JP2006509643A - MEMS(Micro−Electro−Mechanical−System)素子のアレイの駆動 - Google Patents
MEMS(Micro−Electro−Mechanical−System)素子のアレイの駆動 Download PDFInfo
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- JP2006509643A JP2006509643A JP2004558933A JP2004558933A JP2006509643A JP 2006509643 A JP2006509643 A JP 2006509643A JP 2004558933 A JP2004558933 A JP 2004558933A JP 2004558933 A JP2004558933 A JP 2004558933A JP 2006509643 A JP2006509643 A JP 2006509643A
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- 238000000034 method Methods 0.000 claims abstract description 14
- 239000003990 capacitor Substances 0.000 claims description 56
- 238000010586 diagram Methods 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 36
- 239000000758 substrate Substances 0.000 description 15
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000002513 implantation Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000003446 memory effect Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/40—Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
Description
方法2では、誘電層の実効誘電率εeffを変化させる。閉じた状態の上部電極の静電力が、所定の制御電圧にわたって増加するεeffと共に増加する。したがって、Vopenを、√(1/εeff)の因数により調整することができる。Vcloseも、これにより、特定の範囲まで影響を受ける。第1キャパシタに閉じた層を、第2キャパシタにパターン層を塗布し、第3キャパシタには誘電層を塗布しないことも可能である。そのほかに、誘電層の厚さ、および個別キャパシタの間のエアギャップを変化させることも可能である。
Claims (12)
- MEMS(Micro-Electromechanical System)素子のアレイを備え、
前記アレイは、複数の状態をその出力において提供し、
前記MEMS素子は、それぞれ、第1状態と、第2状態とを有し、
前記第1状態から前記第2状態への遷移は、開電圧により行われ、前記第2状態から前記第1状態への遷移は、閉電圧により行われ、
前記アレイは、すべてのMEMS素子に印加される単一制御電圧のための入力を備え、前記アレイの様々な状態は、前記単一制御電圧を変化させることによって得られる、
ことを特徴とする電子装置。 - 前記MEMS素子が、それぞれ、前記開電圧が前記閉電圧と異なる特徴的ヒステリシス曲線を有し、この特徴的ヒステリシリス曲線ならびに対応する前記開電圧および閉電圧は、それぞれのMEMS素子において互いに異なっている、ことを特徴とする請求項1に記載の電子装置。
- 前記アレイの前記MEMS素子は、並列に接続されている、ことを特徴とする請求項1に記載の装置。
- 前記アレイの前記MEMS素子の数は、2〜10の範囲にある、ことを特徴とする請求項1に記載の装置。
- 単一制御電圧の前記入力は、トランジスタである、ことを特徴とする請求項1に記載の装置。
- MEMS素子のアレイを複数備え、各アレイは、単一制御電圧のための入力を有する、ことを特徴とする請求項1に記載の装置。
- 前記アレイの前記MEMS素子のそれぞれが、固定電極と、前記閉電圧および前記開電圧をそれぞれ印加することにより、前記固定電極に向けて、または離れるように移動可能な可動電極とを有し、前記第1状態においては、前記固定電極と前記移動電極の間の距離は、前記第2状態においてよりも小さくなり、
前記可動電極は、前記固定電極に実質的に並列して懸架され、ばね定数を有する少なくとも1つのカンチレバーアームによって支持構造に固定され、
前記MEMS素子には、前記閉電圧および前記開電圧を供給するための作動領域を有する作動電極が設けられている、
ことを特徴とする請求項1に記載の装置。 - 前記アレイの第1および第2MEMS素子は、異なる特徴的ヒステリシス曲線を有しており、前記第1および第2MEMS素子の前記制御電極の作動領域が、異なり、および/または、前記カンチレバーアームの前記ばね定数が、異なる、ことを特徴とする請求項2に記載の装置。
- 誘電率を有する少なくとも1つの誘電層が、前記固定電極と前記可動電極の間に存在しており、前記MEMS素子は、MEMSキャパシタであり、このキャパシタの前記第1状態は、第1状態キャパシタンスを有し、
前記アレイの第1および第2MEMSキャパシタが、異なる特徴的ヒステリシス曲線を有しており、前記第1および第2MEMSキャパシタの前記第1状態キャパシタンスが、異なる、ことを特徴とする請求項7に記載の装置。 - 個別の幅により互いに異なるMEMS素子の前記特徴的ヒステリシス曲線は、小さな幅を有するヒステリシス曲線が、次の、より大きい幅を有するヒステリシス曲線の幅内に完全に位置するように設計されている、ことを特徴とする請求項2に記載の装置。
- 前記MEMS素子の前記特徴的ヒステリシス曲線が、動作線図において、共通の中央線の周りに集中する、ことを特徴とする請求項2に記載の装置。
- 請求項1乃至請求項11のいずれかに記載のMEMS(Micro-Electromechanical System)素子のアレイを駆動するための方法であって、
単一制御電圧が、前記アレイの前記MEMS素子に共通して印加され、前記電圧は、前記アレイの様々な状態を得るために変化される、ことを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02080219 | 2002-12-10 | ||
PCT/IB2003/005590 WO2004054088A2 (en) | 2002-12-10 | 2003-12-01 | Driving of an array of micro-electro-mechanical-system (mems) elements |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006509643A true JP2006509643A (ja) | 2006-03-23 |
JP4555951B2 JP4555951B2 (ja) | 2010-10-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004558933A Expired - Fee Related JP4555951B2 (ja) | 2002-12-10 | 2003-12-01 | MEMS(Micro−Electro−Mechanical−System)素子のアレイの駆動 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20060050350A1 (ja) |
EP (1) | EP1573894B1 (ja) |
JP (1) | JP4555951B2 (ja) |
KR (1) | KR101140689B1 (ja) |
CN (1) | CN1723606B (ja) |
AT (1) | ATE516625T1 (ja) |
AU (1) | AU2003283676A1 (ja) |
TW (1) | TW200507444A (ja) |
WO (1) | WO2004054088A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009290153A (ja) * | 2008-06-02 | 2009-12-10 | Taiyo Yuden Co Ltd | スイッチトキャパシタ |
JP2013543579A (ja) * | 2010-09-13 | 2013-12-05 | 日本テキサス・インスツルメンツ株式会社 | 電源の電圧状況を検出するための方法及び装置 |
Families Citing this family (26)
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---|---|---|---|---|
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
KR100703140B1 (ko) | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | 간섭 변조기 및 그 제조 방법 |
WO2005043573A2 (en) * | 2003-10-31 | 2005-05-12 | Koninklijke Philips Electronics N.V. | A method of manufacturing an electronic device and electronic device |
US7499208B2 (en) | 2004-08-27 | 2009-03-03 | Udc, Llc | Current mode display driver circuit realization feature |
US7369296B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US7532195B2 (en) | 2004-09-27 | 2009-05-12 | Idc, Llc | Method and system for reducing power consumption in a display |
BRPI0509575A (pt) | 2004-09-27 | 2007-10-09 | Idc Llc | método e dispositivo para modulação de luz interferométrica de multi-estados |
US7310179B2 (en) * | 2004-09-27 | 2007-12-18 | Idc, Llc | Method and device for selective adjustment of hysteresis window |
US8310441B2 (en) | 2004-09-27 | 2012-11-13 | Qualcomm Mems Technologies, Inc. | Method and system for writing data to MEMS display elements |
US7545550B2 (en) | 2004-09-27 | 2009-06-09 | Idc, Llc | Systems and methods of actuating MEMS display elements |
WO2006046193A1 (en) | 2004-10-27 | 2006-05-04 | Koninklijke Philips Electronics N. V. | Electronic device |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
WO2007103537A2 (en) * | 2006-03-08 | 2007-09-13 | Wispry, Inc. | Tunable impedance matching networks and tunable diplexer matching systems |
US7957589B2 (en) | 2007-01-25 | 2011-06-07 | Qualcomm Mems Technologies, Inc. | Arbitrary power function using logarithm lookup table |
US20090002069A1 (en) * | 2007-06-27 | 2009-01-01 | Ntt Docomo, Inc. | Variable circuit, communication apparatus, mobile communication apparatus and communication system |
WO2009102581A1 (en) * | 2008-02-11 | 2009-08-20 | Qualcomm Mems Technologies, Inc. | Impedance sensing to determine pixel state in a passively addressed display array |
US8258800B2 (en) * | 2008-02-11 | 2012-09-04 | Qualcomm Mems Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
EP2252899A2 (en) * | 2008-02-11 | 2010-11-24 | QUALCOMM MEMS Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
US20090201282A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc | Methods of tuning interferometric modulator displays |
JP2011516903A (ja) * | 2008-02-11 | 2011-05-26 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 表示駆動機構と統合された表示要素の検知、測定、または特性評価のための方法および装置、ならびにそれを使用するシステムおよび応用 |
US7643305B2 (en) | 2008-03-07 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | System and method of preventing damage to metal traces of flexible printed circuits |
US7782522B2 (en) | 2008-07-17 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Encapsulation methods for interferometric modulator and MEMS devices |
US8441081B2 (en) | 2008-07-22 | 2013-05-14 | William Jay Arora | Electro-mechanical switches and methods of use thereof |
US8405649B2 (en) | 2009-03-27 | 2013-03-26 | Qualcomm Mems Technologies, Inc. | Low voltage driver scheme for interferometric modulators |
DE102010014101B4 (de) | 2010-04-07 | 2016-06-09 | Epcos Ag | Hybridschaltung mit einstellbarer Impedanz |
KR101383760B1 (ko) | 2012-07-23 | 2014-04-10 | 서강대학교산학협력단 | 수평 구동형 전기기계 메모리 소자 및 그 제조방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4674180A (en) * | 1984-05-01 | 1987-06-23 | The Foxboro Company | Method of making a micromechanical electric shunt |
JP2000505911A (ja) * | 1996-01-04 | 2000-05-16 | マサチューセッツ インスティテュート オブ テクノロジー | マイクロメカニカル光学スイッチ及びフラットパネルディスプレイ |
JP2001100121A (ja) * | 1999-09-28 | 2001-04-13 | Toshiba Corp | 可動フィルム型表示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4242736A (en) * | 1976-10-29 | 1980-12-30 | Massachusetts Institute Of Technology | Capacitor memory and methods for reading, writing, and fabricating capacitor memories |
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
DE4437261C1 (de) * | 1994-10-18 | 1995-10-19 | Siemens Ag | Mikromechanisches elektrostatisches Relais |
US5578976A (en) * | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
US5880921A (en) * | 1997-04-28 | 1999-03-09 | Rockwell Science Center, Llc | Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology |
US5872489A (en) * | 1997-04-28 | 1999-02-16 | Rockwell Science Center, Llc | Integrated tunable inductance network and method |
FI109155B (fi) * | 2000-04-13 | 2002-05-31 | Nokia Corp | Menetelmä ja järjestely mikromekaanisen elementin ohjaamiseksi |
US6495944B2 (en) * | 2001-04-18 | 2002-12-17 | International Business Machines Corporation | Electrostatic microactuator with viscous liquid damping |
US6574033B1 (en) * | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
US6972881B1 (en) * | 2002-11-21 | 2005-12-06 | Nuelight Corp. | Micro-electro-mechanical switch (MEMS) display panel with on-glass column multiplexers using MEMS as mux elements |
-
2003
- 2003-12-01 EP EP03775657A patent/EP1573894B1/en not_active Expired - Lifetime
- 2003-12-01 US US10/537,591 patent/US20060050350A1/en not_active Abandoned
- 2003-12-01 KR KR1020057010395A patent/KR101140689B1/ko active IP Right Grant
- 2003-12-01 AU AU2003283676A patent/AU2003283676A1/en not_active Abandoned
- 2003-12-01 CN CN2003801055020A patent/CN1723606B/zh not_active Expired - Fee Related
- 2003-12-01 JP JP2004558933A patent/JP4555951B2/ja not_active Expired - Fee Related
- 2003-12-01 AT AT03775657T patent/ATE516625T1/de not_active IP Right Cessation
- 2003-12-01 WO PCT/IB2003/005590 patent/WO2004054088A2/en active Application Filing
- 2003-12-05 TW TW092134400A patent/TW200507444A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4674180A (en) * | 1984-05-01 | 1987-06-23 | The Foxboro Company | Method of making a micromechanical electric shunt |
JP2000505911A (ja) * | 1996-01-04 | 2000-05-16 | マサチューセッツ インスティテュート オブ テクノロジー | マイクロメカニカル光学スイッチ及びフラットパネルディスプレイ |
JP2001100121A (ja) * | 1999-09-28 | 2001-04-13 | Toshiba Corp | 可動フィルム型表示装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009290153A (ja) * | 2008-06-02 | 2009-12-10 | Taiyo Yuden Co Ltd | スイッチトキャパシタ |
JP2013543579A (ja) * | 2010-09-13 | 2013-12-05 | 日本テキサス・インスツルメンツ株式会社 | 電源の電圧状況を検出するための方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2004054088A2 (en) | 2004-06-24 |
WO2004054088A3 (en) | 2004-12-02 |
EP1573894B1 (en) | 2011-07-13 |
TW200507444A (en) | 2005-02-16 |
AU2003283676A1 (en) | 2004-06-30 |
US20060050350A1 (en) | 2006-03-09 |
EP1573894A2 (en) | 2005-09-14 |
KR20050085452A (ko) | 2005-08-29 |
JP4555951B2 (ja) | 2010-10-06 |
ATE516625T1 (de) | 2011-07-15 |
CN1723606A (zh) | 2006-01-18 |
KR101140689B1 (ko) | 2012-05-03 |
CN1723606B (zh) | 2011-01-12 |
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