JP4536496B2 - 半導体装置及び半導体装置の駆動方法 - Google Patents

半導体装置及び半導体装置の駆動方法 Download PDF

Info

Publication number
JP4536496B2
JP4536496B2 JP2004345439A JP2004345439A JP4536496B2 JP 4536496 B2 JP4536496 B2 JP 4536496B2 JP 2004345439 A JP2004345439 A JP 2004345439A JP 2004345439 A JP2004345439 A JP 2004345439A JP 4536496 B2 JP4536496 B2 JP 4536496B2
Authority
JP
Japan
Prior art keywords
circuit
antenna
voltage
film
conversion circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004345439A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005204493A (ja
JP2005204493A5 (enExample
Inventor
潤 小山
利彦 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004345439A priority Critical patent/JP4536496B2/ja
Publication of JP2005204493A publication Critical patent/JP2005204493A/ja
Publication of JP2005204493A5 publication Critical patent/JP2005204493A5/ja
Application granted granted Critical
Publication of JP4536496B2 publication Critical patent/JP4536496B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004345439A 2003-12-19 2004-11-30 半導体装置及び半導体装置の駆動方法 Expired - Fee Related JP4536496B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004345439A JP4536496B2 (ja) 2003-12-19 2004-11-30 半導体装置及び半導体装置の駆動方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003423560 2003-12-19
JP2004345439A JP4536496B2 (ja) 2003-12-19 2004-11-30 半導体装置及び半導体装置の駆動方法

Publications (3)

Publication Number Publication Date
JP2005204493A JP2005204493A (ja) 2005-07-28
JP2005204493A5 JP2005204493A5 (enExample) 2008-01-10
JP4536496B2 true JP4536496B2 (ja) 2010-09-01

Family

ID=34829362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004345439A Expired - Fee Related JP4536496B2 (ja) 2003-12-19 2004-11-30 半導体装置及び半導体装置の駆動方法

Country Status (1)

Country Link
JP (1) JP4536496B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9379778B2 (en) 2012-08-07 2016-06-28 Samsung Electronics Co., Ltd. Near field communication circuit and operating method of the same

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5352048B2 (ja) * 2005-08-12 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5105817B2 (ja) * 2005-10-12 2012-12-26 株式会社半導体エネルギー研究所 半導体装置
TWI409934B (zh) * 2005-10-12 2013-09-21 半導體能源研究所股份有限公司 半導體裝置
JP4907292B2 (ja) * 2005-10-14 2012-03-28 株式会社半導体エネルギー研究所 半導体装置及び前記半導体装置を用いた通信システム
EP1952312B1 (en) * 2005-10-14 2012-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and communication system using the semiconductor device
JPWO2008038756A1 (ja) * 2006-09-28 2010-01-28 株式会社ゼンテック・テクノロジー・ジャパン 放送電波受信装置
DE602007013986D1 (de) * 2006-10-18 2011-06-01 Semiconductor Energy Lab ID-Funktransponder
JP5236243B2 (ja) * 2006-10-18 2013-07-17 株式会社半導体エネルギー研究所 Ｒｆタグ
EP1962408B1 (en) 2006-11-16 2015-05-27 Semiconductor Energy Laboratory Co., Ltd. Radio field intensity measurement device, and radio field intensity detector and game console using the same
JP2008161045A (ja) 2006-11-28 2008-07-10 Semiconductor Energy Lab Co Ltd 半導体装置及び当該半導体装置の充電方法、並びに当該半導体装置を用いた通信システム
US8358202B2 (en) * 2006-12-26 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2008218989A (ja) * 2007-02-09 2008-09-18 Semiconductor Energy Lab Co Ltd 半導体装置
US8878393B2 (en) 2008-05-13 2014-11-04 Qualcomm Incorporated Wireless power transfer for vehicles
US20090284369A1 (en) 2008-05-13 2009-11-19 Qualcomm Incorporated Transmit power control for a wireless charging system
WO2010032603A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and wireless tag using the same
US9312924B2 (en) 2009-02-10 2016-04-12 Qualcomm Incorporated Systems and methods relating to multi-dimensional wireless charging
US8854224B2 (en) 2009-02-10 2014-10-07 Qualcomm Incorporated Conveying device information relating to wireless charging
US20100201312A1 (en) 2009-02-10 2010-08-12 Qualcomm Incorporated Wireless power transfer for portable enclosures
JP5485090B2 (ja) * 2010-09-16 2014-05-07 Ｎｅｃトーキン株式会社 非接触充電システム、電子機器、非接触通信回路の保護方法
CN105284056B (zh) * 2013-06-14 2017-09-05 瑞萨电子株式会社 通信控制装置和安装基板
JP6890379B2 (ja) * 2016-02-17 2021-06-18 株式会社Ｆｕｊｉ 非接触給電装置
JP6747078B2 (ja) * 2016-06-14 2020-08-26 オムロン株式会社 非接触給電装置
EP4058106B1 (en) * 2019-11-14 2025-06-25 Sanofi A drug delivery device mitigating dose measurement errors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10187916A (ja) * 1996-12-27 1998-07-21 Rohm Co Ltd 非接触ｉｃカード通信システムにおける応答器
JP3554160B2 (ja) * 1997-11-13 2004-08-18 ローム株式会社 情報通信装置
JP2004213582A (ja) * 2003-01-09 2004-07-29 Mitsubishi Materials Corp Ｒｆｉｄタグ及びリーダ／ライタ並びに該タグを備えたｒｆｉｄシステム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9379778B2 (en) 2012-08-07 2016-06-28 Samsung Electronics Co., Ltd. Near field communication circuit and operating method of the same

Also Published As

Publication number Publication date
JP2005204493A (ja) 2005-07-28

Similar Documents

Publication Publication Date Title
JP4536496B2 (ja) 半導体装置及び半導体装置の駆動方法
KR101098396B1 (ko) 반도체장치 및 반도체장치의 구동방법
JP4916658B2 (ja) 半導体装置
US7494066B2 (en) Semiconductor device
US7946503B2 (en) Semiconductor device
US7465647B2 (en) Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
KR101416876B1 (ko) 반도체 장치 및 반도체 장치의 제조방법
US8240577B2 (en) Semiconductor device
KR101146599B1 (ko) 반도체 장치 및 그를 갖는 제품
JP5487257B2 (ja) 半導体装置の作製方法
JP4718850B2 (ja) 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ及び衣類
JP4963160B2 (ja) 半導体装置
JP4836466B2 (ja) 半導体装置
JP4481632B2 (ja) 薄膜集積回路
JP5110766B2 (ja) 薄膜集積回路装置の作製方法及び非接触型薄膜集積回路装置の作製方法
JP5084177B2 (ja) 半導体装置
JP2007006464A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071115

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100205

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100615

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100616

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130625

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4536496

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130625

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130625

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees