JP4554097B2 - 誘導結合プラズマ処理装置 - Google Patents

誘導結合プラズマ処理装置 Download PDF

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Publication number
JP4554097B2
JP4554097B2 JP2001045556A JP2001045556A JP4554097B2 JP 4554097 B2 JP4554097 B2 JP 4554097B2 JP 2001045556 A JP2001045556 A JP 2001045556A JP 2001045556 A JP2001045556 A JP 2001045556A JP 4554097 B2 JP4554097 B2 JP 4554097B2
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Japan
Prior art keywords
antenna
chamber
dielectric wall
inductively coupled
coupled plasma
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JP2001045556A
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Japanese (ja)
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JP2002246376A5 (enExample
JP2002246376A (ja
Inventor
健次 天野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2001045556A priority Critical patent/JP4554097B2/ja
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Publication of JP2002246376A5 publication Critical patent/JP2002246376A5/ja
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  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2001045556A 2001-02-21 2001-02-21 誘導結合プラズマ処理装置 Expired - Fee Related JP4554097B2 (ja)

Priority Applications (1)

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JP2001045556A JP4554097B2 (ja) 2001-02-21 2001-02-21 誘導結合プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001045556A JP4554097B2 (ja) 2001-02-21 2001-02-21 誘導結合プラズマ処理装置

Publications (3)

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JP2002246376A JP2002246376A (ja) 2002-08-30
JP2002246376A5 JP2002246376A5 (enExample) 2008-04-03
JP4554097B2 true JP4554097B2 (ja) 2010-09-29

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JP2001045556A Expired - Fee Related JP4554097B2 (ja) 2001-02-21 2001-02-21 誘導結合プラズマ処理装置

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100470999B1 (ko) * 2002-11-18 2005-03-11 삼성전자주식회사 유도 결합 플라즈마 식각장치의 챔버구조
JP4540369B2 (ja) * 2004-03-09 2010-09-08 株式会社シンクロン 薄膜形成装置
JP5156041B2 (ja) * 2010-03-19 2013-03-06 株式会社シンクロン 薄膜形成方法
JP5487027B2 (ja) * 2010-06-25 2014-05-07 パナソニック株式会社 ドライエッチング装置及びそれに使用される誘電体のカバー部
KR101559024B1 (ko) * 2014-03-27 2015-10-13 세메스 주식회사 기판 처리 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109033B2 (ja) * 1990-04-09 1995-11-22 日電アネルバ株式会社 基板温度コントロール機構
JPH05343361A (ja) * 1992-06-09 1993-12-24 Nec Corp 反応性イオンエッチング装置
JP3153768B2 (ja) * 1995-08-17 2001-04-09 東京エレクトロン株式会社 プラズマ処理装置
JP4194164B2 (ja) * 1999-02-16 2008-12-10 キヤノンアネルバ株式会社 プラズマ処理装置
JP2000340548A (ja) * 1999-05-31 2000-12-08 Sumitomo Metal Ind Ltd プラズマ処理装置
JP2001053069A (ja) * 1999-08-10 2001-02-23 Matsushita Electric Ind Co Ltd プラズマ処理方法とプラズマ処理装置

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JP2002246376A (ja) 2002-08-30

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