JP4550062B2 - 薄膜を有するプリントヘッド - Google Patents
薄膜を有するプリントヘッド Download PDFInfo
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- JP4550062B2 JP4550062B2 JP2006534345A JP2006534345A JP4550062B2 JP 4550062 B2 JP4550062 B2 JP 4550062B2 JP 2006534345 A JP2006534345 A JP 2006534345A JP 2006534345 A JP2006534345 A JP 2006534345A JP 4550062 B2 JP4550062 B2 JP 4550062B2
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- silicon
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- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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Description
本出願は、2003年10月10日に出願された米国仮出願第60/510,459号(本明細書中に参考として援用される)の利益を主張する。
本発明は、プリントヘッドモジュールおよび膜を形成することに関する。インクジェットプリンタは、代表的に、インク供給源からノズル経路までのインク経路を備える。ノズル経路は、ノズル開口部で終結し、そのノズル開口部からインク滴が駆出される。インク滴の駆出は、インク経路内のインクにアクチュエータで圧力をかけることによって制御され、アクチュエータは、例えば、圧電性のデフレクター、熱インクジェット発生器、または静電気的に偏向された要素であり得る。代表的なプリントヘッドは、インク経路のアレイを有し、このインク経路のアレイは、対応するノズル開口部および付随するアクチュエータを備え、各ノズル開口部からの滴の駆出は、独立して制御され得る。ドロップ・オン・デマンドのプリントヘッドにおいて、各アクチュエータは、プリントヘッドおよび印刷基材が互いに関して動かされるときに、画像の特定のピクセル位置に滴を選択的に駆出するように発射される。高性能のプリントヘッドにおいて、ノズル開口部は、代表的に、50μm以下(例えば、約25μm)の直径を有し、100〜300ノズル/インチのピッチで間隔を空けられ、100〜3000dpi以上の解像度を有し、そして、約1〜70ピコリットル(pl)以下の滴サイズを提供する。滴の駆出頻度は、代表的には、10kHz以上である。
一般に、1つの局面において、本発明は、微細加工されたデバイスを形成する方法を特徴とする。この方法は、基材の上面をエッチング処理して、少なくとも1つのエッチング処理された特徴を形成する工程を包含する。多層基材は、基材の上面に接着され、その結果、上面の上のエッチング処理された特徴が覆われて、チャンバを形成する。多層基材は、シリコン層およびハンドル層を備える。接着は、基材の上面とシリコン層との間にシリコン−シリコン接着を形成する。ハンドル層は、チャンバを覆ってシリコン層を備える膜を形成するために、多層基材から取り除かれる。
(プリントヘッドの構造)
図1を参照して、インクジェットプリントヘッド10は、プリントヘッドユニット76を備え、このプリントヘッドユニット76は、シート14またはシートの一部に跨る様式で、フレーム86の上に保持され、このシートの上で、画像が印刷される。画像は、プリントヘッド10およびシート14が互いに関して(矢印の方向に)動くときに、ユニット76からインクを選択的に駆出することによって印刷され得る。図1の実施形態において、プリントヘッドユニット76の3つのセットが、例えば、約12インチ以上の幅にわたって例示される。各セットは、複数のプリントヘッドユニット(例えば、プリントヘッドとシートとの間の相対的な動きの方向に沿って3つ)を備える。ユニットは、解像度および/または印刷速度を増加するために、ノズル開口部を埋め合わせるように整列され得る。あるいは、もしくはこれに加え、各セットの各ユニットは、異なる型もしくは色のインクを供給され得る。この配置は、プリントヘッドによるシートの1回の通過の間に、シートの幅全体にわたってカラー印刷するために使用され得る。
図3、4Aおよび4Bを具体的に参照して、モジュール基材25は、シリコン基材のようなモノリシックの半導体本体である。シリコン基材を通る通路は、基材を通るインクの流れを規定する。モジュール基材は、シリコンから形成され得る。
図4Aおよび4Bを参照して、個々のアクチュエータ21が形成される、圧電性のアクチュエータ構造体100は、アクチュエータ膜80(これもまた基材25の一部と考えられ得る)、接地電極層(ground electrode layer)110、圧電性層105、および駆動電極層120を備える。圧電性層105は、約50μm以下(例えば、約25μm〜1μm、または約8μm〜約18μm)の厚みを有する圧電性物質の薄いフィルムである。圧電性層105は、高密度、低空隙、かつ高圧電性定数のような、所望の特性を有する、圧電性物質から構成され得る。アクチュエータ膜は、シリコンから形成され得る。
図6A〜6Pを参照して、基材および圧電性アクチュエータを備えるモジュールの製造が例示される。複数のモジュール基材は、1つの基材上に同時に形成され得る。明瞭にするために、図6A〜6Pは、単一のモジュールの単一の流れ経路を例示する。流れ経路特徴は、エッチングプロセスにより形成され得る。
プリントヘッドモジュールは、任意の印刷用途、具体的には、高速かつ高性能の印刷において使用され得る。このモジュールは、特に、幅広の基材が、長いモジュールおよび/またはアレイ状に整列した複数のモジュールによって印刷される、幅広形式の印刷において有用である。
Claims (17)
- 微細加工されたデバイスを形成する方法であって、
該方法は、
基材の上面をエッチング処理して、少なくとも1つのエッチング処理された特徴を形成することであって、該基材は、上面およびシリコン下面を有するシリコン基材である、ことと、
該基材の上面にシリコン・オン・インシュレーター多層基材を接着させることにより、該上面の上のエッチング処理された特徴が覆われて、チャンバを形成することであって、該シリコン・オン・インシュレーター多層基材は、シリコン層およびハンドル層を備え、該接着は、該基材の上面と該シリコンの層との間にシリコン−シリコン接着を形成する、ことと、
該シリコン・オン・インシュレーター多層基材から該ハンドル層を取り除いて、該チャンバを覆って該シリコン層を含む膜を形成することと、
該基材のシリコン下面の上に、シリコン面を有するシリコンのノズル層を融着させることであって、該融着させることは、該基材のシリコン下面と該ノズル層のシリコン面との間に中間層を形成することなく、該基材のシリコン下面と該ノズル層のシリコン面との間にファンデルワールス結合を形成することによって行われる、ことと
を包含する、方法。 - 前記シリコン・オン・インシュレーター多層基材から酸化物の層を取り除くことにより、前記膜を形成することをさらに包含する、請求項1に記載の方法。
- 前記シリコン・オン・インシュレーター多層基材から酸化物の層を取り除くことが、該酸化物の層をエッチング処理することを包含する、請求項2に記載の方法。
- 前記膜上に伝導性の層を形成することをさらに包含する、請求項1に記載の方法。
- 前記膜に圧電性層を接着させることをさらに包含する、請求項1に記載の方法。
- 前記基材の上面にシリコン・オン・インシュレーター多層基材を接着させることが、該上面のシリコンに、該多層基材のシリコンを融着させることを包含する、請求項1に記載の方法。
- 前記上面にシリコン・オン・インシュレーター多層基材を接着させることが、前記膜の層を該上面と接触させることと、次いで、該シリコン・オン・インシュレーター多層基材と該上面とを互いにアニールさせることとを包含する、請求項1に記載の方法。
- 前記シリコン・オン・インシュレーター多層基材からハンドル層を取り除くことが、該ハンドル層を研削することを包含する、請求項1に記載の方法。
- 前記シリコン・オン・インシュレーター多層基材からハンドル層を取り除くことが、該ハンドル層をエッチング処理することを包含する、請求項1に記載の方法。
- 前記膜が、15μm厚未満である、請求項1に記載の方法。
- 前記膜が、10μm厚未満である、請求項10に記載の方法。
- 前記膜が、5μm厚未満である、請求項11に記載の方法。
- 前記ハンドル層が、シリコンを含む、請求項1に記載の方法。
- 前記シリコン・オン・インシュレーター多層基材を接着させる前に、前記シリコン・オン・インシュレーター多層基材の上面から酸化物を取り除くことをさらに包含する、請求項1に記載の方法。
- 前記酸化物を取り除くことが、フッ化水素酸エッチングを包含する、請求項14に記載の方法。
- 微細加工されたデバイスであって、
該デバイスは、
複数の凹部を有する、シリコン面を有するシリコンの本体と、
15μm厚未満のシリコンの膜であって、該膜が該本体に接着されることにより、該本体内の凹部が少なくとも部分的に該膜により覆われ、該膜は、シリコン層およびハンドル層を含むシリコン・オン・インシュレーター多層基材を該本体に接着し、次に、該ハンドル層を取り除いて該シリコン層を含む該膜を形成することによって、該本体に接着されている、膜と、
該膜の上に形成された圧電性構造体であって、該圧電性構造体は、第1の伝導性の層および圧電性物質を備える、圧電性構造体と、
該本体の該膜とは反対側にあるノズル層であって、該ノズル層は、シリコンから形成され、該ノズル層は、シリコン面を有し、該ノズル層と該本体とは、該本体のシリコン面と該ノズル層のシリコン面との間に中間層を形成することなく、該本体のシリコン面と該ノズル層のシリコン面との間にファンデルワールス結合を形成することによって、互いにシリコン−シリコン融着されている、ノズル層と
を備える、デバイス。 - 前記膜が、実質的に開口部を有さない、請求項16に記載のデバイス。
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- 2004-10-07 EP EP04794469.9A patent/EP1680279B1/en active Active
- 2004-10-07 JP JP2006534345A patent/JP4550062B2/ja active Active
- 2004-10-07 CN CNB2004800368982A patent/CN100548692C/zh active Active
- 2004-10-07 EP EP10010055A patent/EP2269826A3/en not_active Withdrawn
- 2004-10-08 US US10/962,378 patent/US7566118B2/en active Active
- 2004-10-08 TW TW093130501A patent/TWI343324B/zh active
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2007
- 2007-04-23 HK HK07104236.9A patent/HK1097229A1/xx unknown
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Also Published As
Publication number | Publication date |
---|---|
CN1890104A (zh) | 2007-01-03 |
JP2007508163A (ja) | 2007-04-05 |
WO2005037558A2 (en) | 2005-04-28 |
US20050099467A1 (en) | 2005-05-12 |
KR20060115386A (ko) | 2006-11-08 |
WO2005037558A8 (en) | 2005-09-09 |
EP1680279A2 (en) | 2006-07-19 |
WO2005037558A3 (en) | 2005-07-21 |
US20090230088A1 (en) | 2009-09-17 |
TW200528293A (en) | 2005-09-01 |
US7566118B2 (en) | 2009-07-28 |
CN100548692C (zh) | 2009-10-14 |
EP1680279B1 (en) | 2014-04-23 |
HK1097229A1 (en) | 2007-06-22 |
KR101137643B1 (ko) | 2012-04-19 |
EP2269826A3 (en) | 2012-09-26 |
EP2269826A2 (en) | 2011-01-05 |
TWI343324B (en) | 2011-06-11 |
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