JP4533416B2 - 露光装置およびデバイス製造方法 - Google Patents

露光装置およびデバイス製造方法 Download PDF

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Publication number
JP4533416B2
JP4533416B2 JP2007248076A JP2007248076A JP4533416B2 JP 4533416 B2 JP4533416 B2 JP 4533416B2 JP 2007248076 A JP2007248076 A JP 2007248076A JP 2007248076 A JP2007248076 A JP 2007248076A JP 4533416 B2 JP4533416 B2 JP 4533416B2
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Prior art keywords
liquid
wafer
optical system
projection optical
nozzle
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JP2007248076A
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Japanese (ja)
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JP2008010893A5 (https=
JP2008010893A (ja
Inventor
一志 中野
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Canon Inc
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Canon Inc
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007248076A 2007-09-25 2007-09-25 露光装置およびデバイス製造方法 Expired - Fee Related JP4533416B2 (ja)

Priority Applications (1)

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JP2007248076A JP4533416B2 (ja) 2007-09-25 2007-09-25 露光装置およびデバイス製造方法

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JP2007248076A JP4533416B2 (ja) 2007-09-25 2007-09-25 露光装置およびデバイス製造方法

Related Parent Applications (1)

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JP2005291809A Division JP4164508B2 (ja) 2005-10-04 2005-10-04 露光装置及びデバイス製造方法

Publications (3)

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JP2008010893A JP2008010893A (ja) 2008-01-17
JP2008010893A5 JP2008010893A5 (https=) 2009-11-19
JP4533416B2 true JP4533416B2 (ja) 2010-09-01

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2005951A (en) * 2010-02-02 2011-08-03 Asml Netherlands Bv Lithographic apparatus and a device manufacturing method.
WO2013100114A1 (ja) * 2011-12-28 2013-07-04 株式会社ニコン 露光装置、露光方法、デバイス製造方法、液体回収方法、プログラム、及び記録媒体
CN113176711B (zh) * 2021-04-25 2024-08-16 上海图双精密装备有限公司 一种浸没式光刻机浸没流场维持装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1571697A4 (en) * 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
CN100370533C (zh) * 2002-12-13 2008-02-20 皇家飞利浦电子股份有限公司 用于照射层的方法和用于将辐射导向层的装置
JP4352930B2 (ja) * 2003-02-26 2009-10-28 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR20110104084A (ko) * 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
KR101431938B1 (ko) * 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
SG141426A1 (en) * 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
JP2004320016A (ja) * 2003-04-11 2004-11-11 Nikon Corp 液浸リソグラフィシステム
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3104396B1 (en) * 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
KR101476087B1 (ko) * 2003-06-19 2014-12-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles

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Publication number Publication date
JP2008010893A (ja) 2008-01-17

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