JP4555698B2 - レジストパターン形成方法 - Google Patents

レジストパターン形成方法 Download PDF

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Publication number
JP4555698B2
JP4555698B2 JP2005020451A JP2005020451A JP4555698B2 JP 4555698 B2 JP4555698 B2 JP 4555698B2 JP 2005020451 A JP2005020451 A JP 2005020451A JP 2005020451 A JP2005020451 A JP 2005020451A JP 4555698 B2 JP4555698 B2 JP 4555698B2
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JP
Japan
Prior art keywords
supercritical
group
film
resist
organic substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005020451A
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English (en)
Japanese (ja)
Other versions
JP2006208735A (ja
Inventor
英夫 生津
充 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd, Nippon Telegraph and Telephone Corp filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2005020451A priority Critical patent/JP4555698B2/ja
Priority to US11/795,990 priority patent/US8026047B2/en
Priority to PCT/JP2006/301300 priority patent/WO2006080429A1/ja
Priority to TW095103332A priority patent/TWI326014B/zh
Publication of JP2006208735A publication Critical patent/JP2006208735A/ja
Application granted granted Critical
Publication of JP4555698B2 publication Critical patent/JP4555698B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
JP2005020451A 2005-01-27 2005-01-27 レジストパターン形成方法 Expired - Fee Related JP4555698B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005020451A JP4555698B2 (ja) 2005-01-27 2005-01-27 レジストパターン形成方法
US11/795,990 US8026047B2 (en) 2005-01-27 2006-01-27 Resist pattern forming method, supercritical processing solution for lithography process, and antireflection film forming method
PCT/JP2006/301300 WO2006080429A1 (ja) 2005-01-27 2006-01-27 レジストパターン形成方法、リソグラフィプロセス用超臨界処理液および反射防止膜形成方法
TW095103332A TWI326014B (en) 2005-01-27 2006-01-27 A method for forming a resist pattern and a supercritical processing solvent for lithography process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005020451A JP4555698B2 (ja) 2005-01-27 2005-01-27 レジストパターン形成方法

Publications (2)

Publication Number Publication Date
JP2006208735A JP2006208735A (ja) 2006-08-10
JP4555698B2 true JP4555698B2 (ja) 2010-10-06

Family

ID=36740453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005020451A Expired - Fee Related JP4555698B2 (ja) 2005-01-27 2005-01-27 レジストパターン形成方法

Country Status (4)

Country Link
US (1) US8026047B2 (US08026047-20110927-C00030.png)
JP (1) JP4555698B2 (US08026047-20110927-C00030.png)
TW (1) TWI326014B (US08026047-20110927-C00030.png)
WO (1) WO2006080429A1 (US08026047-20110927-C00030.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5222111B2 (ja) * 2008-11-26 2013-06-26 東京応化工業株式会社 レジスト表面改質液及びこれを利用したレジストパターン形成方法
JP5395012B2 (ja) * 2010-08-23 2014-01-22 信越化学工業株式会社 レジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法、フラーレン誘導体
KR101187375B1 (ko) * 2011-01-27 2012-10-05 부경대학교 산학협력단 반도체 기판의 실리콘 산화막의 식각방법
US11720033B2 (en) * 2021-03-05 2023-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Material management method and system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140359A (ja) * 2001-10-31 2003-05-14 Matsushita Electric Ind Co Ltd パターン形成方法
JP2003224050A (ja) * 2002-01-29 2003-08-08 Matsushita Electric Ind Co Ltd パターン形成方法
WO2003087936A1 (en) * 2002-04-12 2003-10-23 Supercritical Systems Inc. Method of treatment of porous dielectric films to reduce damage during cleaning
JP2003338452A (ja) * 2002-05-22 2003-11-28 Matsushita Electric Ind Co Ltd パターン形成方法
JP2004233954A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法およびレジストパターン
JP2005202176A (ja) * 2004-01-16 2005-07-28 Hitachi Ltd パタン形成方法
JP2005223118A (ja) * 2004-02-05 2005-08-18 Nippon Telegr & Teleph Corp <Ntt> 超臨界処理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3206989B2 (ja) 1992-11-13 2001-09-10 富士写真フイルム株式会社 ポジ型感光性材料
JPH06230574A (ja) 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
JP3515326B2 (ja) 1996-06-07 2004-04-05 日本電信電話株式会社 レジスト組成物
KR100234143B1 (ko) * 1996-06-07 1999-12-15 미야즈 쥰이치로 레지스트 물질 및 그 제조 방법
JP2000089477A (ja) 1998-09-11 2000-03-31 Nec Corp レジストパターンの形成方法
JP3063745B2 (ja) * 1998-10-06 2000-07-12 日本電気株式会社 パターン形成されたレジスト膜の処理方法
JP2002341538A (ja) 2001-05-11 2002-11-27 Fuji Photo Film Co Ltd 電子線またはｘ線用ポジ型レジスト組成物
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
JP2004233953A (ja) 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
KR20070001956A (ko) 2004-01-23 2007-01-04 유니버시티 오브 매사추세츠 구조재료 및 그 형성 방법
US20060003271A1 (en) * 2004-06-30 2006-01-05 Clark Shan C Basic supercritical solutions for quenching and developing photoresists
KR100654802B1 (ko) * 2004-12-03 2006-12-08 삼성전자주식회사 잉크젯 프린트헤드 및 그 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140359A (ja) * 2001-10-31 2003-05-14 Matsushita Electric Ind Co Ltd パターン形成方法
JP2003224050A (ja) * 2002-01-29 2003-08-08 Matsushita Electric Ind Co Ltd パターン形成方法
WO2003087936A1 (en) * 2002-04-12 2003-10-23 Supercritical Systems Inc. Method of treatment of porous dielectric films to reduce damage during cleaning
JP2003338452A (ja) * 2002-05-22 2003-11-28 Matsushita Electric Ind Co Ltd パターン形成方法
JP2004233954A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法およびレジストパターン
JP2005202176A (ja) * 2004-01-16 2005-07-28 Hitachi Ltd パタン形成方法
JP2005223118A (ja) * 2004-02-05 2005-08-18 Nippon Telegr & Teleph Corp <Ntt> 超臨界処理方法

Also Published As

Publication number Publication date
TW200643646A (en) 2006-12-16
WO2006080429A1 (ja) 2006-08-03
TWI326014B (en) 2010-06-11
US20080124648A1 (en) 2008-05-29
JP2006208735A (ja) 2006-08-10
US8026047B2 (en) 2011-09-27

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