mは、相互インダクタンスの定義であり、Kは、結合係数であり、IA及びVAは、基板インダクタ34上の電流及び端子電圧であり、IB及びVBは、可動インダクタ36上の電流及び電圧である。従って、インダクタ結合の有効値LEFFは、基板インダクタ34自体の自己インダクタンスの(1−K2)倍である。Kは重畳に応じて0から1まで変動することが可能であるから、可変インダクタンスは0からLAまで変動可能となる。
CEFF
=(ε0*A1/D)(ε0*A2/D)(ε0*A1/D+ε0*A2/D) (7)
但し、A1は第1基板キャパシタパッド54と可動キャパシタパッド58との重畳部分間に形成されるキャパシタプレートの面積、A2は第2基板キャパシタパッド56と可動キャパシタパッド58との重畳部分間に形成されるキャパシタプレートの面積、Dはキャパシタプレート間の距離であり、ε0はプレート間の絶縁体(例えば、空気)の誘電定数である。キャパシタンスは、可動パッド58が基板パッド54及び56を露出した時に最小であり、可動パッド58が基板パッド54及び56を完全に覆った時に最大となる。キャパシタンスの変化は、基板パッド54及び56と可動キャパシタパッド58との間の間隙が基板パッド54及び56の寸法及び分離に比較して小さいことから、大きくなる。
18−可動誘電プレート; 20−レール; 22−側壁22;
24、26−保持タブ; 30−MEMS装置30; 32−基板;
34−基板インダクタ; 36−面状インダクタ; 38−摺動誘電プレート;
40−リニアアクチュエータ制コントロール装置; 42−レール;
46−壁; 50−MEMS装置; 52−基板; 54−第1基板キャパシタパッド;
56−第2基板キャパシタパッド; 58−可動キャパシタパッド58;
60−摺動誘電プレート; 64−レール64; 66−保持タブ; 68−壁;
82−基板インダクタ; 84−可動インダクタ; 86−可動誘電プレート86;
88−レール; 102−第3電極; 104−第2電極; 106−第1電極;
108−基板; 120−誘電プレート; 122−誘電領域;
124−第1電極パターン; 126−第2電極パターン; 128−第3電極パターン;
160−プッシュロッド−ツース式リニアアクチュエータ装置;
162−誘電プレート: 164−歯; 166−歯;
168−第1のプッシュロッド−ビーム装置;
170−第2のプッシュロッド−ビーム装置;
190−プッシュロッド−ビーム装置; 194−電極; 196−アンカー;
198−第1ビーム; 200−第2ビーム;202−プッシュロッド;
204−基板; 228−MEMS同調自在フィルタ; 220−シンセサイザ;
224−マルチプレクサ; 222−デジタル波形発生装置;
226−デジタルアナログ(D/A)変換装置;
228−MEMS同調自在フィルタ228; 240−受信機;
244−MEMS同調自在フィルタ;
248−アナログ/デジタル(A/D)変換装置
Claims (8)
- 可変受動部品であって、
ほぼ平らな上面を有した基板上に配置された第1導電部と、
基板の上面にほぼ平行な平面内で移動可能なプレート上に配置された第2導電部であって、該第2導電部及び第1導電部との間に一定の間隙を維持するようにされ、第1導電部に対する第2導電部の重畳により、可変受動部品の部品値を変動させるようにした、第2導電部と、
複数の重畳部分の間で誘電プレートを、該誘電プレート上の電極との直接接続を必要とせずに移動させるリニア・アクチュエータであって、3相ステッパ−アクチュエータ、又はプッシュロッド−ツース型リニアアクチュエータからなるリニア・アクチュエータと
を備えていることを特徴とする可変受動部品。 - 請求項1記載の可変受動部品において、該可変受動部品がインダクタ部品であることを特徴とする可変受動部品。
- 請求項2記載の可変受動部品において、第1導電部が回路に接続された第1インダクタであり、第2導電部が短絡された端を有する第2インダクタであることを特徴とする可変受動部品。
- 請求項3記載の可変受動部品において、可変インダクタのインダクタンスが、第1インダクタ上における第2インダクタの重畳量に基づいており、第1インダクタに対する第2インダクタの重畳量が、第1インダクタ及び第2インダクタ間の磁気結合を変動させるようにしたことを特徴とする可変受動部品。
- 請求項1記載の可変受動部品において、可変受動部品が可変キャパシタであることを特徴とする可変受動部品。
- 請求項5記載の可変受動部品において、第1導電部は、第1基板キャパシタパッド及び第2基板キャパシタパッドであり、第2導電部は、第1基板キャパシタパッド及び第2基板キャパシタパッドに重畳する可動キャパシタパッドであり、第1基板キャパシタパッド及び可動キャパシタパッドが、第1キャパシタを形成し、第2基板キャパシタパッド及び可動キャパシタパッドが、第1キャパシタと直列な第2キャパシタであり、第1及び第2キャパシタパッドに対する可動キャパシタパッドの重畳量で、可動キャパシタパッドと第1及び第2キャパシタパッドとの間の電界領域及び可変キャパシタのキャパシタンスを変動させるようにしたことを特徴とする可変受動部品。
- 請求項1記載の可変受動部品において、該部品は更に、複数の重畳部分の間で誘電プレートを移動させる手段を備えることを特徴とする可変受動部品。
- マイクロ電気機械式装置であって、請求項1記載の可変受動部品を備えていることを特徴とするマイクロ電気機械式装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/402,032 US6856499B2 (en) | 2003-03-28 | 2003-03-28 | MEMS variable inductor and capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004304154A JP2004304154A (ja) | 2004-10-28 |
JP4188805B2 true JP4188805B2 (ja) | 2008-12-03 |
Family
ID=29780554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003385623A Expired - Fee Related JP4188805B2 (ja) | 2003-03-28 | 2003-11-14 | Mems可変インダクタ及びキャパシタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US6856499B2 (ja) |
EP (1) | EP1463070A3 (ja) |
JP (1) | JP4188805B2 (ja) |
NO (1) | NO20035065L (ja) |
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JP3890952B2 (ja) * | 2001-10-18 | 2007-03-07 | ソニー株式会社 | 容量可変型キャパシタ装置 |
GB0214206D0 (en) * | 2002-06-19 | 2002-07-31 | Filtronic Compound Semiconduct | A micro-electromechanical variable capacitor |
US8058950B1 (en) * | 2003-07-22 | 2011-11-15 | Daniel Senderowicz | Highly selective passive filters using low-Q planar capacitors and inductors |
JP4412977B2 (ja) * | 2003-11-17 | 2010-02-10 | 京セラ株式会社 | 可変コンデンサ |
KR100549003B1 (ko) * | 2004-02-04 | 2006-02-02 | 삼성전자주식회사 | 넓은 튜닝 범위를 갖는 멤스 튜너블 커패시터 및 그것을제조하는 방법 |
CN1251255C (zh) * | 2004-05-10 | 2006-04-12 | 阎跃军 | 可调电感器 |
CN101390248B (zh) * | 2004-12-09 | 2012-12-05 | 维斯普瑞公司 | 零极点元件及相关系统和方法 |
JP4668719B2 (ja) * | 2005-07-25 | 2011-04-13 | Okiセミコンダクタ株式会社 | インダクタの特性調整方法 |
KR100794796B1 (ko) * | 2005-09-08 | 2008-01-15 | 삼성전자주식회사 | 가변 인덕터 |
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2003
- 2003-03-28 US US10/402,032 patent/US6856499B2/en not_active Expired - Lifetime
- 2003-11-05 EP EP03256987A patent/EP1463070A3/en not_active Withdrawn
- 2003-11-14 JP JP2003385623A patent/JP4188805B2/ja not_active Expired - Fee Related
- 2003-11-14 NO NO20035065A patent/NO20035065L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP1463070A3 (en) | 2004-12-15 |
US20040190217A1 (en) | 2004-09-30 |
US6856499B2 (en) | 2005-02-15 |
JP2004304154A (ja) | 2004-10-28 |
NO20035065D0 (no) | 2003-11-14 |
EP1463070A2 (en) | 2004-09-29 |
NO20035065L (no) | 2004-09-29 |
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