JP4529646B2 - 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子 - Google Patents

希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子 Download PDF

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JP4529646B2
JP4529646B2 JP2004324641A JP2004324641A JP4529646B2 JP 4529646 B2 JP4529646 B2 JP 4529646B2 JP 2004324641 A JP2004324641 A JP 2004324641A JP 2004324641 A JP2004324641 A JP 2004324641A JP 4529646 B2 JP4529646 B2 JP 4529646B2
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rare earth
earth element
light emitting
light
manufacturing
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JP2006135208A (ja
JP2006135208A5 (enExample
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寿和 安田
暁 大前
統之 風田川
出穂 畑田
克典 簗嶋
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Sony Corp
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Sony Corp
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JP2004324641A 2004-11-09 2004-11-09 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子 Expired - Fee Related JP4529646B2 (ja)

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JP2004324641A JP4529646B2 (ja) 2004-11-09 2004-11-09 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子

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JP2004324641A JP4529646B2 (ja) 2004-11-09 2004-11-09 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子

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JP2006135208A JP2006135208A (ja) 2006-05-25
JP2006135208A5 JP2006135208A5 (enExample) 2007-10-25
JP4529646B2 true JP4529646B2 (ja) 2010-08-25

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201019725D0 (en) 2010-11-22 2011-01-05 Univ Surrey Optoelectronic devices
WO2019049192A1 (ja) * 2017-09-05 2019-03-14 シャープ株式会社 発光デバイス、発光デバイスの製造方法、発光デバイスの製造装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8711373D0 (en) * 1987-05-14 1987-06-17 Secr Defence Electroluminescent silicon device
DE69323884T2 (de) * 1993-10-20 1999-07-22 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung
JP3027092B2 (ja) * 1994-07-27 2000-03-27 シャープ株式会社 多孔質シリコン発光層の形成法
JP3600872B2 (ja) * 1996-04-30 2004-12-15 独立行政法人理化学研究所 希土類元素ドープＳｉ材料およびその製造方法
JPH1117217A (ja) * 1997-06-27 1999-01-22 Res Dev Corp Of Japan 発光素子材料の製造方法
FR2789496B1 (fr) * 1999-02-10 2002-06-07 Commissariat Energie Atomique Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif
JP4410894B2 (ja) * 2000-01-21 2010-02-03 富士通マイクロエレクトロニクス株式会社 半導体装置
JP2002344012A (ja) * 2001-05-17 2002-11-29 Matsushita Electric Ind Co Ltd 多孔性シリコン基板及びそれを用いた発光素子並びに多孔性シリコン基板の製造方法
US7095058B2 (en) * 2003-03-21 2006-08-22 Intel Corporation System and method for an improved light-emitting device
JP4815860B2 (ja) * 2004-11-11 2011-11-16 ソニー株式会社 発光素子及びその製造方法
JP4956916B2 (ja) * 2005-05-30 2012-06-20 ソニー株式会社 発光素子及び発光装置

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