JP4543457B2 - イオン注入用遮蔽マスクと半導体装置の製造方法 - Google Patents

イオン注入用遮蔽マスクと半導体装置の製造方法 Download PDF

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Publication number
JP4543457B2
JP4543457B2 JP30735299A JP30735299A JP4543457B2 JP 4543457 B2 JP4543457 B2 JP 4543457B2 JP 30735299 A JP30735299 A JP 30735299A JP 30735299 A JP30735299 A JP 30735299A JP 4543457 B2 JP4543457 B2 JP 4543457B2
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Prior art keywords
ion implantation
shielding mask
semiconductor substrate
ion
materials
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JP30735299A
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Japanese (ja)
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JP2001127066A5 (https=
JP2001127066A (ja
Inventor
博樹 脇本
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Fuji Electric Co Ltd
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Fuji Electric Systems Co Ltd
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Publication of JP2001127066A5 publication Critical patent/JP2001127066A5/ja
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JP30735299A 1999-10-28 1999-10-28 イオン注入用遮蔽マスクと半導体装置の製造方法 Expired - Lifetime JP4543457B2 (ja)

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JP30735299A JP4543457B2 (ja) 1999-10-28 1999-10-28 イオン注入用遮蔽マスクと半導体装置の製造方法

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JP30735299A JP4543457B2 (ja) 1999-10-28 1999-10-28 イオン注入用遮蔽マスクと半導体装置の製造方法

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JP2001127066A JP2001127066A (ja) 2001-05-11
JP2001127066A5 JP2001127066A5 (https=) 2004-10-14
JP4543457B2 true JP4543457B2 (ja) 2010-09-15

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JP30735299A Expired - Lifetime JP4543457B2 (ja) 1999-10-28 1999-10-28 イオン注入用遮蔽マスクと半導体装置の製造方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007523440A (ja) * 2004-02-18 2007-08-16 学校法人早稲田大学 イオン注入方法及び装置
JP2005340528A (ja) * 2004-05-27 2005-12-08 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
JP2008172145A (ja) * 2007-01-15 2008-07-24 Toyota Motor Corp ダイオードの製造方法
JP2011044529A (ja) * 2009-08-20 2011-03-03 Mitsubishi Electric Corp 金属製マスク
CN103946985B (zh) * 2011-12-28 2017-06-23 富士电机株式会社 半导体装置及半导体装置的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3554009B2 (ja) * 1994-02-22 2004-08-11 大日本印刷株式会社 微細パターン形成用マスク板およびその製造方法
JPH07297414A (ja) * 1994-04-25 1995-11-10 Toshiba Corp 半導体装置とその製造方法
JP3488599B2 (ja) * 1996-10-17 2004-01-19 株式会社東芝 半導体装置

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