WO2000074123A1 - Fenetre transparente pour chambre de traitement d'appareil de traitement et son procede de production - Google Patents

Fenetre transparente pour chambre de traitement d'appareil de traitement et son procede de production Download PDF

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Publication number
WO2000074123A1
WO2000074123A1 PCT/JP2000/003359 JP0003359W WO0074123A1 WO 2000074123 A1 WO2000074123 A1 WO 2000074123A1 JP 0003359 W JP0003359 W JP 0003359W WO 0074123 A1 WO0074123 A1 WO 0074123A1
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WO
WIPO (PCT)
Prior art keywords
transmission window
film
temperature
protective film
gas
Prior art date
Application number
PCT/JP2000/003359
Other languages
English (en)
Japanese (ja)
Inventor
Yoshinori Kato
Mitsuhiro Tachibana
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2000074123A1 publication Critical patent/WO2000074123A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Definitions

  • the present invention relates to a transmission window manufacturing method and a transmission window provided in a processing container of a processing apparatus for a member to be processed such as a semiconductor wafer.
  • various processes such as a film forming process, an oxidation diffusion process, an etching process, and a reforming process are repeatedly performed on the surface of a semiconductor wafer to be processed. Further, if necessary, a cleaning process is performed to remove an unnecessary film adhering to the inside of the processing container of the processing apparatus in order to suppress generation of particles that cause a reduction in yield.
  • the corrosive gas include a halogen gas and a halogen compound gas.
  • WF r WF r
  • C 1 F such as C 1 F 3 used as a cleaning gas.
  • System gas and HF system gas used as a cleaning gas.
  • a transmission window through which heat rays from a heating lamp cannot pass efficiently cannot be introduced into the processing apparatus.
  • a transmission window through which light from plasma is transmitted becomes difficult to detect plasma etching and the like, and further, a reforming processing apparatus that modifies a film on a wafer surface using ultraviolet light is used. In such a case, it becomes difficult for the transmission window that transmits ultraviolet light to transmit light.
  • the surface of such a transmission window made of quartz glass is, for example, disclosed in Japanese Patent Application Laid-Open Nos. Sho 53-14767 and Sho 54-3111. No. 8, JP-A-9-195771, JP-A-9-195772, etc.
  • a protective film made of A 1 A or the like having a predetermined thickness is coated.
  • the method of coating the A1 film as described above can prevent the occurrence of devitrification.
  • a large thermal stress is applied to the protective film, which may cause cracks in the paint ink protective film or peel off the protective film from the surface of the transmission window.
  • the conventional transmission window has a problem that the adhesion of the protective film is not so high.
  • a protective film is provided in a double manner, but in this case, there is a problem that a film forming process is complicated.
  • an object of the present invention is to provide a method for manufacturing a transmission window having a protective film having a large adhesive force that does not easily cause cracking or peeling, and to provide a transmission window.
  • the present inventor has conducted intensive studies on the protective film coated on the transmission window. As a result, by optimizing the temperature and thickness when depositing the protective film, and further optimizing the film forming method, The present invention has been made based on the finding that a protective film having excellent adhesion can be formed.
  • a method for manufacturing a transmission window provided in a processing container capable of accommodating an object to be subjected to a predetermined process and capable of being evacuated comprising: 0 containing ° C or below in thickness at a temperature of 1. 0 m below the alumina (a l 2 ⁇ 3) film formation step of forming a protective film ing than the crystalline film, the manufacturing method of the transparent window is provided.
  • the adhesion of the protective film to the transmission window is greatly improved, cracks and peeling are prevented, and the durability of the protective film can be improved even when the temperature is repeatedly increased and decreased.
  • the above-mentioned temperature is preferably set to a substantially intermediate temperature between the temperature at which the transmission window is exposed when the object to be processed is subjected to the predetermined processing and the room temperature.
  • the film forming step is a high-frequency ion plating step.
  • high-frequency ion plating method By using this, the adhesion of the protective film to the transmission window is further improved.
  • FIG. 1 is a longitudinal sectional view showing a semiconductor processing apparatus using a transmission window according to the present invention.
  • FIG. 2 is an enlarged sectional view showing the transmission window of the present invention.
  • FIG. 3 is a schematic diagram illustrating an example of a high-frequency ion plating apparatus.
  • FIG. 4 is a table showing the evaluation results of the alumina crystal film.
  • FIG. 5 is a schematic diagram showing an example of a plasma etching processing apparatus as a processing apparatus.
  • FIG. 6 is a schematic diagram showing an example of an ultraviolet ray reforming treatment device as a treatment device.
  • FIG. 1 shows a semiconductor wafer processing apparatus using a transmission window according to the present invention
  • FIG. 2 shows an enlarged cross-sectional view of the transmission window of the present invention
  • a film formation processing apparatus for depositing a tungsten film using WF 6 as a highly corrosive film formation gas will be described as an example of a semiconductor wafer processing apparatus.
  • the film forming apparatus 2 has a processing container 4 formed into a cylindrical or square box shape by, for example, aluminum or the like. Inside the processing container 4, a cylindrical shape standing upright from the bottom of the processing container is provided.
  • a mounting table 10 for mounting a semiconductor wafer W as an object to be processed is physically supported on the reflector 6 via, for example, a cylindrical holding member 8 having an L-shaped cross section.
  • the reflector 6 is made of, for example, aluminum for reflecting lamp light
  • the holding member 8 is made of a material having low heat conductivity, for example, quartz, for the purpose of shielding the mounting table 10 from heat conduction.
  • the mounting table 10 is made of, for example, a carbon material, an aluminum compound such as A1N, or the like having a thickness of about l mm.
  • a plurality of, for example, three lift pins 12 are supported by a circular ring-shaped support member 14 and are provided in an upright manner.
  • the support member 14 is attached to the upper end of a push-up bar 16 provided vertically through the bottom of the processing container.
  • the lift pin 12 is inserted into a lift pin hole 18 penetrating through the mounting table 10, and is moved upward by moving the push-up rod 16 upward.
  • the wafer W supported on 10 can be lifted.
  • the lower end of the push-up bar 16 is connected to the actuator 22.
  • an extendable bellows 20 force is provided between the processing container 4 and the actuary 22 in order to keep the inside of the processing container 4 airtight.
  • a substantially ring-shaped ceramic clamp ring 24 along the contour of the wafer is provided on the peripheral portion of the mounting table 10. Is provided.
  • the clamp ring 24 is connected to the support member 14 via a support rod 26 that vertically penetrates the holding member 8 in a loosely fitted state, so that the clamp ring 24 is a lifter pin 12. It goes up and down as one unit.
  • a compression coil spring 28 is provided around the support bar 26 between the holding member 8 and the support member 14.
  • the compression coil spring 28 applies a force in a downward direction to the clamp ring 24 and ensures the clamping of the wafer W to the mounting table 10.
  • These lift pins 12, support members 14, and holding members 8 are also constituted by a heat ray transmission window made of quartz or the like.
  • the transmission window 30 is entirely formed in a disk shape, and as shown in FIG. 2, a transmission plate 34 made of, for example, quartz glass as a transmission window main body, and a processing gas in the processing container 4.
  • the thickness T 1 of the transparent plate 34 is set to, for example, about 15 mm so as to withstand the pressure difference between the inside and the outside of the processing container 4.
  • the thickness T 2 of the protective film 36 is set to It is set to 1.0 m or less to enhance the adhesion with 4.
  • the protective film 36 is formed by using, for example, a high frequency (RF) ion plating method, which will be described later.
  • a box-shaped heating vessel 38 constituting a heating chamber is provided below the transmission window 30 so as to surround the transmission window 30.
  • a plurality of heating lamps 40 are provided as heating means.
  • the heating lamp 40 is mounted on a turntable 42 serving also as a reflecting mirror.
  • the turntable 42 is attached to the bottom of the heating vessel 38 via a rotary shaft. It is rotated by the provided rotating motor. Accordingly, the heat rays emitted from the heating lamp 40 can be transmitted through the transmission window 30 for the lamp to irradiate the lower surface of the mounting table 10 to heat it.
  • a ring-shaped rectifying plate 48 having a number of rectifying holes 46 is provided on the outer peripheral side of the mounting table 10, and the rectifying plate 48 is a support column formed in a vertical annular shape. Supported by 50.
  • a ring-shaped stone attachment 52 is provided on the inner peripheral side of the current plate 48 so as to be in contact with the outer peripheral portion of the clamp ring 24 and prevent gas from flowing thereunder.
  • An exhaust port 54 is provided at the bottom of the processing vessel below the current plate 48. The exhaust port 54 is connected to an exhaust path 56 connected to a vacuum pump (not shown). The inside can be maintained at a predetermined degree of vacuum.
  • a gate valve 58 that is opened and closed when a wafer is loaded and unloaded is provided on a side wall of the processing container 4.
  • a shower head 60 for introducing a processing gas or the like into the processing container 4 is provided inside the processing container ceiling facing the mounting table 10.
  • the shower head portion 60 has a head body 62 formed in a circular box shape from, for example, aluminum or the like, and a gas inlet port 64 is provided in the ceiling portion. I have.
  • the gas inlet port 6 4 gas required for processing through the gas passage, for example WF 6, A r, S i ⁇ 4, H, N gas source for supplying a gas such as 2, or C 1 F 3 A gas source for cleaning is connected so that the flow rate can be controlled.
  • a number of gas injection holes 66 for discharging the gas supplied into the shower head body 62 to the processing space S are arranged over substantially the entire surface.
  • gas is released to the entire surface of the wafer W.
  • a diffusion plate 70 having a large number of gas scatterings 68 is provided in the head main body 62 so as to uniformly supply gas to the wafer surface.
  • the gate valve 58 provided on the side wall of the processing container 4 is opened, and the wafer W is loaded into the processing container 4 by a transfer arm (not shown), and the wafer W is placed on the upper end of the lifted pins 12. Deliver by placing. And the Rifu Pin 1 2 The wafer W is placed on the mounting table 10 by lowering the push-up bar 16, and the periphery of the wafer W is further suppressed by the clamp ring 24. Fix it.
  • a required amount of WF 6 (source gas), SiH 4 , H 2, Ar, or N 2 is supplied as a processing gas from the processing gas source (not shown) to the shower head 60 by a predetermined amount.
  • the mixture is supplied and mixed, and the mixture is uniformly supplied into the processing container 4 from the gas injection holes 66 on the lower surface of the head body 62.
  • the inside of the processing container 4 is set to a predetermined degree of vacuum by sucking and exhausting the internal atmosphere from the exhaust port 54, and driven while rotating the heating lamp 40 located below the mounting table 10. Then, heat energy is radiated into the processing container 4.
  • the emitted heat rays pass through the transmission window 30 for the lamp, and then irradiate the back surface of the mounting table 10 to heat it.
  • the mounting table 10 is very thin, about 1 mm, and is quickly heated. Therefore, the wafer W mounted thereon can be quickly heated to a predetermined temperature. .
  • the supplied mixed gas generates a predetermined chemical reaction, and, for example, a tungsten film is deposited and formed on the wafer surface according to the film forming conditions.
  • the film forming gas supplied to the processing space S flows into the back surface of the mounting table 10 via the contact gap between the clamping 24 and the wafer W and the attachment 52.
  • this corrosive film forming gas comes into contact with the surface of the transmission window 30.
  • a protective film 36 made of an alumina crystal film (sapphire film) is formed on this surface, corrosion is prevented and devitrification does not occur here.
  • the protective film 36 since the protective film 36 is provided, devitrification does not occur on the surface of the transmission window 30. Further, depending on the process temperature, the transmission window 30 itself can be heated to a temperature between 700 ° C or more and normal temperature (for example, a temperature of about 25 ° C) by repeatedly operating and stopping the device. Although a large thermal stress is applied due to the temperature rise and fall, the protective film 36 formed by the method of the present invention has a particularly large adhesion to the transmission window main body as described later. It is possible to prevent cracks and peeling from occurring in the protective film 36.
  • FIG. 3 is a schematic longitudinal sectional view showing an example of a high-frequency ion plating apparatus, in which a crucible 76 containing aluminum 74 as an evaporation source is arranged at the bottom of a vacuum vessel 72 made evacuable.
  • a transparent plate 34 supported by a substrate support base 78 having a temperature adjustment function is installed on the ceiling facing the same.
  • a negative voltage is applied to the substrate support base 78 from the DC power supply 80 to form, for example, a negative electrode (cathode), and the aluminum 74 is grounded. Then, a high-frequency oscillation coil 84 is installed so as to cover the upper part of the crucible 76, and this coil 84 is connected to a high-frequency power supply 82.
  • the evaporated particles are positively ionized in the vacuum vessel 72 using a high-frequency electric field.
  • Ar gas and O 2 gas are introduced into the vacuum chamber 72 as gases, and a negative DC voltage is applied to the transparent plate 34 side.
  • a high-frequency discharge is caused by the applied high-frequency electric field, and a part of the evaporated particles of A 1 generated from the crucible 76 becomes particles ionized by the high-frequency electric field, or collides with a gas ionized by the high-frequency discharge.
  • An alumina crystal protective film is formed on the transmission window by using a high-frequency ion plating method, a sputtering method, and a vapor deposition method.
  • the thickness of the protective film is within a range of 0.1 to 2.0 m.
  • the film formation temperature was changed within the range of 100 to 350 ° C.
  • the adhesion of the protective film thus formed was evaluated.
  • the evaluation was performed by exposing the transmission window on which the alumina crystal protective film was formed to a heat cycle varying between 300 ° C and 700 ° C, and then visually inspecting for cracks. .
  • the results of the evaluation are shown in the table of FIG.
  • examples of film formation are shown as Examples 1 to 8 and Comparative Examples 1 to 4.
  • RFIP is the high frequency
  • the on-plating method is shown.
  • Comparative Example 1 the film thickness of the alumina crystal protective film was set to 2.0, and the film forming temperature was set to 20 during film formation. The temperature rose from 0 ° C to 250 ° C.
  • Comparative Example 1 no cracks were observed on the protective film by visual inspection, and no cracks were generated at 300 ° C during the heat cycle test (this is indicated by a ⁇ ). A crack has occurred (indicated by an X).
  • Comparative Example 2 the film thickness of the alumina crystal protective film was 2.0 xm, and the film forming temperature was 200 ° C.
  • the results of Comparative Example 2 were the same as those of Comparative Example 1.
  • Comparative Example 3 the film thickness was 2.OMTI and the film formation temperature was 350.degree. In Comparative Example 3, cracks were already seen by visual inspection, and a heat cycle test at 300 ° C. could not be performed. In Comparative Example 4, the film thickness was 2.0 m, and the film formation temperature was 200 ° C. Also in Comparative Example 4, no crack was observed by visual inspection, but a crack occurred at 300 ° C during the heat cycle test. From the above inspection results, if the film thickness of the alumina crystal protective film is 2.0 m, cracks and peeling of the film are observed in the transmission window even at a low film forming temperature, which is not preferable. You can see that. In Comparative Examples 1 to 4, the area where the heat cycle test was not performed is an area where cracks are apparently generated even when the test data is taken at a temperature higher than the temperature at which the cracks occurred.
  • Examples 1 to 7 show examples according to the conditions of the present invention.
  • the film was formed by the high-frequency ion plating method, the sputtering method, and the vapor deposition method.
  • the film formation temperature was 100 ° C at the lowest temperature and 35 Ot: even at the highest temperature, and was kept below 350 ° C.
  • the film thickness was set from 0.1 m to 1.0 m.
  • the film thickness was 1.0_tm. In this case, as a result of the heat cycle test, no crack was observed up to 400 ° C, but the crack was formed at 500 ° C. Occurred. Therefore, it is found that it is not preferable to set the film thickness to a value exceeding 1.
  • the film thickness must be suppressed to 1.0 m or less.
  • the film thicknesses are 0.1111 and 0.3 m, and the film formation temperature is 350 ° C. or lower as described above. Regardless of the film forming method in Examples 1 to 7, no cracks were found by visual appearance evaluation, and the heat up to 700 ° C. No cracking or peeling of the film was observed in the cycle test, and it was found that the adhesion of the protective film to the transmission window body was very high, and good results were obtained.
  • the alumina crystal protective film shown in this embodiment 8 has a process in which the temperature of the transmission window 30 (FIG. 1) itself rises only up to about 400 ° C. (wafer temperature is about 500 ° C.). Can be used as a protective film.
  • Comparative Examples 2 and 4 under the same conditions of a film formation temperature of 200 ° C. and a film thickness of 2 respectively, when only the film formation method is different, a high-frequency laser is used as the film formation method.
  • the heat cycle test results of Comparative Example 3 using the plating method were better up to 300 ° C., and the adhesion was found to be one rank higher than Comparative Example 4. Therefore, it was found that it was better to use the high-frequency ion plating method than the vapor deposition method as the film formation method.
  • the reason why the high-frequency ion plating method is good is that, in this method, the excitation of gas molecules is easy and stable due to the action of the high-frequency electric field, and the gas in a high vacuum (about 10 to 4 Torr) is used. It is presumed that the discharge is maintained even at high pressure, and as a result, a dense film with few defects is formed.
  • the deposition temperature of the alumina crystal film is set to a predetermined value for the semiconductor wafer to be processed. It is recommended that the film be formed at a temperature approximately halfway between the temperature to which the transmission window is exposed and room temperature (for example, 25 ° C.). According to this, the thermal expansion coefficients of the S I_ ⁇ 2 is a material of alumina Te operating time and stop odor of the apparatus (A l 2 Rei_3) crystal film and its the underlying transparent plate 34 (see FIG. 2) Can be minimized.
  • the temperature of transparently window when there was Modotsu to room temperature 25 ° C from 350 ° C is a transparent window temperature at the time of process, the amount of shrink about 60mm long, the protective layer (A 1 2 ⁇ 3) and The transparent plate (S i 0 2 ) is as follows.
  • the transmission window is applied to a film forming apparatus using a heating lamp.
  • the present invention is not limited to this, and other processing apparatuses using a corrosive gas,
  • a transmission window for observing the inside of a plasma processing apparatus a plasma transmission window for transmitting light from plasma to detect the etching end point of the plasma etching processing apparatus, and an ultraviolet ray for the deposited film on the surface of the semiconductor wafer in an ozone atmosphere.
  • the present invention can also be applied to, for example, an ultraviolet transmission window of a reforming treatment apparatus that reforms by irradiation.
  • FIG. 5 is a schematic diagram showing an example of a plasma etching processing apparatus as a processing apparatus to which the present invention can be applied.
  • a mounting table 96 is provided in a processing vessel 92 of the plasma etching apparatus 90 which can be evacuated, and a semiconductor wafer W is mounted on an upper surface thereof.
  • the mounting table 96 is, for example, grounded to form a lower electrode.
  • a shower head 98 for introducing a plasma gas such as Ar and a processing gas into the processing vessel 92 which is insulated by an insulating member 100 is provided on a ceiling portion facing the mounting table 96. Is composed.
  • this shower A high-frequency power supply 104 of 13.56 MHz, for example, is connected to the head section 98 via a matching circuit 102 so that a high-frequency voltage is applied between the upper and lower electrodes. .
  • An opening 106 is formed in a part of the side wall of the processing container 92, and a plasma transmission window 110 is formed in the opening 106 as a transmission window through a seal member 108.
  • a photodetector 112 for detecting light from the plasma is provided on the outer side of the photodetector to detect the end point of the etching.
  • This plasma transmission window 110 also has a predetermined protective film 36 formed on the transparent plate 34 as shown in FIG. Even in the case of this apparatus, even if the plasma transmission window 110 is repeatedly exposed to temperature rise and fall, it is possible to prevent the protection film 36 from being cracked or peeled off.
  • FIG. 6 is a schematic view showing an example of an ultraviolet ray reforming apparatus as a processing apparatus.
  • a mounting table 126 is provided in the processing container 122 of the ultraviolet ray reforming apparatus 120 which can be evacuated, and a semiconductor wafer W is mounted on an upper surface thereof.
  • a transparent quartz ring-shaped head portion 128 for introducing ozone or the like therein is provided opposite to the mounting table 126.
  • a large opening 130 is formed in the ceiling of the processing container 122, and an ultraviolet transmission window 134 is airtightly attached to the opening 130 via a sealing member 132 such as an O-ring. Have been.
  • a plurality of ultraviolet lamps 138 housed in the casing 1 36 are arranged outside the ultraviolet transmission window 1 34, and the ultraviolet radiation emitted from the ultraviolet lamp 1 3
  • the surface of the wafer on the mounting table 1 26 is radiated through 1 34 to irradiate it to modify the film on the surface.
  • the ultraviolet transmission window 1 34 is also formed by forming a predetermined protective film 36 on the transparent plate 34 as described with reference to FIG. However, this can be prevented from peeling off.
  • a semiconductor wafer is taken as an example of an object to be processed, but the present invention can be applied to an LCD substrate or a glass substrate as an object to be processed.
  • the method for manufacturing a transmission window of the present invention the following excellent actions and effects can be obtained. Since a protective film made of an alumina crystal film with a thickness of 1.0 m or less is formed at a temperature of 350 ° C or less on the transparent main body of the transmission window of the processing apparatus, the adhesion of the protective film is improved and the protection is improved. Cracking and peeling of the protective film can be prevented, and the durability of the protective film can be improved even when the temperature is repeatedly increased and decreased.
  • the film forming temperature of the protective film to a temperature approximately intermediate between the temperature at which the transmission window is exposed during the process and the room temperature, the generated thermal stress can be greatly suppressed, and the protective film Durability can also be improved.
  • the adhesion of the protective film can be further enhanced.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
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Abstract

L'invention concerne une fenêtre transparente (30) destinée à un appareil de traitement contenant une chambre de traitement (4) sous vide afin de traiter une plaquette de semi-conducteurs (W). La fenêtre (30) comprend une plaque transparente (34) dont la surface est revêtue d'une couche mince protectrice (36) constituée de 1,0 νm ou moins d'alumine cristalline (Al2O3) déposée à une température inférieure à 350 °C. La fenêtre transparente présente ainsi une couche mince protectrice (36) à forte adhésion laquelle est non susceptible de subir une fissuration ou une séparation.
PCT/JP2000/003359 1999-05-31 2000-05-25 Fenetre transparente pour chambre de traitement d'appareil de traitement et son procede de production WO2000074123A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/152794 1999-05-31
JP15279499A JP2000345319A (ja) 1999-05-31 1999-05-31 透過窓の製造方法、透過窓及びこれを用いた処理装置

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WO2000074123A1 true WO2000074123A1 (fr) 2000-12-07

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JP4942880B2 (ja) * 2001-03-14 2012-05-30 東京エレクトロン株式会社 熱処理装置
CN101076614A (zh) * 2004-07-07 2007-11-21 莫门蒂夫性能材料股份有限公司 基底上的保护涂层及其制备方法
CN1324689C (zh) * 2004-10-26 2007-07-04 中芯国际集成电路制造(上海)有限公司 氧化铝原子淀积层的预处理方法
JP2007141895A (ja) * 2005-11-14 2007-06-07 Tokyo Electron Ltd 載置台構造及び成膜装置
KR101046520B1 (ko) * 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
JP5029435B2 (ja) * 2008-03-11 2012-09-19 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP2010041014A (ja) * 2008-08-08 2010-02-18 Tokyo Electron Ltd 誘電体窓の製造方法、誘電体窓、およびプラズマ処理装置
US9404183B2 (en) * 2012-06-08 2016-08-02 Novellus Systems, Inc. Diagnostic and control systems and methods for substrate processing systems using DC self-bias voltage

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JPH0827566A (ja) * 1994-07-14 1996-01-30 Sumitomo Metal Mining Co Ltd 真空装置の覗き窓の製法

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JPS53146717A (en) * 1977-05-27 1978-12-20 Sumitomo Chemical Co Process for prevention aginst devitrification of highhsilica glass
EP0573057A1 (fr) * 1992-06-05 1993-12-08 Applied Materials, Inc. Appareil de traitement de structures de circuits intégrés avec un revêtement protecteur de Al2O3, chimiquement résistant à la corrosion, sur une surface d'une fenêtre de quartz exposée à produits chimiques corrosifs
JPH0827566A (ja) * 1994-07-14 1996-01-30 Sumitomo Metal Mining Co Ltd 真空装置の覗き窓の製法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230112818A (ko) * 2022-01-21 2023-07-28 한국표준과학연구원 플라즈마 진단 장치, 이를 구비하는 플라즈마 공정 시스템 및 공정 방법
KR102682626B1 (ko) * 2022-01-21 2024-07-08 한국표준과학연구원 플라즈마 진단 장치, 이를 구비하는 플라즈마 공정 시스템 및 공정 방법

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