JP4536202B2 - 半導体装置およびその作製方法、並びに電子機器 - Google Patents

半導体装置およびその作製方法、並びに電子機器 Download PDF

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Publication number
JP4536202B2
JP4536202B2 JP2000110445A JP2000110445A JP4536202B2 JP 4536202 B2 JP4536202 B2 JP 4536202B2 JP 2000110445 A JP2000110445 A JP 2000110445A JP 2000110445 A JP2000110445 A JP 2000110445A JP 4536202 B2 JP4536202 B2 JP 4536202B2
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tft
conductive layer
molybdenum
region
tungsten
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JP2000110445A
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Japanese (ja)
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JP2000357799A (ja
JP2000357799A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
潤 小山
徹 高山
敏次 浜谷
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000110445A priority Critical patent/JP4536202B2/ja
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Publication of JP2000357799A5 publication Critical patent/JP2000357799A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000110445A 1999-04-12 2000-04-12 半導体装置およびその作製方法、並びに電子機器 Expired - Lifetime JP4536202B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000110445A JP4536202B2 (ja) 1999-04-12 2000-04-12 半導体装置およびその作製方法、並びに電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-104646 1999-04-12
JP10464699 1999-04-12
JP2000110445A JP4536202B2 (ja) 1999-04-12 2000-04-12 半導体装置およびその作製方法、並びに電子機器

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2006050503A Division JP4527069B2 (ja) 1999-04-12 2006-02-27 表示装置
JP2006050504A Division JP4527070B2 (ja) 1999-04-12 2006-02-27 半導体装置およびその作製方法、並びに電子機器
JP2010116256A Division JP2010219549A (ja) 1999-04-12 2010-05-20 液晶表示装置

Publications (3)

Publication Number Publication Date
JP2000357799A JP2000357799A (ja) 2000-12-26
JP2000357799A5 JP2000357799A5 (enrdf_load_stackoverflow) 2006-04-27
JP4536202B2 true JP4536202B2 (ja) 2010-09-01

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JP2000110445A Expired - Lifetime JP4536202B2 (ja) 1999-04-12 2000-04-12 半導体装置およびその作製方法、並びに電子機器

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JP (1) JP4536202B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW444257B (en) * 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
JP5148032B2 (ja) * 2000-08-09 2013-02-20 株式会社ジャパンディスプレイイースト アクティブマトリクス型表示装置
JPWO2004096449A1 (ja) * 2003-04-25 2006-07-13 株式会社半導体エネルギー研究所 荷電ビームを用いた液滴吐出装置及び該装置を用いてのパターンの作製方法
JP5288234B2 (ja) * 2007-09-07 2013-09-11 セイコーエプソン株式会社 半導体装置、電気光学装置、電子機器、半導体装置の製造方法及び電気光学装置の製造方法
KR101470785B1 (ko) * 2009-09-24 2014-12-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
WO2012042564A1 (ja) 2010-09-29 2012-04-05 パナソニック株式会社 表示装置用薄膜半導体装置、表示装置用薄膜半導体装置の製造方法、ｅｌ表示パネル及びｅｌ表示装置
JP5386643B2 (ja) 2010-09-29 2014-01-15 パナソニック株式会社 表示装置用薄膜半導体装置、表示装置用薄膜半導体装置の製造方法、ｅｌ表示パネル及びｅｌ表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125193A (ja) * 1994-10-20 1996-05-17 Semiconductor Energy Lab Co Ltd 半導体集積回路とその作製方法
JPH1197707A (ja) * 1997-09-24 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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